CN104425294A - 一种植球装置及其植球方法 - Google Patents

一种植球装置及其植球方法 Download PDF

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CN104425294A
CN104425294A CN201310686767.XA CN201310686767A CN104425294A CN 104425294 A CN104425294 A CN 104425294A CN 201310686767 A CN201310686767 A CN 201310686767A CN 104425294 A CN104425294 A CN 104425294A
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ball
layer
substrate
dielectric layer
tin cream
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廖宗仁
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Chipmos Technologies Inc
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Chipmos Technologies Inc
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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Abstract

本公开提供一种植球装置及其植球方法。植球装置包含一基板、一介电层以及一锡膏。该基板包含一表面。该介电层设置于该表面上，其中该介电层包含复数个孔洞。该锡膏填充于该复数个孔洞，其中该锡膏的一顶面与该介电层的一暴露面齐平。

Description

一种植球装置及其植球方法
技术领域
本公开涉及一种植球装置，更具体地说，涉及一种无需运用植球机的植球装置及其植球方法。 
技术背景
目前的植锡球的制程皆需要植球机及昂贵的植球板(ball mount stencil)。由于植球板的孔洞尺寸及孔洞的间距无法因应不同的需求而弹性调整，因为植球板的制造时间约需要约两个月。有时候在植球过程中，常发现有锡球阻塞于植球板孔洞的现象。另外，植球板与晶圆分离时，也会有锡球掉落的问题。再者，目前的植球板由于植球板孔洞制造极限的因素，目前并无法应用于适用较小球径的场合，例如小于100um的球径，如铜柱制程的晶圆。由于植球板的材质为金属(通常为钢)，常常会有金属疲劳而造成弯曲的现象发生。 
发明内容
本公开提供一种植球装置，其包含一基板、一介电层以及一锡膏。该基板包含一表面。该介电层设置于该表面上，且该介电层包含复数个孔洞。该锡膏填充于该复数个孔洞中，且该锡膏的一顶面与该介电层的一暴露面齐平。 
本公开亦提供一种植球方法，包含下列步骤： 
提供一基板； 
设置一介电层于该基板的一表面上； 
光刻该介电层而形成复数个孔洞于该介电层； 
涂布一锡膏于该复数个孔洞内，其中该锡膏的一顶面与该介电层的一暴露面齐平； 
提供一晶圆层，其中至少一球下冶金层或至少一金属柱设置于该晶圆层的一连接面上； 
回焊该晶圆层及该基板而使该锡膏连接于该至少一球下冶金层或该至少一金属柱上； 
去除该介电层；以及 
回焊该设置于该至少一球下冶金层或该至少一金属柱上的该锡膏而形成锡球。 
本公开的其他目的，部分将在后续说明中陈述，而部分可由内容说明中轻易得知，或可由本公开的实施而得知。本公开的各方面将可利用后附的权利要求书中所特别指出的元件及组合而理解并达成。需了解，先述的一般说明及下列详细说明均仅作举例之用，并非用以限制本公开。 
附图说明
下列图示为并入说明书内容的一部分，以供阐述本公开的各种实施例，进而清楚解释本公开的技术原理。 
当并同各附图而阅览时，即可更佳了解本公开的前揭摘要以及上文详细说明。为达本公开的说明目的，各附图里图绘有现属较佳的各具体实施例。然应了解本公开并不限于所绘的精确排置方式及设备装置。 
为了使本公开的叙述更加详尽与完备，可参照下列描述并配合下列附图，其中类似的元件符号代表类似的元件。然而以下实施例中所述，仅用以说明本公开，并非用以限制本公开的范围。 
图1为根据本发明的一种实施例的基板及其表面的示意图； 
图2为根据本发明的一种实施例的介电层设置于基板表面上的 示意图； 
图3为根据本发明的一种实施例的球下冶金层的示意图； 
图4为根据本发明的一种实施例的光刻于基板上的介电层的示意图； 
图5为根据本发明的一种实施例的涂布锡膏于介电层的孔洞的示意图； 
图6为根据本发明的一种实施例的对齐该复数个孔洞于该至少一球下冶金层的示意图； 
图7为根据本发明的一种实施例的回焊该至少一球下冶金层而形成锡球的示意图； 
图8为根据本发明的一种实施例的包含金属柱的晶圆层的示意图； 
图9为根据本发明的一种实施例的对齐该复数个孔洞于该至少一金属柱的示意图；以及 
图10为根据本发明的一种实施例的回焊该至少一金属柱而形成锡球的示意图。 
具体实施方式
在下文中本公开的实施例为配合附图以阐述细节。以下举一些实施例作为本公开的描述，但是本公开不受限于所举的一些实施例。又，所举的多个实施例之间有可以相互适当结合，达成另一些实施例。 
本公开的植球方法包含许多步骤。如图1所示，提供一基板10。在此实施例中，基板10包含一表面11。在此实施例中，基板10可为玻璃基板。由于基板10为玻璃基板，因此可避免基板10因金属疲劳而造成弯曲的现象发生。此外，玻璃基板的尺寸容易裁切，因此可以因应不同的需求而弹性调整，而可缩短基板10的制造时间。另，玻璃基板较一金属植球板的费用明显较低，是故本公开可达成减少生 产费用的结果。 
如图2所示，介电层20设置于表面11上。在此说明书及权利要求书中的名词“上”包含第一物件直接或间接地设置于第二物件的上方。例如，介电层20设置于表面11上就包含，介电层20“直接”设置于表面11上及介电层20“间接”设置于表面11上，两种意义。此处的“间接”是指两个物件在某一方位的垂直方向中具有上与下的关系，且两者中间仍有其他物体、物质或间隔将两者隔开。 
如图3所示，提供一晶圆层40，至少一球下冶金层41设置于晶圆层40的一连接面43上。 
如图4所示，光刻介电层20而形成复数个孔洞21于介电层20内。 
如图5所示，涂布一锡膏30于该复数个孔洞21内，锡膏30填充于孔洞21内。换言之，锡膏30并无残留于介电层20的暴露面22上。由于锡膏30与介电层20的暴露面22齐平，因此锡膏30的一顶面31与介电层21的暴露面22齐平。 
在此实施例中，孔洞21贯穿介电层20，因此锡膏30容置于孔洞21内时，锡膏30接触基板10的表面11。然而，在其他实施例(图未示)中，孔洞21亦可设计为不贯穿介电层20，是故锡膏30则无法接触基板10的表面11。 
如图5所示的实施例中，植球装置100包含基板10、介电层20及锡膏30。基板10的平面则形成一与平面垂直的法线方向N。锡膏30的顶面31沿垂直于基板10的法线方向N的一方向具有预设宽度W。传统的植球板内的孔洞尺寸(例如270μm)一定要大于锡球尺寸(例如250μm)，才能使锡球经由植球板内的孔洞(图未示)而接合于连接处(例如220μm的球下冶金层)。因此，传统方法无法将锡球尺寸设计成小于或等于与连接处尺寸。相较之下，在图5的实施例中，预设宽度W约大于球下冶金层41，但在其他实施例(图未示)中，预设宽度W可小于球下冶金层41宽度的二分之一或等于球下冶金层41的 宽度。 
如图5所示，由于锡膏30填充于孔洞21内，因此预设宽度W由孔洞21的宽度而决定。因为孔洞21的宽度由光刻的步骤来决定，因此预设宽度W可由光刻的时间及显影的图案来决定，并可根据球下冶金层41宽度而调整。是故，上述图4的光刻步骤可进一步包含形成沿垂直于基板10的法线方向N的一方向具有一预设宽度W的孔洞21的步骤，进而使顶面31具有预设宽度W。由于预设宽度W可由光刻步骤所决定，因此可依据不同的设计需求而调整，因此不会发生锡球阻塞于植球板孔洞的现象。 
如图6所示，晶圆层40与植球装置100的基板10相互对齐。换言之，基板10上的孔洞21对齐于至少一球下冶金层41，于其它实施例中，该球下冶金层41上亦可预先设置助焊剂(未图示)。 
如图7所示，回焊晶圆层40及基板10，进而使锡膏30连接于至少一球下冶金层41上。在此实施例中，回焊步骤进一步包含接合晶圆层40及基板10的步骤，而使晶圆层40上的至少一球下冶金层41接触锡膏30。 
如图7所示，介电层20被去除的步骤可另包含剥离晶圆层40及基板10的步骤。最后回焊设置于至少一球下冶金层41上的锡膏30而形成锡球32，如图7所示。此外，由于介电层20去除的方式可采用化学溶剂去除介电层20，此种方式为化学处理方式并非传统机械力卸除方式，是故当基板10与晶圆层40分离时，锡球掉落的问题几乎不会发生。 
如图8所示，再另一实施例中，至少一金属柱42设置于晶圆层40的连接面43上。其他先前的步骤已如图1及图2的步骤所述，其中，前述的金属柱42的材质可为铜、银、镍、铝、钛、镍钒或其合金等。 
如图9所示，对齐至少一金属柱42于孔洞21内的锡膏30，进而接合晶圆层40及基板10。此时，至少一金属柱42接触锡膏30。 在此实施例中，锡膏30沿垂直于基板10的法线方向N的一方向具有预设宽度W(参照图5)。图9所示的实施例中，预设宽度W大于金属柱42的直径，但在其他实施例(图未示)中，锡膏30的预设宽度W可等于金属柱42的直径。 
如图10所示，经由回焊至少一金属柱42上的锡膏30而形成锡球32。是故，藉由本公开的方法及装置，无须植球机即可将锡球应用于金属柱制程的晶圆上，且适用于各种球径大小的应用场合。 
本发明的技术内容及技术特点已揭示如上，然而本发明所属技术领域中具有通常知识者应了解，在不背离后附权利要求书所界定的本发明精神和范围内，本发明的教示及揭示可作种种替换及修饰。例如，上文揭示的许多装置或结构可以不同方法实施或以其它结构予以取代，或者采用上述二种方式的组合。 
此外，本案的权利范围并不局限于上文揭示的特定实施例的制程、机台、制造、物质的成份、装置、方法或步骤。本发明所属技术领域中具有通常知识者应了解，基于本发明教示及揭示制程、机台、制造、物质的成份、装置、方法或步骤，无论现在已存在或日后开发者，其与本案实施例揭示者以实质相同的方式执行实质相同的功能，而达到实质相同的结果，亦可使用于本发明。因此，以下的权利要求书用以涵盖用以此类制程、机台、制造、物质的成份、装置、方法或步骤。 
附图标记说明
10   基板 
11   表面 
20   介电层 
21   孔洞 
22   暴露面 
30   锡膏 
31   顶面 
32   锡球 
40   晶圆层 
41   球下冶金层 
42   金属柱 
43   连接面 
100  植球装置 
N    法线方向 
W    预设宽度 。 

Claims (10)

1.一种植球装置，包含：
一基板，包含一表面；
一介电层，设置于该表面上，其中该介电层包含复数个孔洞；以及
一锡膏，填充于该复数个孔洞，其中该锡膏的一顶面与该介电层的一暴露面齐平。
2.根据权利要求1所述的植球装置，其中该锡膏接触该表面。
3.根据权利要求1所述的植球装置，其中该顶面沿垂直于该基板的法线方向的一方向具有一预设宽度。
4.根据权利要求1所述的植球装置，其中该基板为玻璃基板。
5.一种植球方法，包含：
提供一基板；
设置一介电层于一表面上；
光刻该介电层而形成复数个孔洞于该介电层；
涂布一锡膏于该复数个孔洞，其中该锡膏的一顶面与该介电层的一暴露面齐平；
提供一晶圆层，其中至少一球下冶金层或至少一金属柱设置于该晶圆层的一连接面上；
回焊该晶圆层及该基板而使该锡膏连接于该至少一球下冶金层或该至少一金属柱上；
去除该介电层；以及
回焊该设置于该至少一球下冶金层或该至少一金属柱上的该锡膏而形成锡球。
6.根据权利要求5所述的植球方法，其中该回焊步骤进一步包含接合晶圆层及该基板的步骤，而使该晶圆层上的该至少一球下冶金层或该至少一金属柱接触该锡膏。
7.根据权利要求5所述的植球方法，其中该光刻步骤进一步包含形成沿垂直于该基板的法线方向的一方向具有一预设宽度的该孔洞的步骤，而使该顶面具有该预设宽度。
8.根据权利要求5所述的植球方法，其中该基板为玻璃基板。
9.根据权利要求5所述的植球方法，其中该晶圆层提供步骤进一步包含对齐该复数个孔洞于该至少一球下冶金层或该至少一金属柱的步骤。
10.根据权利要求5所述的植球方法，其中该介电层去除步骤进一步包含剥离该晶圆层及该基板的步骤。
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