CN104081462B - 非易失性存储器装置及对此装置编程的方法 - Google Patents

非易失性存储器装置及对此装置编程的方法 Download PDF

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Publication number
CN104081462B
CN104081462B CN201280068501.2A CN201280068501A CN104081462B CN 104081462 B CN104081462 B CN 104081462B CN 201280068501 A CN201280068501 A CN 201280068501A CN 104081462 B CN104081462 B CN 104081462B
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China
Prior art keywords
memory cells
memory
programmed
unit
programming
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CN201280068501.2A
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Chinese (zh)
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CN104081462A (zh
Inventor
H.V.特兰
H.Q.阮
A.利
T.吴
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5647—Multilevel memory with bit inversion arrangement
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

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  • Read Only Memory (AREA)
CN201280068501.2A 2011-12-08 2012-11-13 非易失性存储器装置及对此装置编程的方法 Active CN104081462B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/315,213 US8804429B2 (en) 2011-12-08 2011-12-08 Non-volatile memory device and a method of programming such device
US13/315,213 2011-12-08
US13/315213 2011-12-08
PCT/US2012/064881 WO2013085676A1 (en) 2011-12-08 2012-11-13 A non-volatile memory device and a method of programming such device

Publications (2)

Publication Number Publication Date
CN104081462A CN104081462A (zh) 2014-10-01
CN104081462B true CN104081462B (zh) 2017-06-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280068501.2A Active CN104081462B (zh) 2011-12-08 2012-11-13 非易失性存储器装置及对此装置编程的方法

Country Status (7)

Country Link
US (2) US8804429B2 (enExample)
EP (1) EP2788987A4 (enExample)
JP (1) JP2015500546A (enExample)
KR (1) KR20140102733A (enExample)
CN (1) CN104081462B (enExample)
TW (1) TWI543156B (enExample)
WO (1) WO2013085676A1 (enExample)

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US9286982B2 (en) * 2014-08-08 2016-03-15 Silicon Storage Technology, Inc. Flash memory system with EEPROM functionality
US9922715B2 (en) * 2014-10-03 2018-03-20 Silicon Storage Technology, Inc. Non-volatile split gate memory device and a method of operating same
US10283207B2 (en) * 2016-06-03 2019-05-07 Samsung Electronics Co., Ltd. Non-volatile memory devices comprising high voltage generation circuits and operating methods thereof
KR102546306B1 (ko) * 2016-06-03 2023-06-23 삼성전자주식회사 고전압 발생 회로를 포함하는 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 동작 방법
US10534554B2 (en) * 2017-10-13 2020-01-14 Silicon Storage Technology, Inc. Anti-hacking mechanisms for flash memory device
US10861564B2 (en) 2018-10-17 2020-12-08 Winbond Electronics Corp. Memory circuit and data bit status detector thereof
US10937495B2 (en) 2019-07-02 2021-03-02 Winbond Electronics Corp. Resistive memory apparatus and method for writing data thereof
US10714157B1 (en) 2019-08-27 2020-07-14 Winbond Electronics Corp. Non-volatile memory and reset method thereof
CN112530494B (zh) * 2019-09-17 2024-06-25 硅存储技术股份有限公司 具有存储的索引信息的非易失性存储器设备
US11532354B2 (en) * 2020-03-22 2022-12-20 Silicon Storage Technology, Inc. Precision tuning of a page or word of non-volatile memory cells and associated high voltage circuits for an analog neural memory array in an artificial neural network
CN111785308B (zh) * 2020-06-10 2021-09-10 芯天下技术股份有限公司 减少非型闪存编程泵面积的方法、系统、储存介质和终端
CN114203242B (zh) * 2021-12-02 2024-11-29 普冉半导体(上海)股份有限公司 Nor型闪存编程电路

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US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
CN1377042A (zh) * 2001-03-23 2002-10-30 科统科技股份有限公司 可编程存储装置及编程方法
CN1577605A (zh) * 2003-07-11 2005-02-09 三星电子株式会社 包括已编程及可编程可擦除存储单元的集成电路存储器件

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US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
CN1377042A (zh) * 2001-03-23 2002-10-30 科统科技股份有限公司 可编程存储装置及编程方法
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
CN1577605A (zh) * 2003-07-11 2005-02-09 三星电子株式会社 包括已编程及可编程可擦除存储单元的集成电路存储器件

Also Published As

Publication number Publication date
JP2015500546A (ja) 2015-01-05
US8804429B2 (en) 2014-08-12
WO2013085676A1 (en) 2013-06-13
US20130148428A1 (en) 2013-06-13
TW201337922A (zh) 2013-09-16
US20150003166A1 (en) 2015-01-01
EP2788987A1 (en) 2014-10-15
KR20140102733A (ko) 2014-08-22
EP2788987A4 (en) 2015-07-29
TWI543156B (zh) 2016-07-21
US9646700B2 (en) 2017-05-09
CN104081462A (zh) 2014-10-01

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