CN104112810A - Chip scale LED (light emitting diode) package structure - Google Patents
Chip scale LED (light emitting diode) package structure Download PDFInfo
- Publication number
- CN104112810A CN104112810A CN201410346105.2A CN201410346105A CN104112810A CN 104112810 A CN104112810 A CN 104112810A CN 201410346105 A CN201410346105 A CN 201410346105A CN 104112810 A CN104112810 A CN 104112810A
- Authority
- CN
- China
- Prior art keywords
- led
- chip scale
- adhesive body
- package
- package structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000084 colloidal system Substances 0.000 claims description 39
- 238000012856 packing Methods 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract 7
- 230000001070 adhesive effect Effects 0.000 abstract 7
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a chip scale LED package structure. The chip scale LED package structure comprises an LED chip with electrodes on the bottom surface, and a package adhesive body which packs the top surface and the side surfaces of the LED chip. At least one of the bottom and the side surface of the package adhesive body is provided with a reflect surface which is a reflective curved surface or a reflective flat surface extending from the bottom of the package adhesive body to the side surface of the package adhesive body. By arranging the reflective surfaces with high reflectivity on the bottom surface and/or the side surface of the package adhesive body, the chip scale LED package structure can effectively the deficiency that light is emitted out from the bottom or the side surface of the package adhesive body to result in ineffective light extraction, thereby improving the light extraction efficiency of products and reducing light losses; besides, by means of the reflective surfaces on the side surface and the bottom surface of the package adhesive body, the chip scale LED package structure can well control the light emitting angles of the products, facilitating formation of a single light exiting surface and further facilitating using compatibility of the products on different occasions. The chip scale LED package structure can be widely applied to manufacturing chip scale package LED products in the fields such as backlight and lighting.
Description
Technical field
The present invention relates to a kind of LED encapsulation technology, refer in particular to the encapsulating structure of a kind of wafer-level package LED.
Background technology
Traditional LED encapsulating structure all needs to adopt support or substrate as the prop carrier of LED chip, and support or substrate are provided with both positive and negative polarity, complete the electric connection of encapsulating products by the both positive and negative polarity of bonding chip; Then, then chip is encapsulated and obtain LED encapsulation product with the colloid of colloid or mixed fluorescent powder, support or substrate operated by rotary motion have reflection chamber or the substrate reflector with certain reflecting surface, can effectively improve the extraction yield of chip light-emitting.
And structure shown in Fig. 1 is the novel wafer-level package LED(CSP LED based on flip chip; Chip Scale Package LED), chip 1 bottom surface of this encapsulating structure is provided with electrode 2, directly in upper surface and the side of chip 1, encapsulate packing colloid 3, the electrode 2 of bottom surface is exposed, because this encapsulating structure there is no support or substrate, thermal resistance and the cost of encapsulating products can have been reduced, but, owing to having lacked support reverberation bowl cup structure or the substrate reflector with high reflecting effect, make the light extraction yield of this encapsulating structure lower than traditional LED encapsulating structure, this defect has also badly influenced cost performance and the application of CSP LED.
Summary of the invention
Embodiment of the present invention technical problem to be solved is, the encapsulating structure of a kind of wafer-level package LED is provided, and can effectively promote light extraction yield.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: the encapsulating structure of a kind of wafer-level package LED, comprise that bottom surface is provided with the LED chip of electrode and is packaged in the packing colloid of described LED chip end face and side, at least one position in the following position of described packing colloid is provided with reflecting surface: bottom and side.
Further, described reflecting surface is from the bottom of packing colloid, to extend to reflecting curved surface or the plane of reflection of side.
Further, described reflecting surface is by the reflecting surface that electroplate the outside wall surface corresponding position at packing colloid or spraying one deck high reflection layer forms.
Further, described packing colloid is transparent colloid, fluorescent material colloid mixture or spread powder colloid mixture.
The invention has the beneficial effects as follows: by the bottom surface at packing colloid and/or side, the reflecting surface with highly reflective energy is set, can effectively avoid light penetrate and cannot form the defect that efficient light extracts from bottom or the side of packing colloid, thereby light extraction efficiency that can improving product, reduces light loss; In addition, side and bottom design reflecting surface at packing colloid, also can regulate and control product rising angle well, contributes to form single exiting surface, thereby be more conducive to product in the use matching degree of different application occasion.The preparation of the wafer-level package LED products such as aspect such as that the present invention can be widely used in is backlight, illumination.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing wafer-level package LED encapsulating structure.
Fig. 2 is embodiment 1 structural representation of the encapsulating structure of wafer-level package LED of the present invention.
Fig. 3 is embodiment 2 structural representations of the encapsulating structure of wafer-level package LED of the present invention.
Fig. 4 is embodiment 3 structural representations of the encapsulating structure of wafer-level package LED of the present invention.
Fig. 5 is embodiment 4 structural representations of the encapsulating structure of wafer-level package LED of the present invention.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can mutually combine, and below in conjunction with the drawings and specific embodiments, the present invention are described in further detail.
The invention provides the encapsulating structure of a kind of wafer-level package LED, comprise LED chip 1 and be packaged in the packing colloid 3 of described LED chip 1 end face and side, the bottom surface of described LED chip 1 is provided with electrode 2, and at least one position in the following position of described packing colloid 3 is provided with reflecting surface: bottom and side.
Embodiment 1 as shown in Figure 2, is only provided with the first reflecting surface 40 in the bottom surface of described packing colloid 3.And in embodiment 2 as shown in Figure 3, be on the basis of embodiment 1, in the side of packing colloid 3, be also provided with the second reflecting surface 42.
In addition, described reflecting surface can also be also from the bottom of packing colloid 3, to extend to reflecting curved surface or the plane of reflection of side, for example: the embodiment 3 shown in Fig. 4 has adopted the design that extends to the reflecting curved surface 44 of side from the bottom of packing colloid 3, and the embodiment 4 shown in Fig. 5 has adopted the design that extends to the plane of reflection 46 of side from the bottom of packing colloid 3.
Particularly, described reflecting surface can be by the reflecting surface that electroplate the outside wall surface corresponding position at packing colloid 3 or spraying one deck high reflection layer forms.
Described packing colloid 3 can adopt the packing colloid of the various routines such as transparent colloid, fluorescent material colloid mixture or spread powder colloid mixture.
By the bottom surface at packing colloid 3 and/or side, the reflecting surface with highly reflective energy is set, can effectively avoid light penetrate and cannot form the defect that efficient light extracts from bottom or the side of packing colloid 3, thereby light extraction efficiency that can improving product, reduces light loss; In addition, side and bottom design reflecting surface at packing colloid 3, also can regulate and control product rising angle well, contributes to form single exiting surface, thereby be more conducive to product in the use matching degree of different application occasion.The preparation of the wafer-level package LED products such as aspect such as that the present invention can be widely used in is backlight, illumination.
The above is the specific embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (5)
1. the encapsulating structure of a wafer-level package LED, comprise that bottom surface is provided with the LED chip of electrode and is packaged in the packing colloid of described LED chip end face and side, it is characterized in that, at least one position in the following position of described packing colloid is provided with reflecting surface: bottom and side.
2. the encapsulating structure of wafer-level package LED according to claim 1, is characterized in that, described reflecting surface is from the bottom of packing colloid, to extend to reflecting curved surface or the plane of reflection of side.
3. the encapsulating structure of wafer-level package LED according to claim 1, is characterized in that, described reflecting surface is the plane of reflection that is arranged at respectively the bottom of packing colloid and side and is connected each other.
4. according to the encapsulating structure of the wafer-level package LED described in claim 1 or 2 or 3, it is characterized in that, described reflecting surface is by the reflecting surface that electroplate the outside wall surface corresponding position at packing colloid or spraying one deck high reflection layer forms.
5. the encapsulating structure of wafer-level package LED according to claim 1, is characterized in that, described packing colloid is transparent colloid, fluorescent material colloid mixture or spread powder colloid mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410346105.2A CN104112810A (en) | 2014-07-18 | 2014-07-18 | Chip scale LED (light emitting diode) package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410346105.2A CN104112810A (en) | 2014-07-18 | 2014-07-18 | Chip scale LED (light emitting diode) package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104112810A true CN104112810A (en) | 2014-10-22 |
Family
ID=51709529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410346105.2A Pending CN104112810A (en) | 2014-07-18 | 2014-07-18 | Chip scale LED (light emitting diode) package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104112810A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
| CN106486583A (en) * | 2015-08-28 | 2017-03-08 | 松下知识产权经营株式会社 | LED module and the light fixture with identical LED module |
| JP2017139456A (en) * | 2016-01-29 | 2017-08-10 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing light-emitting device |
| CN109075237A (en) * | 2016-04-13 | 2018-12-21 | 欧司朗光电半导体有限公司 | Device with reflector and the method for manufacturing device |
| CN109950379A (en) * | 2017-12-20 | 2019-06-28 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED of multifaceted light-emitting and preparation method thereof, backlight module |
| CN110021689A (en) * | 2019-04-28 | 2019-07-16 | 福建兆元光电有限公司 | Light emitting diode and its manufacturing method |
| JP2019121703A (en) * | 2018-01-09 | 2019-07-22 | スタンレー電気株式会社 | Light emitting device |
| CN110137162A (en) * | 2019-04-01 | 2019-08-16 | 深圳市瑞丰光电子股份有限公司 | A kind of LED product and preparation method thereof of adjustable light light shape out |
| US10573794B2 (en) | 2015-05-29 | 2020-02-25 | Hongli Zhihui Group Co.,Ltd. | Method of packaging CSP LED and CSP LED |
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| CN202888232U (en) * | 2012-10-15 | 2013-04-17 | 王向东 | Led light source module |
| CN103515520A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Light emitting diode encapsulating structure and manufacturing method thereof |
| CN103594463A (en) * | 2013-11-19 | 2014-02-19 | 长春希达电子技术有限公司 | Integrated LED displaying packaging module with LED chips arranged in wafers in inverted mode |
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| CN203553168U (en) * | 2013-11-19 | 2014-04-16 | 长春希达电子技术有限公司 | Wafer inverted integrated LED display package module |
| CN204289504U (en) * | 2014-07-18 | 2015-04-22 | 深圳市瑞丰光电子股份有限公司 | The encapsulating structure of wafer-level package LED |
-
2014
- 2014-07-18 CN CN201410346105.2A patent/CN104112810A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103515520A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Light emitting diode encapsulating structure and manufacturing method thereof |
| CN202888232U (en) * | 2012-10-15 | 2013-04-17 | 王向东 | Led light source module |
| CN103594463A (en) * | 2013-11-19 | 2014-02-19 | 长春希达电子技术有限公司 | Integrated LED displaying packaging module with LED chips arranged in wafers in inverted mode |
| CN203553168U (en) * | 2013-11-19 | 2014-04-16 | 长春希达电子技术有限公司 | Wafer inverted integrated LED display package module |
| CN103680340A (en) * | 2013-12-18 | 2014-03-26 | 长春希达电子技术有限公司 | Integrated LED display encapsulated module suitable for ultrahigh display density |
| CN204289504U (en) * | 2014-07-18 | 2015-04-22 | 深圳市瑞丰光电子股份有限公司 | The encapsulating structure of wafer-level package LED |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573794B2 (en) | 2015-05-29 | 2020-02-25 | Hongli Zhihui Group Co.,Ltd. | Method of packaging CSP LED and CSP LED |
| CN106486583A (en) * | 2015-08-28 | 2017-03-08 | 松下知识产权经营株式会社 | LED module and the light fixture with identical LED module |
| JP2017139456A (en) * | 2016-01-29 | 2017-08-10 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing light-emitting device |
| JP7177326B2 (en) | 2016-01-29 | 2022-11-24 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing light-emitting device |
| CN109075237A (en) * | 2016-04-13 | 2018-12-21 | 欧司朗光电半导体有限公司 | Device with reflector and the method for manufacturing device |
| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
| CN109950379A (en) * | 2017-12-20 | 2019-06-28 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED of multifaceted light-emitting and preparation method thereof, backlight module |
| JP2019121703A (en) * | 2018-01-09 | 2019-07-22 | スタンレー電気株式会社 | Light emitting device |
| JP7092506B2 (en) | 2018-01-09 | 2022-06-28 | スタンレー電気株式会社 | Light emitting device |
| CN110137162A (en) * | 2019-04-01 | 2019-08-16 | 深圳市瑞丰光电子股份有限公司 | A kind of LED product and preparation method thereof of adjustable light light shape out |
| CN110021689A (en) * | 2019-04-28 | 2019-07-16 | 福建兆元光电有限公司 | Light emitting diode and its manufacturing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141022 |
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| RJ01 | Rejection of invention patent application after publication |