CN104393169A - 一种无需外部磁场的自旋轨道动量矩磁存储器 - Google Patents
一种无需外部磁场的自旋轨道动量矩磁存储器 Download PDFInfo
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- CN104393169A CN104393169A CN201410531733.8A CN201410531733A CN104393169A CN 104393169 A CN104393169 A CN 104393169A CN 201410531733 A CN201410531733 A CN 201410531733A CN 104393169 A CN104393169 A CN 104393169A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000005641 tunneling Effects 0.000 claims abstract description 11
- 230000005415 magnetization Effects 0.000 claims description 19
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 16
- 239000007769 metal material Substances 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 11
- 229910019236 CoFeB Inorganic materials 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 10
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910003321 CoFe Inorganic materials 0.000 claims description 4
- 229910018936 CoPd Inorganic materials 0.000 claims description 4
- 229910000863 Ferronickel Inorganic materials 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- OQCGPOBCYAOYSD-UHFFFAOYSA-N cobalt palladium Chemical compound [Co].[Co].[Co].[Pd].[Pd] OQCGPOBCYAOYSD-UHFFFAOYSA-N 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 85
- 238000010586 diagram Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000002999 depolarising effect Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (7)
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CN201410531733.8A CN104393169B (zh) | 2014-10-10 | 2014-10-10 | 一种无需外部磁场的自旋轨道动量矩磁存储器 |
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CN201410531733.8A CN104393169B (zh) | 2014-10-10 | 2014-10-10 | 一种无需外部磁场的自旋轨道动量矩磁存储器 |
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CN104393169A true CN104393169A (zh) | 2015-03-04 |
CN104393169B CN104393169B (zh) | 2017-01-25 |
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Cited By (46)
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CN105374935A (zh) * | 2015-12-01 | 2016-03-02 | 中电海康集团有限公司 | 一种用于stt-mram的含有不均匀势垒层的磁性隧道结 |
CN105702416A (zh) * | 2016-04-18 | 2016-06-22 | 北京航空航天大学 | 一种具有强垂直磁各向异性的多层膜 |
CN106025063A (zh) * | 2016-05-19 | 2016-10-12 | 华为技术有限公司 | 磁隧道结以及磁存储器 |
US9608039B1 (en) | 2015-11-16 | 2017-03-28 | Samsung Electronics Co., Ltd. | Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field |
CN107045881A (zh) * | 2015-10-22 | 2017-08-15 | Hgst荷兰公司 | 底部钉扎sot‑mram位结构和制造方法 |
US9830966B2 (en) | 2015-10-29 | 2017-11-28 | Western Digital Technologies, Inc. | Three terminal SOT memory cell with anomalous Hall effect |
US9830968B2 (en) | 2016-03-16 | 2017-11-28 | Kabushiki Kaisha Toshiba | Spin orbit torque (SOT) magnetic memory cell and array |
US9837602B2 (en) | 2015-12-16 | 2017-12-05 | Western Digital Technologies, Inc. | Spin-orbit torque bit design for improved switching efficiency |
JP2018026525A (ja) * | 2016-07-29 | 2018-02-15 | Tdk株式会社 | スピン流磁化反転素子、素子集合体及びスピン流磁化反転素子の製造方法 |
US9899071B2 (en) | 2016-01-20 | 2018-02-20 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
CN107785481A (zh) * | 2016-08-25 | 2018-03-09 | 中电海康集团有限公司 | 一种三端式磁性随机存储器及其读写方法 |
CN108010549A (zh) * | 2017-12-04 | 2018-05-08 | 西安交通大学 | 一种自旋极化电流发生器及其磁性装置 |
CN108292705A (zh) * | 2015-11-27 | 2018-07-17 | Tdk株式会社 | 自旋流磁化反转元件、磁阻效应元件及磁存储器 |
CN108320768A (zh) * | 2018-01-19 | 2018-07-24 | 上海磁宇信息科技有限公司 | 一种使用加强自旋霍尔效应的磁性随机存储器 |
CN108400236A (zh) * | 2018-01-19 | 2018-08-14 | 上海磁宇信息科技有限公司 | 一种使用加强自旋霍尔效应的磁性随机存储器 |
CN109273593A (zh) * | 2018-08-23 | 2019-01-25 | 同济大学 | 利用电流驱动磁矩翻转的单层铁磁材料及其应用 |
CN109427965A (zh) * | 2017-09-05 | 2019-03-05 | Tdk株式会社 | 自旋流磁化旋转元件、自旋轨道转矩型磁阻效应元件 |
CN109493900A (zh) * | 2017-09-11 | 2019-03-19 | 三星电子株式会社 | 存储器装置、用于提供其的方法及三维可堆叠存储器装置 |
WO2019061852A1 (zh) * | 2017-09-26 | 2019-04-04 | 中电海康集团有限公司 | Mram与其制作方法 |
CN109638151A (zh) * | 2018-12-04 | 2019-04-16 | 中国科学院上海微系统与信息技术研究所 | 存储单元、低温存储器及其读写方法 |
CN109742229A (zh) * | 2018-12-26 | 2019-05-10 | 中国科学院微电子研究所 | 一种自旋轨道矩磁阻式随机存储器及其制造方法 |
CN109804478A (zh) * | 2016-10-01 | 2019-05-24 | 国际商业机器公司 | 具有偏心电流的自旋转移矩磁隧道结 |
WO2019106436A1 (en) * | 2017-11-29 | 2019-06-06 | The Hong Kong University Of Science And Technology | Design of spin-orbit torque magnetic random access memory |
CN109962159A (zh) * | 2019-04-04 | 2019-07-02 | 中南大学 | 一种垂直型-异域有机自旋电子器件的制备工艺和应用 |
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US10546622B2 (en) | 2017-11-28 | 2020-01-28 | Industrial Technology Research Institute | Spin-orbit torque MRAMs and method for fabricating the same |
CN110800057A (zh) * | 2017-06-28 | 2020-02-14 | 威斯康星州男校友研究基金会 | 基于4d和5d过渡金属钙钛矿的磁性存储器设备 |
CN111105824A (zh) * | 2018-10-29 | 2020-05-05 | 台湾积体电路制造股份有限公司 | 磁性存储器及其制造方法 |
CN111540395A (zh) * | 2020-03-25 | 2020-08-14 | 北京航空航天大学 | 磁性随机存储单元及其数据写入方法 |
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CN111640769A (zh) * | 2019-03-01 | 2020-09-08 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
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CN112151089A (zh) * | 2019-06-28 | 2020-12-29 | 中电海康集团有限公司 | 存储器 |
CN112582531A (zh) * | 2019-09-30 | 2021-03-30 | 华为技术有限公司 | 一种磁性存储器及其制备方法 |
CN113130736A (zh) * | 2016-10-27 | 2021-07-16 | Tdk株式会社 | 自旋轨道转矩型磁化反转元件、磁存储器及高频磁性器件 |
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US11165013B2 (en) | 2018-12-21 | 2021-11-02 | Imec Vzw | Spin-orbit torque magnetic tunnel junction device and method of fabricating same |
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CN116847715A (zh) * | 2023-08-30 | 2023-10-03 | 北京芯可鉴科技有限公司 | 基于交换偏置的自旋轨道矩磁存储单元、磁随机存储器 |
US12035636B2 (en) | 2023-04-27 | 2024-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic device and magnetic random access memory |
Families Citing this family (1)
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CN107045881A (zh) * | 2015-10-22 | 2017-08-15 | Hgst荷兰公司 | 底部钉扎sot‑mram位结构和制造方法 |
US9830966B2 (en) | 2015-10-29 | 2017-11-28 | Western Digital Technologies, Inc. | Three terminal SOT memory cell with anomalous Hall effect |
US10290337B2 (en) | 2015-10-29 | 2019-05-14 | Western Digital Technologies, Inc. | Three terminal SOT memory cell with anomalous hall effect |
US9608039B1 (en) | 2015-11-16 | 2017-03-28 | Samsung Electronics Co., Ltd. | Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field |
CN108292705B (zh) * | 2015-11-27 | 2022-01-18 | Tdk株式会社 | 自旋流磁化反转元件、磁阻效应元件及磁存储器 |
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CN108292705A (zh) * | 2015-11-27 | 2018-07-17 | Tdk株式会社 | 自旋流磁化反转元件、磁阻效应元件及磁存储器 |
CN105374935A (zh) * | 2015-12-01 | 2016-03-02 | 中电海康集团有限公司 | 一种用于stt-mram的含有不均匀势垒层的磁性隧道结 |
US9837602B2 (en) | 2015-12-16 | 2017-12-05 | Western Digital Technologies, Inc. | Spin-orbit torque bit design for improved switching efficiency |
US9899071B2 (en) | 2016-01-20 | 2018-02-20 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
US9830968B2 (en) | 2016-03-16 | 2017-11-28 | Kabushiki Kaisha Toshiba | Spin orbit torque (SOT) magnetic memory cell and array |
CN105702416A (zh) * | 2016-04-18 | 2016-06-22 | 北京航空航天大学 | 一种具有强垂直磁各向异性的多层膜 |
CN106025063B (zh) * | 2016-05-19 | 2019-11-19 | 华为技术有限公司 | 磁隧道结以及磁存储器 |
CN106025063A (zh) * | 2016-05-19 | 2016-10-12 | 华为技术有限公司 | 磁隧道结以及磁存储器 |
JP2018026525A (ja) * | 2016-07-29 | 2018-02-15 | Tdk株式会社 | スピン流磁化反転素子、素子集合体及びスピン流磁化反転素子の製造方法 |
CN107785481B (zh) * | 2016-08-25 | 2021-10-29 | 中电海康集团有限公司 | 一种三端式磁性随机存储器及其读写方法 |
CN107785481A (zh) * | 2016-08-25 | 2018-03-09 | 中电海康集团有限公司 | 一种三端式磁性随机存储器及其读写方法 |
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