CN104425620A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN104425620A
CN104425620A CN201410443424.5A CN201410443424A CN104425620A CN 104425620 A CN104425620 A CN 104425620A CN 201410443424 A CN201410443424 A CN 201410443424A CN 104425620 A CN104425620 A CN 104425620A
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layer
compound semiconductor
semiconductor device
oxygen desorption
semiconductor layer
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CN104425620B (zh
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李东洙
李明宰
赵成豪
穆罕默德·拉基布·乌丁
大卫·徐
梁炆承
李商文
李成训
许智贤
黄义澈
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Abstract

本发明公开涉及一种半导体器件及其制造方法，所述半导体器件包括处于第Ⅲ-Ⅵ主族化合物半导体层与电介质层之间的氧吸附层。所述半导体器件可包括化合物半导体层、布置在化合物半导体层上的电介质层以及插入在化合物半导体层与电介质层之间的氧吸附层。氧吸附层包含与化合物半导体的材料相比对氧有更高亲和性的材料。

Description

半导体器件及其制造方法
相关申请的交叉引用
本申请要求2013年9月3日在韩国知识产权局提交的韩国专利申请No.10-2013-0105691的优先权，所述申请的全部内容通过引用的方式并入本文。
技术领域
本发明涉及半导体器件及其制作方法，更具体地，涉及在第Ⅲ-Ⅵ主族化合物半导体层与电介质层之间包含氧吸附层的半导体器件，以及制造该半导体器件的方法。
背景技术
通过结合至少两类元素来形成化合物半导体，因此化合物半导体具有半导体特性。例如，GaAs化合物半导体所使用的Ga和As分别是来自元素周期表的第Ⅲ主族和第Ⅴ主族的元素。采用诸如GaAs之类的化合物半导体制成的半导体器件所具有的电子迁移率比采用硅制成的半导体器件的电子迁移率至少高5倍，因此能够高速工作。另外，采用化合物半导体制成的半导体器件可以在高温下稳定工作，因此可以在高功率设备中使用。还有，采用化合物半导体制成的半导体器件能够在高频带工作，因此可以用于毫米波或微米波设备，或者用于光电装置。还有，化合物半导体可以发射红外线至可见光范围内的光，因此可以广泛应用于产生各种颜色光的发光二极管(LED)或半导体激光器。化合物半导体还有低功耗的特性。
可以根据在第Ⅲ-Ⅴ主族化合物半导体中所结合的材料的类型和组成来制作具有多种特性的半导体。但是，与硅半导体相比，第Ⅲ-Ⅴ主族化合物半导体更易被氧化。所以，当第Ⅲ-Ⅴ主族化合物半导体表面形成氧化物层时，该第Ⅲ-Ⅴ主族化合物半导体的表面就被氧化了，导致表面粗糙度增加，并可能出现物理缺陷和电气缺陷。
发明内容
其他的方面将在接下来的描述中部分阐述，以及在某种程度上在描述中显而易见，或者可通过实践非限制性的实施例了解。
根据示例性实施例，一种半导体器件可能包括：化合物半导体层，其包含第Ⅲ到第Ⅵ主族中的至少一种元素；电介质层，其布置在化合物半导体层上；氧吸附层，其插入在化合物半导体层与电介质层之间，所述氧吸附层包含与所述化合物半导体层的材料相比对氧有更高亲和性的材料。
氧吸附层可以包含过渡金属、掺杂Zr、镧系金属、硫化物和氮化物中的至少一种。
过渡金属可以包含Ti、Sc和Y中的至少一种。
掺杂Zr可以包含Y掺杂Zr和Al掺杂Zr中的至少一种。
硫化物可以包括HfS2、TiS2、LaSx和SiS2中的至少一种。
氮化物可以包括AlN、GaN、HfN和SiN中的至少一种。
氧吸附层的厚度可以等于或小于大约10nm。
电介质层可以包括HfO2、Al2O3、La2O3、ZrO2、HfSiO、HfSiON、HfLaO、LaAlO和SrTiO中的至少一种。
半导体器件还可以包括插入在化合物半导体层和氧吸附层之间的钝化层。
钝化层可以包括形成在化合物半导体层表面上的S、N、F、Cl和H中的至少一种。
根据另一个示例性实施例，一种制造半导体器件的方法可以包括步骤：在化合物半导体层上形成氧吸附层，所述化合物半导体层包括第Ⅲ到第Ⅵ主族中的至少一种元素，其中氧吸附层包含与所述化合物半导体层的材料相比对氧有更高亲和性的材料；以及在氧吸附层上形成电介质层。
氧吸附层可以通过使用原子层沉积(ALD)方法、化学气相沉积(CVD)方法或溅射法形成。
在形成氧吸附层的操作或形成电介质层的操作之后，所述制造方法还可以包括进行热处理的步骤。
在化合物半导体层上形成氧吸附层的操作之前，所述制造方法还可以包括在化合物半导体层的表面上形成钝化层的步骤。
钝化层可以包括形成在化合物半导体层表面上的S、N、F、Cl和H中的至少一种。
根据另一个示例性实施例，一种半导体器件可以包括化合物半导体层、位于化合物半导体层上的氧吸附层和位于氧吸附层上的电介质层。化合物半导体层包括来自元素周期表至少两个不同族中的元素。至少一个所述元素来自第Ⅲ到第Ⅵ主族。氧吸附层包含与所述化合物半导体层中的任意材料相比对氧有更高亲和性的材料。
附图说明
下列描述结合附图将使上述和/或其他方面的描述变得清晰和易于理解：
图1是根据示例性实施例示出了化合物半导体器件结构的剖视图；
图2A和2B是示出了插入在化合物半导体层与电介质层之间的氧吸附层的功能的剖视图；
图3是只示意性示出了根据另一个示例性实施例的化合物半导体器件中化合物半导体层与电介质层之间的交界面的剖视图；
图4是只示意性示出了根据另一个示例性实施例的化合物半导体器件中化合物半导体层与电介质层之间的交界面的剖视图；以及
图5是只示意性示出了根据另一个示例性实施例的化合物半导体器件中化合物半导体层与电介质层之间的交界面的剖视图。
具体实施方式
需要注意的是，当一个元件或层被称为“在……上”“连接到”“耦合到”或“覆盖”另一元件或层时，可以是指直接在……上、直接连接到、直接耦合到或直接覆盖该另一元件或层，或者也可以存在中间元件或层。与之相反，当一个元件被称为“直接在……上”“直接连接到”“直接耦合到”另一元件或层，则不存在中间元件或层。本文所采用的术语“和/或”包括一个或多个相关所列项的任意及所有组合。
需要注意的是，尽管术语“第一”、“第二”、“第三”等可能在本文用于描述多个元件、组件、区域、层和/或部分，但是这些元件、组件、区域、层和/或部分不应被这些术语限制。这些术语仅用来将一个元件、组件、区域、层或部分与另一个元件、组件、区域、层或部分区分开来。所以，以下所讨论的第一元件、第一组件、第一区域或第一部分在没有脱离示例性实施例的指教的情况下也可以被描述为第二元件、第二组件、第二区域、第二层或第二部分。
会在本文中使用诸如“在……的下方”“在……下面”“下方的”“在……的上方”“上方的”等空间相对术语，以便于描述一个元件或特征相对另一个(或多个)元件或特征在附图中所示的关系。需要注意的是，空间相对术语旨在涵盖使用或操作中的器件在附图所示的指向之外的不同指向。例如，如果附图中的器件被翻转了，那么描述为在另一元件或特征“下面”或“下方”的元件将会被定位为在另一元件或特征的“上方”。因此，术语“在……下面”可涵盖在上方和在下方的指向。器件也可以有其它的定位(旋转90度或其它指向)，并且应当相应地解释本文所使用的空间相关的术语。
本文用到的术语只出于描述各个实施例的目的，而不作为对示例性实施例的限制。如本文用到的，单数形式“一”、“一个”和“该”将也包括复数形式，除非上下文明确表明不是这样。还需要注意的是，如果在本文使用了术语“包括”“包含”等，其表示所述特征、整体、步骤、操作、元件和/或组件的存在，但不排除存在或添加一个或多个其他的特征、整体、步骤、操作、元件、组件和/或它们的组。
将参照剖视图在本文描述示例性实施例，这些剖视图是示例性实施例中理想实施例(和中间结构)的示意图。因此，由于某些原因，比如制造技术和/或容差，导致与示意图形状不同是完全正常的。所以，示例性实施例不应该被解释为是对本文所示区域形状的限制，而应该包括诸如制造等原因造成的形状偏差。
除非另外规定，否则本文用到的所有术语(包括技术和科学术语)与本领域普通技术人员的理解具有相同的意思。还需要注意的是，这些术语，包括那些在常用词典中定义的术语，应该理解为具有与相关领域上下文相一致的含义，而不应以理想化或过于正式的意义去理解，除非本文明确地进行了限定。
现在将详细描述半导体器件及其制造方法的示例性实施例。在附图中，为了清楚起见可能将每个组件的尺寸放大。在这点上，应该注意到这些示例可能有不同的形式，不应解读为局限于本文提及的描述。当在元件列表之前有诸如“至少一个”之类的表述时，其修饰整个元件列表而非局限于一个特定的元件。
图1是根据示例性实施例示出了化合物半导体器件10的结构的剖视图。参照图1，化合物半导体器件10可包括化合物半导体层11、置于化合物半导体层11上面的电介质层13以及插入在化合物半导体层11和电介质层13之间的氧吸附层12。另外，化合物半导体器件10还可包括源极区域15和漏极区域16，通过在电介质层13两侧的化合物半导体层11的顶部进行掺杂而形成所述区域15和16，化合物半导体器件10还包括置于电介质层13之上的电极14。电极14可以是栅电极。
如图1所示的化合物半导体器件10可以在金属氧化物半导体场效应晶体管(MOSFET)中使用。但是，MOSFET只是化合物半导体器件10的一个示例。所以，应该注意的是本实施例不局限于MOSFET。例如，根据本实施例的化合物半导体器件10可以应用于多种晶体管、电容、发光器件、光电传感器、调制器、太阳能电池、集成电路等，其中电介质层13和化合物半导体层11可以形成交界面。另外，参照图1，电极14处于电介质层13上面，但是本实施例可不局限于此。所以，根据化合物半导体器件10的类型和结构，电介质层13上面可以不是电极14而是其他层。
化合物半导体层11可以包含第Ⅲ主族的Ga和In，第Ⅴ主族的As和P，或者第Ⅵ主族的氧族化物。例如，化合物半导体层11可以包含GaN、GaAs、InGaAs、InP等。电介质层13可以包含SiO2,但是为了保证充分的静电容量和厚度，电介质层13可以由高k电介质材料形成。例如，电介质层13可以形成为包含诸如HfO2、Al2O3、La2O3、ZrO2、HfSiO、HfSiON、HfLaO、LaAlO、SrTiO等之类的高k电介质材料的金属氧化物电介质层。
置于电介质层13上的电极14可包含诸如铂(Pt)的金属。可通过在电介质层13两侧的化合物半导体层11顶部进行掺杂而形成源极区域15和漏极区域16。例如，当化合物半导体层11是掺杂n型，则源极区域15和漏极区域16可以是掺杂p型。相反地，当化合物半导体11是掺杂p型，则源极区域15和漏极区域16可以是掺杂n型。
但是，因为化合物半导体层11具有相对较低的热稳定性且易被氧化，所以当电介质层13和化合物半导体层11直接形成交界面时，该交界面的特性会劣化。换句话说，当把电介质层13形成在化合物半导体层11上面时，化合物半导体层11的表面会被氧化，在后续工艺中，化合物半导体层11的某一元素会由于暴露于高温而扩散到电介质层13中。例如，当化合物半导体层11包含GaAs时，化合物半导体层11表面的GaAs可能会与氧发生反应生成Ga2O3，而As元素会被分离。分离出的As元素可能会在高温工序中扩散到电介质层13，这样就会劣化电介质层13的介电特性。因为这个原因，在化合物半导体层11与电介质层13之间的交界面会出现晶体缺陷，并会出现电流泄漏和电子迁移性的劣化。
根据本实施例，为了防止化合物半导体层11和电介质层13两者之间直接形成交界面，可以在化合物半导体层11与电介质层13之间插入氧吸附层12。氧吸附层12通过吸收化合物半导体层11与电介质层13之间分界面中的氧而自行氧化，从而使得氧吸附层12可以充当防止电介质层13氧扩散的氧扩散防护层，并可同时充当抑制化合物半导体层11氧化的氧化防护层。
氧吸附层12可由氧化后具有令人满意的界面特性并且具有致密的层特性的材料形成。因此，氧化后的氧吸附层12可以防止氧渗入化合物半导体层11并防止化合物半导体层11与电介质层13之间的元素相互扩散。另外，氧吸附层12也可由氧化后仍具有相对较高电介质常数的材料形成，从而使得氧吸附层12不影响电介质层13的高k介电特性。所以，氧吸附层12可以被当作电介质层。也就是说，电介质层13可以被看作为包括被氧化的氧吸附层12和高k电介质材料的双层结构。
图2A和图2B示出了处于化合物半导体层11与电介质层13之间的氧吸附层12的功能的剖视图。参照图2A，由于化合物半导体的一部分被氧化而生成的多段交界面氧化物11a可能处于化合物半导体层11的上表面。例如，交界面氧化物11a可以是Ga2O3。氧吸附层12具有相对较高的氧亲和性。在一个非限制性实施例中，氧吸附层12包含与化合物半导体层11和/或电介质层13的任何材料相比对氧有更高亲和性材料。所以，如图2B所示，氧吸附层12可以通过吸收来自化合物半导体层11和电介质层13的氧来自行氧化。然后，交界面氧化物11a可以脱氧而再次成为化合物半导体的部分。例如，Ga2O3可脱氧成为GaAs。因此，交界面氧化物11a和化合物半导体层11与电介质层13之间的残余氧可以被除去。
氧吸附层12可以由包含如下物质的材料形成：过渡金属比如Ti、Sc、Y等，掺杂金属例如Y掺杂Zr、Al掺杂Zr等，氧化后具有高电介质常数的镧系金属，硫化物例如HfS2、TiS2、LaSx、SiS2等，或者氮化物例如AlN、GaN、HfN、SiN等。掺杂金属可以通过将氧化后具有高电介质常数的金属掺入易被氧化的金属中来获得。在这里，用于氧吸附层12的金属组成和氧吸附层12的厚度可以根据随后处理的条件(例如，热处理的条件)、化合物半导体层11的材料、组成和晶体表面状态、电介质层13的材料和组成等而有所不同。当氧吸附层12被氧化后，氧吸附层12会拥有电介质功能，因此氧吸附层12的厚度可以等于或小于大约10nm，从而减少其对电介质层13特性的影响。氧吸附层12可以通过使用诸如原子层沉积(ALD)方法、化学气相沉积(CVD)方法或溅射法等多种方法形成。另外，为了加快氧吸附层12的氧化，可以在沉积氧吸附层12之后或者在沉积电介质层之后进行热处理工序。
图3是只示意性示出了根据另一个示例性实施例的化合物半导体器件10中化合物半导体层11与电介质层13之间交界面的剖视图。参照图3，钝化层18、氧吸附层12、电介质层13和电极4按顺序依次堆叠于化合物半导体层11之上。与图1相比，图3中的化合物半导体器件10还包括钝化层18，其处在化合物半导体层11和氧吸附层12之间。
钝化层18可以通过用诸如S、N、F、Cl、H之类的元素替换化合物半导体层11表面上的第Ⅲ、第V或第Ⅵ主族元素的方式来形成。也就是说，钝化层18可以是在化合物半导体层11表面上薄薄地涂敷上S、N、F、Cl、H之类材料的一层。钝化层18可增加吉布斯自由能量，并因此抑制化合物半导体层11表面在有氧环境中被氧化。通过使用钝化层18和氧吸附层12，将有可能抑制化合物半导体层11的氧化，以及元素在化合物半导体层11与电介质层13之间相互扩散。
如上所述，氧吸附层12可以除去化合物半导体层11与电介质层13之间的交界面上的氧，因此氧吸附层12可以充当用于防止电介质层13氧扩散的氧扩散防护层，也可同时充当用于抑制化合物半导体层11被氧化的氧化防护层。一般来说，氧吸附层12还具有有益的交界面特性、相对较高的电介质常数和致密的层特性，因此氧吸附层12可以改善化合物半导体层11的交界面特性。所以，氧吸附层12可以改善化合物半导体器件10的电气特性。
例如，小亚阈值摆幅(SS)在场效应晶体管(FET)中可用，因此可实现高Ion/Ioff比。也可以减少或者避免MOS电容器聚集区的电容特性的劣化。另外，也可减少或避免交界面处载流子迁移率的劣化，从而可以提高驱动速度，并可降低关闭漏电流，从而减少能耗。
在图1至图3中，化合物半导体层11、氧吸附层12和电介质层13均被示为平面。但是，之前提及的实施例可用于任何形状。图4和图5示出了之前提到实施例被应用于鳍式场效应晶体管(FinFET)来提高每单位面积沟道可控性的例子。图4和图5都是根据示例性实施例只示意性示出了化合物半导体层21与电介质层23之间交界面的剖视图。
首先，参照图4，化合物半导体层21包括沟道区域25作为垂直突出的中心部分。然后，氧吸附层22和电介质层23可被形成来包围包括沟道区域25在内的化合物半导体21的外表面，并且在电介质层23的表面上可形成电极24。除了横截面的形状，化合物半导体层21、氧吸附层22和电介质层23相关的材料和功能都和以上参照图1说明的内容一样。另外，如图5所示，由S、N、F、Cl、H之类形成的钝化层28也可插入在化合物半导体层21和氧吸附层22之间。
根据多个实施例并参照附图在上文描述了半导体器件及其制造方法。但是，需要注意的是，本文描述的示例性实施例都是具有描述意义，而非出于限制目的。每个实施例中对特征和外观的描述一般应被考虑为可用于其他实施例的类似特征和外观。

Claims (20)

1.一种半导体器件，包括：
化合物半导体层，其包含第Ⅲ到第Ⅵ主族中的至少一种元素；
电介质层，其布置在所述化合物半导体层上；以及
氧吸附层，其插入在所述化合物半导体层与所述电介质层之间，所述氧吸附层包含与所述化合物半导体层的材料相比对氧有更高亲和性的材料。
2.根据权利要求1所述的半导体器件，其中所述氧吸附层包含过渡金属、掺杂金属、镧系金属、硫化物和氮化物中的至少一种。
3.根据权利要求2所述的半导体器件，其中所述过渡金属包括Ti、Sc和Y中的至少一种。
4.根据权利要求2所述的半导体器件，其中所述掺杂金属包括Y掺杂Zr和Al掺杂Zr中的至少一种。
5.根据权利要求2所述的半导体器件，其中所述硫化物包括HfS2、TiS2、LaSx和SiS2中的至少一种。
6.根据权利要求2所述的半导体器件，其中所述氮化物包括AlN、GaN、HfN和SiN中的至少一种。
7.根据权利要求1所述的半导体器件，其中所述氧吸附层的厚度等于或小于10nm。
8.根据权利要求1所述的半导体器件，其中所述电介质层包括HfO2、Al2O3、La2O3、ZrO2、HfSiO、HfSiON、HfLaO、LaAlO和SrTiO中的至少一种。
9.根据权利要求1所述的半导体器件，其还包括：
钝化层，其插入在所述化合物半导体层与所述氧吸附层之间。
10.根据权利要求9所述的半导体器件，其中所述钝化层包含形成在所述化合物半导体层表面上的S、N、F、Cl和H中的至少一种。
11.一种制造半导体器件的方法，该方法包括步骤：
在化合物半导体层上形成氧吸附层，所述化合物半导体包含第Ⅲ到第Ⅵ主族的至少一种元素，所述氧吸附层包含与所述化合物半导体层的材料相比对氧有更高亲和性的材料；以及
在所述氧吸附层上形成电介质层。
12.根据权利要求11所述的方法，其中所述氧吸附层包含过渡金属、掺杂金属、镧系金属、硫化物和氮化物中的至少一种。
13.根据权利要求12所述的方法，其中所述过渡金属包括Ti、Sc和Y中的至少一种。
14.根据权利要求12所述的方法，其中所述掺杂金属包括Y掺杂Zr和Al掺杂Zr中的至少一种。
15.根据权利要求12所述的方法，其中所述硫化物包括HfS2、TiS2、LaSx和SiS2中的至少一种。
16.根据权利要求12所述的方法，其中所述氮化物包括AlN、GaN、HfN和SiN中的至少一种。
17.根据权利要求12所述的方法，其中所述形成氧吸附层的步骤包括使用原子层沉积方法、化学气相沉积方法或溅射法。
18.根据权利要求17所述的方法，还包括步骤：
对所述氧吸附层和所述电介质层中的至少一个进行热处理。
19.根据权利要求11所述的方法，还包括步骤：
在形成所述氧吸附层之前在所述化合物半导体层的表面上形成钝化层。
20.根据权利要求19所述的方法，其中所述钝化层包含形成在所述化合物半导体层表面上的S、N、F、Cl和H中的至少一种。
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