CN103680340A - Integrated LED display encapsulated module suitable for ultrahigh display density - Google Patents
Integrated LED display encapsulated module suitable for ultrahigh display density Download PDFInfo
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- CN103680340A CN103680340A CN201310699575.2A CN201310699575A CN103680340A CN 103680340 A CN103680340 A CN 103680340A CN 201310699575 A CN201310699575 A CN 201310699575A CN 103680340 A CN103680340 A CN 103680340A
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- circuit board
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention relates to an integrated LED display encapsulated module suitable for ultrahigh display density. The integrated LED display encapsulated module comprises a driving IC, a driving circuit board and an LED wafer. The driving IC is welded to the reverse side of the driving circuit board. The LED wafer is fixed to the obverse side of the driving circuit board. LED light-emitting chips of at least two primary colors in the LED wafer are of a vertical single-electrode structure; bottom electrodes of the LED light-emitting chips of the vertical single-electrode structure are fixed to corresponding printed electrodes of the driving circuit board in a gluing mode through conducting elargol, and top electrodes of the LED light-emitting chips of the vertical single-electrode structure are connected with the corresponding printed electrodes of the driving circuit board through wires. According to the integrated LED display encapsulated module suitable for ultrahigh display density, at least two LED light-emitting chips are of the vertical single-electrode structure, the process is simple and mature, the number of welding spots are reduced, spatial size is reduced greatly, a part of a cumbersome wire bonding process is omitted while display density is enhanced, so that production time is shortened, and production cost is lowered.
Description
Technical field
The invention belongs to LED technical field of flat panel display, relate to a kind of integrated LED that is suitable for superelevation display density and show package module.
Background technology
Integrated LED display module comprises the LED display module consisting of drive IC, drive circuit board and red, green, blue three-primary color LED luminescence chip.Current common way is: drive IC is welded on to the drive circuit board back side; LED wafer is just being put the respective pixel position of the front surface that is fixed on drive circuit board by tackifier; mode with routing is solder-connected to the related circuit position of circuit board by indigo plant, the positive and negative electrode of green LED wafer and the positive electrode of red LED wafer (single electrode) by being connected wire (gold thread or aluminum steel) again, finally carries out sealing and face shield protection in the above.
In said structure, in unit picture element unit, need to weld 5 wires, and the corresponding solder joint of while layout, taken a large amount of bulk.Along with improving constantly of LED display picture element density, said structure form has become obstruction integrated LED display module display density and has increased principal element.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of integrated LED that is suitable for superelevation display density and shows package module, this demonstration package module not only can significantly reduce the bulk of unit picture element, improve display density, also have that production cost is low, the advantage such as rapid heat dissipation, light emission rate are high, good reliability simultaneously.
In order to solve the problems of the technologies described above, the integrated LED that is suitable for superelevation display density of the present invention shows that package module comprises drive IC, drive circuit board, LED wafer; Described drive IC is welded on the back side of drive circuit board, and LED wafer is fixed on the front of drive circuit board; The LED luminescence chip that it is characterized in that at least two primary colours in described LED wafer adopts vertical stagged electrode structure; Adopt the LED luminescence chip bottom electrode of vertical stagged electrode structure by conductive silver glue, to be adhesively fixed on the corresponding printed electrode of drive circuit board, top electrodes connects by wire printed electrode corresponding to drive circuit board.
Described LED wafer medium green, one of blue LED luminescence chip adopt vertical stagged electrode structure, and another adopts is inverted mounting structure; Adopt and be inverted mounting structure LED luminescence chip employing transparent substrates, chip positive pole is adhesively fixed by the printed electrode positive pole on conductive silver glue and drive circuit board, and negative pole is adhesively fixed by the printed electrode negative pole on conductive silver glue and drive circuit board; Red LED luminescence chip adopts vertical stagged electrode structure, and its bottom electrode is adhesively fixed with the corresponding printed electrode on drive circuit board by conductive silver glue, and top electrodes connects with the corresponding printed electrode on drive circuit board by wire.
The LED luminescence chip of the vertical stagged electrode structure of described employing adopts transparent substrates and transparent substrates to be positioned at the top of chip.
The LED luminescence chip of described inversion mounting structure adopts rectangle, widens two interelectrode distances in the situation that area is constant, is difficult for adhesion while putting conductive silver glue on printed electrode.
In the present invention, at least two LED luminescence chips adopt vertical stagged electrode structure, and technique is simple, ripe, has reduced solder joint, saved a large amount of bulk, when improving display density, saved the loaded down with trivial details bonding wire process of part, saved production time and cost.
Described LED wafer medium green, one of blue LED luminescence chip adopt vertical stagged electrode structure, and another adopts is inverted mounting structure.When improving display density, saved most of loaded down with trivial details bonding wire process, saved production time and cost; The LED luminescence chip back side of be inverted installing is the good sapphire substrates of light transmission, and chip is inverted, and the problem that is in the light of the electrode while having avoided just putting situation, has improved light emission rate; Chip electrode is connected with drive circuit board by conductive silver glue, has avoided connecting wire and has had the shortcoming that guide passage is long and cross-sectional area is too small, has accelerated radiating rate, and construction machine intensity has also obtained reinforcement.
The present invention can also comprise transparent enclosure colloid, and described transparent enclosure colloid is coated on LED wafer, forms convex dot shape luminophor.
The present invention can also comprise pitch-dark layer and transparency protected glue-line, and pitch-dark layer is sprayed at the surface of avoiding LED wafer on drive circuit board, and transparency protected glue-line is attached on LED wafer and drive circuit board.
The present invention can also comprise face shield and transparent casting glue body, and described face shield invests on drive circuit board, and its position corresponding to LED wafer is with light hole, and the embedding of transparent casting glue body is in the light hole of face shield.
The front of described face shield is black, and each light hole sidewall of face shield scribbles the high reflectance diffusive reflective film as high reflectance diffuse reflection surface; Prism film is pasted in the front of face shield and transparent casting glue body.
The light hole place, front of described drive circuit board is with silver-colored reflector layer.
The present invention can also comprise the printing opacity modification film being pasted on transparent enclosure colloid; It is grey that described printing opacity is modified film color, and transmittance is more than or equal to 60% and is less than or equal to 90%, and thickness is more than or equal to 0.5mm and is less than or equal to 2mm.
LED shows that in module, each concatenation module printing opacity modification film used is sheared and formed by one whole film mother metal, and after splicing, the surface smoothness of module integral body is high, colour consistency good.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is that a kind of integrated LED that is suitable for superelevation display density of the present invention shows the vertical stagged electrode structure LED of package module luminescence chip scheme of installation.
Fig. 2 is that a kind of integrated LED that is suitable for superelevation display density of the present invention shows the LED luminescence chip scheme of installation that package module inversion is installed.
Fig. 3 is that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 1 structural representation.
Fig. 4 is the pixel cell structure schematic diagram that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 1.
Fig. 5 is the structural representation that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 2.
Fig. 6 is the pixel cell structure schematic diagram that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 2.
Fig. 7 is the structural representation that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 3.
Fig. 8 is the unit picture element cellular construction schematic diagram that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 3.
Fig. 9 is the structural representation that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 4.
Figure 10 is the structural representation that a kind of integrated LED that is suitable for superelevation display density of the present invention shows package module embodiment 5.
Embodiment
As shown in Figure 1, in the present invention, the LED luminescence chip of vertical stagged electrode structure is arranged on drive circuit board 5, its bottom electrode is adhesively fixed on the corresponding printed electrode 51 of drive circuit board 5 and joins with turmeric line 52 by conductive silver glue 30, top electrodes connects with the turmeric wire bonding dish 56 on corresponding printed electrode 54 on drive circuit board 5 by wire.
As shown in Figure 2, the LED luminescence chip that the inversion in the present invention is installed adopts transparent substrates, and transparent substrates is printing opacity Sapphire Substrate substrate.LED luminescence chip positive pole is adhesively fixed and is joined with turmeric line 55 by conductive silver glue 31 and the printed electrode positive pole 54 on drive circuit board 5, and negative pole is adhesively fixed and is joined with turmeric line 52 by conductive silver glue 30 and the printed electrode negative pole 51 on drive circuit board 5.
As shown in Figure 3, the integrated LED that is suitable for superelevation display density of the present invention shows that package module comprises: drive IC 6, drive circuit board 5, LED wafer 1, face shield 4, transparent casting glue body 3, printing opacity are modified film 2 and formed.Dot spacing is d=1mm, and resolution is 64 * 64.Described drive IC 6 is welded on the back side of drive circuit board 5, and the light hole place, front of drive circuit board 5 is coated with silver-colored reflector layer, and LED wafer 1 is fixed on the front of drive circuit board 5; Face shield 4 has light hole corresponding to the position of LED wafer 1, and each LED wafer 1 embeds embedding to be had in the light hole of transparent casting glue body 3; The front of face shield 4 back sides and drive circuit board 5 is bonding compound by double faced adhesive tape, and the front of face shield 4 is black, and the other parts of face shield 4 can be black or other random color.Printing opacity is modified the front that film 2 is pasted on face shield 4.The color that printing opacity is modified film 2 is grey, and transmittance is 60%, and thickness is 0.5mm, and material is PC material.Printing opacity is modified film 2 outside surfaces and is processed through sub-light, has reduced mirror-reflection effect, and the space of improving display comparison degree and demonstration is bright, look distribution consistance.
As shown in Figure 4, green LED luminescence chip 12 adopts to be inverted and installs, and its positive and negative electrode is connected and fixes with corresponding printed electrode on drive circuit board 5 by conductive silver glue, and red LED luminescence chip 11, blue LED luminescence chip 13 adopt vertical stagged electrode structure; Bottom electrode is connected and fixes with corresponding printed electrode on drive circuit board 5 by conductive silver glue, and top electrodes is connected and fixes with the pad on corresponding printed electrode on drive circuit board 5 by wire.
As shown in Figure 5, the integrated LED that is suitable for superelevation display density of the present invention shows that package module comprises: drive IC 6, drive circuit board 5, LED wafer 1, pitch-dark layer 7, transparency protected glue-line 8, printing opacity are modified film 2 and formed.Dot spacing is d=1.5mm, and resolution is 64 * 64.Described drive IC 6 is welded on the back side of drive circuit board 5, and LED wafer 1 is fixed on the front of drive circuit board 5; The surface spraying that LED wafer 1 is avoided in drive circuit board 5 fronts has pitch-dark layer 7, and transparency protected glue-line 8 is attached to drive circuit board 5 fronts, and transparency protected glue-line 8 materials are other transparent adhesive tapes such as transparent epoxy insulating gel or silica gel.Printing opacity is modified film 2 and is pasted on the front surface of transparency protected glue-line 8.The color that described printing opacity is modified film 2 is grey, and transmittance is 70%, and thickness is 0.8mm, and material is PC material.Printing opacity is modified film 2 outside surfaces and is processed through sub-light, has reduced mirror-reflection effect, and the space of improving display comparison degree and demonstration is bright, look distribution consistance.
As shown in Figure 6, red, green, blue LED luminescence chip 11,12,13 all adopts vertical stagged electrode structure; Bottom electrode is connected and fixes with corresponding printed electrode on drive circuit board 5 by conductive silver glue, and top electrodes is connected and fixes with the pad on corresponding printed electrode on drive circuit board 5 by wire.
As shown in Figure 7, the integrated LED that is suitable for superelevation display density of the present invention shows that package module comprises: drive IC 6, drive circuit board 5, LED wafer 1, transparent enclosure colloid 9.Dot spacing is d=1mm, and resolution is 64 * 64.Described drive IC 6 is welded on the back side of drive circuit board 5, and LED wafer 1 is fixed on the front of drive circuit board 5; Transparent enclosure colloid 9 is covered on LED wafer 1 by spraying method, and due to natural tension force and the viscous force effect of liquid, transparent enclosure colloid 9 is convex dot shape.
As shown in Figure 8, blue led luminescence chip 13 adopts to be inverted and installs, and its positive and negative electrode is connected and fixes with corresponding printed electrode on drive circuit board 5 by conductive silver glue, and red LED luminescence chip 11, green LED luminescence chip 12 adopt vertical stagged electrode structure; Bottom electrode is connected and fixes with corresponding printed electrode on drive circuit board 5 by conductive silver glue, and top electrodes is connected and fixes with the pad on corresponding printed electrode on drive circuit board 5 by wire.
Dot spacing is d=1.875mm, the dot matrix that resolution the is 64X64 encapsulation and integration LED display module of arranging.
As shown in Figure 9, the integrated LED that is suitable for superelevation display density shows that package module comprises drive IC 6, drive circuit board 5, LED wafer 1, corresponding to LED wafer 1 position, has the face shield 4 of light hole; LED wafer 1 is fixed on drive circuit board 5 front surfaces; Drive IC 6 is fixed on the rear surface of drive circuit board 5, and drive IC 6 is directly connected with LED wafer 1 by drive circuit board 5; Positive LED wafer 1 place of described drive circuit board is with silver-colored reflector layer; Face shield 4 is selected the sheet material of FR-4 material, and its each light hole sidewall scribbles the high reflectance diffusive reflective film as high reflectance diffuse reflection surface 21; The back side of face shield 4 is bonding compound with the front surface of drive circuit board 5 by 3M double sticky tape 20; In the light hole of face shield 4, be filled with transparent casting glue body 3, transparent casting glue body 3 is epoxy resin; Prism film 22 is pasted in the front of face shield 4 and transparent casting glue body 3, the light shooting angle that act as the concrete user demand compression of basis display module of prism film 22, thus in watching angular field of view, increase luminance brightness.
The mounting means of red, green, blue LED luminescence chip can be identical with embodiment 1,2 or 3.
Dot spacing is d=1.875mm, the dot matrix that resolution is 64 * 64 High Density Integration LED display module of arranging.
As shown in figure 10, the integrated LED that is suitable for superelevation display density shows that package module comprises: drive IC 6, drive circuit board 5, LED wafer 1, face shield 4, light shield layer 24 and transparent casting glue body 3.Described LED wafer 1 is fixed on drive circuit board 5 front surfaces; Red LED luminescence chip is just being put installation; Drive IC 6 is fixed on the rear surface of drive circuit board 5, and drive IC 6 is directly connected with LED wafer 1 by drive circuit board 5.Face shield 4 is the transparent panel of PMMA material, and the position corresponding to LED wafer 1 on it has light hole, and LED wafer 1 is embedded in these light holes.Light shield layer 24 is black resin photomask, and black resin photomask is adhered between drive circuit board 5 and face shield 4.Transparent casting glue body 3 adopts ultra-violet curing glue, and the embedding of ultra-violet curing glue is in the light hole of face shield 4.
The mounting means of red, green, blue LED luminescence chip can be identical with embodiment 1,2 or 3.
The prompting of book and guidance according to the above description, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned embodiment.In addition, LED display module can also adopt other version arbitrarily.Therefore, the present invention is not limited to embodiment disclosed and described above, within also should belonging to the protection domain of claim of the present invention to modifications and changes more of the present invention.In addition,, although used some specific terms in this instructions, these terms just for convenience of description, do not form any restriction to the present invention.
Claims (10)
1. the integrated LED that is suitable for superelevation display density shows a package module, comprises drive IC (6), drive circuit board (5), LED wafer (1); Described drive IC (6) is welded on the back side of drive circuit board (5), and LED wafer (1) is fixed on the front of drive circuit board (5); The LED luminescence chip that it is characterized in that at least two primary colours in described LED wafer (1) adopts vertical stagged electrode structure; Adopt the LED luminescence chip bottom electrode of vertical stagged electrode structure by conductive silver glue, to be adhesively fixed on the corresponding printed electrode of drive circuit board, top electrodes connects by wire printed electrode corresponding to drive circuit board.
2. the integrated LED that is suitable for superelevation display density according to claim 1 shows package module, it is characterized in that described LED wafer (1) medium green, one of blue LED luminescence chip adopt vertical stagged electrode structure, and another adopts is inverted mounting structure; Adopt and be inverted mounting structure LED luminescence chip employing transparent substrates, chip positive pole is adhesively fixed by the printed electrode positive pole on conductive silver glue and drive circuit board, and negative pole is adhesively fixed by the printed electrode negative pole on conductive silver glue and drive circuit board; Red LED luminescence chip adopts vertical stagged electrode structure, and its bottom electrode is adhesively fixed with the corresponding printed electrode on drive circuit board by conductive silver glue, and top electrodes connects with the corresponding printed electrode on drive circuit board by wire.
3. the integrated LED that is suitable for superelevation display density according to claim 2 shows package module, it is characterized in that the LED luminescence chip of the vertical stagged electrode structure of described employing adopts transparent substrates and transparent substrates to be positioned at the top of chip.
4. the integrated LED that is suitable for superelevation display density according to claim 2 shows package module, it is characterized in that the LED luminescence chip of described inversion mounting structure adopts rectangle.
5. the integrated LED that is suitable for superelevation display density according to claim 1 shows package module, characterized by further comprising transparent enclosure colloid (9), and it is upper that described transparent enclosure colloid (9) is coated on LED wafer (1), forms convex dot shape luminophor.
6. the integrated LED that is suitable for superelevation display density according to claim 1 shows package module; characterized by further comprising pitch-dark layer (7) and transparency protected glue-line (8); pitch-dark layer (7) is sprayed at the surface of avoiding LED wafer (1) on drive circuit board (5), and transparency protected glue-line (8) is attached on LED wafer (1) and drive circuit board (5).
7. the integrated LED that is suitable for superelevation display density according to claim 1 shows package module, characterized by further comprising face shield (4) and transparent casting glue body (3), described face shield (4) invests on drive circuit board (5), and its position corresponding to LED wafer (1) is with light hole, and transparent casting glue body (3) embedding is in the light hole of face shield (4).
8. the integrated LED that is suitable for superelevation display density according to claim 7 shows package module, the front that it is characterized in that described face shield (4) is black, and each light hole sidewall of face shield (4) scribbles the high reflectance diffusive reflective film as high reflectance diffuse reflection surface (21); Prism film (22) is pasted in the front of face shield (4) and transparent casting glue body (3).
9. the integrated LED that is suitable for superelevation display density according to claim 7 shows package module, it is characterized in that the light hole place, front of described drive circuit board (5) is with silver-colored reflector layer.
10. according to the integrated LED that is suitable for superelevation display density described in claim 6 or 7, show package module, characterized by further comprising the printing opacity being pasted on transparent enclosure colloid and modify film; It is grey that described printing opacity is modified film color, and transmittance is more than or equal to 60% and is less than or equal to 90%, and thickness is more than or equal to 0.5mm and is less than or equal to 2mm.
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| CN201310699575.2A CN103680340A (en) | 2013-12-18 | 2013-12-18 | Integrated LED display encapsulated module suitable for ultrahigh display density |
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Cited By (9)
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| CN104112810A (en) * | 2014-07-18 | 2014-10-22 | 深圳市瑞丰光电子股份有限公司 | Chip scale LED (light emitting diode) package structure |
| WO2018077058A1 (en) * | 2016-10-27 | 2018-05-03 | 佛山市国星光电股份有限公司 | Cob display module and manufacturing method therefor, and led device and manufacturing method therefor |
| CN108461043A (en) * | 2018-02-01 | 2018-08-28 | 上海九山电子科技有限公司 | A kind of display panel and preparation method thereof |
| CN109243311A (en) * | 2018-09-28 | 2019-01-18 | 深圳市洁简达创新科技有限公司 | A kind of solid stacked package LED display module and three-dimensional stacking encapsulation method |
| CN109973838A (en) * | 2019-04-04 | 2019-07-05 | 固安翌光科技有限公司 | A kind of LED atmosphere lamp |
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