CN104112721A - 具有散热器的半导体功率设备 - Google Patents
具有散热器的半导体功率设备 Download PDFInfo
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- CN104112721A CN104112721A CN201410153242.4A CN201410153242A CN104112721A CN 104112721 A CN104112721 A CN 104112721A CN 201410153242 A CN201410153242 A CN 201410153242A CN 104112721 A CN104112721 A CN 104112721A
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- semiconductor
- metal derby
- power chip
- semiconductor power
- conductive carrier
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Classifications
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Abstract
一种半导体设备包括导电载体,所述导电载体具有安装表面。所述半导体设备进一步包括具有面向所述导电载体的第一表面和背向所述导电载体的第二表面的金属块。半导体功率芯片被布置在所述金属块的所述第二表面之上。
Description
技术领域
本发明涉及封装技术,并且尤其涉及对半导体功率芯片的封装技术。
背景技术
功率半导体设备制造商一直努力提高其产品的性能,同时降低其制造的成本。功率半导体设备的制造中成本密集的领域为对半导体功率芯片的封装。功率半导体设备的性能依赖于由封装提供的散热能力。以低花费提供小的高热鲁棒性的封装方法是合意的。
由于这些和其他原因,对于本发明有需求。
发明内容
根据半导体设备的实施例,所述半导体设备包括具有安装表面的导电载体,金属块和半导体功率芯片。金属块具有面向所述载体的第一表面和背向所述导电载体的第二表面。所述半导体功率芯片布置在所述金属块的所述第二表面之上。
根据半导体封装的实施例,所述半导体封装包括具有厚度T1的引线框架,金属块和半导体功率芯片。所述金属块安装在所述引线框架上。所述金属块具有厚度Tm,其中Tm等于或大于1.5T1。所述半导体功率芯片安装在所述金属块上。
根据制造半导体设备的方法的实施例,所述方法包括:将半导体功率芯片键合在金属块上;以及将所述金属块键合在导电载体上。
本领域技术人员将在阅读以下详细描述以及浏览附图之后认识到额外的特征和优势。
附图说明
附图被包括以提供实施例的进一步理解以及被并入该说明书中并组成该说明书的一部分。附图示出实施例,并与描述一同用于解释实施例的原理。其他实施例和实施例所意图的诸多优势将随着参考以下详细描述而变得更好了解而容易地加以理解。附图的元件并不一定相对于彼此按比例绘制。相似的附图标记代表对应的相似的部分。
图1示意性地图示了示例性功率半导体设备的横截面视图。
图2示意性地图示了示例性功率半导体设备的顶部视图。
图3示意性地图示了示例性功率半导体设备沿着图5中的A-A线的横截面视图,进一步图示了静态热功率耗散。
图4示意性地图示了示例性功率半导体设备沿着图5中的A-A线的横截面视图,进一步图示了动态热功率耗散。
图5示意性地图示了示例性功率半导体设备的顶部视图。
图6图示了半桥功率半导体设备的基本电路图。
图7A-7G示意性地图示了封装半导体功率芯片的方法的示例性工艺的横截面视图。
具体实施方式
在以下详细描述中参考附图,所述附图形成描述的一部分,并且通过图示在其中实施本发明的具体实施例而示出在附图中。就此而言,诸如“顶”、“底”、“前”、“后”、“上”、“下”等的方向性术语参考所描述的附图的朝向来使用。由于实施例的元件能够以数个不同的朝向来定位,所述方向性术语是用于图示的目的并不是进行限制。要理解的是,可以利用其他实施例而且结构或逻辑可以进行变化而并不脱离本发明的范围。因此,以下的详细描述并不以限制的意义来加以理解,并且本发明的范围由所附的权利要求书加以限定。
要理解的是,本文所描述的各种示例性实施例的特征可以彼此相互组合,除非具体地作出相反的注释。
如在本说明书中使用的,术语“耦合”和/或“连接”一般并不意味着元件必须直接耦合或者连接在一起。中间元件可以处于“耦合”或“连接”的元件之间。然而,虽然并不限于那种含义,术语“耦合”和/或“连接”还可以被理解为可选地公开了元件直接耦合或连接在一起而没有处于“耦合”或“连接”的元件之间的中间元件这一方面。
本文描述了包含半导体功率芯片的设备。尤其是,可以涉及一个或多个具有竖直结构的半导体功率芯片,即是说半导体功率芯片可以被以下述方式制作:即电流能够在垂直于半导体功率芯片的主表面的方向上流动。具有竖直结构的半导体功率芯片在其两个主表面上具有电极,即是说在其顶部侧上和底部侧上。在各种其他实施例中,可以涉及具有水平结构的半导体功率芯片。具有水平结构的半导体功率芯片仅在一个表面上具有电极,即是说在其顶部侧上。
半导体功率芯片可以由专门的半导体材料来制造,诸如举例来说,硅(Si)、碳化硅(SiC)、锗化硅(SiGe)、砷化镓(GaAs)、氮化硅(GaN)、铝镓氮(AlGaN)、铟镓砷(InGaAs)、铟铝砷(InAlAs)等,并且进一步地,可以包含不是半导体的无机和/或有机材料。半导体功率芯片可以是不同类型的,并且可以由不同的技术来制造。
进一步地,本文描述的电子设备可以可选地包括一个或多个逻辑集成电路以控制半导体功率芯片。逻辑集成电路可以包括一个或多个驱动器电路以驱动半导体功率芯片。逻辑集成电路可以为例如包括例如存储器电路,水平移位器等的微控制器。
半导体功率芯片可以具有允许与半导体功率芯片中所包含的集成电路进行电接触的电极(芯片焊垫)。电极可以包含一个或多个被施加到半导体功率芯片的半导体材料的金属层。金属层可以利用任意合意的几何形状和任意合意的合成材料来制造。金属层可以例如形式为覆盖区域的地(land)或层。作为示例,任意能够形成焊接键合或扩散焊键合的合意金属,例如铜(Cu)、镍(Ni)、镍-锡(NiSn)、金(Au)、银(Ag)、铂(Pt)、磷(Pd)、铟(In)、锡(Sn)、以及这些金属的一个或多个的合金可以被用作所述材料。金属层不需要是同质的,或者仅从一种金属制造,即是说包含在金属层中的材料的各种合成物和浓缩物都是可能的。
半导体功率芯片可以例如被配置为功率MISFET(金属绝缘体半导体场效应晶体管)、功率MOSFET(金属氧化物半导体场效应管)、IGBT(绝缘栅双极型晶体管)、JFET(结型栅场效应晶体管)、HEMT(高电子迁移率晶体管)、功率双极型晶体管或功率二极管诸如举例来说PIN二极管或肖特基二极管。作为示例,在竖直设备中,功率MISFET或功率MOSFET或HEMT的源极接触电极和栅极接触电极可以位于一个主表面上,而功率MISFET或功率MOSFET或HEMT的漏极接触电极可以被布置在另一个主表面上。然而,本文所考虑的半导体功率芯片,例如HEMT,还可以是具有仅布置在其上表面上的电极的水平设备。
半导体功率芯片被安装在导电载体之上。在各种实施例中,导电载体可以为诸如引线框架的晶片焊垫的金属板或薄片。金属板或薄片可以由任意金属或金属合金制成,例如,铜或铜合金。在其他实施例中,导电芯片载体可以由塑料或陶瓷制成。例如,导电芯片载体可以包括利用金属层涂覆的塑料层。作为示例,这样的芯片载体可以为单层PCB或多层PCB。在其他实施例中,设备载体可以包括利用金属层涂覆的陶瓷板,例如,金属键合陶瓷基板。作为示例,导电载体可以是DCB(直接铜键合的)陶瓷基板。
半导体功率芯片可以至少部分由至少一种电绝缘材料所围绕或嵌入在至少一种电绝缘材料中。电绝缘材料形成封入主体。封入主体可以包括模制材料或由模制材料制成。可以采用各种技术来形成模制材料的封入主体,例如压缩模制、注入模制、粉料模制或液体模制。进一步地,封入主体可以具有片层的形状,例如层压在半导体功率芯片和导电载体的顶部上的一片薄片或箔。封入主体可以形成封装的外围的一部分,即,可以至少部分限定了半导体设备的形状。
电绝缘材料可以包括热固材料或热塑材料,或者由热固材料或热塑材料制成。热固材料可以例如在环氧树脂的基础上制成。热塑材料可以例如包括聚对苯二甲酸乙二酯(PET)、聚醚砜(PES)、聚苯硫(PPS)或者聚酰胺(PAI)的组中的一种或多种材料。热塑材料通过在模制或层压期间应用压力和热而融化并且(可逆地)在冷却和压力解除之后硬化。
形成封入主体的电绝缘材料可以包括聚合物材料或者由聚合物材料制成。电绝缘材料可以包括经填充的或未经填充的模制材料、经填充的或未经填充的热塑材料、经填充的或未经填充的热固材料、经填充的或未经填充的层压物、经纤维强化的层压物、经纤维强化的聚合层压物、以及具有填料颗粒的经纤维强化的聚合层压物其中至少一种。
在某些实施例中,电绝缘材料可以为层压物,例如聚合物箔或薄片。可以施加热和压力合适的时间以将聚合物箔或薄片附接在下面的结构上。在层压期间,电绝缘箔或薄片能够流动(即为塑料状态),导致半导体功率芯片和/或芯片载体上的其他拓扑结构之间的间隙中填充了电绝缘箔或薄片的聚合物材料。电绝缘箔或薄片可以包括任意合适的热塑材料或热固材料,或由任意合适的热塑材料或热固材料制成。在一个实施例中,绝缘箔或薄片可以包括预浸渍(对于经预先浸渍的纤维的简称)或由其制成,即例如由纤维毡(例如玻璃纤维或碳纤维)和树脂的组合(例如热固材料或热塑材料)制成。预浸渍材料为本领域所知并且通常用于制作PCB(印刷电路板)。
金属块可以被放置在导电载体和半导体功率芯片之间。金属块可以机械地、热地、并且例如电气地连接到半导体功率芯片。金属块可以由任意金属或金属合金制成,尤其是具有高热传导性和/或高热容量的金属。作为示例,金属块可以包括铜或铜合金或者由铜或铜合金制成。金属块可以由块状金属材料制成。金属块可以允许具有高热量的功耗面密度的半导体功率芯片的热功耗的有效静态热耗散和有效动态热耗散两者。
诸如接触夹件的连接元件可以电气地和机械地连接到半导体功率芯片的负载电极,其被布置在与半导体功率芯片连接到金属块的表面相反的半导体功率芯片处。连接元件还可以为不是接触夹件的其他类型。其还可以例如由(多个)织带或(多个)键合接线进来实施。
各种不同类型的电子设备可以被配置为使用本文所描述的金属块,或者可以由本文所描述的技术来制造。作为示例,根据本公开的电子设备可以组成例如电源、DC-DC电压转换器、AC-DC电压转换器、功率放大器、以及许多其他功率设备。
在各种实施例中,本文所描述的电子设备可以例如包括在例如HEMT基础上的功率级联电路。这一级联电路在本领域内被称作HEMT级联。HEMT,尤其是HEMT级联可以例如基于氮化镓(GaN)、铝镓氮(AlGaN)、铟镓砷(InGaAs)、铟铝砷(InAlAs)。其可以例如被用于开关设备、AC-DC转换器、功率放大器、RF电路等。
装配有如本文所描述的金属块的功率半导体设备可以包含功率碳化硅MOSFET或功率碳化硅二极管作为半导体功率芯片。与HEMT相似,碳化硅-MOSFET和碳化硅二极管尺寸小而同时经历高热功耗。进一步地,包含高侧晶体管和低侧晶体管的半桥电路可以使用如本文所描述的金属块。半桥电路可以例如用作AC-DC转换器或DC-DC转换器。
总体上,DC-DC转换器可以用来将由电池或可充电电池提供的DC输入电压转换成与连接在下游的电子电路的需求相匹配的DC输出电压。作为示例,本文所描述的DC-DC转换器可以为降压转换器或向下转换器。AC-DC转换器可以用于将例如高电压AC电网所提供的AC输入电压转换成与连接在下游的电子电路的需求相匹配的DC输出电压。
总体上,包括具有高热功耗和相对小的占用面积以耗散热功率的半导体功率芯片的任意功率设备可以从本文的公开获得益处。作为示例,具有在操作中等于或大于例如1W、3W、7W、10W的热功耗以及例如用于热功率耗散的占用面积等于或小于15mm2、10mm2、7mm2、5mm2、3mm2的半导体功率芯片可以使用如本文所描述的金属块以用于改善操作期间的热行为和功率耗散。
图1图示了示例性半导体设备100的横截面视图。半导体设备100包括导电载体110,半导体功率芯片130和放置在导电载体110和半导体功率芯片130之间的金属块120。
导电载体110可以由扁平的金属板制成,例如引线框架的晶片焊垫。作为示例,导电载体110可以由整块金属材料制成。导电载体110的厚度由T1表示。厚度T1可以例如等于或大于0.1mm、0.3mm、0.5mm。厚度T1可以等于或小于0.7mm、0.5mm、0.4mm、0.2mm、0.1mm。
半导体功率芯片130可以例如为氮化镓(GaN)-HEMT、硅(Si)-或碳化硅(SiC)-功率MOSFET或-功率二极管。半导体功率芯片130在操作期间可能具有高的热量损耗,例如热功耗(热耗散)在1W和10W之间的范围内,或者甚至更高。半导体功率芯片130在操作期间产生的热功率必须被排出以避免半导体功率芯片130的过热、老化、或击穿。半导体功率芯片130可以被配置为操作在大于50V、100V、300V、500V、或1000V的电压处。半导体功率芯片130可以具有在半导体功率芯片130的第一表面131和相反的第二表面132之间所测量的厚度TC,所述厚度TC等于或小于300μm、200μm、100μm、80μm、或50μm。
金属块120具有面向导电载体110的第一表面121和背向导电载体130的第二表面122。半导体功率芯片130放置在金属块120的第二表面122之上。
金属块120具有由Tm表示的厚度。金属块120的厚度Tm在金属块120的第一表面121和第二表面122之间进行测量。厚度Tm可以等于或大于导电载体110的厚度T1的1.5、2.0、3.0、4.0、或5.0倍。作为示例,厚度Tm可以等于或大于0.5mm、0.75mm、1.0mm、1.25mm、或1.5mm。
金属块120的第一表面121可以具有等于或大于8.0mm2、14.0mm2、20.0mm2、或26.0mm2的面积大小。金属块120的第一表面121可以完全连接到导电载体110的上表面112。
半导体功率芯片130具有连接到金属块120的第二表面122的第一表面131。半导体功率芯片130的第一表面131可以例如由位于半导体功率芯片130的第一表面131上并面向金属块120的第二表面122的电极或金属涂层(图1未示出)的轮廓所限定。因而,半导体功率芯片130的第一表面131是半导体功率芯片130连接到金属块120的第二表面122的表面,并且凭借这一连接,第一表面131将热量从半导体功率芯片130有效传递到金属块120。在许多情况下,半导体功率芯片130的第一表面131可以对应于半导体功率芯片130的占用面积,或者可以具有与半导体功率芯片130的占用面积的面积大小相等或几乎同样大的大小。因此,如本文所使用的,半导体功率芯片130的第一表面131为对于将热量从半导体功率芯片130传递到金属块120的第一表面121有效的其表面。出于简化,在以下描述中,在半导体功率芯片130的占用面积表面和半导体功率芯片130的第一表面131之间不作区分。
如下文将更详细释出的,由金属块120的热移除效率依赖于金属块120的设计参数。尤其是,金属块120应当为热流扩大提供远离半导体功率芯片130的方向。即,从金属块120到导电载体110的热传递面积应当大于从半导体功率芯片130到金属块120的热传递面积。
作为示例,金属块120的第一表面121的面积大小可以等于或大于
4Tm·(Tm+Fc0.5)+Fc (1)
其中Fc为半导体功率芯片130的第一表面131的面积大小。
从半导体功率芯片130到金属块120的热传递面积与从金属块120到导电载体110的热传递面积的扩展由图1中的虚线所图示。要注意的是,式(1)可以例如对应于其中金属块120的第一表面121的横向尺寸Wb与半导体功率芯片130的第一表面131的横向尺寸Wc之间的差异至少为2Tm/3的两倍(如果,作为示例并且不丢失普遍性,假设平方热传递面积)的实施方式。在这一示例以及其他示例中,金属块120可以给出30度或更大的几何延展角α,所述几何延展角α处于将第一表面121和131的边缘进行连接的虚线和对应于热流的主方向的竖直方向之间。
进一步地,作为示例,金属块120的第一表面121的面积大小可以等于或大于
3Tm·(3Tm/4+Fc0.5)+Fc (2)
式(2)可以例如对应于其中金属块120的第一表面121的横向尺寸Wb与半导体功率芯片130的第一表面131的横向尺寸Wc之间的差异至少为金属块120的厚度Tm的两倍的实施方式。在这一示例以及其他示例中,金属块120可以给出45度或更大的几何延展角α,所述几何延展角α处于将第一表面121和131的边缘进行连接的虚线和对应于热流的主方向的竖直方向之间。作为示例,金属块120的横向尺寸Wb可以处于2×2mm和8×8mm之间的范围内,更具体地处于3.5×3.5mm和6.5×6.5mm之间的范围内。
金属块120可以由具有高热传导性的金属或金属合金制成。进一步地,金属块120可以由具有高热容量的金属制成。作为示例,金属块120可以包括铜或铜合金,或者由铜或铜合金制成。
参考图2,示出了功率半导体设备100的示例性顶部视图。作为示例,半导体功率芯片130可以具有矩形或方形的形状。相似地,金属块120可以例如具有矩形或方形的形状。在图2中所示的半导体功率芯片130的轮廓线对应于半导体功率芯片130的第一表面131的轮廓线,并且所示出的金属块120的轮廓线对应于金属块120的第一表面121。因此,所示出的轮廓线限定了从半导体功率芯片130到金属块120以及从金属块120到导电载体110的热传递的面积。如之前提及的,这些热传递面积的面积大小明显不同。作为示例,金属块120的第一表面121的面积大小与半导体功率芯片130的第一表面131的面积大小的比率可以等于或大于5.0、7.0、11.0、或13.0。
导电载体110还可以具有整体矩形或方形的形状。作为示例,导电载体110可以包括从导电载体110的外围突出的突起部113。如图2所示出,突起部113可以从由绝缘材料制成的封入主体210向外突出。封入主体210(其在图1中未示出)可以部分或完全将金属块120和放置其上的半导体功率芯片130嵌入。
图3图示半导体设备300。考虑导电载体110、金属块120和半导体功率芯片130,半导体设备300可以例如具有与半导体设备100相同的设计、规格和尺寸。进一步地,半导体设备300可以包括导电连接元件320,所述导电连接元件320具有连接到与半导体功率芯片130的第一表面131相反的半导体功率芯片130的第二表面132的第一表面321。在图2中连接元件320可以例如电气地和机械地连接到半导体功率芯片130的第二表面132处的电极(未示出)。连接元件320可以为接触夹件或用于将半导体功率芯片连接到封装的外部端子的其他器件,例如织带或多个键合接线。
连接元件320可以延伸超过半导体功率芯片130的轮廓线、超过金属块120的轮廓线、以及例如超过导电载体110的轮廓线至少一个横向尺寸。连接元件320可以具有可以被连接到接触焊垫330的弯曲部或突起部320a。接触焊垫330可以与导电载体110共面。进一步地,接触焊垫330可以例如由与导电载体110相同的材料制成。作为示例,接触焊垫330可以是导电载体110形成晶片焊垫的引线框架的引线。
半导体设备300可以进一步包括形成封入主体310(对应于图2的封入主体210)的电绝缘材料(例如模制材料)。封入主体310可以部分或完全将例如金属块120、例如半导体功率芯片130、以及例如连接元件320嵌入。
导电载体110的下表面114和接触焊垫330的下表面334可以暴露在半导体设备300的外围处。这些表面114、334可以形成半导体设备300的外部端子。因此,导电载体110的下表面114和接触焊垫330的下表面334可以被配置为连接到半导体设备300所安装到的应用板(未示出)。
半导体设备300可以包括诸如具有例如半蚀引线框架的QFN(四方扁平无引线)类型封装、或其他基于引线框架的封装类型的各种封装类型。半导体设备300可以包括如来自JEDEC(电子器件工程联合委员会)的放开标准所描画的封装,例如根据JEDEC MO-240的超级-SO8(Super-SO8),对应于封装的尺寸、引脚数等的特征通过引用并入本文。
图3还提供了半导体设备100形成半导体设备300的一部分的示例性、更详细的公开。如图3所示出的,第一键合层340可以位于导电载体110的上表面112和金属块120的第一表面121的附近,第二键合层350可以位于金属块120的第二表面122和半导体功率芯片130的第一表面131的附近,并且第三键合层360可以位于半导体功率芯片130的第二表面132和连接元件320的第一表面321的附近。
键合层340、350、360的每一个可以例如形成包括金锡(AuSn)、银锡(AgSn)、铜锡(CuSn)、银铟(AgIn)、金铟(AuIn)、金锗(AuGe)、铜铟(CuIn)、金硅(AuSi)、锡(Sn)或金(Au)。进一步地,软焊键合、硬焊键合、烧结金属键合和/或导电粘着键合可以被用于形成第一、第二或第三键合层340、350、360的一个或多个。
第一、第二和/或第三键合层340、350、360可以具有高导热性和/或小的厚度。作为示例,第一、第二和/或第三键合层340、350、360的厚度可以例如等于或小于10μm、5μm、2μm。厚度越小,在相应的键合层340、350、360上的热传输越好。
金属块120在其热效应方面的作用的模型将参考图3和4在以下进行解释。图3和4除了图3示意性地图示了静态热功率耗散而图4示意性地图示了动态热功率耗散之外彼此相同。
静态热功率耗散涉及半导体功率芯片130在操作期间所产生的平均热功率。这一热功率在半导体功率芯片130中持续地产生,并因此必须被持续地从半导体功率芯片130中传导出去。图3中的箭头图示了金属块120、导电载体110和连接元件320内的热流的主方向。在金属块120中热流的主方向在横向方向上以增加的距离远离半导体功率芯片130(或远离金属块120的第二表面122)进行扩大。即,由于金属块120的尺寸设计,允许热流在贯穿金属块120时进行扩大。作为热流的这一空间上的扩大的结果,大面积的热流接口得以出现在金属块120的第一表面121处。用于金属块120和导电载体110之间的热耗散的这一大尺寸传递面积允许持续而有效的热移除。换句话说,金属块120可以被视为成形以匹配实心主体中热流扩大的空间属性的“热流几何转换器”。
根据公开,用于相比于没有金属块120的常规实施方式而言实现相同的静态热功率耗散的导电载体110的厚度T1可能得以大幅降低。由于在功率应用中用于导电载体110(例如引线框架)的成本占用于封装的总成本的重要部分,通过提供金属块120允许减小厚度T1,而大幅降低了封装的总成本。
另外,考虑了动态热功率耗散。动态热功率耗散涉及半导体功率芯片130的热功率生成的波动。半导体功率芯片130所生成的热功率依据时间变化。依据时间的变化可以例如由半导体功率芯片130的依据时间的操作或连接到其的负载的依据时间的操作或两者而导致。
动态热功率耗散由紧密耦合到半导体功率芯片130的金属块120的热容量进行对抗。金属块120的高热容量提供短时间的热存储设施。将来自动态耗散的热存储在金属块120中提供了半导体功率芯片110的暂时冷却。换句话说,金属块120在半导体功率芯片130的热容量上增加了有效的热容量,其避免了对半导体功率芯片130造成过热的功耗峰值。
在图4中,从半导体功率芯片130指向金属块120的实心箭头图示了动态热功率耗散进入金属块120的容量。从半导体功率芯片130到连接元件320的较细实心箭头图示了动态热功率耗散进入连接元件320的容量。
连接元件320可以配备有突起部323,所述突起部323形成在连接元件320的第一表面321和连接元件320的第二、上表面322之间所测量的增大厚度的区域。突起部323还提供了热容量以用作半导体功率芯片130的依据时间操作期间的短时热存储设施。
总之,金属块120可以提供凭借横向热流扩大的增强的静态冷却以及通过耦合附加的热容量以用于缓冲由波动热功率耗散所引起的温度峰值而进行的增强短时冷却两者。
图5图示了示例性半导体设备300的顶部视图。A-A线为对应于例如图3和4的截面视图的截面线。图5与图2相似,并且参考相应的描述以避免重复。进一步地,图5图示了接触焊垫330,其可以被布置为沿着封入主体210的一侧的至少一部分。与导电载体110相似,接触焊垫330可以具有从封入主体210向外突出并暴露以形成例如半导体设备300的外部端子的突起部333。如图5所示,半导体功率芯片130可以通过连接元件320电气地连接到接触焊垫330。为了提供高导电性,连接元件320可以具有布置在半导体功率芯片130和接触焊垫330之间的宽度增加的部分320b。
进一步地,半导体设备300可以包括另一接触焊垫530。接触焊垫530可以电气地连接到电极,例如半导体功率芯片130的栅极电极。作为示例,键合接线(未示出)可以用于电气连接。
图6图示了作为示例的电源600的示例性电路,所述电源600使用布置在级联电路中的高功率晶体管T2和低电压晶体管T1。高功率晶体管T2可以例如为HEMT,例如氮化镓(GaN)-HEMT。氮化镓的临界场比硅中的大十倍,因此允许小尺寸而高功率/高电压的应用。进一步地,氮化镓提供低电荷、快速开关能力。诸如举例来说碳化硅的其他材料也具有比硅的临界场大得多的临界场,并且因此可能还要求在小面积热传递接口之上的大量热移除。低电压的晶体管T1可以例如为FET,例如为硅-MOSFET。
晶体管T1、T2可以为竖直或水平设备。电源600可以例如为AC-DC转换器。输出601处提供的DC电压可以例如等于或大于100V、200V、400V、600V等。端子602可以被连接到负向供电电压或地。在端子603处的例如0-5V的输入电压可以被用来操作晶体管T1的栅极。晶体管T2的栅极可以例如被连接到负向供电电压或地。电感604可以被连接在地和晶体管T1的源极端子之间、地和晶体管T2的栅极端子之间、晶体管T1的漏极和晶体管T2的源极之间、以及晶体管T2的漏极和输出601之间。
氮化镓-HEMT T2为常接通设备。然而,经由级联电路将低电压FET T1连接到氮化镓-HEMT T2的源极会将HEMT T2转变成常断开晶体管。
电源600可以由双芯片设备来实现。即,低电压FET T1可以由单个的半导体功率芯片来实施,并且高电压HEMT T2也可以由单个的半导体功率芯片130来实施,其可以例如根据本文的公开进行封装。
图7A-7G图示了作为示例的制造半导体功率设备700的示例性方法的各阶段。如图7G所示,半导体功率设备700与半导体功率设备100、300相似,并且参考本文的相应描述以避免重复。
图7A图示了提供导电载体110和接触焊垫330。如以上提及的,导电载体110和接触焊垫330可以分别具有彼此共面的下表面和/或上表面。
根据图7B,键合材料710可以被部署在导电载体110的上表面112上。键合材料710可以例如包括焊料、软焊料、扩散焊料、膏、纳米膏、或导电粘着剂,或由焊料、软焊料、扩散焊料、膏、纳米膏、或导电粘着剂组成。将键合材料710沉积在载体110上可以在批处理中实现,即,对于并行制造的多个半导体设备700而言。
更具体地,键合材料710可以例如由如以上记载的用于扩散焊的焊接材料,通过包含金属颗粒的膏剂来制成,所述金属颗粒分布在聚合物材料或诸如α-松油醇或其他材料的树脂中。包含在膏剂中的金属颗粒可以例如由银、金、铜、锡、或镍制成。金属颗粒的延展(平均直径)可以例如小于100nm并且尤其是小于50nm。这些膏剂在本领域中也被称为纳米膏。
如图7C所示,金属块120被放置在载体110之上的键合材料710中。在那时,半导体功率芯片130可能已经被安装在金属块120上,例如通过使用如上述的键合层。尤其是,可以使用提供在半导体功率芯片130和金属块120之间的紧密热耦合的扩散焊键合层。
参考图7D,键合材料710被部署在接触焊垫330的上表面335中。将键合材料710部署在上表面335中也可以在批处理中实现,即,对于并行制造的多个半导体设备700而言。
参考图7E,键合材料710被部署在半导体功率芯片130的第二表面132中。将键合材料710部署在第二表面132中也可以与图7D中所示的部署步骤一同实现。
参考图7F,连接元件320可以被放置在图7D和7E中所部署的键合材料710之上。将连接元件320放置在多个半导体功率芯片130和接触焊垫330之上可以在批处理中实现。
参考图7G,施加能量以回流、烧结、或固化键合材料710。能量可以通过热、辐射等进行施加。作为示例,热可以在烘箱中进行施加,例如回流烘箱。通过对键合材料710(例如焊料、金属膏剂、导电粘着剂)施加能量,将载体110的上表面112电气地和机械地连接到金属块120的第一表面121,将半导体功率芯片130的第二表面132电气地和机械地连接到连接元件320的下表面321,以及将接触焊垫330的上表面335电气地和机械地连接到连接元件320的突起部320a的下表面321。
如图7A-7G中所示的顺序处理阶段可以例如以不同的次序实现。作为示例,金属块120可以在图7C的步骤之后并在图7D的步骤之前被键合到导电载体110。根据另一种变化形式,半导体功率芯片130可以仅被放置在图7F中的金属块120上,而不是键合到金属块120。在这一情形中,一个单个的最终温度处理(例如回流步骤)可能就足以产生半导体设备700中所有的键合连接。
虽然本文已经图示并描述了具体的实施例,本领域技术人员将意识到多种可替换的和/或等同的实施方式可以替代所示出并描述出的具体实施例,而不会脱离本发明的范围。本申请旨在覆盖本文所讨论的具体实施例的任意适配形式或变化形式。因此,意图在于本发明仅由权利要求书和其等同形式来限制。
Claims (21)
1.一种半导体设备,包括
导电载体,具有安装表面;
金属块,具有面向所述载体的第一表面和背向所述导电载体的第二表面;以及
半导体功率芯片,被布置在所述金属块的所述第二表面之上。
2.根据权利要求1所述的半导体设备,进一步包括:
第一键合层,机械地并且电气地将所述导电载体的所述安装表面连接到所述金属块的所述第一表面。
3.根据权利要求2所述的半导体设备,其中所述第一键合层为扩散焊层、软焊层、烧结金属层、纳米膏层、或者传导粘着层。
4.根据权利要求1所述的半导体设备,进一步包括:
第二键合层,机械地并且电气地将所述金属块的所述第二表面连接到所述半导体功率芯片的第一表面。
5.根据权利要求4所述的半导体设备,其中所述第二键合层为扩散焊层、软焊层、烧结金属层、纳米膏层、或者传导粘着层。
6.根据权利要求1所述的半导体设备,其中所述金属块在所述金属块的所述第一表面和所述第二表面之间所测量的厚度等于或大于0.5mm、0.75mm、1.0mm、1.25mm、或者1.5mm。
7.根据权利要求1所述的半导体设备,其中所述金属块在所述金属块的所述第一表面和所述第二表面之间所测量的厚度等于或大于所述导电载体的厚度的1.5、2.0、3.0、4.0、或者5.0倍。
8.根据权利要求1所述的半导体设备,其中所述金属块的所述第一表面的面积大小等于或大于8.0mm2、14.0mm2、20.0mm2、或者26.0mm2。
9.根据权利要求1所述的半导体设备,其中连接到所述金属块的所述第二表面的所述半导体功率芯片的第一表面的面积大小等于或者小于10.0mm2、7.5mm2、5.0mm2、2.5mm2、或者1.0mm2。
10.根据权利要求1所述的半导体设备,其中所述金属块的所述第一表面的面积大小等于或大于3Tm·(3Tm/4+Fc0.5)+Fc,其中Tm为所述金属块的所述第一表面和所述第二表面之间所测量的所述金属块的厚度,并且Fc为连接到所述金属块的所述第二表面的所述半导体功率芯片的第一表面的面积大小。
11.根据权利要求1所述的半导体设备,其中所述金属块的所述第一表面的面积大小等于或大于4Tm·(Tm+Fc0.5)+Fc,其中Tm为所述金属块的所述第一表面和所述第二表面之间所测量的所述金属块的厚度,并且Fc为连接到所述金属块的所述第二表面的所述半导体功率芯片的第一表面的面积大小。
12.根据权利要求1所述的半导体设备,其中所述半导体功率芯片为竖直半导体功率芯片。
13.根据权利要求1所述的半导体设备,其中所述半导体功率芯片为氮化镓功率芯片、硅功率芯片、或者碳化硅功率芯片。
14.根据权利要求1所述的半导体设备,其中所述半导体功率芯片的热功率等于或大于3.0W、5.0W、7.0W、或者9.0W。
15.根据权利要求4所述的半导体设备,进一步包括:
连接元件,具有连接到所述半导体功率芯片的第二表面的第一表面,所述半导体功率芯片的第二表面与所述半导体功率芯片的所述第一表面相对。
16.根据权利要求15所述的半导体设备,其中所述连接元件为接触夹件。
17.根据权利要求1所述的半导体设备,其中所述半导体设备为AC-DC转换器或DC-DC转换器。
18.一种半导体封装,包括:
引线框架,具有厚度T1;
金属块,安装在所述引线框架上,所述金属块具有厚度Tm,其中Tm等于或大于1.5T1;以及
半导体功率芯片,安装在所述金属块上。
19.根据权利要求18所述的半导体封装,其中所述金属块具有所述半导体功率芯片在安装到所述引线框架的表面处的对应侧面尺寸的1.5倍的最小侧面尺寸。
20.一种制造半导体设备的方法,所述方法包括:
将半导体功率芯片键合在金属块上;以及
将所述金属块键合在导电载体上。
21.根据权利要求20所述的方法,进一步包括:
将第一键合材料沉积在所述导电载体上;
将所述金属块放置在所述第一键合材料上;
将第二键合材料沉积在所述半导体功率芯片上;
将接触夹件放置在所述第二键合材料上;以及
施加能量以将所述金属块安装到所述导电载体,并且将所述接触夹件安装到所述半导体功率芯片。
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