CN104282741A - 场截止型反向导通绝缘栅双极型晶体管及其制造方法 - Google Patents
场截止型反向导通绝缘栅双极型晶体管及其制造方法 Download PDFInfo
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- CN104282741A CN104282741A CN201310283363.6A CN201310283363A CN104282741A CN 104282741 A CN104282741 A CN 104282741A CN 201310283363 A CN201310283363 A CN 201310283363A CN 104282741 A CN104282741 A CN 104282741A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 71
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- 230000005684 electric field Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 31
- 238000001259 photo etching Methods 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000002161 passivation Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201310283363.6A CN104282741B (zh) | 2013-07-05 | 2013-07-05 | 场截止型反向导通绝缘栅双极型晶体管及其制造方法 |
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CN201310283363.6A CN104282741B (zh) | 2013-07-05 | 2013-07-05 | 场截止型反向导通绝缘栅双极型晶体管及其制造方法 |
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CN104282741A true CN104282741A (zh) | 2015-01-14 |
CN104282741B CN104282741B (zh) | 2017-08-11 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783984A (zh) * | 2016-11-22 | 2017-05-31 | 全球能源互联网研究院 | 一种双面终端结构、逆导型半导体器件及其制备方法 |
CN107910254A (zh) * | 2017-09-30 | 2018-04-13 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅场限环终端结构设计方法 |
CN108039366A (zh) * | 2017-10-24 | 2018-05-15 | 全球能源互联网研究院 | 一种绝缘栅双极型晶体管反型mos过渡区结构及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1367649A2 (en) * | 2002-05-17 | 2003-12-03 | Ixys Corporation | Power device having electrodes on a top surface thereof |
CN102420133A (zh) * | 2011-09-30 | 2012-04-18 | 上海华虹Nec电子有限公司 | Igbt器件的制造方法 |
CN102479788A (zh) * | 2010-11-25 | 2012-05-30 | 株式会社电装 | 半导体器件 |
CN103065962A (zh) * | 2011-10-18 | 2013-04-24 | 上海华虹Nec电子有限公司 | 绝缘栅双极晶体管的制造方法 |
-
2013
- 2013-07-05 CN CN201310283363.6A patent/CN104282741B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1367649A2 (en) * | 2002-05-17 | 2003-12-03 | Ixys Corporation | Power device having electrodes on a top surface thereof |
CN102479788A (zh) * | 2010-11-25 | 2012-05-30 | 株式会社电装 | 半导体器件 |
CN102420133A (zh) * | 2011-09-30 | 2012-04-18 | 上海华虹Nec电子有限公司 | Igbt器件的制造方法 |
CN103065962A (zh) * | 2011-10-18 | 2013-04-24 | 上海华虹Nec电子有限公司 | 绝缘栅双极晶体管的制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783984A (zh) * | 2016-11-22 | 2017-05-31 | 全球能源互联网研究院 | 一种双面终端结构、逆导型半导体器件及其制备方法 |
CN106783984B (zh) * | 2016-11-22 | 2021-12-03 | 全球能源互联网研究院 | 一种双面终端结构、逆导型半导体器件及其制备方法 |
CN107910254A (zh) * | 2017-09-30 | 2018-04-13 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅场限环终端结构设计方法 |
CN107910254B (zh) * | 2017-09-30 | 2020-01-24 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅场限环终端结构设计方法 |
CN108039366A (zh) * | 2017-10-24 | 2018-05-15 | 全球能源互联网研究院 | 一种绝缘栅双极型晶体管反型mos过渡区结构及其制作方法 |
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Inventor after: Deng Xiaoshe Inventor after: Zhang Shuo Inventor after: Rui Qiang Inventor after: Wang Genyi Inventor after: Zhang Dacheng Inventor before: Zhang Shuo Inventor before: Rui Qiang Inventor before: Deng Xiaoshe Inventor before: Wang Genyi |
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Effective date of registration: 20171009 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |