CN106981532A - 一种柔性cigs多晶薄膜太阳电池 - Google Patents

一种柔性cigs多晶薄膜太阳电池 Download PDF

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CN106981532A
CN106981532A CN201710091577.1A CN201710091577A CN106981532A CN 106981532 A CN106981532 A CN 106981532A CN 201710091577 A CN201710091577 A CN 201710091577A CN 106981532 A CN106981532 A CN 106981532A
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cigs
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李辉
屈飞
古宏伟
王文静
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Institute of Electrical Engineering of CAS
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Abstract

一种柔性CIGS多晶薄膜太阳电池,其结构中各层依次为:柔性云母衬底、金属Mo电极、CIGS光学吸收层、窗口层、高阻层、透明导电氧化物层;也可以为:柔性云母衬底、透明导电氧化物层、高阻层、窗口层、CIGS光学吸收层、Mo背接触层、金属导电层或者透明导电氧化物层。本发明的光学吸收层可以通过高温共蒸发也可以通过低温磁控溅射后硒化工艺制备,能与目前玻璃衬底上的刚性CIGS多晶薄膜太阳电池制备工艺兼容。本发明还可以制备成双面透光的柔性CIGS多晶薄膜太阳电池。

Description

一种柔性CIGS多晶薄膜太阳电池
技术领域
本发明涉及一种太阳电池。
背景技术
Cu(InxGa1-x)Se2(CIGS)多晶薄膜太阳电池具有吸收层材料的吸收系数高、性能稳定、抗辐射能力强、光电转换效率高和弱光效应好等特点。2016年,CIGS多晶薄膜太阳电池的实验室最高转化效率达到了22.6%。2016年,德国CIGS生产商Avancis宣布其在慕尼黑研发中心开发出的300mm×300mmCIGS小型薄膜太阳电池,光电转换率达到17.9%。可见,CIGS多晶薄膜太阳电池具有良好的应用前景。CIGS可以做在玻璃衬底上形成刚性CIGS多晶薄膜太阳电池,也可以做在柔性衬底比如不锈钢上形成柔性CIGS电池,如专利CN201210054329和CN201510795225。也可以在聚酰亚胺(PI)等衬底上形成柔性CIGS电池。柔性CIGS多晶薄膜太阳电池重量轻、可以折叠、弯曲、甚至黏贴在其它物体的表面例如汽车玻璃和衣服等,在建筑一体化光伏应用上也有很大的应用潜力。但是目前使用的PI和不锈钢柔性衬底具有一定的缺陷,比如PI长期使用温度范围在300℃以下,在共蒸发制备CIGS多晶薄膜过程中,要想获得高转化效率的CIGS多晶薄膜太阳电池,衬底的温度通常高于500℃,如果想在PI衬底上制备柔性CIGS多晶薄膜太阳电池,就需要低温的共蒸发工艺,这就限制了CIGS多晶薄膜太阳电池转化效率的提升。而由于不锈钢衬底不透光,以不锈钢为衬底的柔性CIGS多晶薄膜太阳电池只能做成下衬底结构,如专利CN201210054329,而且不锈钢衬底里面的Fe等元素会扩散到CIGS多晶薄膜中,从而影响CIGS多晶薄膜太阳电池转化效率的提升。为了提高转化效率,必须采用阻挡层,阻挡不锈钢衬底中的Fe等进入到CIGS中,如专利CN201210054329,或者采用多层Mo背电极,从而阻止衬底中的杂质元素对CIGS光学吸收层的影响,如专利CN201510795225,因此增加了工艺的复杂性。
发明内容
本发明的目的是克服现有柔性CIGS电池的以下缺点:金属衬底比如不锈钢衬底只能做成下衬底柔性CIGS结构,金属衬底中杂质对CIGS电池性能不利的影响,以及聚酰亚胺长期使用温度范围在300℃以下的缺点,提出一种新型柔性CIGS多晶薄膜太阳电池。本发明能采用高温制备,可以制备上衬底或者下衬底结构,还可以制备成双面透光的柔性电池,而且衬底不含金属杂质,无需阻挡层,简化了制备工艺。
本发明柔性CIGS多晶薄膜太阳电池可以为上衬底结构,也可以为下衬底结构。所述下衬底结构的柔性CIGS多晶薄膜太阳电池的结构如下:云母衬底上为金属Mo电极层,金属Mo电极层上为含碱金属的材料层,含碱金属的材料层上为CIGS吸收层,CIGS吸收层上为CdS窗口层或者其它类型窗口层,CdS窗口层或者其它类型窗口层上为ZnO高阻层或其它高阻层,ZnO高阻层或其它高阻层上为透明导电氧化物多晶薄膜层。所述上衬底结构的柔性CIGS多晶薄膜太阳电池的结构如下:云母衬底上为AZO透明导电氧化物薄膜层或其它透明导电氧化物层,AZO透明导电氧化物薄膜层或其它透明导电氧化物层上为ZnO高阻层或其它高阻层、ZnO高阻层或其它高阻层上为CdS窗口层或者其它类型窗口层,CdS窗口层或者其它类型窗口层上为CIGS吸收层,CIGS吸收层上为含碱金属的材料层,含碱金属的材料层上为Mo背接触层,Mo背接触层上为导电的透明氧化物多晶薄膜氧化物或者金属导电层。
本发明提出的柔性CIGS多晶薄膜太阳电池能与现有的玻璃衬底上的高温共蒸发工艺兼容,也可以采用低温制备方法比如磁控溅射制备,制备工艺简单,易大规模生产,在工业、航空航天及民用发电领域中都具有很大的应用潜力,还可以制备双面透光的柔性CIGS多晶薄膜太阳电池。
本发明以云母作为柔性CIGS多晶薄膜太阳电池的衬底,采用与玻璃衬底上的高温共蒸发或者其它低温磁控溅射相同的工艺,容易得到高效的CIGS多晶薄膜太阳电池,有效扩展了柔性CIGS多晶薄膜太阳电池的制备工艺。本发明的柔性CIGS多晶薄膜太阳电池还能制成上衬底结构,能拓宽柔性CIGS多晶薄膜太阳电池的制备工艺和应用范围。本发明提出的柔性CIGS多晶薄膜太阳电池可以制备双面透光的柔性CIGS多晶薄膜太阳电池。
附图说明
图1为本发明下衬底结构的柔性CIGS多晶薄膜太阳电池的结构示意图,图中:1云母衬底、2金属Mo电极、3含碱金属的材料层、4CIGS光学吸收层、5窗口层、6ZnO高阻层、7透明导电氧化物层;
图2为本发明上衬底结构的柔性CIGS多晶薄膜太阳电池的结构示意图,图中:1云母衬底、7透明导电氧化物层、6ZnO高阻层、5窗口层、4CIGS光学吸收层、3含碱金属的材料层、2金属Mo电极、8金属电极层;
图3为本发明双面透光的上衬底结构的柔性CIGS多晶薄膜太阳电池的结构示意图,图中:1云母衬底、2金属Mo电极、3含碱金属的材料层、4CIGS光学吸收层、5窗口层、6ZnO高阻层、7透明导电氧化物层。
具体实施方式
下面结合实施例对本发明做进一步说明。
实施例1
以50um厚、10×10cm的氟晶云母1为衬底,通过半导体工业标准的衬底清洗工艺清洗云母衬底1,通过溅射法直接在云母衬底1上制备金属Mo电极2,通过热蒸发工艺在镀有金属Mo电极2的云母衬底1上制备5nm厚的含碱金属的材料层3,采用与玻璃衬底上相同的高温三步共蒸发工艺,在镀有金属Mo电极2和含碱金属的材料层3的云母衬底1上生长CIGS光学吸收层4,通过化学水浴法(CBD)在镀有金属Mo电极2、含碱金属材料层3和CIGS光学吸收层4的云母衬底1上制备CdS窗口层5,通过磁控溅射在镀有金属Mo电极2、含碱金属的材料层3、CIGS光学吸收层4和CdS窗口层5的云母衬底1上制备ZnO高阻层6,通过磁控溅射在镀有金属Mo电极2、含碱金属的材料层3、CIGS吸收层4、CdS窗口层5和ZnO高阻层6的云母衬底1上制备AZO透明导电氧化物层7,至此得到本发明所述的下衬底结构的柔性CIGS多晶薄膜。
实施例2
本发明的柔性CIGS太阳电池不仅可以制备成下衬底结构,还可以制备成上衬底结构的CIGS太阳电池。以1mm厚、15×5cm的氟晶云母1为衬底,通过半导体工业标准的衬底清洗工艺对云母衬底1进行清洗,通过溅射法在云母衬底1上制备AZO透明导电氧化物层7,通过磁控溅射在镀有透明导电的AZO透明导电氧化物层7的云母衬底1上制备ZnO高阻层6,通过溅射法在镀有AZO透明导电氧化物层7、ZnO高阻层6的云母衬底1上制备ZnS窗口层5,通过三步共蒸发方法在镀有AZO透明导电氧化物层7、ZnO高阻层6、ZnS窗口层5的云母衬底1上制备CIGS光学吸收层4,通过热蒸发在镀有AZO透明导电氧化物层7、ZnO高阻层6、ZnS窗口层5、CIGS光学吸收层4的的云母衬底1上生长一层含碱金属的材料层3,然后进行高温处理,处理温度为300℃,时间为60min,气氛为真空气氛。通过热蒸发在高温处理后的镀有AZO透明导电氧化物层7、ZnO高阻层6、ZnS窗口层5、CIGS光学吸收层4的云母衬底1上生长金属Mo电极2,通过电子束蒸发在镀有AZO透明导电氧化物层7、ZnO高阻层6、ZnS窗口层5、CIGS光学吸收层4、金属Mo电极2的云母衬底1上生长Au金属导电层8,至此得到所述的上衬底的柔性CIGS多晶薄膜太阳电池。
实施例3
本发明上衬底结构的柔性CIGS太阳电池可以制备成双面透光的柔性CIGS太阳电池。以0.5μm厚、15×15cm的氟晶云母1为衬底,通过半导体工业标准的衬底清洗工艺对云母衬底1进行清洗,通过溅射方法在云母衬底1上制备掺锡的氧化铟(Sn:In2O3:ITO)透明导电氧化物层7,通过磁控溅射在镀有ITO透明导电氧化物层7的云母衬底1上制备ZnO高阻层高阻层6,通过CBD在镀有ITO透明导电氧化物层7、ZnO高阻层6的云母衬底1上制备CdS窗口层5,通过三步共蒸发方法在镀有ITO透明导电氧化物层7、ZnO高阻层6、CdS窗口层5的云母衬底1上制备CIGS光学吸收层4,通过热蒸发在镀有ITO透明导电氧化物层7、ZnO高阻层6、CdS窗口层5、CIGS光学吸收层4的云母衬底1上生长一层含碱金属的材料层3,然后进行高温处理,处理温度为500℃,时间为5min,气氛为真空气氛。通过热蒸发在高温处理后的镀有ITO透明导电氧化物层7、ZnO高阻层6、CdS窗口层5、CIGS光学吸收层4的云母衬底1上生长金属Mo电极2,通过磁控溅射方法在处理后的镀有ITO透明导电氧化物层7、ZnO高阻层6、CdS窗口层5、CIGS光学吸收层4、金属Mo电极2的云母衬底1上制备AZO透明导电氧化物层7,至此制备得到本发明所述的上衬底结构的具有双面透光的柔性CIGS多晶薄膜太阳电池。

Claims (5)

1.一种柔性CIGS多晶薄膜太阳电池,其特征在于:所述的柔性CIGS多晶薄膜太阳电池采用上衬底结构;所述上衬底结构的柔性CIGS多晶薄膜太阳电池的结构如下:云母衬底上为透明导电氧化物薄膜层,透明导电氧化物薄膜层上为高阻层、高阻层为窗口层,窗口层上为CIGS吸收层,CIGS吸收层上为含碱金属的材料层,含碱金属的材料层上为金属Mo背接触层,金属Mo背接触层上为导电的透明氧化物多晶薄膜氧化物或者金属层。
2.一种柔性CIGS多晶薄膜太阳电池,其特征在于:所述的柔性CIGS多晶薄膜太阳电池采用下衬底结构;所述下衬底结构的柔性CIGS多晶薄膜太阳电池的结构如下:云母衬底上为金属Mo电极层,金属Mo电极层上为含碱金属的材料层,含碱金属的材料层上为CIGS吸收层,CIGS吸收层上为窗口层,窗口层上为高阻层,高阻层上为透明导电氧化物多晶薄膜层。
3.根据权利要求1或2所述的柔性CIGS多晶薄膜太阳电池,其特征在于:所述的柔性CIGS多晶薄膜太阳电池能够制备成双面透光的柔性CIGS多晶薄膜太阳电池。
4.根据权利要求1或2所述的柔性CIGS多晶薄膜太阳电池,其特征在于:所述的云母衬底能够耐受1100℃。
5.根据权利要求1或2所述的柔性CIGS多晶薄膜太阳电池,其特征在于:所述的柔性CIGS多晶薄膜太阳电池采用与玻璃衬底兼容的高温共蒸发技术或采用低温磁控溅射后硒化技术制备。
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