CN104111903B - 驱动器以及具有该驱动器的存储器控制器 - Google Patents

驱动器以及具有该驱动器的存储器控制器 Download PDF

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Publication number
CN104111903B
CN104111903B CN201410157570.1A CN201410157570A CN104111903B CN 104111903 B CN104111903 B CN 104111903B CN 201410157570 A CN201410157570 A CN 201410157570A CN 104111903 B CN104111903 B CN 104111903B
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China
Prior art keywords
node
signal
driver
pad
transmission method
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CN201410157570.1A
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Chinese (zh)
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CN104111903A (zh
Inventor
具京会
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to CN201811088092.8A priority Critical patent/CN109344102B/zh
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/40Bus structure
    • G06F13/4063Device-to-bus coupling
    • G06F13/4068Electrical coupling
    • G06F13/4072Drivers or receivers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/06Address interface arrangements, e.g. address buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
CN201410157570.1A 2013-04-22 2014-04-15 驱动器以及具有该驱动器的存储器控制器 Active CN104111903B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811088092.8A CN109344102B (zh) 2013-04-22 2014-04-15 驱动器以及具有该驱动器的存储器控制器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0044440 2013-04-22
KR1020130044440A KR102044478B1 (ko) 2013-04-22 2013-04-22 드라이버 및 이를 포함하는 메모리 컨트롤러

Related Child Applications (1)

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CN201811088092.8A Division CN109344102B (zh) 2013-04-22 2014-04-15 驱动器以及具有该驱动器的存储器控制器

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CN104111903A CN104111903A (zh) 2014-10-22
CN104111903B true CN104111903B (zh) 2018-11-02

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CN201410157570.1A Active CN104111903B (zh) 2013-04-22 2014-04-15 驱动器以及具有该驱动器的存储器控制器
CN201811088092.8A Active CN109344102B (zh) 2013-04-22 2014-04-15 驱动器以及具有该驱动器的存储器控制器

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Country Status (4)

Country Link
US (1) US9275707B2 (ko)
KR (1) KR102044478B1 (ko)
CN (2) CN104111903B (ko)
TW (1) TWI599886B (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155611B1 (ko) * 2014-02-28 2020-09-14 에스케이하이닉스 주식회사 데이터 저장 장치
US20180102160A1 (en) * 2016-10-07 2018-04-12 Kilopass Technology, Inc. DDR Controller for Thyristor Memory Cell Arrays
US10727833B1 (en) * 2019-01-18 2020-07-28 Qualcomm Incorporated High-voltage and low-voltage data paths of a hybrid output driver
US10707876B1 (en) 2019-01-18 2020-07-07 Qualcomm Incorporated High-voltage and low-voltage signaling output driver
TWI748231B (zh) 2019-08-21 2021-12-01 崛智科技有限公司 接收電路以及運作方法

Citations (2)

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US6157582A (en) * 1997-11-17 2000-12-05 Cypress Semiconductor Corporation Dynamic pull-up suppressor for column redundancy write schemes with redundant data lines
CN102893266A (zh) * 2010-04-13 2013-01-23 苹果公司 存储器控制器飞速映射

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US5959481A (en) * 1997-02-18 1999-09-28 Rambus Inc. Bus driver circuit including a slew rate indicator circuit having a one shot circuit
JP2000049585A (ja) * 1998-07-31 2000-02-18 Fujitsu Ltd 出力バッファ回路
TW588235B (en) * 2001-04-02 2004-05-21 Via Tech Inc Motherboard with less power consumption
US7397848B2 (en) * 2003-04-09 2008-07-08 Rambus Inc. Partial response receiver
US7102951B2 (en) * 2004-11-01 2006-09-05 Intel Corporation OTP antifuse cell and cell array
KR20080011974A (ko) * 2006-08-02 2008-02-11 삼성전자주식회사 반도체 메모리 장치의 출력 구동회로 및 출력 구동방법
JP4299857B2 (ja) * 2006-12-26 2009-07-22 エルピーダメモリ株式会社 昇圧型チャージポンプ回路
US7924863B2 (en) * 2007-01-10 2011-04-12 Etherntty Networks Ltd. Device and method for processing data chunks
TW200910373A (en) 2007-06-08 2009-03-01 Mosaid Technologies Inc Dynamic impedance control for input/output buffers
US7729168B2 (en) * 2007-06-28 2010-06-01 Intel Corporation Reduced signal level support for memory devices
US7898878B2 (en) 2007-08-02 2011-03-01 Rambus Inc. Methods and apparatus for strobe signaling and edge detection thereof
US7876123B2 (en) 2007-10-09 2011-01-25 Lsi Corporation High speed multiple memory interface I/O cell
US8023358B2 (en) * 2008-04-02 2011-09-20 International Business Machines Corporation System and method for providing a non-power-of-two burst length in a memory system
US8495310B2 (en) * 2008-09-22 2013-07-23 Qimonda Ag Method and system including plural memory controllers and a memory access control bus for accessing a memory device
KR101009348B1 (ko) 2009-07-01 2011-01-19 주식회사 하이닉스반도체 반도체 장치
CN101995912B (zh) * 2009-08-12 2014-01-15 鸿富锦精密工业(深圳)有限公司 内存信号阻抗匹配装置
US8149017B2 (en) 2010-06-25 2012-04-03 Xerox Corporation Low-voltage to high-voltage level translation using capacitive coupling
US8593902B2 (en) * 2011-09-06 2013-11-26 Mediatek Inc. Controller and access method for DDR PSRAM and operating method thereof
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CN202435378U (zh) * 2011-12-30 2012-09-12 无锡新硅微电子有限公司 具有过压、欠压和过流保护功能的总线接口输出级驱动电路

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Publication number Priority date Publication date Assignee Title
US6157582A (en) * 1997-11-17 2000-12-05 Cypress Semiconductor Corporation Dynamic pull-up suppressor for column redundancy write schemes with redundant data lines
CN102893266A (zh) * 2010-04-13 2013-01-23 苹果公司 存储器控制器飞速映射

Also Published As

Publication number Publication date
KR20140126197A (ko) 2014-10-30
CN104111903A (zh) 2014-10-22
CN109344102B (zh) 2022-08-09
KR102044478B1 (ko) 2019-11-13
CN109344102A (zh) 2019-02-15
US20140313846A1 (en) 2014-10-23
US9275707B2 (en) 2016-03-01
TW201441824A (zh) 2014-11-01
TWI599886B (zh) 2017-09-21

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