KR102101408B1 - 하이브리드 폴리실리콘 이종접합 배면 접점 전지 - Google Patents
하이브리드 폴리실리콘 이종접합 배면 접점 전지 Download PDFInfo
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- KR102101408B1 KR102101408B1 KR1020197017298A KR20197017298A KR102101408B1 KR 102101408 B1 KR102101408 B1 KR 102101408B1 KR 1020197017298 A KR1020197017298 A KR 1020197017298A KR 20197017298 A KR20197017298 A KR 20197017298A KR 102101408 B1 KR102101408 B1 KR 102101408B1
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- layer
- solar cell
- doped semiconductor
- silicon
- silicon substrate
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 41
- 229920005591 polysilicon Polymers 0.000 title abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 98
- 239000010703 silicon Substances 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 37
- 239000006117 anti-reflective coating Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 60
- 229910052751 metal Inorganic materials 0.000 abstract description 25
- 239000002184 metal Substances 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 238000001465 metallisation Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/333,908 | 2011-12-21 | ||
US13/333,904 US8597970B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,908 US8679889B2 (en) | 2011-12-21 | 2011-12-21 | Hybrid polysilicon heterojunction back contact cell |
US13/333,904 | 2011-12-21 | ||
PCT/US2012/070709 WO2013096500A1 (en) | 2011-12-21 | 2012-12-19 | Hybrid polysilicon heterojunction back contact cell |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020147019770A Division KR101991791B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020207010360A Division KR102223562B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Publications (2)
Publication Number | Publication Date |
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KR20190073594A KR20190073594A (ko) | 2019-06-26 |
KR102101408B1 true KR102101408B1 (ko) | 2020-04-17 |
Family
ID=48669465
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147019770A KR101991791B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR1020197017298A KR102101408B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR1020207010360A KR102223562B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020147019770A KR101991791B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020207010360A KR102223562B1 (ko) | 2011-12-21 | 2012-12-19 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Country Status (7)
Country | Link |
---|---|
JP (4) | JP6208682B2 (zh) |
KR (3) | KR101991791B1 (zh) |
CN (2) | CN104011881B (zh) |
AU (4) | AU2012358982B2 (zh) |
DE (1) | DE112012005381T5 (zh) |
TW (2) | TWI559563B (zh) |
WO (1) | WO2013096500A1 (zh) |
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US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
CN103594541B (zh) * | 2013-10-12 | 2017-01-04 | 南昌大学 | 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法 |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015122242A1 (ja) * | 2014-02-13 | 2015-08-20 | シャープ株式会社 | 裏面接合型の光電変換素子および太陽光発電システム |
US9837576B2 (en) * | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9997652B2 (en) * | 2015-03-23 | 2018-06-12 | Sunpower Corporation | Deposition approaches for emitter layers of solar cells |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
FR3037721B1 (fr) * | 2015-06-19 | 2019-07-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue. |
WO2017047375A1 (ja) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN107611183B (zh) * | 2016-06-30 | 2020-06-19 | 比亚迪股份有限公司 | 电池片、电池片矩阵、太阳能电池及电池片的制备方法 |
US11233162B2 (en) * | 2017-03-31 | 2022-01-25 | The Boeing Company | Method of processing inconsistencies in solar cell devices and devices formed thereby |
CN111108609A (zh) | 2017-09-22 | 2020-05-05 | 荷兰应用自然科学研究组织Tno | 具有p型导电性的指叉背接触式太阳能电池 |
CN109308470B (zh) * | 2018-09-28 | 2021-01-01 | 武汉华星光电技术有限公司 | 指纹感测装置及其制造方法 |
CN111834470A (zh) * | 2019-03-26 | 2020-10-27 | 福建金石能源有限公司 | 一种交叉网状电接触的背接触异质结电池及组件制作方法 |
CN113284794B (zh) * | 2021-02-25 | 2023-03-24 | 宁夏隆基乐叶科技有限公司 | 一种硅基底的掺杂方法、太阳能电池及其制作方法 |
CN115548155A (zh) | 2021-06-30 | 2022-12-30 | 晶科绿能(上海)管理有限公司 | 太阳能电池及光伏组件 |
CN114823973A (zh) * | 2022-04-20 | 2022-07-29 | 通威太阳能(眉山)有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114792743A (zh) * | 2022-05-05 | 2022-07-26 | 通威太阳能(眉山)有限公司 | 太阳电池及其制备方法、光伏系统 |
CN115312633B (zh) * | 2022-10-11 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种无掩膜层联合钝化背接触电池及其制备方法 |
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JP2019024107A (ja) | 2019-02-14 |
TWI685984B (zh) | 2020-02-21 |
CN104011881A (zh) | 2014-08-27 |
CN106252457A (zh) | 2016-12-21 |
JP6208682B2 (ja) | 2017-10-04 |
CN104011881B (zh) | 2016-05-04 |
CN106252457B (zh) | 2018-10-12 |
JP6411604B2 (ja) | 2018-10-24 |
JP2017228796A (ja) | 2017-12-28 |
AU2017221854A1 (en) | 2017-09-21 |
TWI559563B (zh) | 2016-11-21 |
AU2015210421A1 (en) | 2015-09-03 |
KR20140106701A (ko) | 2014-09-03 |
DE112012005381T5 (de) | 2014-09-04 |
AU2012358982A1 (en) | 2014-07-03 |
TW201344931A (zh) | 2013-11-01 |
KR20190073594A (ko) | 2019-06-26 |
WO2013096500A1 (en) | 2013-06-27 |
TW201707224A (zh) | 2017-02-16 |
KR20200039850A (ko) | 2020-04-16 |
KR101991791B1 (ko) | 2019-06-21 |
JP2020129689A (ja) | 2020-08-27 |
AU2020200717A1 (en) | 2020-02-20 |
JP7120514B2 (ja) | 2022-08-17 |
AU2015210421B2 (en) | 2017-06-01 |
JP2015505167A (ja) | 2015-02-16 |
AU2012358982B2 (en) | 2015-05-07 |
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