TWI559563B - 混合式多晶矽異質接面背接觸電池 - Google Patents
混合式多晶矽異質接面背接觸電池 Download PDFInfo
- Publication number
- TWI559563B TWI559563B TW101148468A TW101148468A TWI559563B TW I559563 B TWI559563 B TW I559563B TW 101148468 A TW101148468 A TW 101148468A TW 101148468 A TW101148468 A TW 101148468A TW I559563 B TWI559563 B TW I559563B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- doped
- germanium
- solar cell
- band gap
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 56
- 229920005591 polysilicon Polymers 0.000 title claims description 56
- 229910052732 germanium Inorganic materials 0.000 claims description 138
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 138
- 238000000034 method Methods 0.000 claims description 112
- 239000004065 semiconductor Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000002019 doping agent Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 29
- 239000006117 anti-reflective coating Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000002679 ablation Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 7
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000019617 pupation Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/333,908 US8679889B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,904 US8597970B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201344931A TW201344931A (zh) | 2013-11-01 |
TWI559563B true TWI559563B (zh) | 2016-11-21 |
Family
ID=48669465
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101148468A TWI559563B (zh) | 2011-12-21 | 2012-12-19 | 混合式多晶矽異質接面背接觸電池 |
TW105129024A TWI685984B (zh) | 2011-12-21 | 2012-12-19 | 混合式多晶矽異質接面背接觸電池 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105129024A TWI685984B (zh) | 2011-12-21 | 2012-12-19 | 混合式多晶矽異質接面背接觸電池 |
Country Status (7)
Country | Link |
---|---|
JP (4) | JP6208682B2 (ja) |
KR (3) | KR101991791B1 (ja) |
CN (2) | CN106252457B (ja) |
AU (4) | AU2012358982B2 (ja) |
DE (1) | DE112012005381T5 (ja) |
TW (2) | TWI559563B (ja) |
WO (1) | WO2013096500A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
CN103594541B (zh) * | 2013-10-12 | 2017-01-04 | 南昌大学 | 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法 |
US9196758B2 (en) | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015122242A1 (ja) * | 2014-02-13 | 2015-08-20 | シャープ株式会社 | 裏面接合型の光電変換素子および太陽光発電システム |
US9837576B2 (en) * | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9997652B2 (en) * | 2015-03-23 | 2018-06-12 | Sunpower Corporation | Deposition approaches for emitter layers of solar cells |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
FR3037721B1 (fr) * | 2015-06-19 | 2019-07-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue. |
WO2017047375A1 (ja) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN107611183B (zh) * | 2016-06-30 | 2020-06-19 | 比亚迪股份有限公司 | 电池片、电池片矩阵、太阳能电池及电池片的制备方法 |
US11233162B2 (en) * | 2017-03-31 | 2022-01-25 | The Boeing Company | Method of processing inconsistencies in solar cell devices and devices formed thereby |
CN111108609A (zh) | 2017-09-22 | 2020-05-05 | 荷兰应用自然科学研究组织Tno | 具有p型导电性的指叉背接触式太阳能电池 |
CN109308470B (zh) * | 2018-09-28 | 2021-01-01 | 武汉华星光电技术有限公司 | 指纹感测装置及其制造方法 |
CN111834470A (zh) * | 2019-03-26 | 2020-10-27 | 福建金石能源有限公司 | 一种交叉网状电接触的背接触异质结电池及组件制作方法 |
CN113284794B (zh) * | 2021-02-25 | 2023-03-24 | 宁夏隆基乐叶科技有限公司 | 一种硅基底的掺杂方法、太阳能电池及其制作方法 |
CN115548155A (zh) * | 2021-06-30 | 2022-12-30 | 晶科绿能(上海)管理有限公司 | 太阳能电池及光伏组件 |
CN114744056A (zh) * | 2022-04-01 | 2022-07-12 | 西安隆基乐叶光伏科技有限公司 | 太阳能电池及其加工方法 |
CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114792743A (zh) * | 2022-05-05 | 2022-07-26 | 通威太阳能(眉山)有限公司 | 太阳电池及其制备方法、光伏系统 |
CN115312633B (zh) * | 2022-10-11 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种无掩膜层联合钝化背接触电池及其制备方法 |
CN117673207B (zh) * | 2024-02-01 | 2024-05-14 | 通威太阳能(眉山)有限公司 | 一种太阳电池的制备方法、太阳电池及光伏组件 |
CN117810310B (zh) * | 2024-02-29 | 2024-06-07 | 浙江晶科能源有限公司 | 太阳能电池制备方法、太阳能电池及光伏组件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1862840A (zh) * | 2005-05-12 | 2006-11-15 | 通用电气公司 | 表面钝化的光生伏打器件 |
CN101142691A (zh) * | 2005-03-16 | 2008-03-12 | Imecvzw公司 | 具有厚氧化硅和氮化硅钝化层的光电池及其制造方法 |
TW200814344A (en) * | 2006-07-24 | 2008-03-16 | Sunpower Corp | Solar cell with reduced base diffusion area |
WO2009094578A2 (en) * | 2008-01-24 | 2009-07-30 | Applied Materials, Inc. | Improved hit solar cell structure |
CN101777603A (zh) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 背接触太阳能电池的制造方法 |
US20100193027A1 (en) * | 2009-02-04 | 2010-08-05 | Kwangsun Ji | Solar cell and method for manufacturing the same |
US20110180128A1 (en) * | 2010-12-21 | 2011-07-28 | Suntae Hwang | Thin film solar cell |
US20110299167A1 (en) * | 2010-06-07 | 2011-12-08 | General Atomics | Reflective coating, pigment, colored composition, and process of producing a reflective pigment |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
US7119271B2 (en) * | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
JP4511146B2 (ja) * | 2003-09-26 | 2010-07-28 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
JP4999937B2 (ja) * | 2008-01-30 | 2012-08-15 | 京セラ株式会社 | 太陽電池素子および太陽電池素子の製造方法 |
KR101155343B1 (ko) * | 2008-02-25 | 2012-06-11 | 엘지전자 주식회사 | 백 콘택 태양전지의 제조 방법 |
JP2011517120A (ja) * | 2008-04-09 | 2011-05-26 | アプライド マテリアルズ インコーポレイテッド | ポリシリコンエミッタ太陽電池用簡易裏面接触 |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
JP5461028B2 (ja) | 2009-02-26 | 2014-04-02 | 三洋電機株式会社 | 太陽電池 |
EP2408021A4 (en) | 2009-03-10 | 2017-05-17 | Panasonic Intellectual Property Management Co., Ltd. | Process for producing solar battery, and solar battery |
BRPI1009416A2 (pt) * | 2009-03-30 | 2016-03-01 | Sanyo Electric Co | célula solar. |
DE102009024598A1 (de) * | 2009-06-10 | 2011-01-05 | Institut Für Solarenergieforschung Gmbh | Solarzelle mit Kontaktstruktur mit geringen Rekombinationsverlusten sowie Herstellungsverfahren für solche Solarzellen |
KR101141219B1 (ko) * | 2010-05-11 | 2012-05-04 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
EP2293351B1 (en) * | 2009-09-07 | 2017-04-12 | Lg Electronics Inc. | Solar cell |
KR101146736B1 (ko) * | 2009-09-14 | 2012-05-17 | 엘지전자 주식회사 | 태양 전지 |
US8465909B2 (en) * | 2009-11-04 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned masking for solar cell manufacture |
US20110132444A1 (en) * | 2010-01-08 | 2011-06-09 | Meier Daniel L | Solar cell including sputtered reflective layer and method of manufacture thereof |
JP5627243B2 (ja) | 2010-01-28 | 2014-11-19 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
KR20120068226A (ko) * | 2010-12-17 | 2012-06-27 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
KR101773837B1 (ko) * | 2011-01-21 | 2017-09-01 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
CN102185030B (zh) * | 2011-04-13 | 2013-08-21 | 山东力诺太阳能电力股份有限公司 | 基于n型硅片的背接触式hit太阳能电池制备方法 |
CN102437243B (zh) * | 2011-12-08 | 2013-11-20 | 常州天合光能有限公司 | 异质浮动结背钝化的hit太阳能电池结构及其制备工艺 |
-
2012
- 2012-12-19 JP JP2014548850A patent/JP6208682B2/ja active Active
- 2012-12-19 KR KR1020147019770A patent/KR101991791B1/ko active IP Right Grant
- 2012-12-19 CN CN201610206738.2A patent/CN106252457B/zh active Active
- 2012-12-19 DE DE112012005381.8T patent/DE112012005381T5/de active Pending
- 2012-12-19 AU AU2012358982A patent/AU2012358982B2/en active Active
- 2012-12-19 TW TW101148468A patent/TWI559563B/zh active
- 2012-12-19 CN CN201280063686.8A patent/CN104011881B/zh active Active
- 2012-12-19 TW TW105129024A patent/TWI685984B/zh active
- 2012-12-19 WO PCT/US2012/070709 patent/WO2013096500A1/en active Application Filing
- 2012-12-19 KR KR1020207010360A patent/KR102223562B1/ko active IP Right Grant
- 2012-12-19 KR KR1020197017298A patent/KR102101408B1/ko active Application Filing
-
2015
- 2015-08-07 AU AU2015210421A patent/AU2015210421B9/en active Active
-
2017
- 2017-09-01 AU AU2017221854A patent/AU2017221854A1/en not_active Abandoned
- 2017-09-07 JP JP2017171897A patent/JP6411604B2/ja active Active
-
2018
- 2018-09-26 JP JP2018180765A patent/JP6701295B2/ja active Active
-
2020
- 2020-01-31 AU AU2020200717A patent/AU2020200717A1/en not_active Abandoned
- 2020-05-01 JP JP2020081590A patent/JP7120514B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101142691A (zh) * | 2005-03-16 | 2008-03-12 | Imecvzw公司 | 具有厚氧化硅和氮化硅钝化层的光电池及其制造方法 |
CN1862840A (zh) * | 2005-05-12 | 2006-11-15 | 通用电气公司 | 表面钝化的光生伏打器件 |
TW200814344A (en) * | 2006-07-24 | 2008-03-16 | Sunpower Corp | Solar cell with reduced base diffusion area |
WO2009094578A2 (en) * | 2008-01-24 | 2009-07-30 | Applied Materials, Inc. | Improved hit solar cell structure |
CN101777603A (zh) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 背接触太阳能电池的制造方法 |
US20100193027A1 (en) * | 2009-02-04 | 2010-08-05 | Kwangsun Ji | Solar cell and method for manufacturing the same |
US20110299167A1 (en) * | 2010-06-07 | 2011-12-08 | General Atomics | Reflective coating, pigment, colored composition, and process of producing a reflective pigment |
US20110180128A1 (en) * | 2010-12-21 | 2011-07-28 | Suntae Hwang | Thin film solar cell |
Also Published As
Publication number | Publication date |
---|---|
JP2017228796A (ja) | 2017-12-28 |
KR20200039850A (ko) | 2020-04-16 |
AU2020200717A1 (en) | 2020-02-20 |
DE112012005381T5 (de) | 2014-09-04 |
JP6208682B2 (ja) | 2017-10-04 |
JP6411604B2 (ja) | 2018-10-24 |
KR102223562B1 (ko) | 2021-03-04 |
AU2015210421B9 (en) | 2017-11-09 |
JP2020129689A (ja) | 2020-08-27 |
CN104011881B (zh) | 2016-05-04 |
JP7120514B2 (ja) | 2022-08-17 |
AU2015210421A1 (en) | 2015-09-03 |
KR20140106701A (ko) | 2014-09-03 |
TWI685984B (zh) | 2020-02-21 |
AU2012358982B2 (en) | 2015-05-07 |
KR20190073594A (ko) | 2019-06-26 |
CN106252457B (zh) | 2018-10-12 |
KR101991791B1 (ko) | 2019-06-21 |
JP2015505167A (ja) | 2015-02-16 |
WO2013096500A1 (en) | 2013-06-27 |
JP6701295B2 (ja) | 2020-05-27 |
AU2012358982A1 (en) | 2014-07-03 |
TW201344931A (zh) | 2013-11-01 |
AU2015210421B2 (en) | 2017-06-01 |
CN104011881A (zh) | 2014-08-27 |
CN106252457A (zh) | 2016-12-21 |
TW201707224A (zh) | 2017-02-16 |
KR102101408B1 (ko) | 2020-04-17 |
JP2019024107A (ja) | 2019-02-14 |
AU2017221854A1 (en) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI559563B (zh) | 混合式多晶矽異質接面背接觸電池 | |
US20230238471A1 (en) | Hybrid polysilicon heterojunction back contact cell | |
US10957809B2 (en) | Solar cell having an emitter region with wide bandgap semiconductor material | |
US8679889B2 (en) | Hybrid polysilicon heterojunction back contact cell |