CN104011881A - 混合型多晶硅异质结背接触电池 - Google Patents
混合型多晶硅异质结背接触电池 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 142
- 239000010703 silicon Substances 0.000 claims abstract description 142
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
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- 239000011248 coating agent Substances 0.000 claims description 57
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- 239000006117 anti-reflective coating Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 10
- 230000008025 crystallization Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 23
- 239000002184 metal Substances 0.000 abstract description 23
- 238000001465 metallisation Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 67
- 238000000151 deposition Methods 0.000 description 25
- 238000005516 engineering process Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明公开了一种用于制造高效率太阳能电池的方法。所述方法包括在硅基板的背面上设置薄介质层和掺杂多晶硅层。随后,可在所述硅基板的所述背面和正面上形成高质量氧化物层和宽带隙掺杂半导体层两者。然后可执行金属化工艺以穿过接触开口将金属指状物镀覆在所述掺杂多晶硅层上。所述镀覆的金属指状物可形成第一金属格栅线。可通过将金属直接镀覆在所述硅基板的所述背面上的发射体区来形成第二金属格栅线,从而消除了用于所述第二金属格栅线的接触开口的需要。在这些优点中,所述用于制造太阳能电池的方法为制造高效率太阳能电池提供了减少的热工艺、减少的蚀刻步骤、提高的效率和简化的工序。
Description
技术领域
本文所述主题的实施例一般地涉及太阳能电池制造。具体而言,所述主题的实施例涉及薄型硅太阳能电池和制造技术。
背景技术
太阳能电池是熟知的用于将太阳辐射转换成电能的装置。它们可以在半导体晶片上用半导体加工技术制造。太阳能电池包括P型和N型扩散区。冲击在太阳能电池上的太阳辐射产生迁移至扩散区的电子和空穴,从而在扩散区之间形成电压差。在背接触太阳能电池中,扩散区和与它们相连的金属触片均位于太阳能电池的背面上。触片允许将外部电路连接到太阳能电池上并由太阳能电池供电。
效率是太阳能电池的重要特性,因为其直接关系到太阳能电池的发电能力。因此,通常需要用于改进制造工艺、降低制造成本以及提高太阳能电池的效率的技术。此类技术包括通过热工艺在硅基板上形成多晶硅和异质结层,本发明以这种方式为提高太阳能电池的效率创造了条件。这些或其他类似的实施例形成本发明的背景技术。
附图说明
当结合以下附图考虑时,通过参见具体实施方式和权利要求书可以更完全地理解所述主题,其中在所有附图中,类似的附图标记是指类似的元件。
图1-12为根据本发明的实施例制造太阳能电池的剖面示图
图13-18为根据本发明的另一个实施例制造太阳能电池的剖面示图
具体实施方式
以下具体实施方式本质上只是例证性的,并非意图限制所述主题的实施例或此类实施例的应用和用途。如本文所用,词语“示例性的”是指“作为例子、实例或例证”。本文示例性描述的任何实施方式不一定被理解为比其他实施方式更优选或有利。此外,并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示的理论的约束。
公开了制造太阳能电池的方法。该方法包括:提供在背面具有薄介质层且在薄介质层上具有沉积硅层的硅基板;在沉积硅层上形成掺杂材料层;在掺杂材料层上形成氧化物层;按照叉指状图案部分地移除氧化物层、掺杂材料层和沉积硅层;生长氧化物层,与此同时升高温度以驱使来自掺杂材料层的掺杂物进入沉积硅层中;使沉积硅层被来自掺杂材料层的掺杂物掺杂以形成晶化掺杂多晶硅层;将宽带隙掺杂半导体和抗反射涂层沉积在太阳能电池的背面上;以及将宽带隙掺杂半导体和抗反射涂层沉积在太阳能电池的正面上。
公开了制造太阳能电池的另一个方法。该方法包括:提供在背面具有薄介质层且在薄介质层上具有沉积硅层的硅基板;在沉积硅层上形成掺杂材料层;在掺杂材料层上形成氧化物层;按照叉指状图案部分地移除氧化物层、掺杂材料层和沉积硅层;蚀刻露出的硅基板以形成纹理化硅区;生长氧化物层,与此同时升高温度以驱使来自掺杂材料层的掺杂物进入沉积硅层中;使沉积硅层被来自掺杂材料层的掺杂物掺杂而形成掺杂多晶硅层;将宽带隙掺杂非晶硅的第一厚层和抗反射涂层涂覆在太阳能电池的背面;将宽带隙掺杂非晶硅的第二薄层和抗反射涂层涂覆在太阳能电池的正面,并且其中薄层小于厚层厚度的10%至30%。
公开了制造太阳能电池的又一个方法。该方法包括:提供在背面具有薄介质层且在薄介质层上具有掺杂硅层的硅基板;在掺杂硅层上形成氧化物层;按照叉指状图案部分地移除氧化物层和掺杂硅层;通过在氧化环境中加热硅基板而在太阳能电池的背面上生长硅氧化物层,其中硅层被晶化而形成掺杂多晶硅层;将宽带隙掺杂半导体沉积在太阳能电池的背面上;以及将宽带隙掺杂半导体和抗反射涂层沉积在太阳能电池的正面上。
公开了制造太阳能电池的又一个方法。该方法包括:提供在背面具有薄介质层且在薄介质层上具有掺杂硅层的硅基板;在掺杂硅层上形成氧化物层;按照叉指状图案部分地移除氧化物层和掺杂硅层;蚀刻露出的硅基板以形成纹理化硅区;通过在氧化环境中加热硅基板而在太阳能电池的背面上生长硅氧化物层,其中硅层被晶化而形成掺杂多晶硅层;将宽带隙掺杂非晶硅和抗反射涂层沉积在太阳能电池的背面上;以及将宽带隙掺杂非晶硅和抗反射涂层沉积在太阳能电池的正面上。
公开了制造太阳能电池的方法的又一个实施例。该方法包括:提供在背面具有薄介质层且在薄介质层上具有掺杂硅层的硅基板;在掺杂硅层上形成氧化物层;按照叉指状图案部分地移除氧化物层和掺杂硅层;蚀刻露出的硅基板以形成纹理化硅区;通过在氧化环境中加热硅基板而在太阳能电池的背面上生长硅氧化物层,其中硅层被晶化而形成掺杂多晶硅层;同时将宽带隙掺杂非晶硅和抗反射涂层沉积在太阳能电池的正面和背面上;部分地移除宽带隙掺杂半导体和氧化物层以形成一系列接触开口;以及同时在太阳能电池背面上形成电耦合至掺杂多晶硅层的第一金属格栅和电耦合至发射体区的第二金属格栅。
用于制造太阳能电池的改进技术是在硅基板的背面上设置薄介质层和沉积硅层。掺杂多晶硅的区域可通过驱使掺杂物进入沉积硅层中或通过原位形成掺杂多晶硅区而形成。然后可在太阳能电池的正面和背面上形成氧化物层和宽带隙掺杂半导体层。一个变型涉及在氧化物形成和宽带隙掺杂半导体形成之前将正面和背面的表面纹理化。然后可穿过上部的层而形成接触孔以露出掺杂多晶硅区。然后可进行金属化工序以将触点形成在掺杂多晶硅层上。还可通过将金属直接连接至硅基板上的发射体区而形成第二组触点,所述发射体区通过设置在太阳能电池背面上的掺杂多晶硅的区域之间的宽带隙半导体层形成。
图1-18中示出了结合制造工艺执行的各种作业。另外,各种作业中的若干作业不一定按所示顺序来执行,并且可合并到具有本文未详述的附加功能的更综合性的工序、工艺或制造中。
图1-3示出了用于制造太阳能电池100的实施例,所述太阳能电池包括硅基板102、薄介质层106和沉积硅层104。在一些实施例中,可在形成薄介质层106之前清洁、抛光、平面化和/或减薄或以其他方式处理硅基板102。薄介质层106和沉积硅层104可经由热工序生长。可通过常规沉积工艺在沉积硅层104上沉积掺杂材料层108,然后是第一氧化物层110。掺杂材料层108可包含掺杂材料或掺杂物109,但不限于例如硼的正型掺杂材料层或者例如磷的负型掺杂材料层。虽然薄介质层106和沉积硅层104被描述为分别经由热工序生长或通过常规沉积工艺沉积,但就此处描述或列举的任何其他形成、沉积或生长工艺步骤而言,每个层或物质可使用任何适当的工艺形成。例如,凡是述及形成的地方,均可使用化学气相沉积(CVD)工艺、低压CVD(LPCVD)、常压CVD(APCVD)、等离子体增强CVD(PECVD)、热生长、溅射以及任何其他所需的技术。因此,并且类似地,可通过沉积技术、溅射、或印刷工艺例如喷墨打印或丝网印刷,在基板上形成掺杂材料108。
图4示出了在执行材料移除工艺而形成露出的多晶硅区124之后的始于图1-3的相同太阳能电池100。材料移除工艺的一些例子包括掩模和蚀刻工艺、激光烧蚀工艺以及其他类似技术。露出的多晶硅区124和掺杂材料层108可形成为任何所需形状,包括叉指状图案。在使用掩模工艺的情况下,可使用丝网印刷机或喷墨打印机执行,以按照预定的叉指状图案施加掩模墨(mask ink)。因此,可使用常规化学湿法蚀刻技术来移除掩模墨,产生露出的多晶硅区124和掺杂材料层108的叉指状图案。在至少一个实施例中,可移除第一氧化物层110的一些部分或全部。这可在移除沉积硅层104和介质层106的区域的相同蚀刻或烧蚀工艺中实现,如图4和5所示。
参见图5,太阳能电池100可进行第二蚀刻工艺,导致对露出的多晶硅区124进行蚀刻,以在太阳能电池的背面形成第一纹理化硅区130并在太阳能电池的正面形成第二纹理化硅区132,从而增强太阳辐射收集。纹理化表面可以为具有规则或不规则形状的表面,其用于散射入射光、减少从太阳能电池表面反射回的光量。
参见图6,可在140处加热太阳能电池100,以驱使来自掺杂材料层108的掺杂材料109进入沉积硅层104中。相同的加热140还可在掺杂材料层108和第一纹理化硅区130上形成硅氧化物或第二氧化物层112。在该工艺过程中,第三氧化物层114可在第二纹理化硅区132上生长。氧化物层112,114两者均可包含高质量氧化物。高质量氧化物是通常通过在大于900摄氏度的温度下热氧化生长的低界面态密度氧化物,其可为钝化改善创造条件。
参见图7,沉积硅层104可因此被来自掺杂材料层108的掺杂材料109掺杂而形成掺杂多晶硅层150。在一个实施例中,可通过如下方式实现形成掺杂多晶硅层:生长氧化物层,与此同时升高温度以驱使来自掺杂材料层108的掺杂物109进入沉积硅层104中,其中沉积硅层104被来自掺杂材料层108的掺杂物109掺杂,形成了晶化掺杂多晶硅层或掺杂多晶硅层150。在若干实施例之一中,若使用了正型掺杂材料,则掺杂多晶硅层150可包含正掺杂多晶硅层。在图示实施例中,硅基板102包括块状N型硅基板。在一些实施例中,如果使用了负型掺杂材料,则掺杂多晶硅层150可包含负掺杂多晶硅层。在一个实施例中,硅基板102应包括块状P型硅基板。
参见图8,可将第一宽带隙掺杂半导体层160沉积在太阳能电池100的背面上。在一个实施例中,第一宽带隙掺杂半导体层160为部分导电的,其电阻率为至少10Ω-cm。在相同的实施例中,其可具有在当前被第一纹理化硅区130和第二氧化物层112覆盖的太阳能电池背面区域中充当异质结的大于1.05电子伏特(eV)的带隙。宽带隙掺杂半导体的例子包括碳化硅和氮化铝镓。也可使用呈现出以上描述的性质和特征的任何其他宽带隙掺杂半导体材料。第一宽带隙掺杂半导体层160可由第一厚宽带隙掺杂非晶硅层构成。
参见图9,可将第二宽带隙掺杂半导体162沉积在太阳能电池100正面上的第二纹理化硅区132上。在一个实施例中,太阳能电池100背面和正面上的宽带隙掺杂半导体层160,162两者均可包含宽带隙负型掺杂半导体。在另一个实施例中,与第一厚宽带隙掺杂半导体层相比,第二宽带隙掺杂半导体162可相对较薄。因此,在一些实施例中,第二薄宽带隙掺杂半导体层可具有第一厚宽带隙掺杂半导体层厚度的10至30%。在又一个实施例中,分别位于太阳能电池背面和正面的宽带隙掺杂半导体层160,162两者均可包含宽带隙负型掺杂半导体或宽带隙正型掺杂半导体。随后,可按相同工艺将抗反射涂层(ARC)170沉积在第二宽带隙掺杂半导体162上。在另一个实施例中,可按相同工艺将抗反射涂层170沉积在第一宽带隙掺杂半导体160上。在一些实施例中,ARC170可由氮化硅构成。
图10示出了对太阳能电池100背面上的第一宽带隙掺杂半导体160、第二氧化物层112和掺杂材料层108进行的部分移除,所述部分移除用以形成一系列接触开口180。在一个实施例中,移除技术可用烧蚀工艺达成。一种这样的烧蚀工艺为激光烧蚀工艺。在另一个实施例中,移除技术可以为任何常规蚀刻工艺,例如掩模的丝网印刷或喷墨打印,然后续以蚀刻工艺。
参见图11,可在太阳能电池100的背面上形成第一金属格栅或格栅线190。第一金属格栅线190可电耦合至接触开口180内的掺杂多晶硅150。在一个实施例中,第一金属格栅线190可穿过第一宽带隙掺杂半导体160、第二氧化物层112和掺杂材料层108的接触开口180而形成,以连接由太阳能电池供电的外部电路的正极电端子。
参见图12,可在太阳能电池100的背面上形成第二金属格栅或格栅线192,所述第二金属格栅线192电耦合至第二纹理化硅区132。在一个实施例中,第二金属格栅线192可耦合至在太阳能电池背面区域中充当异质结的第一宽带隙掺杂半导体160、第二氧化物层112以及第一纹理化硅区130,以连接至由太阳能电池供电的外部电路的负极电端子。在一些实施例中,图11和12中涉及的金属格栅线的形成可通过电镀工艺、丝网印刷工艺、喷墨工艺、镀覆在由铝金属纳米颗粒形成的金属上、或任何其他金属化或金属形成工艺步骤来执行。
图13-18示出了制造太阳能电池200的另一个实施例。除非下文另外指明,否则用来指图13-18的组件的数字标记类似于用来指以上图1-12中的组件或结构的数字标记,不同的是标号增加了100。
参见图13-14,用于制造太阳能电池200的另一个实施例可包括在硅基板202上形成第一氧化物层210、薄介质层206、掺杂多晶硅层250。如上文类似讨论,可在形成薄介质层206之前清洁、抛光、平面化和/或减薄或以其他方式处理硅基板202。第一氧化物层210、介质层206和掺杂多晶硅层250可经由热工序生长。在一个实施例中,通过在氧化环境中加热硅基板202而在太阳能电池的背面上生长硅氧化物层或氧化物层210,其中掺杂硅层被晶化而形成掺杂多晶硅层250。在另一个实施例中,在介质层206上生长掺杂多晶硅层250包括生长正掺杂多晶硅,其中正掺杂多晶硅可由掺杂材料209例如硼掺杂物构成。在另一个实施例中,可使用负掺杂多晶硅。虽然薄介质层206和掺杂多晶硅层250被描述为分别经由热工序生长或通过常规沉积工艺沉积,但就此处描述或列举的任何其他形成、沉积或生长工艺步骤而言,每个层或物质可使用先前讨论的任何适当的工艺形成。
太阳能电池200可通过如下方式进一步处理:使用常规掩模和蚀刻工艺,部分地移除第一氧化物层210、掺杂多晶硅层250和介质层206以使硅基板的露出区域220以叉指状图案显现。在使用常规掩模和蚀刻工艺的情况下,可使用烧蚀工艺。如果使用了烧蚀工艺,第一氧化物层210可在掺杂多晶硅层250上保持部分完整,如图14所示。在另一个实施例中,丝网印刷或喷墨打印技术可结合蚀刻工艺使用。在这种实施例中,第一氧化物层210可从掺杂多晶硅层250蚀刻掉。
参见图15,太阳能电池200的露出的硅基板220和正面的露出区域可以被同时蚀刻,以形成第一纹理化硅表面230和第二纹理化硅表面232,从而增强太阳辐射收集。
参见图16,可在240处将太阳能电池200加热至大于900摄氏度的温度,同时在太阳能电池200背面上形成第二氧化物层212并在太阳能电池200正面上形成第三氧化物层214。在另一个实施例中,两个氧化物层212,214可由先前所讨论的高质量氧化物构成。
参见图17,可将第一宽带隙掺杂半导体层260同时沉积在太阳能电池的背面和正面上。第一宽带隙掺杂半导体层260可为部分导电的,其电阻率大于10Ω-cm。第一宽带隙掺杂半导体层260还可具有大于1.05eV的带隙。另外,第一宽带隙半导体层可在被第一纹理化硅区230和第二氧化物层212覆盖的太阳能电池背面区域中充当异质结。
第一宽带隙掺杂半导体层260可比第二宽带隙掺杂半导体层262厚10%至30%。在其他实施例中,该厚度可变化至低于10%或大于30%而不偏离本文所述的技术。宽带隙掺杂半导体层260,262两者均可为正掺杂半导体,但在具有不同基板和多晶硅掺杂极性的其他实施例中,也可使用负掺杂宽带隙半导体层。随后,可将抗反射涂层(ARC)270沉积在第二宽带隙掺杂半导体262上。在一个实施例中,抗反射涂层270可由氮化硅构成。在一些实施例中,也可将ARC沉积在第一宽带隙掺杂半导体层260上。
参见图18,可在掺杂多晶硅层250上部分地移除第一宽带隙掺杂半导体层260和第二氧化物层212以形成一系列接触开口,所述接触开口类似于以上结合图10-12所述的那些,并且形成技术类似于以上结合图10-12所述的那些。随后,可在太阳能电池200背面上形成第一金属格栅线290,其中所述第一金属格栅线290可电耦合至接触开口内的掺杂多晶硅250。可在太阳能电池200背面上形成第二金属格栅线292,所述第二金属格栅线292电耦合至第一纹理化硅区或N型发射体区230。在一个实施例中,可同时形成第一金属格栅线和第二金属格栅线。然后可通过组装了太阳能电池200的能源系统的其他组件,与第一金属格栅线290和第二金属格栅线292实现附加接触。
虽然前面的详细描述已展示至少一个示例性实施例,但应当理解,还存在大量的变型形式。还应当理解,本文所述的一个或多个示例性实施例并不旨在以任何方式限制要求保护的主题的范围、适用性或构型。相反,上述详细说明将为本领域的技术人员提供实施所述一个或多个实施例的方便的操作路径图。应当理解,可在不脱离权利要求书所限定的范围(其包括提交本专利申请时已知的等同物和可预知的等同物)的情况下对元件的功能和布置方式进行多种改变。
Claims (20)
1.一种用于制造包括硅基板的太阳能电池的方法,所述硅基板具有被构造为在正常工作过程中面向太阳的正面和与所述正面相对的背面,并且所述方法包括:
提供硅基板,所述硅基板在所述背面上具有薄介质层,并且在所述薄介质层上具有沉积硅层;
在所述沉积硅层上形成掺杂材料层;
在所述掺杂材料层上形成氧化物层;
按照叉指状图案部分地移除所述氧化物层、所述掺杂材料层和所述沉积硅层;
生长氧化物层,与此同时升高温度以驱使来自所述掺杂材料层的所述掺杂物进入所述沉积硅层中;
用来自所述掺杂材料层的掺杂物掺杂所述沉积硅层以形成晶化掺杂多晶硅层;
将宽带隙掺杂半导体和抗反射涂层沉积在所述太阳能电池的所述背面上;以及
将宽带隙掺杂半导体和抗反射涂层沉积在所述太阳能电池的所述正面上。
2.根据权利要求1所述的方法,其中提供所述硅基板包括提供具有N型块状硅的硅基板。
3.根据权利要求1所述的方法,其中提供所述硅基板包括提供具有P型块状硅的硅基板。
4.根据权利要求1所述的方法,其中在所述沉积硅层上形成掺杂材料层包括在所述沉积硅层上形成正型掺杂材料层。
5.根据权利要求1所述的方法,其中在所述沉积硅层上形成掺杂材料层包括在所述沉积硅层上形成负型掺杂材料层。
6.根据权利要求1所述的方法,其中沉积宽带隙掺杂半导体包括沉积宽带隙掺杂非晶硅。
7.根据权利要求1所述的方法,其中沉积宽带隙掺杂半导体包括沉积具有大于1.05电子伏特的带隙的半导体。
8.根据权利要求1所述的方法,其中按照叉指状图案部分地移除所述氧化物层、所述掺杂材料层和所述沉积硅层包括使用蚀刻工艺移除所述氧化物层、所述掺杂材料层和所述沉积硅层。
9.根据权利要求1所述的方法,其中按照叉指状图案部分地移除所述氧化物层、所述掺杂材料层和所述沉积硅层包括使用烧蚀工艺移除所述氧化物层、所述掺杂材料层和所述沉积硅层。
10.根据权利要求1所述的方法,其中所述将抗反射涂层沉积在所述太阳能电池的所述正面上包括沉积氮化硅。
11.一种用于制造包括硅基板的太阳能电池的方法,所述硅基板具有被构造为在正常工作过程中面向太阳的正面和与所述正面相对的背面,并且所述方法包括:
提供硅基板,所述硅基板在所述背面上具有薄介质层,并且在所述薄介质层上具有掺杂硅层;
在所述掺杂硅层上形成氧化物层;
按照叉指状图案部分地移除所述氧化物层和所述掺杂硅层;
蚀刻所露出的硅基板以形成纹理化硅区;
通过在氧化环境中加热所述硅基板而在所述太阳能电池的所述背面上生长硅氧化物层,其中所述掺杂硅层被晶化而形成掺杂多晶硅层;
同时将宽带隙掺杂非晶硅和抗反射涂层沉积在所述太阳能电池的所述正面和所述背面上;
部分地移除所述抗反射涂层、所述宽带隙掺杂非晶硅和所述氧化物层以形成一系列接触开口;以及
同时在所述太阳能电池的所述背面上形成第一金属格栅和第二金属格栅,所述第一金属格栅电耦合至所述掺杂多晶硅并且所述第二金属格栅电耦合至所述叉指状图案的一部分。
12.根据权利要求11所述的方法,其中所述掺杂多晶硅层包括负掺杂多晶硅层。
13.根据权利要求11所述的方法,其中所述掺杂多晶硅层包括正掺杂多晶硅层。
14.根据权利要求11所述的方法,其中将抗反射涂层沉积在所述太阳能电池的所述正面和所述背面上包括将氮化硅沉积在所述太阳能电池的所述背面和所述正面上。
15.一种用于制造包括硅基板的太阳能电池的方法,所述硅基板具有被构造为在正常工作过程中面向太阳的正面和与所述正面相对的背面,并且所述方法包括:
提供硅基板,所述硅基板在所述背面上具有薄介质层,并且在所述薄介质层上具有掺杂硅层;
在所述掺杂硅层上形成氧化物层;
按照叉指状图案部分地移除所述氧化物层和所述掺杂硅层;
蚀刻所露出的硅基板以形成纹理化硅区;
通过在氧化环境中加热所述硅基板而在所述太阳能电池的所述背面上生长硅氧化物层,其中所述硅层被晶化而形成掺杂多晶硅层;
将宽带隙掺杂非晶硅和抗反射涂层沉积在所述太阳能电池的所述背面上;以及
将宽带隙掺杂非晶硅和抗反射涂层沉积在所述太阳能电池的所述正面上。
16.根据权利要求15所述的方法,其中所述掺杂多晶硅层包含磷。
17.根据权利要求15所述的方法,其中所述掺杂多晶硅层包含硼。
18.一种用于制造包括硅基板的太阳能电池的方法,所述硅基板具有被构造为在正常工作过程中面向太阳的正面和与所述正面相对的背面,并且所述方法包括:
提供硅基板,所述硅基板在所述背面上具有薄介质层,并且在所述薄介质层上具有掺杂硅层;
在所述掺杂硅层上形成氧化物层;
按照叉指状图案部分地移除所述氧化物层和所述掺杂硅层;
通过在氧化环境中加热所述硅基板而在所述太阳能电池的所述背面上生长硅氧化物层,其中所述硅层被晶化而形成掺杂多晶硅层;
将宽带隙掺杂半导体沉积在所述太阳能电池的所述背面上;以及
将宽带隙掺杂半导体和抗反射涂层沉积在所述太阳能电池的所述正面上。
19.根据权利要求18所述的方法,其中提供所述硅基板包括提供具有N型块状硅的硅基板。
20.根据权利要求18所述的方法,其中提供所述硅基板包括提供具有P型块状硅的硅基板。
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JP2017228796A (ja) | 2017-12-28 |
JP6701295B2 (ja) | 2020-05-27 |
AU2017221854A1 (en) | 2017-09-21 |
KR20200039850A (ko) | 2020-04-16 |
TWI685984B (zh) | 2020-02-21 |
DE112012005381T5 (de) | 2014-09-04 |
JP6208682B2 (ja) | 2017-10-04 |
CN106252457A (zh) | 2016-12-21 |
KR101991791B1 (ko) | 2019-06-21 |
AU2015210421B9 (en) | 2017-11-09 |
KR20190073594A (ko) | 2019-06-26 |
JP2020129689A (ja) | 2020-08-27 |
TWI559563B (zh) | 2016-11-21 |
JP2019024107A (ja) | 2019-02-14 |
CN106252457B (zh) | 2018-10-12 |
AU2020200717A1 (en) | 2020-02-20 |
JP2015505167A (ja) | 2015-02-16 |
TW201344931A (zh) | 2013-11-01 |
KR102223562B1 (ko) | 2021-03-04 |
AU2012358982A1 (en) | 2014-07-03 |
AU2015210421B2 (en) | 2017-06-01 |
WO2013096500A1 (en) | 2013-06-27 |
JP6411604B2 (ja) | 2018-10-24 |
TW201707224A (zh) | 2017-02-16 |
KR20140106701A (ko) | 2014-09-03 |
AU2015210421A1 (en) | 2015-09-03 |
AU2012358982B2 (en) | 2015-05-07 |
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KR102101408B1 (ko) | 2020-04-17 |
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