CN104272427B - 具有对准传感器和射束测量传感器的带电粒子光刻系统 - Google Patents

具有对准传感器和射束测量传感器的带电粒子光刻系统 Download PDF

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Publication number
CN104272427B
CN104272427B CN201380022770.XA CN201380022770A CN104272427B CN 104272427 B CN104272427 B CN 104272427B CN 201380022770 A CN201380022770 A CN 201380022770A CN 104272427 B CN104272427 B CN 104272427B
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CN
China
Prior art keywords
charged particle
chuck
narrow beam
measurement
sensor
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CN201380022770.XA
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English (en)
Chinese (zh)
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CN104272427A (zh
Inventor
P.I.谢弗斯
J.A.梅杰
E.斯洛特
V.S.凯珀
N.弗奇尔
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ASML Netherlands BV
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Mapper Lithopraphy IP BV
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201380022770.XA 2012-03-08 2013-03-08 具有对准传感器和射束测量传感器的带电粒子光刻系统 Active CN104272427B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261608513P 2012-03-08 2012-03-08
US61/608,513 2012-03-08
PCT/EP2013/054723 WO2013132064A2 (en) 2012-03-08 2013-03-08 Charged particle lithography system with alignment sensor and beam measurement sensor

Publications (2)

Publication Number Publication Date
CN104272427A CN104272427A (zh) 2015-01-07
CN104272427B true CN104272427B (zh) 2017-05-17

Family

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Family Applications (1)

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CN201380022770.XA Active CN104272427B (zh) 2012-03-08 2013-03-08 具有对准传感器和射束测量传感器的带电粒子光刻系统

Country Status (7)

Country Link
US (2) US9665014B2 (https=)
JP (4) JP2015509666A (https=)
KR (1) KR101902469B1 (https=)
CN (1) CN104272427B (https=)
NL (1) NL2010409C2 (https=)
TW (1) TWI584334B (https=)
WO (1) WO2013132064A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11961698B2 (en) 2020-06-10 2024-04-16 Asml Netherlands B.V. Replaceable module for a charged particle apparatus

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013132064A2 (en) * 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
US9429856B1 (en) 2013-01-21 2016-08-30 Kla-Tencor Corporation Detectable overlay targets with strong definition of center locations
JP2014225428A (ja) * 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
NL2012029C2 (en) * 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
JP2015177032A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
NL2015100A (en) * 2014-07-30 2016-07-07 Asml Netherlands Bv Alignment sensor and lithographic apparatus background.
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
WO2016150631A1 (en) * 2015-03-23 2016-09-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
TWI794530B (zh) * 2018-07-20 2023-03-01 美商應用材料股份有限公司 基板定位設備及方法
TWI812991B (zh) * 2020-09-03 2023-08-21 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子系統及操作帶電粒子系統之方法
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
CA3249191A1 (en) 2022-04-20 2025-06-17 Nippon Steel Corporation HOT-DIP PLATED STEEL MATERIAL
WO2025223848A1 (en) * 2024-04-23 2025-10-30 Carl Zeiss Smt Gmbh Inspection apparatus for 3D tomography with improved stand-still performance

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020067473A1 (en) * 2000-06-19 2002-06-06 Nobuyoshi Deguchi Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
CN1717631A (zh) * 2002-10-25 2006-01-04 迈普尔平版印刷Ip有限公司 光刻系统
CN101158818A (zh) * 2007-11-16 2008-04-09 上海微电子装备有限公司 一种对准装置与对准方法、像质检测方法
CN101300656A (zh) * 2005-09-15 2008-11-05 迈普尔平版印刷Ip有限公司 光刻系统、传感器和测量方法
CN101487985A (zh) * 2009-02-18 2009-07-22 上海微电子装备有限公司 用于光刻设备的对准标记搜索系统及其对准标记搜索方法
US20110310373A1 (en) * 2010-06-18 2011-12-22 Canon Kabushiki Kaisha Lithography apparatus and device manufacturing method

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0049872B1 (en) * 1980-10-15 1985-09-25 Kabushiki Kaisha Toshiba Electron beam exposure system
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
JP2787698B2 (ja) 1989-03-03 1998-08-20 株式会社ニコン アライメント装置および位置検出装置
JP3451606B2 (ja) * 1994-12-08 2003-09-29 株式会社ニコン 投影露光装置
JP3617710B2 (ja) 1994-11-30 2005-02-09 株式会社ニコン 投影露光装置
US5912469A (en) * 1996-07-11 1999-06-15 Nikon Corporation Charged-particle-beam microlithography apparatus
KR100227847B1 (ko) 1997-02-27 1999-11-01 윤종용 서치 얼라인먼트 마크 형성방법
JP2000049070A (ja) * 1998-07-28 2000-02-18 Canon Inc 電子ビーム露光装置、ならびにデバイス製造方法
JP4454706B2 (ja) * 1998-07-28 2010-04-21 キヤノン株式会社 電子ビーム露光方法及び装置、ならびにデバイス製造方法
JP2000049071A (ja) * 1998-07-28 2000-02-18 Canon Inc 電子ビーム露光装置及び方法、ならびにデバイス製造方法
JP2000114137A (ja) 1998-09-30 2000-04-21 Advantest Corp 電子ビーム露光装置及びアライメント方法
JP2001077004A (ja) 1999-09-03 2001-03-23 Hitachi Ltd 露光装置および電子線露光装置
JP2002122412A (ja) 2000-10-17 2002-04-26 Nikon Corp 位置検出装置、露光装置およびマイクロデバイスの製造方法
CN1602451A (zh) * 2001-11-07 2005-03-30 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP4227402B2 (ja) 2002-12-06 2009-02-18 キヤノン株式会社 走査型露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
ATE524822T1 (de) * 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
DE602004010824T2 (de) 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. Modulator-schaltkreise
JP4332891B2 (ja) 2003-08-12 2009-09-16 株式会社ニコン 位置検出装置、位置検出方法、及び露光方法、並びにデバイス製造方法
JP2005116731A (ja) 2003-10-07 2005-04-28 Hitachi High-Technologies Corp 電子ビーム描画装置及び電子ビーム描画方法
WO2005081029A2 (en) * 2004-02-25 2005-09-01 Carl Zeiss Smt Ag Housing structure for mounting optical elements
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
JP3962778B2 (ja) * 2004-06-02 2007-08-22 株式会社日立ハイテクノロジーズ 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置
JP2006269669A (ja) * 2005-03-23 2006-10-05 Canon Inc 計測装置及び計測方法、露光装置並びにデバイス製造方法
KR101433385B1 (ko) * 2005-09-15 2014-08-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 센서 및 측정 방법
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
TWI432908B (zh) 2006-03-10 2014-04-01 瑪波微影Ｉｐ公司 微影系統及投射方法
JP2007288098A (ja) 2006-04-20 2007-11-01 Nikon Corp 試験システム、試験方法、及び試験プログラム
JP2009021372A (ja) 2007-07-11 2009-01-29 Canon Inc 露光装置およびデバイス製造方法
JP5408674B2 (ja) 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
KR101570974B1 (ko) 2008-02-26 2015-11-23 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
ITGE20080036A1 (it) * 2008-04-30 2009-11-01 Dott Ing Mario Cozzani Srl Metodo per il controllo della posizione di un attuatore elettromeccanico per valvole di compressori alternativi.
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
JP2009302154A (ja) 2008-06-10 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
US8254484B2 (en) 2009-01-13 2012-08-28 Samsung Electronics Co., Ltd. Method of dirty paper coding using nested lattice codes
US8638109B2 (en) 2009-12-31 2014-01-28 Mapper Lithography Ip B.V. Capacitive sensing system with differential pairs
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
KR101725299B1 (ko) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
WO2012062932A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
TW201248336A (en) * 2011-04-22 2012-12-01 Mapper Lithography Ip Bv Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer
US9383662B2 (en) * 2011-05-13 2016-07-05 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
WO2013132064A2 (en) * 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020067473A1 (en) * 2000-06-19 2002-06-06 Nobuyoshi Deguchi Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
CN1717631A (zh) * 2002-10-25 2006-01-04 迈普尔平版印刷Ip有限公司 光刻系统
CN101300656A (zh) * 2005-09-15 2008-11-05 迈普尔平版印刷Ip有限公司 光刻系统、传感器和测量方法
CN101158818A (zh) * 2007-11-16 2008-04-09 上海微电子装备有限公司 一种对准装置与对准方法、像质检测方法
CN101487985A (zh) * 2009-02-18 2009-07-22 上海微电子装备有限公司 用于光刻设备的对准标记搜索系统及其对准标记搜索方法
US20110310373A1 (en) * 2010-06-18 2011-12-22 Canon Kabushiki Kaisha Lithography apparatus and device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11961698B2 (en) 2020-06-10 2024-04-16 Asml Netherlands B.V. Replaceable module for a charged particle apparatus

Also Published As

Publication number Publication date
JP2020005005A (ja) 2020-01-09
US9665014B2 (en) 2017-05-30
USRE49732E1 (en) 2023-11-21
JP2015509666A (ja) 2015-03-30
TW201344737A (zh) 2013-11-01
KR101902469B1 (ko) 2018-09-28
WO2013132064A2 (en) 2013-09-12
JP6931317B2 (ja) 2021-09-01
CN104272427A (zh) 2015-01-07
US20150109601A1 (en) 2015-04-23
JP2018061048A (ja) 2018-04-12
JP2022069530A (ja) 2022-05-11
JP7040878B2 (ja) 2022-03-23
TWI584334B (zh) 2017-05-21
NL2010409A (en) 2013-09-10
KR20140138895A (ko) 2014-12-04
NL2010409C2 (en) 2014-08-04
WO2013132064A3 (en) 2013-10-31

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