201100456 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種抗钮劑及採用該抗姓劑的奈米壓印方法 ，尤其涉及一種奈米壓印抗蚀劑及採用該奈米壓印抗敍 劑的奈米壓印方法Γ ° [先前技術3 [0002] 在先前技術中，製作各種半導體設備時，常需要製作具 有數十奈米到數百奈米的微細結構的奈米圖形。具有上 述微細結構的奈米圖形的製作方法主要有光或電子束的 Ο 光刻方法：首先，使用鱗過掩模或者掃描聚焦的輻射線 或者電子束，輻射光致抗蝕劑組合物或掩膜，上述輻射 . 線或電子束將會改變被曝光區域的抗蝕劑的化學結構； 然後，再通過刻蝕的方法除去被曝光區域或者被曝光區 域外的抗蝕劑，從而獲得特定的圖案。 [0003] 為了適應積體電路技術的迅猛發展，在現有的光學光刻 努力突破解析度極限的同時，下一代光刻技術在最近幾 ❹ 年内獲得大量的研究。例知，極紫外光刻技術採用波長 13〜14nm的光源和精度極高的反射式光學系統，有效降低 了折射系統中強烈的光吸收，但整個光刻系統造價非常 昂貴，限制了該技術的應用。 [_]上世紀九十年代以來，一種新的奈米圖形的製作工藝得 到 了發展（清參見Chou S Y，Krauss P R，Renstorm P. Imprint 〇f sub 25 nm vias and trenches in polymers· Appi· PhyS. Lett., 1995， 67(21): 3114_3116)。上述製作奈米圖形的新技術，在本領域 098120561 表單編號 A0101 第3頁/共26頁 0982035020-0 201100456 中被稱作奈米壓印或者奈米壓印平板印刷術。奈米壓印 係指採用緣有奈米圖形的模板將基片上的抗蝕劑（res_ ist )薄膜壓印奈米圖形，再對基片上的奈米圖形進行處 理’如刻餘、剝離等’最終製成具有奈米結構的圖形和 半導體器件。以奈米壓印技術形成奈米圖案的方法，通 過採用具有奈米圖形的硬性模板壓印抗蝕劑層形成奈米 圖案，而不需要依賴任何輻射曝光形成。所以，奈米壓 印技術可以消除在常規的光刻方法中所必須的限制條件 ，比如對光的波長的限制，以及在抗蝕劑和基底内粒子 的反向散射和光干緣1因此，相對於光刻技術，奈米壓 印技術具有製作成本低、簡單易行、效專高的優點，具 有廣闊的應用前景。 [0005] [0006] 由於奈米壓印技術通過機械方式使聚合物抗蝕劑變形， 而不係通過改變平板印刷術的抗蝕劑的也學性能實現。 因此，奈米壓印技術需要特定的聚合物抗蝕劑，該聚合 物抗蝕劑可以比較容易熱塑形變或光固化，且具有良好 的成膜性，模量巧，係持形變能力，且固化後容易脫模 ，使4?·模板與抗餘劑分離後，該抗姓劑仍然可以保留在 基底。先前技術中，奈米壓印的抗姓劑主要有矽橡膠系 列、環氧樹脂系列、丙烯酸酯系列及聚苯乙烯系列等。 1998年6月30日公告的美國專利5, 772, 905，公開了一 種聚甲基丙烯酸甲酯（PMMA )作為奈米壓印抗蝕劑的技 術方案，通過將聚甲基丙烯酸甲酯在矽片上旋轉澆鑄成 骐，再採用熱壓的方法在基底上形成奈米圖形。所公開 的奈米壓印的方法要求加熱奈米壓印抗钱劑（約2〇〇QC) 098120561 表·單編號A0101 第4頁/共26頁 0982035020-0 201100456 Ο [0007] [0008] Ο [0009] 098120561 使之產生塑性形變，然後再將奈米壓印抗蝕劑冷卻（低 於ΡΜΜΑ的玻璃化轉變溫度Tg，約i〇5sC)固化成型後， 除去模板從而形成奈米級圖形。但係，由於聚甲基丙烯 酸曱酯的玻璃化轉變溫度較高，使得該方法中的加熱溫 度過高，使得該奈米壓印抗蝕劑的力學穩定性降低，與 模板的粘附性強，難以脫模，得到的圖形不平整，使獲 得的奈求圖形的解析度較低。先前技術中，為了提高奈 米圖形的解析度’在壓印之前，常常需要對模板進行預 處理，但係模板的預處理過程繁雜，因此提高了奈米壓 印的工藝複雜度以及成:本該方法不利於實際應用。 【發明内容】 有鑒於此，提供一種奈米壓印抗蝕劑以及採用該奈米壓 印抗#劑的奈米壓印方法實為必要。該餘劑不需要過 高的溫度處理，該方法獲得的圖形的保真度好、解析度 較高。 一種奈米壓印抗蝕劑’該奈米壓印.抗#劑包括以下組分 :高支化低聚物、全氟基聚乙醚、甲基丙烯酸曱酯以及 有機稀釋劑。 一種奈米壓印的方法，其包括以下步驟：提供一基底， 採用所述奈米壓印抗钮劑在所述基底的一個表面形成一 壓印抗蝕層；提供一個表面具有奈米圖形的模板，並將 該模板表面的奈米圖形複製到所述壓印抗蝕層’在所述 壓印抗蝕層形成包括多個凸部及多個凹槽的奈米圖形； 以及將所述奈米圖形轉移至基底，在所述基底表面形成 奈米圖形。 表單編號A0101 第5頁/共26頁 0982035020-0 201100456 [0010] 一種奈米壓印的方法，其包括以下步驟：提供_基底， 在該基底的表面依次形成第一犧牲層以及第二犧牲層； 提供一表面具有奈米圖形的模板’在該模板具有奈米圖 形的表面形成所述奈米壓印抗蝕劑；將基底覆蓋於模板 ，使所述基底的第二犧牲層與所述模板形成有奈米壓印 抗蚀劑的奈米圖形的表面接觸；熱壓所述模板及基底後 ，脫模，在所述基底上形成奈米壓印抗蝕劑組成的奈米 圖形；以及通過刻#的方法，將所述奈米圖形轉移至基 底，在所述基底形成奈米圖形。 [0011] 與先前技術相比較，所述秦来壓印扰叙劑及奈米壓印方 法具有以下優點：其一，該奈米壓印抗蝕劑包含高支化 低聚物，具有較低的玻璃化轉變溫度，熱壓過程可以在 小於75吒的溫度範圍内完成，該高支化倘聚物固化產生 交聯，提高了模量且形變較小。其二，由於該奈米愿印 抗钮劑加人了全氟基聚乙越，全氟基聚乙鱗為低表面能 材料，使得該奈米壓印抗蝕劑固化以後粘附性小在脫 模過程中避免了奈稽印抗_與模板枯連，從而易於 脫模，保證了圖形的完整性及解析度。其三，甲基丙烯 酸甲酯及有機稀釋劑進一步調節了該奈米壓印抗蝕劑的 枯滯性及流動性，使得該奈米壓印抗_充分填充到圖 形中，減少了圖形缺陷的產生，保證了奈米壓印的圖形 的解析度和保真性。其四，本發明提供的奈健印方法 其熱壓溫度低，且模板無須預先處理，使得該方法工 藝簡單，成本低。 【實施方式】 098120561 表單編號A0101 第6頁/共26頁 0982035020-0 201100456 L0012J 以下將結合附圖詳細說明本發明提供的奈米壓印抗蝕劑 以及採用該抗蝕劑的奈米壓印方法。 [0013] 本發明提供一種奈米壓印抗钱劑，該奈米壓印抗餘劑包 括以下組分：高支化低聚物、全氟基聚乙醚、曱基丙烯 酸曱酯以及有機稀釋劑。所述全氟基聚乙醚的化學通式 為：201100456 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a resisting agent and a nanoimprinting method using the anti-surname agent, in particular to a nanoimprint resist and using the same Nanoimprinting method of rice embossing anti-synthesis agent 先前 ° [Prior Art 3 [0002] In the prior art, when manufacturing various semiconductor devices, it is often required to fabricate a nanostructure having a fine structure of several tens of nanometers to several hundreds of nanometers. Meter graphics. A method for fabricating a nano pattern having the above fine structure mainly includes a photolithography method of light or electron beam: first, using a scale-passing mask or scanning a focused radiation or electron beam, irradiating a photoresist composition or masking Membrane, the above radiation. The line or electron beam will change the chemical structure of the resist in the exposed area; then, the exposed area or the resist outside the exposed area is removed by etching to obtain a specific pattern. . [0003] In order to adapt to the rapid development of integrated circuit technology, while the existing optical lithography efforts have broken through the resolution limit, the next generation lithography technology has gained a lot of research in recent years. For example, EUV lithography uses a light source with a wavelength of 13 to 14 nm and a highly accurate reflective optical system, which effectively reduces the strong light absorption in the refractive system, but the entire lithography system is very expensive, which limits the technology. application. [_] Since the 1990s, a new nano-patterning process has been developed (see Chou SY, Krauss PR, Renstorm P. Imprint 〇f sub 25 nm vias and trenches in polymers· Appi· PhyS. Lett., 1995, 67(21): 3114_3116). The above-mentioned new technology for making nano graphics is called nanoimprint or nanoimprint lithography in the field 098120561 Form No. A0101 Page 3 of 26 0982035020-0 201100456. Nano-embossing refers to the use of a template with a nano-pattern to imprint a resist (res_ ist ) film on a substrate with a nano-pattern, and then process the nano-pattern on the substrate 'such as engraving, peeling, etc.' Finally, a pattern and a semiconductor device having a nanostructure are fabricated. A method of forming a nano pattern by a nanoimprint technique is to form a nano pattern by using a hard template imprint resist layer having a nano pattern without relying on any radiation exposure. Therefore, nanoimprint technology can eliminate the restrictions necessary in conventional photolithography methods, such as the limitation of the wavelength of light, and the backscattering and drying of the particles in the resist and the substrate. Therefore, In lithography technology, nano imprint technology has the advantages of low production cost, simple and easy operation, and high efficiency, and has broad application prospects. [0005] Since the nanoimprint technique mechanically deforms the polymer resist, it is not achieved by changing the slick resistance of the lithographic resist. Therefore, nanoimprint technology requires a specific polymer resist, which can be relatively easily thermoplastically deformed or photocured, has good film forming properties, is modular in modulus, and is capable of deforming, and After curing, it is easy to release the mold, and after the template is separated from the anti-surplus agent, the anti-surname agent can still remain on the substrate. In the prior art, nanoimprinted anti-surname agents mainly include an antimony rubber series, an epoxy resin series, an acrylate series, and a polystyrene series. U.S. Patent No. 5,772,905 issued to Jun. 30, the entire disclosure of which is incorporated herein by reference. The wafer is spin-cast into a crucible, and a nano-pattern is formed on the substrate by hot pressing. The disclosed method of nanoimprinting requires heating of nanoimprinting anti-money agent (about 2〇〇QC) 098120561 Table·Single number A0101 Page 4/26 pages 0992035020-0 201100456 Ο [0007] [0008] Ο [0009] 098120561 to plastically deform, and then the nanoimprint resist is cooled (below the glass transition temperature Tg of the crucible, about i 〇 5 sC), and then the template is removed to form a nano-scale pattern. However, due to the high glass transition temperature of the polymethyl methacrylate, the heating temperature in the method is too high, so that the mechanical stability of the nanoimprint resist is lowered, and the adhesion to the template is strong. It is difficult to demold, and the obtained image is not flat, so that the resolution of the obtained image is low. In the prior art, in order to improve the resolution of the nano-patterns, it is often necessary to pre-treat the template before imprinting, but the pre-processing process of the template is complicated, thereby improving the process complexity of the nanoimprinting process and This method is not conducive to practical applications. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a nanoimprint resist and a nanoimprint method using the nanoimprint anti-agent. The residual agent does not require excessive temperature treatment, and the pattern obtained by the method has good fidelity and high resolution. A nanoimprint resist. The nanoimprint.anti# agent comprises the following components: a hyperbranched oligomer, a perfluoropolyether, a decyl methacrylate, and an organic diluent. A method of nanoimprinting, comprising the steps of: providing a substrate, forming an embossing resist layer on one surface of the substrate by using the nanoimprinting resist agent; and providing a surface having a nanograph Copying a template of the surface of the template to the embossed resist layer' forming a nano pattern including a plurality of protrusions and a plurality of grooves in the embossed resist layer; and The meter pattern is transferred to the substrate to form a nanopattern on the surface of the substrate. Form No. A0101 Page 5 of 26 0982035020-0 201100456 [0010] A method of nanoimprinting, comprising the steps of: providing a substrate, sequentially forming a first sacrificial layer and a second sacrificial layer on a surface of the substrate Providing a template having a surface having a nano pattern; forming the nanoimprint resist on a surface of the template having a nano pattern; covering the substrate to the template, and causing the second sacrificial layer of the substrate and the template Forming a surface contact of a nano pattern with a nanoimprint resist; after hot pressing the template and the substrate, demolding, forming a nano pattern composed of a nanoimprint resist on the substrate; In the method of engraving, the nanograph is transferred to a substrate, and a nano pattern is formed on the substrate. [0011] Compared with the prior art, the Qinlai imprinting agent and the nanoimprinting method have the following advantages: First, the nanoimprint resist comprises a high-branched oligomer, which has a lower The glass transition temperature, the hot pressing process can be completed in a temperature range of less than 75 Å, which cures to form crosslinks, increases modulus and has a small deformation. Secondly, since the nano-imprinting anti-button agent adds a perfluoro-based polyethylene, the perfluoro-polyethylene scale is a low surface energy material, so that the nanoimprint resist is cured after curing. In the process of demoulding, the nephew printing resistance _ is avoided, and the template is dry, so that it is easy to demold, and the integrity and resolution of the graphic are ensured. Third, methyl methacrylate and organic diluent further adjust the stagnation and fluidity of the nanoimprint resist, so that the nanoimprint resist is sufficiently filled into the pattern to reduce the pattern defect. Produced to ensure the resolution and fidelity of the nanoimprinted graphics. Fourthly, the nano-printing method provided by the invention has low hot pressing temperature and no need for pre-processing of the template, so that the method is simple in process and low in cost. [Embodiment] 098120561 Form No. A0101 Page 6 / 26 pages 0992035020-0 201100456 L0012J The nanoimprint resist provided by the present invention and the nano imprint method using the same will be described in detail below with reference to the accompanying drawings. . [0013] The present invention provides a nanoimprinting anti-money agent comprising the following components: a hyperbranched oligomer, a perfluoropolyether, a decyl methacrylate, and an organic diluent. . The chemical formula of the perfluoropolyether is:
[0014] H2C 〇 〇 \\ II η2 η2 η II h2 f2 CH3-C-C-0-C -c -N-C-O-C -c- ❹H2C 〇 \\ \\ II η2 η2 η II h2 f2 CH3-C-C-0-C -c -N-C-O-C -c- ❹
H2 H2 Η Π H2 F2 OH，—c一c一〇—C ·Ν — d—o-c _C V 11 H2c ο m:n = 0.7-1 [0015]其中 m:n = 0.6〜1。 [0016] 所述有機稀釋劑為二羥基乙基二甲基乙烯丨所述高支化 低聚物可以經由偏苯三酸酐、乙二醇、環氧丙烯酸共聚 〇 而成，或者還可以經由乙二硫醇、環氧丙烯酸開環共聚 而成。本實施例中，所述高支化低聚物的化學結構式為 [0017] η ί% η2 η2 h2H2 H2 Η Π H2 F2 OH, —c—c—〇·C·Ν — d—o-c _C V 11 H2c ο m:n = 0.7-1 [0015] where m:n = 0.6~1. [0016] The organic diluent is dihydroxyethyl dimethyl hydride. The hyperbranched oligomer may be formed by copolymerization of trimellitic anhydride, ethylene glycol, epoxy acrylate, or may also be via ethanedithiol. And epoxy acrylic acid ring-opening copolymerization. In this embodiment, the chemical structure of the hyperbranched oligomer is [0017] η ί% η2 η2 h2
Hac--c—C-O-HjCHaC o-c -HC-C O-C C V °hI12 ° v -2vH2CHiC-。卷 。心 OH J1 H2 H2 f^H2CH2C V 〇 o 在所述奈米壓印抗蝕劑中，所述高支化低聚物的質量百 分比含量為50%〜60%，全氟基聚乙醚的質量百分比含量為 098120561 表單編號 A0101 第 7 頁/共 26 頁 0982035020-0 201100456 3%〜5%，f基丙烯酸甲酯的質量百分比含量為5% -10% » 所述有機稀釋劑的質量百分比含量為25%~35%。 [0018] [0019] [0020] 本發明提供的奈錢印抗㈣巾，全氟基聚乙醚含氧功 月匕團產生了較低的表面能，甲基丙烯酸甲酯進一步調節 了該奈米壓印抗關_雜和絲性使得該奈米壓 印抗蝕劑在固化以後的形變較小，從而在脫模過程甲避 免了奈米壓印抗蝕劑與模板粘連，使得模板能夠比較容 易地從抗蝕劑中分離，從而提高所得奈米圖形的解析度 。所述高支化低聚物具有較低的玻璃化轉變溫度（Tg) ’ Tg為15。〇45。(： ’在採用奈米壓印法壤備奈米圖形時， 熱壓溫度較低，可以在小於75°c時，固化產生交聯，高 支化低聚物中的笨環產生較高的模量，對髏系的模量提 供貢獻且形變較小。 本發明提供的奈米壓印抗钱劑可以採甩以下方法製備： 將質量百分比含量為50%~§〇%的高支化低聚物，質量百分 比含量為3%〜5%的全氟.基聚...乙.醚’質量百分比含量為 5%〜10%的甲基丙烯酸申酯，以及質量百分比含量為 2 5 / ~ 3 5 %的有機稀釋劑充分共混’靜置1〜3小時後，獲得 一液態的聚合物混合物，採用規格為〇 2μ〜〇 25|α的過濾 筛過濾上述液態的聚合物混合物’除去該液態的聚合物 混合物中的其他雜質，從而製得本發明第一實施例的奈 米壓印抗蝕劑。 另外，本發明提供的奈米壓印抗蝕劑還可以進一步添加 質量百分比含量為5%〜10%的聚乙稀二甲基矽氧烷，由於 098120561 聚乙稀二甲基矽氧烷與基底的附著力較好 ’從而可以提 表單編號Α0101 第8頁/共26頁 0982035020-0 201100456 高該奈米壓印抗蝕劑與基底的附著力。該奈米壓印抗蝕 剤還可以進一步包括質量百分比含量為0.1%〜2%的自由基 引發劑’從而使得該奈米壓印抗蝕劑可以通過光固化或 熱固化。 [0021] 請參閱圖1及圖2，採用本發明提供的奈米壓印抗飾劑的 奈米壓印的方法的第一實施例，其包括以下步驟： [0022] 步驟一 ’提供一基底10，在所述基底1〇的一個表面形成 壓印抗姓層130。 [0023] 首先，在所述基底!0的“個表面形成一第一犧牲層110。 [讓]提供一基底10，清洗該基底1〇 ;在基底〗〇的一表面形成 二〜- 二 r: -» 一聚合物材料層’加熱該聚合物材料層，然後得到一第 一犧牲層110 °所述基底10的材料可以為赛性材料，如拋 光玻璃、砍、二氧化矽或IT0玻璃，所述I底10的材料還 可以為柔性材料’如PSP、ΡΜΜΑ或ΡΕΊ^所述第一犧牲層 、 |乂 - r | 110的材料為一聚合物，該聚合物為聚甲基丙烯酸甲酯、 環氧樹脂、不飽和聚脂或砍.醚板脂等熱固性樹脂。基底 10的一表面形成一聚合物材料層的方法可以為絲網印刷 法或旋塗法等。 [0〇25]本實施例中’所述基底1〇的材料為矽，採用標準工藝清 洗基底10後’於基底1〇的一個表面旋塗聚甲基丙烯酸甲 酯，旋塗轉速為5400轉/分鐘~7000轉/分鐘，時間為0. 5 分鐘〜1. 5分鐘，然後在14〇乞~18〇〇c烘烤3〜5分鐘。從而 在基底10的一個表面形成一第一犧牲層110 ^該第一犧牲 層110的厚度為丨〇〇奈米〜300奈米。本實施例中，所述標 098120561 表單編號A0101 第9頁/共26頁 0982035020-0 201100456 準工藝為超淨間標準清洗工藝。 [0026] 其次，形成一第二犧牲層120覆蓋所述第一犧牲層110。 [0027] 所述第二犧牲層120的材料為金屬，該金屬為鉻或鋁。可 以通過電子束蒸發的方法、濺射法或化學氣相沈積法， 在所述第一犧牲層110上形成所述第二犧牲層120。 [0028] 本實施例中，所述第二犧牲層120的材料為鋁，可通過電 子束蒸發法在所述第一犧牲層110上形成一厚度為30奈米 ~50奈米的銘薄膜，所述電子束蒸發的速率為0.3埃/分鐘 ~ 0. 6埃/分鐘。 [0029] 再次，形成一壓印抗蝕層130覆蓋所述第二犧牲層120。 [0030] 所述壓印抗蝕層130的材料為第一實施例中所述的奈米壓 印抗餘劑，該奈米廢印抗蚀劑包括高支化低聚物、全氟 基聚乙醚、甲基丙烯酸甲酯以及有機稀釋劑。該壓印抗 蝕層130可以通過絲網印刷法、旋塗法等方法形成。具體 地，將上述奈米壓印抗蝕劑採用旋塗的方式塗佈於所述 第二犧牲層120，旋塗轉速為5400轉/分鐘~7000轉/分鐘 ^ ，旋塗時間為0. 5分鐘~2分鐘，然後，在100°C〜120°C下 烘烤2分鐘~4分鐘，從而獲得一壓印抗蝕層130。該壓印 抗蝕層130的厚度為100奈米〜300奈米。 [0031] 可以理解，上述方法中，在基底10的表面形成一個第一 犧牲層110，以及在所述第一犧牲層110上形成一第二犧 牲層120的步驟為可選步驟，亦可直接在所述基底10的一 個表面形成一壓印抗姓層130。 098120561 表單編號A0101 第10頁/共26頁 0982035020-0 201100456 [0032] [0033] [0034] Ο [0035] [0036] Ο 面 脫 098120561 步驟二’提供一個表面具有奈米圖形的模板2〇，並將該 模板2 0表面的奈米圖形複製到所述壓印抗姓層13〇。 首先’提供一表面具有奈米圖形的模板20。 該模板20的材料可為硬性材料，如石夕或者二氧化石夕。$ 〇該 模板20的材料也可為柔性材料，如pet、ΡΜΜΑ、 該模板20可以通過電子束曝光製備’模板2〇的表面步成 有奈米圖形，該奈米圖形由模板20的表面的多個第—凸 部24和多個第一凹槽26構成。本實施例中，該模板 材料為二氧化咬。 ' 其次，將模板20形成有奈米圖形的表面與所述基底表 的壓印抗蝕層130貼合，熱壓所述模板20與基底1〇後 m ° - ·· 可以通過模板20向基底1〇施加壓力，並加熱的方法， 得所述模板20上的奈米圖形轉移到壓印抗蝕層丨 u 〇本實 施例中，採用一熱壓印機實現該方法。具體地，將棋板 20與所述基底1〇分別安裝到熟_ g卩機的兩個壓印盤， 模板20形成有奈米圖形的表面與所述基底1〇表面的壓栏 抗蝕層130貼合，設置壓印機的真空度為5 〇χ1 3 百帕（ mbar)，將基底1〇以及模板20加熱至所述奈米壓印抗蝕 劑的玻璃化轉變溫度（Tg)以上，即45。〇~75。〇， 使愿印 抗蝕層1 3 0的奈米壓印抗蝕劑具有較好的流動性；第 施加壓力為12磅/平方英尺〜15磅/平方英尺)人 持5〜10分鐘，把模板20的第—凸部24壓到基底1〇上的保 印抗蝕層130中，使壓印抗蝕層13〇的奈米壓印抗蝕劑充 表單編號A0101 第11頁/共26頁 〇982〇35〇2〇.〇 201100456 滿模板20的奈米圖形中的第一凹槽26 ;第二次施加壓力 3 5 P s i ~ 6 0 P s i，進行冷卻，待溫度降到奈米壓印抗姓劑 的玻璃化轉變溫度（Tg)附近時，保持5分鐘〜10分鐘， 再將溫度降至25°C〜50°C，將模板20與基底10分離，從 而該模板20表面的奈米圖形複製到所述壓印抗蝕層130。 所述壓印抗蝕層130形成的奈米圖形包括多個第二凹槽16 和第二凸部14。且該第二凹槽16與所述第一凸部24對應 ，所述第二凸部14與所述第一凹槽26對應。 [0037] 步驟三，將所述奈米圖形轉移至基底10，在所述基底10 表面形成奈米圖形。 [0038] 首先，去除所述壓印抗蝕層130的奈米圖形的第二凹槽16 底部殘留的奈米壓印抗蝕劑，露出第二凹槽1 6底部的第 二犧牲層120。 [0039] 所述第二凹槽16底部殘留的奈米壓印抗蝕劑可以通過電 漿刻蝕的方法去除。 [0040] 本實施例中，可以採用氧電漿去除第二凹槽1 6底部殘留 的奈米壓印抗蝕劑。具體地，將上述形成有奈米圖形的 基底10放置于微波電漿系統中，該微波電漿系統的一感 應功率源產生氧電漿，氧電漿以較低的離子能量從產生 區域擴散並漂移至所述基底10的壓印抗蝕層130，此時該 壓印抗蝕層130的第二凹槽1 6底部殘留的奈米壓印抗蝕劑 被所述氧電漿刻蝕。氧電漿系統的功率係40瓦~60瓦，氧 電漿的通入速率為40標況毫升每分（standard-state cubic centimeter per minute，seem)，形成的氣 098120561 表單編號A0101 第12頁/共26頁 0982035020-0 201100456 [0041] [0042] Ο [0043]Hac--c-C-O-HjCHaC o-c -HC-C O-C C V °hI12 ° v -2vH2CHiC-. Volume. Heart OH J1 H2 H2 f^H2CH2C V 〇o In the nanoimprint resist, the mass percentage of the hyperbranched oligomer is 50% to 60%, and the mass percentage of perfluoropolyether The content is 098120561 Form No. A0101 Page 7 of 26 0982035020-0 201100456 3%~5%, the mass percentage of f-methyl acrylate is 5% -10% » The mass percentage of the organic diluent is 25 %~35%. [0020] [0020] The present invention provides a Naiyin printing anti-(four) towel, a perfluoropolyether oxygen-containing work gangue group produces a lower surface energy, and methyl methacrylate further adjusts the nanometer. The imprinting anti-offering and silkiness make the nanoimprint resist less deformed after curing, so that the nanoimprint resist is prevented from sticking to the template during the demolding process, so that the template can be relatively easy. The ground is separated from the resist to increase the resolution of the resulting nanopattern. The hyperbranched oligomer has a lower glass transition temperature (Tg) ' Tg of 15. 〇45. (: 'When using the nano-imprint method to prepare the nano-pattern, the hot-pressing temperature is low, and it can be cured at less than 75 °c to produce cross-linking. The stupid ring in the high-branched oligomer is high. The modulus contributes to the modulus of the lanthanide and has a small deformation. The nanoimprinting anti-money agent provided by the invention can be prepared by the following method: high percentage of content of 50%~§〇% a polymer having a mass percentage of 3% to 5% of a perfluoro-based poly(ethylene ether) having a mass percentage of 5% to 10% of methacrylic acid ester, and a mass percentage of 2 5 / ~ 3 5 % of the organic diluent is thoroughly blended. After standing for 1 to 3 hours, a liquid polymer mixture is obtained, and the liquid polymer mixture is filtered by a filter screen of the specification of 〇2μ~〇25|α. The nanoimprint resist of the first embodiment of the present invention is obtained by using other impurities in the liquid polymer mixture. In addition, the nanoimprint resist provided by the present invention can further add a mass percentage of 5 %~10% of polyethylene dimethyloxane, due to 098120561 poly The adhesion of dimethyloxane to the substrate is good, so that the form number Α0101 can be raised. Page 8/26 pages 0992035020-0 201100456 The adhesion of the nano-imprinted resist to the substrate is high. The resist ruthenium may further comprise a free radical initiator having a mass percentage of 0.1% to 2% so that the nanoimprint resist can be cured by light or heat. [0021] Please refer to FIG. 1 and 2. A first embodiment of a method of nanoimprinting using a nanoimprinting anti-adhesive provided by the present invention, comprising the steps of: [0022] Step 1 'providing a substrate 10 on the substrate One surface forms an imprinted anti-surname layer 130. [0023] First, a first sacrificial layer 110 is formed on the "surface" of the substrate !0. [Let] provide a substrate 10, and clean the substrate 1; One surface of the crucible forms two to two -r: -» a layer of polymer material 'heats the layer of polymer material, and then obtains a first sacrificial layer 110 °. The material of the substrate 10 may be a racing material such as polished glass. , chopped, cerium oxide or IT0 glass, the material of the bottom 10 is also The material of the first sacrificial layer, such as PSP, ΡΜΜΑ or ΡΕΊ^, is a polymer, which is polymethyl methacrylate, epoxy resin, unsaturated polyester. Or chopping a thermosetting resin such as an ether plate grease. A method of forming a polymer material layer on one surface of the substrate 10 may be a screen printing method, a spin coating method, or the like. [0〇25] In the present embodiment, the substrate 1〇 5分钟〜。 The material is 矽, using a standard process to clean the substrate 10 after a surface of the substrate 1 旋 spin coating polymethyl methacrylate, spin coating speed of 5400 rev / min ~ 7000 rev / min, the time is 0. 5 minutes ~ 1. 5 minutes, then bake at 14〇乞~18〇〇c for 3~5 minutes. Thereby, a first sacrificial layer 110 is formed on one surface of the substrate 10. The first sacrificial layer 110 has a thickness of from 丨〇〇 nanometer to 300 nm. In this embodiment, the standard 098120561 Form No. A0101 Page 9 of 26 0982035020-0 201100456 The quasi-process is a standard clean cleaning process. [0026] Next, a second sacrificial layer 120 is formed to cover the first sacrificial layer 110. [0027] The material of the second sacrificial layer 120 is a metal, and the metal is chromium or aluminum. The second sacrificial layer 120 may be formed on the first sacrificial layer 110 by a method of electron beam evaporation, a sputtering method, or a chemical vapor deposition method. [0028] In this embodiment, the material of the second sacrificial layer 120 is aluminum, and a film having a thickness of 30 nm to 50 nm can be formed on the first sacrificial layer 110 by electron beam evaporation. The rate of evaporation of the electron beam is from 0.3 Å/min to 0.6 Å/min. [0029] Again, an embossed resist layer 130 is formed to cover the second sacrificial layer 120. [0030] The material of the embossed resist layer 130 is the nano embossed anti-surge agent described in the first embodiment, and the nano-printed resist includes a highly branched oligomer and a perfluoro group. Ether, methyl methacrylate and organic diluent. The imprint resist layer 130 can be formed by a screen printing method, a spin coating method, or the like. The squeezing time is 0.54 rpm~7000 rpm, and the spin coating time is 0.5. Minutes ~ 2 minutes, and then baked at 100 ° C ~ 120 ° C for 2 minutes ~ 4 minutes, thereby obtaining an embossed resist layer 130. The embossed resist layer 130 has a thickness of from 100 nm to 300 nm. [0031] It can be understood that, in the above method, forming a first sacrificial layer 110 on the surface of the substrate 10, and forming a second sacrificial layer 120 on the first sacrificial layer 110 is an optional step, or directly An imprinted anti-surname layer 130 is formed on one surface of the substrate 10. 098120561 Form No. A0101 Page 10 / Total 26 Page 0992035020-0 201100456 [0032] [0034] [0036] Ο 脱 脱 126 561 561 561 561 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 098 A nanograph of the surface of the template 20 is copied to the imprinted anti-surname layer 13〇. First, a template 20 having a surface with a nano pattern is provided. The material of the template 20 may be a hard material such as Shi Xi or Semenite. $ 〇 The material of the template 20 can also be a flexible material, such as pet, ΡΜΜΑ, the template 20 can be prepared by electron beam exposure to the surface of the template 2 步 into a nano-pattern, the surface of the template 20 The plurality of first protrusions 24 and the plurality of first grooves 26 are formed. In this embodiment, the template material is a dioxide bite. Next, the surface of the template 20 formed with the nano-pattern is attached to the imprinted resist layer 130 of the substrate, and the template 20 and the substrate 1 are hot-pressed. The method of applying pressure and heating causes the nano pattern on the template 20 to be transferred to the embossing resist layer. In this embodiment, the method is implemented using a hot stamping machine. Specifically, the board 20 and the substrate 1 are respectively mounted to two stamping discs of a cooked machine, and the template 20 is formed with a surface of a nano pattern and a pressed resist layer on the surface of the substrate 1 130, the vacuum of the embossing machine is set to 5 〇χ 1 3 kPa, and the substrate 1 〇 and the template 20 are heated to a temperature above the glass transition temperature (Tg) of the nanoimprint resist. That is 45. 〇~75. 〇, the nano-imprint resist resisting the resist layer 130 has good fluidity; the first applied pressure is 12 psi to 15 psi, and the person holds 5 to 10 minutes. The first convex portion 24 of the template 20 is pressed into the protective resist layer 130 on the substrate 1 to make the nano-imprint resist of the imprinted resist layer 13A. Form No. A0101 Page 11 of 26 〇982〇35〇2〇.〇201100456 The first groove 26 in the nanograph of the full template 20; the second application of pressure 3 5 P si ~ 6 0 P si, cooling, until the temperature drops to the nano pressure When the vicinity of the glass transition temperature (Tg) of the anti-surname agent is maintained for 5 minutes to 10 minutes, the temperature is lowered to 25 ° C to 50 ° C, and the template 20 is separated from the substrate 10, thereby forming the surface of the template 20 A meter pattern is copied to the imprinted resist layer 130. The nano pattern formed by the embossed resist layer 130 includes a plurality of second grooves 16 and second protrusions 14. And the second groove 16 corresponds to the first convex portion 24, and the second convex portion 14 corresponds to the first groove 26. [0037] Step 3, transferring the nano pattern to the substrate 10 to form a nano pattern on the surface of the substrate 10. First, the nanoimprint resist remaining at the bottom of the second recess 16 of the nano pattern of the imprint resist 130 is removed to expose the second sacrificial layer 120 at the bottom of the second recess 16. [0039] The nanoimprint resist remaining at the bottom of the second recess 16 can be removed by plasma etching. [0040] In this embodiment, the nanoimprint resist remaining at the bottom of the second recess 16 may be removed by using oxygen plasma. Specifically, the substrate 10 having the nanopattern formed thereon is placed in a microwave plasma system, an inductive power source of the microwave plasma system generates an oxygen plasma, and the oxygen plasma diffuses from the generation region with a lower ion energy. The embossed resist layer 130 is drifted to the substrate 10, and the nanoimprint resist remaining at the bottom of the second recess 16 of the embossed resist layer 130 is etched by the oxygen plasma. The power of the oxygen plasma system is 40 watts to 60 watts, and the oxygen plasma inlet rate is 40 standard cc centimeters per minute (seem). The formed gas 098120561 Form No. A0101 Page 12 / A total of 26 pages 0992035020-0 201100456 [0041] [0042] Ο [0043]
GG
[0044] 壓為2帕，採用氧電漿刻蝕時間為5秒〜15秒。通過上述方 法，第二凹槽16底部殘留的奈米壓印抗蝕劑被去除，露 出第二犧牲層120。 其次，刻蝕第二凹槽16底部的第二犧牲層120，露出第一 犧牲層110。 根據第二犧牲層120材料的不同，可以採用乾法刻蝕或濕 法刻蝕。當所述第二犧牲層120材料為鋁時，採用乾法刻 蝕；當所述第二犧牲層120材料為鉻時，採用乾法刻蝕或 濕法刻蚀。 當所述第二犧牲層120材料為鋁時，乾法刻蝕的具體步驟 為：將上述第二凹槽16底部露出第一犧牲層110的基底10 放置在一感應耦合電漿系統中，所述第二凹槽16底部的 第二犧牲層120由於沒有奈米壓印抗蝕劑的覆蓋，以氧氣 和氣氣為刻蝕氣體去除第二凹槽16底部的第二犧牲層120 ，從而露出第一犧牲層110。本實施例中，電漿系統的功 率係50瓦，氣氣的通入速率為24sccm，氧氣的通入速率 為24sccm，形成氣壓為2帕-10帕，採用氧氣和氣氣電漿 刻蝕時間為40秒〜55秒。 當所述第二犧牲層120的材料為鉻時，濕法刻蝕的具體步 驟為：取適量的濃度為0.06摩爾/升~0.25摩爾/升的鉻 腐蝕液KjFeCCN：^]，將基底10放入該鉻腐蝕液當中， 浸潰4分鐘~15分鐘。所述第二凹槽16底部的第二犧牲層 120由於沒有奈米壓印抗蝕劑的覆蓋，在該鉻腐蝕液的浸 潰下，第二凹槽16底部的第二犧牲層120被去除，從而露 098120561 表單編號A0101 第13頁/共26頁 0982035020-0 201100456 [0045] 出第一犧牲層11 〇。 再-人，去除第二凹槽16底部的第—犧牲層11()，露出基底 10 〇 [0046] [0047] [0048] 可以採用氧電漿去除第二凹槽16底部的第―犧牲層11〇， 從而露出基底10。氧電漿系統的功率係40瓦~60瓦，氧電 漿的通入迷率為4〇sccra，形成的氣壓為2帕〜1〇帕，採用 氧電漿刻蝕時間為30秒〜50秒。通過上述方法，第二凹槽 16底部的第一犧牲層110被去除，露出基底10。 取後，刻蝕第二凹槽1免寒部的基底10，並用有機溶劑去 除殘留的有機材料，從而獲得一具有奈來圖形的基底1〇{) Ο 丨:：；...Λ 將上述基底10放置在一感應耦合電漿系統中，此時第二 凹槽16底部的基底10沒有第一犧牲層丨丨的保護；以四氣 化梦和氯氣為刻姓乳體對基底1 α進行刻餘，第二凹槽1 6 底部的部分基底將被去除；用丙酮洗去殘留的有機殘留 物，該第一犧牲層110為有機物，從而被洗掉，覆蓋於第 一犧牲層110上的第二犧牲層120也被除去，從而獲得具 有奈米圖形的基底1〇〇 ^本實施例中，電漿系統的功率係 50瓦’氣氣的通入速率為2〇sccro〜60sccm，四氣化麥 的通入速率為20sccm〜60sccm，形成氣壓為4帕〜15帕， 刻蝕第二凹槽16底部的基底1〇。 [0049] 請參閱圖3及圖4，採用本發明的奈米壓印抗飾劑的奈米 壓印的方法的第二實施例，其包括以下步驟： [0050] 步驟一，提供一基底30，在該基底3〇的表面依次形成第 098120561 表單編號A0101 第14頁/共26頁 0982035020-0 201100456 一犧牲層310以及第二犧牲層“ο。 _]本實施例中，基底3Q的材料與第—實施中的基底1〇的材 料兀全相同，第—犧牲層310及第二犧牲層320的製作方 法、結構、材料以及位置關係分別與第二實施例中的第 一犧牲層110及第二犧牲層12〇的製作方法、結構、材料 以及位置關係完全相同。 [0052] 步驟二，提供一表面具有奈米圖形的模板6〇，在該模板 60具有奈米圖形的表面形成所述奈米壓印抗蝕劑33〇。 〇 [0053] 本實施例中，所述具有奈米圖形的模板6〇與第一實施例 中的模板20完全相同，該模挪的奈^鑛薄#多個第一 凹槽66以及第一凸部64構成壓印抗姓 劑33〇同第一實施例中採用的#1¾啣备蝕劑完全相同。 具體地，可以取一定量的奈米壓印抗蝕劑33()，緩慢滴在 所述模板60形成有奈米圖形的表面，於密閉的環境下靜 置 1 ~2個小時。 h':;f Ήf ；广； .. ..... '··' 〇 [0054]步驟三，將基底3〇f蕈於模板60，使所述基底30的第二 犧牲層320與所述模板60覆蓋有奈石壓印抗蝕劑33〇的表 面接觸，熱壓所述模板60及基底30，脫模。 [0055]具體地，將基底30覆蓋於模板60，使所述基底3〇的第二 犧牲層320與所述模板60覆蓋有奈米壓印抗蝕劑33〇的表 面接觸’並將所述覆蓋有基底30的模板60放置于壓印機 中；設置該壓印機的真空度為5. 〇xl(T3rabar，將基底30 以及模板60加熱至所述奈米壓印抗蝕劑330的玻璃化轉變 溫度（Tg)以上，使奈米壓印抗蝕劑330具有較好的流動 098120561 表單編號A0101 第15頁/共26頁 0982035020-0 201100456 性；第一次施加壓力為12Psi〜15Psi，保持5 ι〇分鐘， 使奈米壓印抗蝕劑330充滿模板6〇的奈米圖形中的凹槽 並粘附到基底30的第二犧牲層32〇表面；第二次施加壓力 35Psi ~60Psi，進行冷卻，待溫度降到所述奈米壓印抗 餘劑330的玻璃化轉變溫度（Tg)附近時，保持5~1〇分 鐘，再將溫度降至25°C〜5(TC，將模板60與基底30分離 ，從而在基體30的第二犧牲層320上形成一由奈米壓印抗 蝕劑3 3 0構成的奈米圖形。該由奈米壓印抗餘劑3 3 〇構成 的奈米圖形包括多個第二凹槽36以及第二凸部34。 [0056] 步驟四，通過刻蝕的方法，將所述奈米圖形轉移至基底 30，在所述基_底30表面形成..奈米圖形。 [0057] 首先，去除奈米壓印抗蝕劑330構成的奈米圖形凹槽36底 部殘留的奈米壓印抗蝕劑330 ’露出凹槽36底部的第二犧 牲層320。 [0058] 其次，刻蝕第二凹槽36底部的第二犧牲層320，露出第一 犧牲層310。 [0059] 再次，去除第二凹槽36底部的第一犧牲層310，露出基底 30 ° [0060] 最後’刻蝕第二凹槽36底部的基底30，並用有機溶劑去 除殘留的有機材料，從而獲得一具有奈米圖形的基底3〇〇 〇 [0061] 本實施例中，上述將所述奈米圖形轉移至基底30，在所 述基底30表面刻餘出条沭圖形的方法與第二實施中的方 法相同^ 098120561 表單編號A0101 第16買/共26頁 0982035020-0 201100456 [0062]與先前技術相比較，所述奈米壓印抗蝕劑及奈米壓印方 法具有以下優點：其一，該奈米壓印抗蝕劑包含高支化 低聚物，具有較低的玻璃化轉變溫度，熱壓過程可以在 小於75SC的溫度範圍内完成，所述高支化低聚物固化產 生交聯，提高了模量，且形變較小。其二，由於該奈米 壓印抗#劑加入了全氟基聚乙醚，全氟基聚乙醚為低表 面能材料，使得該奈米壓印抗蝕劑固化以後粘附性小， 在脫模過程中避免了奈米壓印抗蝕劑與模板粘連，從而 易於脫模，保證了圖形的完整性及解析度。其三，甲基 〇 丙烯酸甲酯及有機释釋劑進一步調節了該奈米壓印抗蝕 劑的粘滯性及流動性，使得該奈米壓印抗钱劑充分填充 到圖形中’減少了圖形缺陷的產生，保證了奈米壓印的 圖形的解析度和保真性。其四，本發明提供的奈米壓印 方法，其熱壓溫度低，模板無須預先處理，使得該方法 工藝簡單，成本低。 [0063] 綜上所述，本發明確已符合發明專利务要件，遂依法提 55 · ?,· 少、f.r 5 ·： i ' i- f ^ ύ Q 出專利申請。惟’以上所述者:m為本發:明之較佳實施例 ’自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化， 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0064] 圖1係本發明奈米壓印方法的第一實施例的流程圖。 [0065] 圖2係本發明奈米壓印方法的第一實施例的工藝流程示意 圖。 圖3係本發明奈米壓印方法的第二實施例的流程圖。 098120561 表單编號A0101 第Π頁/共26頁 0982035020-0 [0066] 201100456 [0067] 圖4係本發明奈米壓印方法的第二實施例的工藝流程示意 圖。 【主要元件符號說明】 [0068] 基底 10, 30 第一犧牲層 110,310 第二犧牲層 1 20, 320 壓印抗蚀劑層 130 模板 20, 60 第一凸部 24, 64 第一凹槽 26, 66 第二凸部 14, 34 第二凹槽 16, 36 奈米壓印抗餘劑 330 具有奈米圖形的基底 1 00, 300 098120561 表單編號A0101 第18頁/共26頁 0982035020-0[0044] The pressure is 2 Pa, and the oxygen plasma etching time is 5 seconds to 15 seconds. By the above method, the nanoimprint resist remaining at the bottom of the second recess 16 is removed, and the second sacrificial layer 120 is exposed. Next, the second sacrificial layer 120 at the bottom of the second recess 16 is etched to expose the first sacrificial layer 110. Depending on the material of the second sacrificial layer 120, dry etching or wet etching may be employed. When the material of the second sacrificial layer 120 is aluminum, dry etching is used; when the material of the second sacrificial layer 120 is chromium, dry etching or wet etching is used. When the material of the second sacrificial layer 120 is aluminum, the specific step of the dry etching is to place the substrate 10 at the bottom of the second recess 16 exposed to the first sacrificial layer 110 in an inductively coupled plasma system. The second sacrificial layer 120 at the bottom of the second recess 16 is covered with a nanoimprint resist, and the second sacrificial layer 120 at the bottom of the second recess 16 is removed by using oxygen and gas as an etching gas, thereby exposing the first A sacrificial layer 110. In this embodiment, the power of the plasma system is 50 watts, the gas gas inlet rate is 24 sccm, the oxygen gas inlet rate is 24 sccm, and the gas pressure is 2 Pa-10 Pa. The oxygen and gas plasma etching time is 40 seconds to 55 seconds. When the material of the second sacrificial layer 120 is chromium, the specific step of the wet etching is: taking an appropriate amount of a chromium etching solution KjFeCCN having a concentration of 0.06 mol/liter to 0.25 mol/liter, and placing the substrate 10 Into the chromium corrosion solution, dipping for 4 minutes to 15 minutes. The second sacrificial layer 120 at the bottom of the second recess 16 is covered by the nanoimprint resist, and the second sacrificial layer 120 at the bottom of the second recess 16 is removed under the impregnation of the chromium etching solution. , thus dew 098120561 Form No. A0101 Page 13 / Total 26 Page 0992035020-0 201100456 [0045] The first sacrificial layer 11 出. Re-man, removing the first sacrificial layer 11 () at the bottom of the second recess 16 to expose the substrate 10 00 [0048] [0048] The first sacrificial layer at the bottom of the second recess 16 may be removed by oxygen plasma 11〇, thereby exposing the substrate 10. The oxygen plasma system has a power of 40 watts to 60 watts, and the oxygen plasma has a pass rate of 4 〇sccra. The gas pressure is 2 kPa to 1 kPa, and the oxygen plasma etching time is 30 seconds to 50 seconds. By the above method, the first sacrificial layer 110 at the bottom of the second recess 16 is removed to expose the substrate 10. After the etch, the substrate 10 of the second recess 1 is etched away, and the residual organic material is removed with an organic solvent to obtain a substrate having a Nai pattern (1){) Ο 丨::; The substrate 10 is placed in an inductively coupled plasma system, in which case the substrate 10 at the bottom of the second recess 16 is not protected by the first sacrificial layer ;; the substrate 1 1 is treated with a gasification dream and chlorine gas as the surname a portion of the substrate at the bottom of the second recess 16 will be removed; the residual organic residue is washed away with acetone, and the first sacrificial layer 110 is organic, thereby being washed away, covering the first sacrificial layer 110. The second sacrificial layer 120 is also removed to obtain a substrate having a nano pattern. In this embodiment, the power system of the plasma system has a gas transmission rate of 50 watts of gas 〇sccro~60 sccm, and four gas. The penetration rate of the wheat is 20 sccm to 60 sccm, and the gas pressure is 4 Pa to 15 Pa, and the substrate 1 底部 at the bottom of the second groove 16 is etched. [0049] Referring to FIG. 3 and FIG. 4, a second embodiment of a method for nanoimprinting using the nanoimprinting anti-adhesive of the present invention comprises the following steps: [0050] Step one, providing a substrate 30 Forming 098120561 in sequence on the surface of the substrate 3〇 Form No. A0101 Page 14/26 pages 0992035020-0 201100456 A sacrificial layer 310 and a second sacrificial layer “ο. _] In this embodiment, the material of the substrate 3Q is The material of the substrate 1〇 in the first embodiment is the same, and the fabrication method, structure, material and positional relationship of the first sacrificial layer 310 and the second sacrificial layer 320 are respectively different from the first sacrificial layer 110 and the second embodiment. The fabrication method, structure, material and positional relationship of the two sacrificial layers 12 are exactly the same. [0052] Step 2, providing a template 6〇 having a surface on the surface of the template 60, and forming the surface on the surface of the template 60 having a nano pattern The embossed resist is 33 〇. [0053] In the embodiment, the template 6 具有 having a nano pattern is completely the same as the template 20 in the first embodiment, and the mold is negative. The first groove 66 and the first protrusion 64 constitute an imprint The anti-surname agent 33 is exactly the same as the #13⁄4 orientation etchant used in the first embodiment. Specifically, a certain amount of the nanoimprint resist 33 () may be taken, and the template 60 is slowly dropped. The surface of the nano-pattern is allowed to stand for 1 to 2 hours in a closed environment. h':;f Ήf ;wide; .. ..... '··' 〇[0054]Step 3, the substrate 3〇 The template 60 is placed such that the second sacrificial layer 320 of the substrate 30 is in contact with the surface of the template 60 covered with the nanoetching resist 33A, and the template 60 and the substrate 30 are hot pressed to release the mold. [0055] Specifically, the substrate 30 is covered on the template 60 such that the second sacrificial layer 320 of the substrate 3 is in contact with the surface of the template 60 covered with the nanoimprint resist 33A and the The template 60 covered with the substrate 30 is placed in the embossing machine; the vacuum of the embossing machine is set to 5. 3xl (T3rabar, the substrate 30 and the stencil 60 are heated to the glass of the nanoimprint resist 330 Above the transformation temperature (Tg), the nanoimprint resist 330 has a better flow 098120561 Form No. A0101 Page 15 / Total 26 Page 0992035020-0 201100456 Sex; First The secondary applied pressure is 12Psi~15Psi, and is kept for 5 〇min, so that the nanoimprint resist 330 fills the groove in the nano pattern of the template 6〇 and adheres to the surface of the second sacrificial layer 32 of the substrate 30; The second application pressure 35Ssi ~ 60Psi, cooling, until the temperature drops to the vicinity of the glass transition temperature (Tg) of the nanoimprint anti-residant 330, keep 5~1 〇 minutes, then reduce the temperature to 25 °C~5 (TC) separates the template 60 from the substrate 30, thereby forming a nano pattern composed of a nanoimprint resist 3300 on the second sacrificial layer 320 of the substrate 30. The nano pattern composed of the nanoimprinting anti-residue agent 3 3 包括 includes a plurality of second grooves 36 and second protrusions 34. [0056] Step 4, the nano pattern is transferred to the substrate 30 by etching, and a nano pattern is formed on the surface of the base 30. First, the nanoimprint resist 330 remaining at the bottom of the nano pattern recess 36 formed by the nanoimprint resist 330 is removed to expose the second sacrificial layer 320 at the bottom of the recess 36. [0058] Next, the second sacrificial layer 320 at the bottom of the second recess 36 is etched to expose the first sacrificial layer 310. [0059] again, the first sacrificial layer 310 at the bottom of the second recess 36 is removed to expose the substrate 30[0060] Finally, the substrate 30 at the bottom of the second recess 36 is etched, and the residual organic material is removed with an organic solvent, thereby Obtaining a substrate 3 having a nano pattern [0061] In the embodiment, the method of transferring the nano pattern to the substrate 30, and engraving the strip pattern on the surface of the substrate 30 and the second implementation The method is the same ^ 098120561 Form No. A0101 No. 16 Buy / Total 26 pages 0992035020-0 201100456 [0062] Compared with the prior art, the nanoimprint resist and the nano imprint method have the following advantages: The nanoimprint resist comprises a high-branched oligomer having a lower glass transition temperature, and the hot pressing process can be completed in a temperature range of less than 75 SC, and the high-branched oligomer is cured to produce a cross-linking The combination increases the modulus and the deformation is small. Secondly, since the nanoimprinting anti-agent is added with perfluoropolyether, the perfluoropolyether is a low surface energy material, so that the nanoimprint resist is cured after curing, and the mold release is small. In the process, the nanoimprint resist is prevented from sticking to the template, so that the mold is easily released, and the integrity and resolution of the pattern are ensured. Third, methyl hydrazine methyl acrylate and an organic release agent further adjust the viscosity and fluidity of the nanoimprint resist, so that the nanoimprint anti-money agent is sufficiently filled into the pattern. The generation of graphic defects ensures the resolution and fidelity of the nanoimprinted graphics. Fourthly, the nanoimprinting method provided by the invention has low hot pressing temperature and no pre-treatment of the template, so that the method is simple in process and low in cost. [0063] In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law, 55., less, f.r 5 ·: i ' i- f ^ ύ Q. However, the above mentioned: m is the preferred embodiment of the present invention: 'The patent application scope of this case cannot be limited. Equivalent modifications or variations made by those skilled in the art to the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0064] FIG. 1 is a flow chart showing a first embodiment of the nanoimprint method of the present invention. 2 is a schematic flow chart showing the first embodiment of the nanoimprint method of the present invention. Figure 3 is a flow chart of a second embodiment of the nanoimprint method of the present invention. 098120561 Form No. A0101 Page 26 of 26 0982035020-0 [0066] FIG. 4 is a schematic flow chart of a second embodiment of the nanoimprint method of the present invention. [Main Element Symbol Description] [0068] Substrate 10, 30 First Sacrificial Layer 110, 310 Second Sacrificial Layer 1 20, 320 Imprinted Resist Layer 130 Template 20, 60 First Protrusion 24, 64 First Groove 26, 66 second projection 14, 34 second recess 16, 36 nanoimprint anti-residue 330 base with nano graphics 1 00, 300 098120561 Form No. A0101 Page 18 of 26 0982035020-0