CN104136365B - 用于在集成板中嵌入受控腔mems封装的方法 - Google Patents

用于在集成板中嵌入受控腔mems封装的方法 Download PDF

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Publication number
CN104136365B
CN104136365B CN201380011132.8A CN201380011132A CN104136365B CN 104136365 B CN104136365 B CN 104136365B CN 201380011132 A CN201380011132 A CN 201380011132A CN 104136365 B CN104136365 B CN 104136365B
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China
Prior art keywords
mems
chip
cavity
metal film
plate
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CN201380011132.8A
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English (en)
Chinese (zh)
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CN104136365A (zh
Inventor
C·D·曼卡
F·斯特普尼克
S·K·科杜里
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Texas Instruments Inc
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Texas Instruments Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0207—Bolometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
CN201380011132.8A 2012-02-27 2013-02-27 用于在集成板中嵌入受控腔mems封装的方法 Active CN104136365B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/405,513 2012-02-27
US13/405,513 US8866237B2 (en) 2012-02-27 2012-02-27 Methods for embedding controlled-cavity MEMS package in integration board
PCT/US2013/027989 WO2013130582A1 (en) 2012-02-27 2013-02-27 Method for embedding controlled-cavity mems package in integration board

Publications (2)

Publication Number Publication Date
CN104136365A CN104136365A (zh) 2014-11-05
CN104136365B true CN104136365B (zh) 2016-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380011132.8A Active CN104136365B (zh) 2012-02-27 2013-02-27 用于在集成板中嵌入受控腔mems封装的方法

Country Status (4)

Country Link
US (2) US8866237B2 (enExample)
JP (1) JP6199322B2 (enExample)
CN (1) CN104136365B (enExample)
WO (1) WO2013130582A1 (enExample)

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US8809973B2 (en) * 2013-01-23 2014-08-19 Infineon Technologies Ag Chip package comprising a microphone structure and a method of manufacturing the same
KR101983142B1 (ko) * 2013-06-28 2019-08-28 삼성전기주식회사 반도체 패키지
DE102014105754B4 (de) * 2014-04-24 2022-02-10 USound GmbH Lautsprecheranordnung mit leiterplattenintegriertem ASIC
US10142718B2 (en) 2014-12-04 2018-11-27 Invensense, Inc. Integrated temperature sensor in microphone package
CN105845635B (zh) * 2015-01-16 2018-12-07 恒劲科技股份有限公司 电子封装结构
JP6398806B2 (ja) * 2015-03-12 2018-10-03 オムロン株式会社 センサパッケージ
US9663357B2 (en) * 2015-07-15 2017-05-30 Texas Instruments Incorporated Open cavity package using chip-embedding technology
KR20180082622A (ko) 2015-12-08 2018-07-18 스카이워크스 솔루션즈, 인코포레이티드 캐리어 웨이퍼를 사용하여 웨이퍼-레벨 칩-스케일 패키지에서 보호 캐비티 및 집적 패시브 컴포넌트들을 제공하는 방법
DE102016124270A1 (de) * 2016-12-13 2018-06-14 Infineon Technologies Ag Halbleiter-package und verfahren zum fertigen eines halbleiter-package
PL3363983T3 (pl) * 2017-02-17 2022-02-21 Vkr Holding A/S Izolowana próżniowo szyba zespolona
US10370244B2 (en) * 2017-11-30 2019-08-06 Infineon Technologies Ag Deposition of protective material at wafer level in front end for early stage particle and moisture protection
DE102018216433A1 (de) * 2018-09-26 2020-03-26 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Elektronikmoduls und Elektronikmodul
CN110010479B (zh) * 2018-10-10 2021-04-06 浙江集迈科微电子有限公司 一种射频芯片的Fan-out封装工艺
DE102019201228B4 (de) * 2019-01-31 2023-10-05 Robert Bosch Gmbh Verfahren zum Herstellen einer Mehrzahl von Sensoreinrichtungen und Sensoreinrichtung
JP7284606B2 (ja) * 2019-03-22 2023-05-31 新科實業有限公司 Ｍｅｍｓパッケージ、ｍｅｍｓマイクロフォンおよびｍｅｍｓパッケージの製造方法
CN111901731B (zh) * 2019-05-06 2022-01-07 奥音科技（北京）有限公司 电动声学换能器及其制造方法
US11289396B2 (en) * 2019-09-29 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Sensing component encapsulated by an encapsulation layer with a roughness surface having a hollow region
CN112073850B (zh) * 2020-08-27 2021-12-24 瑞声新能源发展(常州)有限公司科教城分公司 扬声器箱
US20220270960A1 (en) * 2021-02-23 2022-08-25 Texas Instruments Incorporated Open-Cavity Package for Chip Sensor
US20220415762A1 (en) * 2021-06-27 2022-12-29 Texas Instruments Incorporated Semiconductor package with drilled mold cavity
US12051655B2 (en) * 2021-07-16 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of forming the same
US20230183880A1 (en) * 2021-12-15 2023-06-15 Texas Instruments Incorporated Fluid sensor package
US12696791B2 (en) * 2022-02-09 2026-07-28 Texas Instruments Incorporated Sensor package with cavity created using sacrificial material
US12532775B2 (en) * 2022-02-18 2026-01-20 Micron Technology, Inc. Methods and assemblies for measurement and prediction of package and die strength

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US5818094A (en) * 1995-01-20 1998-10-06 Kyocera Corporation Package for housing a semiconductor element
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CN101786594A (zh) * 2009-01-06 2010-07-28 精材科技股份有限公司 电子元件封装体及其制作方法

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Also Published As

Publication number Publication date
US9321631B2 (en) 2016-04-26
US8866237B2 (en) 2014-10-21
WO2013130582A1 (en) 2013-09-06
US20150004739A1 (en) 2015-01-01
US20130221455A1 (en) 2013-08-29
CN104136365A (zh) 2014-11-05
JP2015517919A (ja) 2015-06-25
JP6199322B2 (ja) 2017-09-20

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