KR101902469B1 - 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 - Google Patents

정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 Download PDF

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KR101902469B1
KR101902469B1 KR1020147028395A KR20147028395A KR101902469B1 KR 101902469 B1 KR101902469 B1 KR 101902469B1 KR 1020147028395 A KR1020147028395 A KR 1020147028395A KR 20147028395 A KR20147028395 A KR 20147028395A KR 101902469 B1 KR101902469 B1 KR 101902469B1
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South Korea
Prior art keywords
beamlet
charged particle
chuck
substrate
measurement
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KR20140138895A (ko
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폴 이즈메르트 쉐퍼스
잔 안드리어스 마이저
에르빈 슬로트
빈센트 실베스터 쿠이퍼
니엘스 버기어
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020147028395A 2012-03-08 2013-03-08 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 Active KR101902469B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261608513P 2012-03-08 2012-03-08
US61/608,513 2012-03-08
PCT/EP2013/054723 WO2013132064A2 (en) 2012-03-08 2013-03-08 Charged particle lithography system with alignment sensor and beam measurement sensor

Publications (2)

Publication Number Publication Date
KR20140138895A KR20140138895A (ko) 2014-12-04
KR101902469B1 true KR101902469B1 (ko) 2018-09-28

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KR1020147028395A Active KR101902469B1 (ko) 2012-03-08 2013-03-08 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템

Country Status (7)

Country Link
US (2) US9665014B2 (https=)
JP (4) JP2015509666A (https=)
KR (1) KR101902469B1 (https=)
CN (1) CN104272427B (https=)
NL (1) NL2010409C2 (https=)
TW (1) TWI584334B (https=)
WO (1) WO2013132064A2 (https=)

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CN104272427B (zh) * 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
US9123649B1 (en) 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
JP2014225428A (ja) * 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
NL2012029C2 (en) * 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
JP2015177032A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
WO2016015955A1 (en) * 2014-07-30 2016-02-04 Asml Netherlands B.V. Alignment sensor and lithographic apparatus background
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
WO2016150631A1 (en) * 2015-03-23 2016-09-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
TWI794530B (zh) * 2018-07-20 2023-03-01 美商應用材料股份有限公司 基板定位設備及方法
KR20230008209A (ko) * 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈
TWI888948B (zh) * 2020-09-03 2025-07-01 荷蘭商Ａｓｍｌ荷蘭公司 孔徑陣列、包括孔徑陣列之帶電粒子工具、及其相關非暫時性電腦可讀媒體
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
PE20250204A1 (es) 2022-04-20 2025-01-27 Nippon Steel Corp Material de acero enchapado por inmersion en caliente
WO2025223848A1 (en) * 2024-04-23 2025-10-30 Carl Zeiss Smt Gmbh Inspection apparatus for 3D tomography with improved stand-still performance

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Also Published As

Publication number Publication date
WO2013132064A2 (en) 2013-09-12
TW201344737A (zh) 2013-11-01
NL2010409A (en) 2013-09-10
NL2010409C2 (en) 2014-08-04
WO2013132064A3 (en) 2013-10-31
CN104272427B (zh) 2017-05-17
KR20140138895A (ko) 2014-12-04
JP2020005005A (ja) 2020-01-09
USRE49732E1 (en) 2023-11-21
US20150109601A1 (en) 2015-04-23
TWI584334B (zh) 2017-05-21
JP2022069530A (ja) 2022-05-11
JP2015509666A (ja) 2015-03-30
JP2018061048A (ja) 2018-04-12
JP7040878B2 (ja) 2022-03-23
CN104272427A (zh) 2015-01-07
US9665014B2 (en) 2017-05-30
JP6931317B2 (ja) 2021-09-01

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