KR101991791B1 - 하이브리드 폴리실리콘 이종접합 배면 접점 전지 - Google Patents
하이브리드 폴리실리콘 이종접합 배면 접점 전지 Download PDFInfo
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- KR101991791B1 KR101991791B1 KR1020147019770A KR20147019770A KR101991791B1 KR 101991791 B1 KR101991791 B1 KR 101991791B1 KR 1020147019770 A KR1020147019770 A KR 1020147019770A KR 20147019770 A KR20147019770 A KR 20147019770A KR 101991791 B1 KR101991791 B1 KR 101991791B1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims description 20
- 239000006117 anti-reflective coating Substances 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 35
- 239000002019 doping agent Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/547—Monocrystalline silicon PV cells
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Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/333,908 | 2011-12-21 | ||
US13/333,908 US8679889B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,904 | 2011-12-21 | ||
US13/333,904 US8597970B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
PCT/US2012/070709 WO2013096500A1 (en) | 2011-12-21 | 2012-12-19 | Hybrid polysilicon heterojunction back contact cell |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197017298A Division KR102101408B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Publications (2)
Publication Number | Publication Date |
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KR20140106701A KR20140106701A (ko) | 2014-09-03 |
KR101991791B1 true KR101991791B1 (ko) | 2019-06-21 |
Family
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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KR1020147019770A KR101991791B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR1020197017298A KR102101408B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR1020207010360A KR102223562B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197017298A KR102101408B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR1020207010360A KR102223562B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Country Status (7)
Country | Link |
---|---|
JP (4) | JP6208682B2 (ja) |
KR (3) | KR101991791B1 (ja) |
CN (2) | CN106252457B (ja) |
AU (4) | AU2012358982B2 (ja) |
DE (1) | DE112012005381T5 (ja) |
TW (2) | TWI559563B (ja) |
WO (1) | WO2013096500A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
CN103594541B (zh) * | 2013-10-12 | 2017-01-04 | 南昌大学 | 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法 |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015122242A1 (ja) * | 2014-02-13 | 2015-08-20 | シャープ株式会社 | 裏面接合型の光電変換素子および太陽光発電システム |
US9837576B2 (en) | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9997652B2 (en) * | 2015-03-23 | 2018-06-12 | Sunpower Corporation | Deposition approaches for emitter layers of solar cells |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
FR3037721B1 (fr) * | 2015-06-19 | 2019-07-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue. |
JP6785775B2 (ja) * | 2015-09-14 | 2020-11-18 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN107611183B (zh) * | 2016-06-30 | 2020-06-19 | 比亚迪股份有限公司 | 电池片、电池片矩阵、太阳能电池及电池片的制备方法 |
US11233162B2 (en) | 2017-03-31 | 2022-01-25 | The Boeing Company | Method of processing inconsistencies in solar cell devices and devices formed thereby |
WO2019059765A1 (en) | 2017-09-22 | 2019-03-28 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | BACK CONTACT SOLAR CELL P-TYPE CONDUCTIVITY INTERDIGITANCE |
CN109308470B (zh) * | 2018-09-28 | 2021-01-01 | 武汉华星光电技术有限公司 | 指纹感测装置及其制造方法 |
CN111834470A (zh) * | 2019-03-26 | 2020-10-27 | 福建金石能源有限公司 | 一种交叉网状电接触的背接触异质结电池及组件制作方法 |
EP3770975B1 (en) | 2019-07-26 | 2021-11-24 | Meyer Burger (Germany) GmbH | Photovoltaic device and method for manufacturing the same |
CN113284794B (zh) * | 2021-02-25 | 2023-03-24 | 宁夏隆基乐叶科技有限公司 | 一种硅基底的掺杂方法、太阳能电池及其制作方法 |
CN115548155A (zh) * | 2021-06-30 | 2022-12-30 | 晶科绿能(上海)管理有限公司 | 太阳能电池及光伏组件 |
CN114744056A (zh) * | 2022-04-01 | 2022-07-12 | 西安隆基乐叶光伏科技有限公司 | 太阳能电池及其加工方法 |
CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114792743B (zh) * | 2022-05-05 | 2024-07-05 | 通威太阳能(成都)有限公司 | 太阳电池及其制备方法、光伏系统 |
CN115312633B (zh) | 2022-10-11 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种无掩膜层联合钝化背接触电池及其制备方法 |
CN117673207B (zh) * | 2024-02-01 | 2024-05-14 | 通威太阳能(眉山)有限公司 | 一种太阳电池的制备方法、太阳电池及光伏组件 |
CN117810310B (zh) * | 2024-02-29 | 2024-06-07 | 浙江晶科能源有限公司 | 太阳能电池制备方法、太阳能电池及光伏组件 |
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JP2010199415A (ja) | 2009-02-26 | 2010-09-09 | Sanyo Electric Co Ltd | 太陽電池 |
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CN104011881B (zh) | 2016-05-04 |
AU2015210421B9 (en) | 2017-11-09 |
AU2015210421B2 (en) | 2017-06-01 |
CN106252457B (zh) | 2018-10-12 |
TW201344931A (zh) | 2013-11-01 |
JP6208682B2 (ja) | 2017-10-04 |
JP2017228796A (ja) | 2017-12-28 |
AU2012358982A1 (en) | 2014-07-03 |
DE112012005381T5 (de) | 2014-09-04 |
JP7120514B2 (ja) | 2022-08-17 |
TWI559563B (zh) | 2016-11-21 |
WO2013096500A1 (en) | 2013-06-27 |
JP2019024107A (ja) | 2019-02-14 |
KR20190073594A (ko) | 2019-06-26 |
CN104011881A (zh) | 2014-08-27 |
TW201707224A (zh) | 2017-02-16 |
AU2012358982B2 (en) | 2015-05-07 |
JP6701295B2 (ja) | 2020-05-27 |
KR20200039850A (ko) | 2020-04-16 |
KR20140106701A (ko) | 2014-09-03 |
CN106252457A (zh) | 2016-12-21 |
AU2017221854A1 (en) | 2017-09-21 |
TWI685984B (zh) | 2020-02-21 |
JP6411604B2 (ja) | 2018-10-24 |
JP2020129689A (ja) | 2020-08-27 |
AU2015210421A1 (en) | 2015-09-03 |
KR102101408B1 (ko) | 2020-04-17 |
KR102223562B1 (ko) | 2021-03-04 |
AU2020200717A1 (en) | 2020-02-20 |
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