CN104178742B - 一种嵌入型金属/透明导电薄膜的制备方法 - Google Patents
一种嵌入型金属/透明导电薄膜的制备方法 Download PDFInfo
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- CN104178742B CN104178742B CN201410382611.7A CN201410382611A CN104178742B CN 104178742 B CN104178742 B CN 104178742B CN 201410382611 A CN201410382611 A CN 201410382611A CN 104178742 B CN104178742 B CN 104178742B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 51
- 239000002184 metal Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 67
- 239000010408 film Substances 0.000 claims abstract description 33
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000005542 laser surface treatment Methods 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
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CN201410382611.7A CN104178742B (zh) | 2014-08-05 | 2014-08-05 | 一种嵌入型金属/透明导电薄膜的制备方法 |
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CN201410382611.7A CN104178742B (zh) | 2014-08-05 | 2014-08-05 | 一种嵌入型金属/透明导电薄膜的制备方法 |
Publications (2)
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CN104178742A CN104178742A (zh) | 2014-12-03 |
CN104178742B true CN104178742B (zh) | 2016-08-24 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106624348B (zh) * | 2016-12-22 | 2018-10-09 | 江苏大学 | 一种fto薄膜表面选择性一步制备波纹结构的方法 |
CN108206070B (zh) * | 2017-06-23 | 2019-10-29 | 中国科学院福建物质结构研究所 | 一种透明导电薄膜及采用晶界印刷法制备该薄膜的方法 |
US12032124B2 (en) * | 2017-08-04 | 2024-07-09 | Vitro Flat Glass Llc | Flash annealing of transparent conductive oxide and semiconductor coatings |
CN107541700B (zh) * | 2017-08-15 | 2019-05-31 | 江苏大学 | 一种内嵌金属网格型透明导电薄膜的制备方法 |
CN108385072B (zh) * | 2018-01-18 | 2020-04-21 | 中国科学院宁波材料技术与工程研究所 | 一种具有单层结构的透明导电薄膜及其制备方法和应用 |
CN109878227B (zh) * | 2019-01-24 | 2020-09-25 | 江苏大学 | 一种提高tco薄膜综合光电特性的激光加工方法 |
CN110344010B (zh) * | 2019-07-09 | 2021-05-25 | 江苏大学 | 一种驱动层图案化银纳米颗粒复合fto薄膜的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101707229A (zh) * | 2009-11-25 | 2010-05-12 | 新奥光伏能源有限公司 | 一种降低硅基薄膜电池串联电阻的工艺 |
CN102581484A (zh) * | 2012-03-02 | 2012-07-18 | 江苏大学 | 一种利用超短脉冲激光制备硅基表面陷光结构的方法 |
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US20080223436A1 (en) * | 2007-03-15 | 2008-09-18 | Guardian Industries Corp. | Back reflector for use in photovoltaic device |
JP2012009600A (ja) * | 2010-06-24 | 2012-01-12 | Kaneka Corp | 薄膜太陽電池用基板の製造方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101707229A (zh) * | 2009-11-25 | 2010-05-12 | 新奥光伏能源有限公司 | 一种降低硅基薄膜电池串联电阻的工艺 |
CN102581484A (zh) * | 2012-03-02 | 2012-07-18 | 江苏大学 | 一种利用超短脉冲激光制备硅基表面陷光结构的方法 |
Non-Patent Citations (2)
Title |
---|
Improving Solar Cell Efficiency by Effective Light Management;Tobias Knüttel et al.;《Laser Technik Journal》;20130131;第1卷;第21-24页 * |
Optical enhancement and losses of pyramid textured thin-film silicon solar cells;Rahul Dewan et al.;《JOURNAL OF APPLIED PHYSICS》;20110705;第110卷;第013101-1-013101-10页 * |
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Application publication date: 20141203 Assignee: Dongtai tepusong Machinery Equipment Co.,Ltd. Assignor: Dongtai Chengdong science and Technology Pioneer Park Management Co.,Ltd. Contract record no.: X2023980043158 Denomination of invention: A Preparation Method for Embedded Metal/Transparent Conductive Thin Films Granted publication date: 20160824 License type: Common License Record date: 20231012 |
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