CN103988330B - 可溶液处理的氧化钨缓冲层和包含它的有机电子设备 - Google Patents

可溶液处理的氧化钨缓冲层和包含它的有机电子设备 Download PDF

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Publication number
CN103988330B
CN103988330B CN201280060498.XA CN201280060498A CN103988330B CN 103988330 B CN103988330 B CN 103988330B CN 201280060498 A CN201280060498 A CN 201280060498A CN 103988330 B CN103988330 B CN 103988330B
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composition
organic
nanoparticles
tungsten oxide
film
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CN201280060498.XA
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Chinese (zh)
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CN103988330A (zh
Inventor
N·A·卢辛格
S·C·哈林
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Where Time Shares Of Co
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Nanometer Ge Lade Joint-Stock Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
CN201280060498.XA 2011-10-28 2012-10-10 可溶液处理的氧化钨缓冲层和包含它的有机电子设备 Active CN103988330B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11008644 2011-10-28
EP11008644.4 2011-10-28
PCT/CH2012/000234 WO2013059948A1 (en) 2011-10-28 2012-10-10 Solution-processable tungsten oxide buffer layers and organic electronics comprising same

Publications (2)

Publication Number Publication Date
CN103988330A CN103988330A (zh) 2014-08-13
CN103988330B true CN103988330B (zh) 2016-08-24

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CN201280060498.XA Active CN103988330B (zh) 2011-10-28 2012-10-10 可溶液处理的氧化钨缓冲层和包含它的有机电子设备

Country Status (5)

Country Link
EP (1) EP2771920B1 (https=)
JP (1) JP6214539B2 (https=)
KR (1) KR101996107B1 (https=)
CN (1) CN103988330B (https=)
WO (1) WO2013059948A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI523919B (zh) * 2014-12-04 2016-03-01 財團法人工業技術研究院 具有防霧與隔熱功能之塗料組成物、其製法及薄膜
US11462711B2 (en) * 2017-06-26 2022-10-04 Samsung Display Co., Ltd. Light-emitting device and method of fabricating display panel therewith
CN110350091A (zh) * 2019-07-02 2019-10-18 上海大学 有机光电探测器及其制备方法
CN116354399B (zh) * 2023-06-02 2023-08-04 崇义章源钨业股份有限公司 一种制备松散纳米氧化钨的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400530B2 (ja) * 1994-04-18 2003-04-28 三菱化学株式会社 耐摩耗性被覆組成物
JP2002373785A (ja) * 2001-06-15 2002-12-26 Canon Inc 発光素子及び表示装置
EP1618953B1 (en) * 2003-04-18 2010-12-08 Sumitomo Chemical Company, Limited Use of a metal catalyst
US20090014062A1 (en) * 2004-01-22 2009-01-15 Showa Denko K.K. Metal Oxide Dispersion, Metal Oxide Electrode Film, and Dye Sensitized Solar Cell
JP4799881B2 (ja) 2004-12-27 2011-10-26 三井金属鉱業株式会社 導電性インク
JP2008041894A (ja) * 2006-08-04 2008-02-21 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法
WO2009110234A1 (ja) 2008-03-04 2009-09-11 株式会社 東芝 水系分散液とそれを用いた塗料、膜および製品
JP2011005475A (ja) * 2009-05-29 2011-01-13 Sumitomo Chemical Co Ltd 光触媒体分散液およびそれを用いた光触媒機能製品

Also Published As

Publication number Publication date
JP2015501540A (ja) 2015-01-15
EP2771920A1 (en) 2014-09-03
KR101996107B1 (ko) 2019-07-03
JP6214539B2 (ja) 2017-10-18
KR20140085551A (ko) 2014-07-07
WO2013059948A1 (en) 2013-05-02
EP2771920B1 (en) 2016-08-24
CN103988330A (zh) 2014-08-13

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Address after: Swiss Shi Taifa

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Address before: Swiss Shi Taifa

Patentee before: Nanometer Ge Lade joint-stock company

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