CN104271332B - 转印方法及热纳米压印装置 - Google Patents

转印方法及热纳米压印装置 Download PDF

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Publication number
CN104271332B
CN104271332B CN201380024210.8A CN201380024210A CN104271332B CN 104271332 B CN104271332 B CN 104271332B CN 201380024210 A CN201380024210 A CN 201380024210A CN 104271332 B CN104271332 B CN 104271332B
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CN
China
Prior art keywords
handled object
fine pattern
mask layer
pattern formation
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380024210.8A
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English (en)
Chinese (zh)
Other versions
CN104271332A (zh
Inventor
细见尚希
古池润
山口布士人
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Asahi Kasei Corp
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Asahi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to CN201510155419.9A priority Critical patent/CN104865792A/zh
Publication of CN104271332A publication Critical patent/CN104271332A/zh
Application granted granted Critical
Publication of CN104271332B publication Critical patent/CN104271332B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
    • B29C59/046Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts for layered or coated substantially flat surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2033/00Use of polymers of unsaturated acids or derivatives thereof as moulding material
    • B29K2033/04Polymers of esters
    • B29K2033/08Polymers of acrylic acid esters, e.g. PMA, i.e. polymethylacrylate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2105/00Condition, form or state of moulded material or of the material to be shaped
    • B29K2105/0005Condition, form or state of moulded material or of the material to be shaped containing compounding ingredients
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628Nonplanar uniform thickness material

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
CN201380024210.8A 2012-05-08 2013-04-30 转印方法及热纳米压印装置 Expired - Fee Related CN104271332B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510155419.9A CN104865792A (zh) 2012-05-08 2013-04-30 转印方法及热纳米压印装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012106937 2012-05-08
JP2012-106937 2012-05-08
JP2012135005 2012-06-14
JP2012-135005 2012-06-14
PCT/JP2013/062590 WO2013168634A1 (ja) 2012-05-08 2013-04-30 転写方法及び熱ナノインプリント装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510155419.9A Division CN104865792A (zh) 2012-05-08 2013-04-30 转印方法及热纳米压印装置

Publications (2)

Publication Number Publication Date
CN104271332A CN104271332A (zh) 2015-01-07
CN104271332B true CN104271332B (zh) 2016-04-13

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CN201380024210.8A Expired - Fee Related CN104271332B (zh) 2012-05-08 2013-04-30 转印方法及热纳米压印装置
CN201510155419.9A Pending CN104865792A (zh) 2012-05-08 2013-04-30 转印方法及热纳米压印装置

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US (1) US20150111005A1 (de)
EP (2) EP2979845A1 (de)
JP (2) JP5560377B2 (de)
KR (2) KR101531143B1 (de)
CN (2) CN104271332B (de)
IN (1) IN2014MN02313A (de)
MY (1) MY171653A (de)
TW (2) TWI495558B (de)
WO (1) WO2013168634A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012176728A1 (ja) * 2011-06-23 2012-12-27 旭化成株式会社 微細パタン形成用積層体及び微細パタン形成用積層体の製造方法
JP6441036B2 (ja) * 2014-11-13 2018-12-19 旭化成株式会社 転写方法
TWI696108B (zh) * 2015-02-13 2020-06-11 日商半導體能源研究所股份有限公司 功能面板、功能模組、發光模組、顯示模組、位置資料輸入模組、發光裝置、照明設備、顯示裝置、資料處理裝置、功能面板的製造方法
JP6637243B2 (ja) * 2015-03-09 2020-01-29 デクセリアルズ株式会社 防曇防汚積層体、及びその製造方法、物品、及びその製造方法、並びに防汚方法
US10471646B2 (en) * 2015-05-19 2019-11-12 The University Of Massachusetts Methods and system for mass production, volume manufacturing of re-entrant structures
CN107924121B (zh) * 2015-07-07 2021-06-08 亿明达股份有限公司 经由纳米压印的选择性表面图案化
JP6502284B2 (ja) * 2016-02-26 2019-04-17 富士フイルム株式会社 感光性転写材料及び回路配線の製造方法
CN105818556A (zh) * 2016-03-25 2016-08-03 南京京晶光电科技有限公司 一种采用纳米压印工艺在基材表面加工cd纹的方法
US10549494B2 (en) * 2016-04-20 2020-02-04 Himax Technologies Limited Imprinting apparatus and imprinting method
TWI656965B (zh) * 2016-04-20 2019-04-21 奇景光電股份有限公司 壓印設備及壓印方法
KR101816838B1 (ko) * 2016-07-08 2018-01-09 주식회사 기가레인 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치
TWI672212B (zh) * 2016-08-25 2019-09-21 國立成功大學 奈米壓印組合體及其壓印方法
KR20180041804A (ko) 2016-10-14 2018-04-25 삼성디스플레이 주식회사 임프린트용 가압 롤러 및 이를 이용한 임프린트 방법
JP6837352B2 (ja) * 2017-02-28 2021-03-03 芝浦機械株式会社 転写装置および転写方法
KR20180105433A (ko) * 2017-03-15 2018-09-28 주식회사 기가레인 임프린트 장치 및 임프린트 방법
KR102569627B1 (ko) * 2017-03-16 2023-08-22 위니베르시떼 덱스-마르세이유 나노임프린트 리소그래피 프로세스 및 그것으로부터 획득가능한 패터닝된 기재
WO2018207233A1 (ja) * 2017-05-08 2018-11-15 Ykk株式会社 プラスチック成型品
CN108987573B (zh) * 2017-06-05 2020-01-24 Tcl集团股份有限公司 量子点薄膜的转印方法
CN109808319B (zh) * 2017-11-20 2020-09-22 Tcl科技集团股份有限公司 一种印章及其制备方法与量子点转印方法
JP7104577B2 (ja) * 2018-07-06 2022-07-21 キヤノン株式会社 平坦化層形成装置、平坦化層の製造方法、および物品製造方法
JP7196820B2 (ja) * 2019-11-11 2022-12-27 豊田合成株式会社 ホットスタンプ装置
US11728199B2 (en) * 2019-12-23 2023-08-15 Asmpt Nexx, Inc. Substrate support features and method of application
US11520228B2 (en) * 2020-09-03 2022-12-06 International Business Machines Corporation Mass fabrication-compatible processing of semiconductor metasurfaces
KR20230140641A (ko) * 2022-03-29 2023-10-10 삼성디스플레이 주식회사 임프린트 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007144995A (ja) * 2005-10-25 2007-06-14 Dainippon Printing Co Ltd 光硬化ナノインプリント用モールド及びその製造方法
JP2010284814A (ja) * 2009-06-09 2010-12-24 Fuji Electric Device Technology Co Ltd スタンパの製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135394B2 (de) 1972-09-01 1976-10-01
JP2006164365A (ja) * 2004-12-06 2006-06-22 Tdk Corp 樹脂マスク層形成方法、情報記録媒体製造方法および樹脂マスク層形成装置
CN100541326C (zh) * 2004-12-30 2009-09-16 中国科学院电工研究所 纳米级别图形的压印制造方法及其装置
WO2008091571A2 (en) * 2007-01-22 2008-07-31 Nano Terra Inc. High-throughput apparatus for patterning flexible substrates and method of using the same
JP4943876B2 (ja) 2007-01-30 2012-05-30 東芝機械株式会社 熱ナノインプリント方法
US20080229941A1 (en) * 2007-03-19 2008-09-25 Babak Heidari Nano-imprinting apparatus and method
US8027086B2 (en) * 2007-04-10 2011-09-27 The Regents Of The University Of Michigan Roll to roll nanoimprint lithography
JP5106933B2 (ja) * 2007-07-04 2012-12-26 ラピスセミコンダクタ株式会社 半導体装置
JP4406452B2 (ja) * 2007-09-27 2010-01-27 株式会社日立製作所 ベルト状金型およびそれを用いたナノインプリント装置
JP2009190300A (ja) * 2008-02-15 2009-08-27 Toppan Printing Co Ltd インプリント法
JP5388539B2 (ja) * 2008-10-28 2014-01-15 旭化成イーマテリアルズ株式会社 パターン形成方法
JP4551957B2 (ja) * 2008-12-12 2010-09-29 株式会社東芝 磁気記録媒体の製造方法
KR20100068830A (ko) * 2008-12-15 2010-06-24 삼성전자주식회사 임프린트 몰드, 임프린트 장치 및 패턴 형성 방법
KR101054916B1 (ko) * 2009-06-26 2011-08-05 주식회사 디엠에스 스템프 분리장치
JP5469941B2 (ja) 2009-07-13 2014-04-16 東芝機械株式会社 転写装置および転写方法
JP5372708B2 (ja) * 2009-11-09 2013-12-18 株式会社日立産機システム 微細構造転写装置
JP2011165855A (ja) * 2010-02-09 2011-08-25 Toshiba Corp パターン形成方法
JP2013110135A (ja) * 2010-03-12 2013-06-06 Bridgestone Corp 光硬化性転写シートを用いた凹凸パターンの形成方法、及びその方法に用いる装置
JP2011240643A (ja) * 2010-05-20 2011-12-01 Bridgestone Corp 樹脂製フィルムを用いた凹凸パターンの形成方法、その方法に使用する装置
JP5349404B2 (ja) * 2010-05-28 2013-11-20 株式会社東芝 パターン形成方法
US10184064B2 (en) * 2011-06-21 2019-01-22 Asahi Kasei Kabushiki Kaisha Inorganic composition for transferring a fine unevenness
JP5872369B2 (ja) * 2012-04-19 2016-03-01 旭化成イーマテリアルズ株式会社 微細凹凸パターン付き基材の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007144995A (ja) * 2005-10-25 2007-06-14 Dainippon Printing Co Ltd 光硬化ナノインプリント用モールド及びその製造方法
JP2010284814A (ja) * 2009-06-09 2010-12-24 Fuji Electric Device Technology Co Ltd スタンパの製造方法

Also Published As

Publication number Publication date
JP5560377B2 (ja) 2014-07-23
IN2014MN02313A (de) 2015-08-07
CN104271332A (zh) 2015-01-07
TWI495558B (zh) 2015-08-11
EP2848391A4 (de) 2015-04-29
JPWO2013168634A1 (ja) 2016-01-07
WO2013168634A8 (ja) 2014-01-16
CN104865792A (zh) 2015-08-26
EP2979845A1 (de) 2016-02-03
US20150111005A1 (en) 2015-04-23
EP2848391A1 (de) 2015-03-18
JP2014187376A (ja) 2014-10-02
KR20150041161A (ko) 2015-04-15
EP2848391B1 (de) 2018-09-19
TW201505818A (zh) 2015-02-16
JP6162640B2 (ja) 2017-07-12
KR101881200B1 (ko) 2018-07-24
KR20140144716A (ko) 2014-12-19
KR101531143B1 (ko) 2015-06-23
TW201408469A (zh) 2014-03-01
TWI598211B (zh) 2017-09-11
MY171653A (en) 2019-10-22
WO2013168634A1 (ja) 2013-11-14

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