DE112012005381T5 - Hybride Polysilizium-Heteroübergangs-Rückseitenkontaktzelle - Google Patents
Hybride Polysilizium-Heteroübergangs-Rückseitenkontaktzelle Download PDFInfo
- Publication number
- DE112012005381T5 DE112012005381T5 DE112012005381.8T DE112012005381T DE112012005381T5 DE 112012005381 T5 DE112012005381 T5 DE 112012005381T5 DE 112012005381 T DE112012005381 T DE 112012005381T DE 112012005381 T5 DE112012005381 T5 DE 112012005381T5
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- Prior art keywords
- layer
- silicon
- doped
- solar cell
- silicon substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 53
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 132
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- 239000010703 silicon Substances 0.000 claims abstract description 132
- 238000000034 method Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 238000002679 ablation Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 238000001465 metallisation Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/333,904 | 2011-12-21 | ||
US13/333,904 US8597970B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,908 US8679889B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,908 | 2011-12-21 | ||
PCT/US2012/070709 WO2013096500A1 (en) | 2011-12-21 | 2012-12-19 | Hybrid polysilicon heterojunction back contact cell |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112012005381T5 true DE112012005381T5 (de) | 2014-09-04 |
Family
ID=48669465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112012005381.8T Pending DE112012005381T5 (de) | 2011-12-21 | 2012-12-19 | Hybride Polysilizium-Heteroübergangs-Rückseitenkontaktzelle |
Country Status (7)
Country | Link |
---|---|
JP (4) | JP6208682B2 (zh) |
KR (3) | KR102223562B1 (zh) |
CN (2) | CN104011881B (zh) |
AU (4) | AU2012358982B2 (zh) |
DE (1) | DE112012005381T5 (zh) |
TW (2) | TWI559563B (zh) |
WO (1) | WO2013096500A1 (zh) |
Families Citing this family (26)
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US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
CN103594541B (zh) * | 2013-10-12 | 2017-01-04 | 南昌大学 | 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法 |
US9196758B2 (en) | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015122242A1 (ja) * | 2014-02-13 | 2015-08-20 | シャープ株式会社 | 裏面接合型の光電変換素子および太陽光発電システム |
US9837576B2 (en) * | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9997652B2 (en) * | 2015-03-23 | 2018-06-12 | Sunpower Corporation | Deposition approaches for emitter layers of solar cells |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
US11355657B2 (en) | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
FR3037721B1 (fr) * | 2015-06-19 | 2019-07-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue. |
US10505064B2 (en) * | 2015-09-14 | 2019-12-10 | Sharp Kabushiki Kaisha | Photovoltaic device |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN107611183B (zh) * | 2016-06-30 | 2020-06-19 | 比亚迪股份有限公司 | 电池片、电池片矩阵、太阳能电池及电池片的制备方法 |
US11233162B2 (en) * | 2017-03-31 | 2022-01-25 | The Boeing Company | Method of processing inconsistencies in solar cell devices and devices formed thereby |
CN111108609A (zh) | 2017-09-22 | 2020-05-05 | 荷兰应用自然科学研究组织Tno | 具有p型导电性的指叉背接触式太阳能电池 |
CN109308470B (zh) * | 2018-09-28 | 2021-01-01 | 武汉华星光电技术有限公司 | 指纹感测装置及其制造方法 |
CN111834470A (zh) * | 2019-03-26 | 2020-10-27 | 福建金石能源有限公司 | 一种交叉网状电接触的背接触异质结电池及组件制作方法 |
CN113284794B (zh) * | 2021-02-25 | 2023-03-24 | 宁夏隆基乐叶科技有限公司 | 一种硅基底的掺杂方法、太阳能电池及其制作方法 |
CN115548155A (zh) | 2021-06-30 | 2022-12-30 | 晶科绿能(上海)管理有限公司 | 太阳能电池及光伏组件 |
CN114744056A (zh) * | 2022-04-01 | 2022-07-12 | 西安隆基乐叶光伏科技有限公司 | 太阳能电池及其加工方法 |
CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114792743B (zh) * | 2022-05-05 | 2024-07-05 | 通威太阳能(成都)有限公司 | 太阳电池及其制备方法、光伏系统 |
CN115312633B (zh) | 2022-10-11 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种无掩膜层联合钝化背接触电池及其制备方法 |
CN117673207B (zh) * | 2024-02-01 | 2024-05-14 | 通威太阳能(眉山)有限公司 | 一种太阳电池的制备方法、太阳电池及光伏组件 |
CN117810310B (zh) * | 2024-02-29 | 2024-06-07 | 浙江晶科能源有限公司 | 太阳能电池制备方法、太阳能电池及光伏组件 |
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- 2012-12-19 DE DE112012005381.8T patent/DE112012005381T5/de active Pending
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- 2012-12-19 JP JP2014548850A patent/JP6208682B2/ja active Active
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CN104011881B (zh) | 2016-05-04 |
JP6208682B2 (ja) | 2017-10-04 |
KR20140106701A (ko) | 2014-09-03 |
TWI685984B (zh) | 2020-02-21 |
AU2015210421A1 (en) | 2015-09-03 |
AU2017221854A1 (en) | 2017-09-21 |
KR102223562B1 (ko) | 2021-03-04 |
TW201707224A (zh) | 2017-02-16 |
AU2015210421B2 (en) | 2017-06-01 |
JP6411604B2 (ja) | 2018-10-24 |
KR101991791B1 (ko) | 2019-06-21 |
AU2012358982A1 (en) | 2014-07-03 |
WO2013096500A1 (en) | 2013-06-27 |
AU2012358982B2 (en) | 2015-05-07 |
JP7120514B2 (ja) | 2022-08-17 |
JP2017228796A (ja) | 2017-12-28 |
TWI559563B (zh) | 2016-11-21 |
JP6701295B2 (ja) | 2020-05-27 |
CN106252457A (zh) | 2016-12-21 |
JP2019024107A (ja) | 2019-02-14 |
JP2015505167A (ja) | 2015-02-16 |
AU2015210421B9 (en) | 2017-11-09 |
KR20200039850A (ko) | 2020-04-16 |
CN104011881A (zh) | 2014-08-27 |
KR102101408B1 (ko) | 2020-04-17 |
CN106252457B (zh) | 2018-10-12 |
JP2020129689A (ja) | 2020-08-27 |
KR20190073594A (ko) | 2019-06-26 |
AU2020200717A1 (en) | 2020-02-20 |
TW201344931A (zh) | 2013-11-01 |
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