CN104159872A - 接合体及半导体模块 - Google Patents

接合体及半导体模块 Download PDF

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Publication number
CN104159872A
CN104159872A CN201280060767.2A CN201280060767A CN104159872A CN 104159872 A CN104159872 A CN 104159872A CN 201280060767 A CN201280060767 A CN 201280060767A CN 104159872 A CN104159872 A CN 104159872A
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China
Prior art keywords
mass
glass
metal
bonding
bonding member
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CN201280060767.2A
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English (en)
Chinese (zh)
Inventor
泽井裕一
内藤孝
青柳拓也
藤枝正
森睦宏
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Hitachi Ltd
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Hitachi Ltd
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1432—Central processing unit [CPU]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles

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  • Engineering & Computer Science (AREA)
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  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Glass Compositions (AREA)
  • Ceramic Products (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)
CN201280060767.2A 2012-01-26 2012-11-21 接合体及半导体模块 Pending CN104159872A (zh)

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CN107683016A (zh) * 2017-11-21 2018-02-09 生益电子股份有限公司 一种快速散热pcb
CN109456076A (zh) * 2017-09-06 2019-03-12 阔斯泰公司 硅玻璃部件、其制造方法及陶瓷与硅玻璃的接合方法

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JP5844299B2 (ja) 2013-03-25 2016-01-13 株式会社日立製作所 接合材、接合構造体
CN105683111B (zh) * 2013-12-04 2018-09-14 株式会社日立制作所 密封结构体、及密封结构体的制造方法
WO2015098825A1 (ja) * 2013-12-25 2015-07-02 三菱マテリアル株式会社 パワーモジュール用基板、およびその製造方法、パワーモジュール
US10177069B2 (en) 2014-09-19 2019-01-08 Hitachi Ltd. Heat-dissipating structure and semiconductor module using same
CN107004643B (zh) * 2014-12-16 2019-07-30 京瓷株式会社 电路基板及电子装置
DE102015104518B3 (de) * 2015-03-25 2016-03-10 Infineon Technologies Ag Verfahren zur Herstellung einer Schaltungsträgeranordnung mit einem Träger, der eine durch ein Aluminium-Siliziumkarbid-Metallmatrixkompositmaterial gebildete Oberfläche aufweist
CN107408514B (zh) * 2015-04-09 2020-04-14 纳美仕有限公司 接合体的制造方法
CN108257929B (zh) * 2016-12-29 2020-06-19 比亚迪股份有限公司 一种散热基板及其制备方法和应用以及电子元器件
KR102217222B1 (ko) * 2019-01-30 2021-02-19 엘지전자 주식회사 무연계 저온 소성 글라스 프릿, 페이스트 및 이를 이용한 진공 유리 조립체
DE102023108698A1 (de) * 2023-04-05 2024-10-10 Danfoss Silicon Power Gmbh Baugruppe zur Bereitstellung elektronischer Funktionalitäten und Mittel zur Qualitätssicherung einer Fixierschicht davon

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CN106025054A (zh) * 2016-06-29 2016-10-12 海宁市智慧光电有限公司 一种高可靠性超亮片式led光源
CN109456076A (zh) * 2017-09-06 2019-03-12 阔斯泰公司 硅玻璃部件、其制造方法及陶瓷与硅玻璃的接合方法
CN107683016A (zh) * 2017-11-21 2018-02-09 生益电子股份有限公司 一种快速散热pcb

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US20150008573A1 (en) 2015-01-08
DE112012005758B4 (de) 2017-05-24
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