JP6208682B2 - ハイブリッドポリシリコンヘテロ接合裏面コンタクト電池 - Google Patents
ハイブリッドポリシリコンヘテロ接合裏面コンタクト電池 Download PDFInfo
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- JP6208682B2 JP6208682B2 JP2014548850A JP2014548850A JP6208682B2 JP 6208682 B2 JP6208682 B2 JP 6208682B2 JP 2014548850 A JP2014548850 A JP 2014548850A JP 2014548850 A JP2014548850 A JP 2014548850A JP 6208682 B2 JP6208682 B2 JP 6208682B2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 51
- 229920005591 polysilicon Polymers 0.000 title claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 138
- 229910052710 silicon Inorganic materials 0.000 claims description 138
- 239000010703 silicon Substances 0.000 claims description 138
- 238000000034 method Methods 0.000 claims description 93
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000151 deposition Methods 0.000 claims description 31
- 239000006117 anti-reflective coating Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 48
- 238000005530 etching Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
(項目1)
シリコン基板を含む太陽電池を製造する方法であって、シリコン基板が通常動作時に太陽に面する前面及び上記前面と反対の裏面を有し、
上記方法は、
上記裏面上に薄い誘電体層及び上記薄い誘電体層上に成膜されたシリコン層を有するシリコン基板を準備することと、
上記成膜されたシリコン層上にドーピング材料の層を形成することと、
上記ドーピング材料の層上に酸化物層を形成することと、
上記酸化物層、上記ドーピング材料の層及び上記成膜されたシリコン層を交差指型パターンに部分的に除去することと、
昇温して上記ドーピング材料の層から上記成膜されたシリコン層にドーパントを移動させると同時に、酸化物層を成長させることと、
ドーピングされた結晶化ポリシリコン層を形成するために、上記成膜されたシリコン層に上記ドーピング材料の層からのドーパントをドーピングすることと、
上記太陽電池の上記裏面上に、ドーピングされたワイドバンドギャップ半導体及び反射防止コーティングを成膜することと、
上記太陽電池の上記前面上に、ドーピングされたワイドバンドギャップ半導体及び反射防止コーティングを成膜することとを含む方法。
(項目2)
上記シリコン基板を準備することが、N型バルクシリコンのシリコン基板を準備することを含む、項目1に記載の方法。
(項目3)
上記シリコン基板を準備することが、P型バルクシリコンのシリコン基板を提供することを含む、項目1に記載の方法。
(項目4)
上記成膜されたシリコン層上にドーピング材料の層を形成することが、上記成膜されたシリコン層上にポジ型ドーピング材料の層を形成することを含む、項目1に記載の方法。
(項目5)
上記成膜されたシリコン層上にドーピング材料の層を形成することが、上記成膜されたシリコン層上にネガ型ドーピング材料の層を形成することを含む、項目1に記載の方法。
(項目6)
上記ドーピングされたワイドバンドギャップ半導体を成膜することが、ドーピングされたワイドバンドギャップアモルファスシリコンを成膜することを含む、項目1に記載の方法。
(項目7)
上記ドーピングされたワイドバンドギャップ半導体を成膜することが、1.05電子ボルトより大きいバンドギャップを有する半導体を成膜することを含む、項目1に記載の方法。
(項目8)
上記酸化物層、上記ドーピング材料の層及び上記成膜されたシリコン層を交差指型パターンに部分的に除去することが、上記酸化物層、上記ドーピング材料の層及び上記成膜されたシリコン層を除去するためにエッチングプロセスを使用することを含む、項目1に記載の方法。
(項目9)
上記酸化物層、上記ドーピング材料の層及び上記成膜されたシリコン層を上記交差指型パターンに部分的に除去することが、上記酸化物層、上記ドーピング材料の層及び上記成膜されたシリコン層を除去するためにアブレーションプロセスを使用することを含む、項目1に記載の方法。
(項目10)
上記太陽電池の上記前面上に反射防止コーティングを成膜することが、窒化ケイ素を成膜することを含む、項目1に記載の方法。
(項目11)
シリコン基板を備える太陽電池を製造する方法であって、上記シリコン基板が、通常動作時に太陽に面する前面及び上記前面と反対の裏面を有し、
上記方法は、
上記裏面上に薄い誘電体層を及び上記薄い誘電体層上にドーピングされたシリコン層を有するシリコン基板を準備することと、
上記ドーピングされたシリコン層上に酸化物層を形成することと、
上記酸化物層及び上記ドーピングされたシリコン層を交差指型パターンに部分的に除去することと、
テクスチャ化シリコン領域を形成するために、露出した上記シリコン基板をエッチングすることと、
酸素が供給される環境で上記シリコン基板を加熱することによって、上記太陽電池の上記裏面上に酸化ケイ素層を成長させることであって、上記ドーピングされたシリコン層を結晶化して、ドーピングされたポリシリコン層を形成することと、
上記太陽電池の上記前面及び上記裏面上に、ドーピングされたワイドバンドギャップアモルファスシリコン及び反射防止コーティングを同時に成膜することと、
一連のコンタクト開口部を形成するために、上記反射防止コーティング、上記ドーピングされたワイドバンドギャップアモルファスシリコン及び上記酸化物層を部分的に除去することと、
上記ドーピングされたポリシリコンに電気的に結合される第1金属グリッド、及び、上記太陽電池の上記裏面の上記交差指型パターンの一部分に電気的に結合される第2金属グリッドを同時に形成することと、を含む、方法。
(項目12)
上記ドーピングされたポリシリコン層が、負ドーピングされたポリシリコンの層を含む、項目11に記載の方法。
(項目13)
上記ドーピングされたポリシリコン層が、正ドーピングされたポリシリコンの層を含む、項目11に記載の方法。
(項目14)
上記太陽電池の上記前面及び裏面上に反射防止コーティングを成膜することが、上記太陽電池の上記裏面及び前面に窒化ケイ素を成膜することを含む、項目11に記載の方法。
(項目15)
シリコン基板を備える太陽電池を製造する方法であって、上記シリコン基板が、通常動作時に太陽に面する前面及び上記前面と反対の裏面を有し、
上記方法は、
上記裏面に薄い誘電体層を及び上記薄い誘電体層上にドーピングされたシリコン層を有するシリコン基板を準備することと、
上記ドーピングされたシリコン層上に酸化物層を形成することと、
上記酸化物層及び上記ドーピングされたシリコン層を交差指型パターンに部分的に除去することと、
テクスチャ化シリコン領域を形成するために、露出した上記シリコン基板をエッチングすることと、
酸素が供給される環境で上記シリコン基板を加熱することによって、上記太陽電池の上記裏面上に酸化ケイ素層を成長させることであって、上記シリコン層を結晶化して、ドーピングされたポリシリコン層を形成することと、
上記太陽電池の上記裏面上にドーピングされたワイドバンドギャップアモルファスシリコン及び反射防止コーティングを成膜することと、
上記太陽電池の上記前面上にドーピングされたワイドバンドギャップアモルファスシリコン及び反射防止コーティングを成膜することと、を含む方法。
(項目16)
上記ドーピングされたポリシリコン層が、リンを含む、項目15に記載の方法。
(項目17)
上記ドーピングされたポリシリコン層が、ホウ素を含む、項目15に記載の方法。
(項目18)
シリコン基板を備える太陽電池を製造する方法であって、上記シリコン基板が、正常動作時に太陽に面する前面及び上記前面と反対の裏面を有し、
上記方法は、
上記裏面上に薄い誘電体層を及び上記薄い誘電体層上にドーピングされたシリコン層を有するシリコン基板を準備することと、
上記ドーピングされたシリコン層上に酸化物層を形成することと、
上記酸化物層及び上記ドーピングされたシリコン層を交差指型パターンに部分的に除去することと、
酸素が供給される環境で上記シリコン基板を加熱することによって、上記太陽電池の上記裏面上に酸化ケイ素層を成長させることであって、上記シリコン層を結晶化して、ドーピングされたポリシリコン層を形成することと、
上記太陽電池の上記裏面上にドーピングされたワイドバンドギャップ半導体を成膜することと、
上記太陽電池の上記前面上にドーピングされたワイドバンドギャップ半導体及び反射防止コーティングを成膜することと、を含む方法。
(項目19)
上記シリコン基板を準備することが、N型バルクシリコンのシリコン基板を準備することを含む、項目18に記載の方法。
(項目20)
上記シリコン基板を準備することが、P型バルクシリコンのシリコン基板を準備することを含む、項目18に記載の方法。
Claims (9)
- シリコン基板を含む太陽電池を製造する方法であって、前記シリコン基板が通常動作時に太陽に面する前面及び前記前面と反対の裏面を有し、
前記方法は、
薄い誘電体層上に形成されるドーピングされたシリコン層の上に、酸化物層を形成することと、
前記酸化物層及び前記ドーピングされたシリコン層を交差指型パターンに部分的に除去することと、
酸素が供給される環境で前記シリコン基板を加熱することによって、前記太陽電池の前記裏面の上に酸化ケイ素層を成長させることであって、ドーピングされたポリシリコン層を形成するために前記シリコン層が結晶化されることと、
前記太陽電池の前記裏面上に、半導体層を成膜することと、
前記太陽電池の前記前面上に半導体層及び反射防止コーティングを成膜することと、を含む方法。 - 前記半導体層を成膜することが、ドーピングされたワイドバンドギャップ半導体を成膜することを含む、請求項1に記載の方法。
- 前記ドーピングされたワイドバンドギャップ半導体を成膜することが、ドーピングされたワイドバンドギャップアモルファスシリコンを成膜することを含む、請求項2に記載の方法。
- 前記ドーピングされたワイドバンドギャップ半導体を成膜することが、1.05電子ボルトより大きいバンドギャップを有する半導体を成膜することを含む、請求項2又は3に記載の方法。
- 前記ドーピングされたワイドバンドギャップ半導体を成膜することが、10Ω・cmより大きい抵抗を有する部分的に導電性を有するドーピングされたワイドバンドギャップ半導体を成膜することを含む、請求項2から4のいずれか一項に記載の方法。
- 前記ドーピングされたワイドバンドギャップ半導体を成膜することが、
前記太陽電池の前記裏面上に、ドーピングされたワイドバンドギャップアモルファスシリコンの厚い層及び反射防止コーティングを被覆することと、
前記太陽電池の前記前面上に、ドーピングされたワイドバンドギャップアモルファスシリコンの薄い層及び反射防止コーティングを被覆することと、を含み、
前記薄い層が前記厚い層の厚さの30%未満である、請求項2から5のいずれか一項に記載の方法。 - 前記薄い層が前記厚い層の厚さの10%である、請求項6に記載の方法。
- 一連のコンタクト開口部を形成するために前記反射防止コーティング、前記半導体層及び前記酸化物層を部分的に除去することと、
前記ドーピングされたポリシリコン層に電気的に結合される第1金属グリッド、及び、前記太陽電池の前記裏面上の前記交差指型パターンの一部分に電気的に結合される第2金属グリッドを形成することと、を更に含む、請求項1から7のいずれか一項に記載の方法。 - 前記シリコン基板の露出した領域を表出させるために、前記酸化物層及び前記ドーピングされたシリコン層を交差指型パターンに部分的に除去することが、前記酸化物層及び前記ドーピングされたシリコン層を除去するためにアブレーションプロセスを使用することを含む、請求項1から8のいずれか一項に記載の方法。
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