TW201515284A - LED and method for manufacturing the same - Google Patents
LED and method for manufacturing the same Download PDFInfo
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- TW201515284A TW201515284A TW102138348A TW102138348A TW201515284A TW 201515284 A TW201515284 A TW 201515284A TW 102138348 A TW102138348 A TW 102138348A TW 102138348 A TW102138348 A TW 102138348A TW 201515284 A TW201515284 A TW 201515284A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000005538 encapsulation Methods 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims description 45
- 239000008393 encapsulating agent Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 239000003292 glue Substances 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明涉及一種發光二極體（LED）及其製造方法。The present invention relates to a light emitting diode (LED) and a method of fabricating the same.
以發光二極體(Light Emitting Diode, LED)作為光源的燈具比傳統的白熾燈耗能減少九成，既節能又環保。現有技術的LED通常包括一LED晶片及封裝該LED晶片的一封裝層。為改善LED晶片的發光特性，通常會在LED中設置螢光粉。螢光粉可在點封裝膠之前混合在封裝膠材料中，而由於封裝膠材料凝固時懸浮在封裝膠材料中的螢光粉會發生沉積，從而導致固化後的封裝膠中的螢光粉分佈不均勻，從而影響LED最終的出光效果。Light-emitting diodes (LEDs) are used as light sources to reduce energy consumption by 90% compared to conventional incandescent lamps, which is both energy efficient and environmentally friendly. Prior art LEDs typically include an LED wafer and an encapsulation layer that encapsulates the LED wafer. In order to improve the light-emitting characteristics of the LED chip, phosphor powder is usually provided in the LED. The phosphor powder can be mixed in the encapsulant material before the dot encapsulant, and the phosphor powder suspended in the encapsulant material will be deposited due to the encapsulation material solidification, resulting in the distribution of the phosphor powder in the encapsulant after curing. Uneven, which affects the final light output of the LED.
有鑒於此，實有必要提供一種能有效防止螢光粉發生沉積的LED及其製造方法。In view of this, it is necessary to provide an LED which can effectively prevent deposition of phosphor powder and a method of manufacturing the same.
一種發光二極體（LED）的製造方法，包括如下步驟：A method of manufacturing a light emitting diode (LED), comprising the steps of:
步驟一，提供LED晶片及封裝膠，該封裝膠內均勻摻有多個具有磁性的螢光粉顆粒，將封裝膠覆置在LED晶片上以形成包覆該LED晶片的封裝層；Step 1 , providing an LED chip and a package adhesive, wherein the package adhesive is uniformly doped with a plurality of magnetic phosphor particles, and the encapsulant is coated on the LED chip to form an encapsulation layer covering the LED chip;
步驟二，提供至少一磁體，在覆置在LED晶片上的封裝膠固化前，將該至少一磁體對應置於靠近該封裝膠外部，使所述多個具有磁性的螢光粉顆粒被磁體藉由磁力作用下吸到該封裝膠內預定的位置，再固化所述封裝膠，從而螢光粉顆粒集中分佈在封裝膠內該預定的位置形成一螢光粉層。Step 2, providing at least one magnet, corresponding to placing the at least one magnet adjacent to the outside of the encapsulant before the encapsulation coated on the LED chip is cured, so that the plurality of magnetic phosphor particles are borrowed by the magnet The resin is attracted to a predetermined position in the encapsulant, and the encapsulant is cured, so that the phosphor particles are concentratedly distributed in the predetermined position in the encapsulant to form a phosphor layer.
一種由上述製造方法所製造的發光二極體，包括一LED晶片、封裝該LED晶片的一封裝層及設置在該封裝層內的多個螢光粉顆粒，所述螢光粉顆粒具有磁性，這些具有磁性的螢光粉顆粒在該封裝層內集中分佈形成一螢光粉層。A light emitting diode manufactured by the above manufacturing method, comprising an LED chip, an encapsulation layer encapsulating the LED chip, and a plurality of phosphor powder particles disposed in the encapsulation layer, the phosphor powder particles having magnetic properties, These magnetic phosphor particles are concentratedly distributed in the encapsulation layer to form a phosphor layer.
在本發明的LED中，藉由磁場控制螢光粉顆粒的分佈，使螢光粉顆粒根據需要集中在封裝層的不同位置，防止螢光粉顆粒在封裝膠固化前沉積在封裝膠底部，保證LED具有較佳的出光效果。In the LED of the present invention, the distribution of the phosphor powder particles is controlled by the magnetic field, so that the phosphor powder particles are concentrated at different positions of the encapsulation layer as needed to prevent the phosphor powder particles from being deposited on the bottom of the encapsulant before the encapsulant is cured, thereby ensuring LEDs have a better light-emitting effect.
圖1是本發明第一實施例的LED的示意圖。1 is a schematic view of an LED of a first embodiment of the present invention.
圖2是圖1中一螢光粉顆粒的結構示意圖。2 is a schematic view showing the structure of a phosphor powder particle of FIG. 1.
圖3及圖4為圖1所示的LED的製造方法的示意圖。3 and 4 are schematic views of a method of manufacturing the LED shown in Fig. 1.
圖5是本發明第二實施例的LED的示意圖。Figure 5 is a schematic illustration of an LED of a second embodiment of the present invention.
圖6為圖5所示的LED的製造方法的示意圖。Fig. 6 is a schematic view showing a method of manufacturing the LED shown in Fig. 5.
圖7是本發明第三實施例的LED的示意圖。Fig. 7 is a schematic view of an LED of a third embodiment of the present invention.
圖8為圖7所示的LED的製造方法的示意圖。Fig. 8 is a schematic view showing a method of manufacturing the LED shown in Fig. 7.
如圖1所示，為本發明第一實施例的LED 100，其包括一LED晶片10、封裝該LED晶片10的一封裝層20及設置在該封裝層20內的多個螢光粉顆粒30。該多個螢光粉顆粒30具有磁性，在磁場的作用下，該多個具有磁性的螢光粉顆粒30在該封裝層20內集中分佈形成一螢光粉層。As shown in FIG. 1 , an LED 100 according to a first embodiment of the present invention includes an LED chip 10 , an encapsulation layer 20 encapsulating the LED chip 10 , and a plurality of phosphor particles 30 disposed in the encapsulation layer 20 . . The plurality of phosphor particles 30 have magnetic properties, and the plurality of magnetic phosphor particles 30 are concentratedly distributed in the encapsulation layer 20 to form a phosphor layer under the action of a magnetic field.
請同時參照圖2，該LED晶片10位於該封裝層20底部，該封裝層20的頂面22作為該LED 100的出光面。該封裝層20由矽膠（silicone）或環氧樹脂（epoxy resin）製成。每個螢光粉顆粒30呈球形，包括一帶磁核心32以及包覆該帶磁核心32的一螢光層外殼34。該帶磁核心32的材質為四氧化三鐵（Fe3O4）。該螢光層外殼34的材料可以為石榴石(garnet)結構的化合物。在本實施例中，該多個螢光粉顆粒30集中分佈在該封裝層20的底部。Referring to FIG. 2 simultaneously, the LED chip 10 is located at the bottom of the encapsulation layer 20, and the top surface 22 of the encapsulation layer 20 serves as a light-emitting surface of the LED 100. The encapsulation layer 20 is made of silicone or epoxy resin. Each of the phosphor particles 30 is spherical and includes a magnetic core 32 and a phosphor layer outer casing 34 covering the magnetic core 32. The material of the magnetic core 32 is ferroferric oxide (Fe3O4). The material of the phosphor layer outer shell 34 may be a compound of a garnet structure. In the embodiment, the plurality of phosphor particles 30 are concentratedly distributed at the bottom of the encapsulation layer 20.
圖3及圖4為圖1所示的LED 100的製造方法的示意圖。該LED 100的製造方法包括如下步驟：3 and 4 are schematic views of a method of manufacturing the LED 100 shown in Fig. 1. The manufacturing method of the LED 100 includes the following steps:
步驟一，提供LED晶片10及封裝膠，該封裝膠內均勻摻有多個具有磁性的螢光粉顆粒30，將封裝膠點在該LED晶片10上以形成包覆該LED晶片10的封裝層20；In the first step, the LED chip 10 and the encapsulant are provided. The encapsulant is uniformly doped with a plurality of magnetic phosphor particles 30, and the encapsulant is spotted on the LED chip 10 to form an encapsulation layer covering the LED chip 10. 20;
步驟二，提供一磁體40，在封裝膠固化前，將該磁體40置於該封裝膠底部，使該多個具有磁性的螢光粉顆粒30被該磁體40吸到封裝膠底部，從而螢光粉顆粒30集中分佈在封裝膠底部形成一螢光粉層。In the second step, a magnet 40 is provided. Before the encapsulant is cured, the magnet 40 is placed on the bottom of the encapsulant, so that the plurality of magnetic phosphor particles 30 are attracted to the bottom of the encapsulant by the magnet 40, thereby fluorescing. The powder particles 30 are concentratedly distributed on the bottom of the encapsulant to form a phosphor layer.
如圖5所示，為本發明第二實施例的LED 100a，其包括一LED晶片10、封裝該LED晶片10的一封裝層20及設置在該封裝層20內的多個螢光粉顆粒30。該多個螢光粉顆粒30具有磁性，在磁場的作用下，該多個具有磁性的螢光粉顆粒30在該封裝層20內集中分佈形成一螢光粉層。As shown in FIG. 5, an LED 100a according to a second embodiment of the present invention includes an LED chip 10, an encapsulation layer 20 encapsulating the LED chip 10, and a plurality of phosphor particles 30 disposed in the encapsulation layer 20. . The plurality of phosphor particles 30 have magnetic properties, and the plurality of magnetic phosphor particles 30 are concentratedly distributed in the encapsulation layer 20 to form a phosphor layer under the action of a magnetic field.
第二實施例的LED 100a與第一實施例的LED 100的區別僅在於：在第二實施例中，該多個螢光粉顆粒30集中分佈在該封裝層20的頂部且靠近LED 100a的出光面。The LED 100a of the second embodiment is different from the LED 100 of the first embodiment only in that, in the second embodiment, the plurality of phosphor particles 30 are concentratedly distributed on the top of the encapsulation layer 20 and close to the LED 100a. surface.
圖6為圖5所示的LED 100a的製造方法的示意圖。該LED 100a的製造方法與第一實施例中LED 100的製造方法的區別在於步驟二，該LED 100a的製造方法的步驟二為：FIG. 6 is a schematic view showing a method of manufacturing the LED 100a shown in FIG. 5. The manufacturing method of the LED 100a is different from the manufacturing method of the LED 100 in the first embodiment in the second step. The second step of the manufacturing method of the LED 100a is as follows:
步驟二，提供一磁體40，在封裝膠固化前，將該磁體40置於該封裝膠頂部，使該多個具有磁性的螢光粉顆粒30被該磁體40吸到封裝膠頂部，從而螢光粉顆粒30集中分佈在封裝膠頂部形成一螢光粉層。Step 2, providing a magnet 40, the magnet 40 is placed on top of the encapsulant before the encapsulant is cured, so that the plurality of magnetic phosphor particles 30 are attracted to the top of the encapsulant by the magnet 40, thereby fluorescing The powder particles 30 are concentratedly distributed on the top of the encapsulant to form a phosphor layer.
如圖7所示，為本發明第三實施例的LED 100b，其包括一LED晶片10、封裝該LED晶片10的一封裝層20及設置在該封裝層20內的多個螢光粉顆粒30。該多個螢光粉顆粒30具有磁性，在磁場的作用下，該多個具有磁性的螢光粉顆粒30在該封裝層20內集中分佈形成一螢光粉層。As shown in FIG. 7, an LED 100b according to a third embodiment of the present invention includes an LED chip 10, an encapsulation layer 20 encapsulating the LED chip 10, and a plurality of phosphor particles 30 disposed in the encapsulation layer 20. . The plurality of phosphor particles 30 have magnetic properties, and the plurality of magnetic phosphor particles 30 are concentratedly distributed in the encapsulation layer 20 to form a phosphor layer under the action of a magnetic field.
第三實施例的LED 100b與第一實施例的LED 100的區別僅在於：在第三實施例中，該多個螢光粉顆粒30集中分佈在該封裝層20中間。The LED 100b of the third embodiment is different from the LED 100 of the first embodiment only in that, in the third embodiment, the plurality of phosphor particles 30 are collectively distributed in the middle of the encapsulation layer 20.
圖8為圖7所示的LED 100b的製造方法的示意圖。該LED 100b的製造方法與第一實施例中LED 100的製造方法的區別在於步驟二，該LED 100b的製造方法的步驟二為：FIG. 8 is a schematic view showing a method of manufacturing the LED 100b shown in FIG. The manufacturing method of the LED 100b is different from the manufacturing method of the LED 100 in the first embodiment in the second step. The second step of the manufacturing method of the LED 100b is:
步驟二，提供二磁體40，該二磁體40具有相同的磁力，在封裝膠固化前，將該二磁體40分別置於該封裝膠的頂部和底部，使該多個具有磁性的螢光粉顆粒30被該磁體40吸到封裝膠中間，從而螢光粉顆粒30集中分佈在封裝膠中間形成一螢光粉層。In the second step, two magnets 40 are provided. The two magnets 40 have the same magnetic force. Before the encapsulant is cured, the two magnets 40 are respectively placed on the top and bottom of the encapsulant to make the plurality of magnetic phosphor particles. The magnet 40 is sucked into the middle of the encapsulant by the magnet 40, so that the phosphor powder particles 30 are concentratedly distributed in the middle of the encapsulant to form a phosphor layer.
在本發明的LED中，藉由磁場控制螢光粉顆粒30的分佈，使螢光粉顆粒30根據需要集中在封裝層20的不同位置，防止螢光粉顆粒30在封裝膠固化前沉積在封裝膠底部，保證LED具有較佳的出光效果。In the LED of the present invention, the distribution of the phosphor particles 30 is controlled by the magnetic field, so that the phosphor particles 30 are concentrated at different positions of the encapsulating layer 20 as needed to prevent the phosphor particles 30 from being deposited in the package before the encapsulant is cured. The bottom of the glue ensures that the LED has a better light-emitting effect.
可以理解的是，對於本領域的普通技術人員來說，可以根據本發明的技術構思做出其他各種相應的改變與變形，而所有這些改變與變形都應屬於本發明權利要求的保護範圍。It is to be understood that those skilled in the art can make various other changes and modifications in accordance with the technical concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
100、100a、100b‧‧‧LED100, 100a, 100b‧‧‧LED
10‧‧‧LED晶片10‧‧‧LED chip
20‧‧‧封裝層20‧‧‧Encapsulation layer
22‧‧‧頂面22‧‧‧ top surface
30‧‧‧螢光粉顆粒30‧‧‧Flame powder particles
32‧‧‧帶磁核心32‧‧‧With magnetic core
34‧‧‧螢光層外殼34‧‧‧Fluorescent shell
40‧‧‧磁體40‧‧‧ magnet
無no
100‧‧‧LED 100‧‧‧LED
10‧‧‧LED晶片 10‧‧‧LED chip
20‧‧‧封裝層 20‧‧‧Encapsulation layer
22‧‧‧頂面 22‧‧‧ top surface
30‧‧‧螢光粉顆粒 30‧‧‧Flame powder particles
Claims (9)
步驟一，提供LED晶片及封裝膠，該封裝膠內均勻摻有多個具有磁性的螢光粉顆粒，將封裝膠覆置在LED晶片上以形成包覆該LED晶片的封裝層；
步驟二，提供至少一磁體，在覆置在LED晶片上的封裝膠固化前，將該至少一磁體對應置於靠近該封裝膠外部，使所述多個具有磁性的螢光粉顆粒被磁體藉由磁力作用下吸到該封裝膠內預定的位置，再固化所述封裝膠，從而螢光粉顆粒集中分佈在封裝膠內該預定的位置形成一螢光粉層。A method for manufacturing a light-emitting diode includes the following steps:
Step 1 , providing an LED chip and a package adhesive, wherein the package adhesive is uniformly doped with a plurality of magnetic phosphor particles, and the encapsulant is coated on the LED chip to form an encapsulation layer covering the LED chip;
Step 2, providing at least one magnet, corresponding to placing the at least one magnet adjacent to the outside of the encapsulant before the encapsulation coated on the LED chip is cured, so that the plurality of magnetic phosphor particles are borrowed by the magnet The resin is attracted to a predetermined position in the encapsulant, and the encapsulant is cured, so that the phosphor particles are concentratedly distributed in the predetermined position in the encapsulant to form a phosphor layer.
The light-emitting diode according to claim 2, wherein the encapsulating layer is made of silicone or epoxy resin.
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|---|---|---|---|
| CN201310383354.4A CN104425678A (en) | 2013-08-29 | 2013-08-29 | Light emitting diode and manufacturing method thereof |
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| TW201515284A true TW201515284A (en) | 2015-04-16 |
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| CN107910426B (en) * | 2017-11-14 | 2020-01-03 | 广东金源照明科技股份有限公司 | Magnetic fluorescent powder composite material and plane coating method thereof |
| CN108493318A (en) * | 2018-02-01 | 2018-09-04 | 广州硅能照明有限公司 | A kind of magnetic-particle and its LED component of making |
| CN108417696A (en) * | 2018-02-01 | 2018-08-17 | 广州硅能照明有限公司 | A kind of fluorescent powder painting method |
| CN109659298A (en) * | 2018-12-21 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of heavy powder magnetism light source and its technique |
| CN110797449A (en) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | LED package and packaging method thereof |
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| KR20110108753A (en) * | 2010-03-29 | 2011-10-06 | 서울반도체 주식회사 | Phosphor blends and light emitting diode package having the phosphor blends and method for fabricating the same |
| CN102468405A (en) * | 2010-11-18 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure and manufacturing method thereof |
| KR101290507B1 (en) * | 2012-06-04 | 2013-07-26 | 한국광기술원 | Method for fabricating light emitting diode package comprising magnetic phosphor and light emitting diode fabricated thereby |
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- 2013-08-29 CN CN201310383354.4A patent/CN104425678A/en active Pending
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