CN103887244B - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

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CN103887244B
CN103887244B CN201410083721.3A CN201410083721A CN103887244B CN 103887244 B CN103887244 B CN 103887244B CN 201410083721 A CN201410083721 A CN 201410083721A CN 103887244 B CN103887244 B CN 103887244B
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CN103887244A (zh
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谢振宇
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Abstract

本发明涉及显示技术领域，公开了一种阵列基板及其制备方法、显示装置。该阵列基板的制备方法包括以下步骤：在衬底基板上沉积非晶硅薄膜层；对非晶硅薄膜层进行构图工艺以在非晶硅薄膜层的表面形成具有多个小孔的图形。具体地：在非晶硅薄膜层的表面涂覆光刻胶层，对光刻胶层进行曝光显影，使光刻胶层形成完全保留区域和完全去除区域，完全去除区域对应非晶硅薄膜层的表面待形成的多个小孔，通过第一刻蚀工艺对光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀。本发明在进行非晶硅激光退火处理时，溶化后的熔融硅先填充非晶硅薄膜层表面的小孔的空间，从而改善由于多余的多晶硅的体积被挤压而形成突起的晶界。

Description

阵列基板及其制备方法、显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种阵列基板及其制备方法、显示装置。
背景技术
低温多晶硅(Low Temperature Poly-silicon；简称LTPS)薄膜通常是采用激光晶化的方式，利用准分子镭射作为热源，镭射光经过投射系统后，会产生能量均匀分布的镭射光束，投射于非晶硅结构的玻璃基板上，当非晶硅结构玻璃基板吸收准分子镭射的能量后，会转变成为多晶硅结构，因整个处理过程都是在600℃以下完成，故一般玻璃基板皆可适用。图1为现有的LTPS结构的TFT（薄膜场效应晶体管）阵列基板的结构示意图，其需要在玻璃基板1的SiOx/SiNx缓冲层2上沉积a-Si非晶硅薄膜层3，如图2所示，并对该非晶硅薄膜层3进行激光晶化处理，使其形成P-Si多晶硅薄膜层6，如图3所示，之后进行构图工艺，形成TFT开关5的有源层4。
在进行低温多晶硅固化过程中，先在图2中的玻璃基板1的缓冲层2上沉积非晶硅薄膜层3，然后对该非晶硅薄膜层3进行激光退火晶化处理，以形成多晶硅薄膜层6，如图3所示，以表面粗糙度为50nm厚度的多晶硅为例，表面突起高度可达10～20nm，表面突起的原因在于溶化后的熔融硅密度2.53g/cm3较高的密度。而固态硅的密度为2.3g/cm3，在激光照射的瞬间，晶粒由晶核开始横向生长，此时固化过程随着固液界面的移动进行。
由于固化硅的密度较小，因此多余的体积被挤至尚未固化的区域，因此，当多晶硅固化过程完成后，相邻的两颗晶粒挤压在一起形成晶界，而多余的体积在晶界堆积形成突起，如图3所示，在多晶硅薄膜层6上，特别是随着晶粒尺寸的增加，经由三颗晶界的地方相撞形成的突起更加明显，由此会严重影响到阵列基板上TFT特性。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是如何改善非晶硅激光退火过程中多余的多晶硅的体积被挤压而形成突起的晶界。
（二）技术方案
为了解决上述技术问题，本发明提供的一种阵列基板的制备方法，其包括以下步骤：
在衬底基板上沉积非晶硅薄膜层；
对所述非晶硅薄膜层进行构图工艺以在所述非晶硅薄膜层的表面形成具有多个小孔的图形。
进一步地，
所述在衬底基板上沉积非晶硅薄膜层之前，还包括；
在衬底基板上沉积缓冲层。
进一步地，
对所述非晶硅薄膜层进行构图工艺以在所述非晶硅薄膜层的表面形成具有多个小孔的图形，之后还包括：
对所述非晶硅薄膜层进行激光退火处理以形成多晶硅薄膜层。
进一步地，对所述非晶硅薄膜层进行构图工艺以在所述非晶硅薄膜层的表面形成多个小孔的图形，其步骤具体为：
在所述非晶硅薄膜层的表面涂覆光刻胶层，对所述光刻胶层进行曝光显影，使所述光刻胶层形成完全保留区域和完全去除区域，所述完全去除区域对应非晶硅薄膜层的表面待形成的多个小孔，
通过第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形。
进一步地，
所述通过第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形，具体包括：
通过第一刻蚀工艺部分刻蚀掉或者全部刻蚀掉所述光刻胶层的完全去除区域对应的非晶硅薄膜层，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形。
进一步地，
通过所述第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形，之后还包括：
通过第二刻蚀工艺部分刻蚀掉所述光刻胶层的完全去除区域对应的非晶硅薄膜层下面的缓冲层，以在所述缓冲层上形成与所述非晶硅薄膜层上的小孔对应的孔洞。
进一步地，在所述非晶硅薄膜层的表面，每平方毫米形成500-4000个小孔。
本发明还提供一种阵列基板，其包括衬底基板和形成在所述衬底基板上的非晶硅薄膜层，所述非晶硅薄膜层的表面具有多个小孔的结构。
进一步地，所述非晶硅薄膜层的小孔的深度小于或等于所述非晶硅薄膜层的厚度。
进一步地，所述非晶硅薄膜层和衬底基板之间形成有缓冲层，所述缓冲层上与所述非晶硅薄膜层表面的小孔相对的位置形成有孔洞。
本发明还提供一种显示装置，其包括上述的阵列基板。
（三）有益效果
上述技术方案所提供的一种阵列基板及其制备方法、显示装置，在衬底基板上沉积非晶硅薄膜层，并对该非晶硅薄膜层进行构图工艺以在非晶硅薄膜层的表面形成具有多个小孔的结构，由此，在进行非晶硅激光退火处理时，溶化后的熔融硅先填充小孔的空间，从而改善由于多余的多晶硅的体积被挤压而形成突起的晶界。
附图说明
图1是现有技术TFT阵列基板的结构示意图；
图2是现有技术中沉积非晶硅薄膜层后的阵列基板的结构示意图；
图3是现有技术中在非晶硅激光退火处理后阵列基板的局部结构示意图；
图4是本发明实施例一中对光刻胶层刻蚀后的阵列基板的结构示意图；
图5是本发明实施例一中对非晶硅薄膜层刻蚀后的阵列基板的结构示意图；
图6是本发明实施例一中非晶硅激光退火处理后的阵列基板的结构示意图；
图7是本发明实施例二中对非晶硅薄膜层刻蚀后的阵列基板的结构示意图；
图8是本发明实施例二中非晶硅激光退火处理后的阵列基板的的结构示意图。
其中，1/10、衬底基板；2/20、缓冲层；21、SiNx层；22、SiOx层；23、孔洞；3/30、非晶硅薄膜层；31、小孔；4、有源层；40、光刻胶层；41、完全去除区域；42、完全保留区域；5、TFT开关；6/60、多晶硅薄膜层。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
实施例一
如图5所示，本发明实施例的一种阵列基板，其包括衬底基板10和形成在衬底基板10上的非晶硅薄膜层30，该非晶硅薄膜层30的表面具有多个小孔31的结构。需要指出的是，该阵列基板未经过激光退火处理。
其中，非晶硅薄膜层30的小孔31的深度可以小于或等于非晶硅薄膜层30的厚度。优选地，非晶硅薄膜层30和衬底基板10之间形成有缓冲层20。
本发明实施例的阵列基板的制备方法，在衬底基板10上沉积非晶硅薄膜层30；并对该非晶硅薄膜层30进行构图工艺以在非晶硅薄膜层30的表面形成具有多个小孔31的结构。
本发明实施例的衬底基板10可由玻璃、石英、透明树脂等材质制成。
在衬底基板10上沉积非晶硅薄膜层30之前，还包括；在衬底基板10上沉积缓冲层20，并在该缓冲层20上沉积非晶硅薄膜层30。缓冲层20的作用是起到防止有源层被污染的作用。缓冲层20可以包括SiOx层22和SiNx层21，SiNx层21位于衬底基板10和SiOx层22之间，非晶硅薄膜层30形成在SiOx层22上。
本实施例非晶硅薄膜层30的多个小孔31结构的形成方法，具体包括：在非晶硅薄膜层30的表面涂覆光刻胶层40，再利用掩模板，并采用具有一定波长的光进行照射，对该光刻胶层40进行曝光显影，使光刻胶层40形成完全保留区域42和完全去除区域41，如图4所示，完全去除区域41对应非晶硅薄膜层30的表面待形成的多个小孔31，通过第一刻蚀工艺对光刻胶层40的完全去除区域41对应的非晶硅薄膜层进行刻蚀，以在非晶硅薄膜层30的表面形成具有多个小孔31的结构，如图5所示。
第一刻蚀工艺可以为干法刻蚀或者湿法刻蚀工艺，采用刻蚀工艺将没有光刻胶保护的非晶硅薄膜层刻蚀掉，以在非晶硅薄膜层30的表面得到多个小孔31的结构。
对非晶硅薄膜层进行构图工艺以在所述非晶硅薄膜层30的表面形成具有多个小孔31的图形，之后还包括：对非晶硅薄膜层30进行激光退火处理以形成多晶硅薄膜层60，如图6所示。需要指出的是，在对非晶硅薄膜层进行激光退火处理以形成多晶硅薄膜层之前还需要剥离光刻胶层，以利用激光对非晶硅材料进行退火处理。
本发明实施例在通过第一刻蚀工艺对光刻胶层40的完全去除区域41对应的非晶硅薄膜层进行刻蚀的过程中，可部分或全部刻蚀光刻胶层40的完全去除区域41中的非晶硅薄膜层，以在非晶硅薄膜层30的表面形成小孔31的图形，图5中示出的是对光刻胶层40的完全去除区域41中对应的非晶硅薄膜层进行部分刻蚀的情况。
在进行激光退火处理过程中，虽然溶化后的熔融硅具有较高的密度2.53g/cm3，但是由于小孔31为中空结构，溶化后膨胀的液体可以填充非晶硅薄膜层30表面的小孔31的空间，从而避免了经过激光退火处理之后，由于多余多晶硅的体积被挤压而形成的比较大突起的晶界的缺陷，如图6所示，该多晶硅薄膜层60并没有明显的突起。
在非晶硅薄膜层30的表面上，每平方毫米形成500-4000个小孔31，每个通孔的直径为1-8微米。优选地，非晶硅薄膜层30的小孔31的直径为4或5微米。
实施例二
如图7所示，本发明实施例的阵列基板，其与实施例一的阵列基板的区别仅在于：非晶硅薄膜层30的小孔31的深度等于非晶硅薄膜层30的厚度，且在非晶硅薄膜层30下面的缓冲层20上与非晶硅薄膜层30表面的小孔31相对的位置形成有孔洞23。
本发明实施例的阵列基板所对应的制备方法与实施例一的制备方法的区别仅在于，在通过第一刻蚀工艺对光刻胶层40的完全去除区域41对应的非晶硅薄膜层进行刻蚀的过程，全部刻蚀掉光刻胶层40的完全去除区域41中对应的非晶硅薄膜层，以在非晶硅薄膜层30的表面形成小孔31，同时，通过第二刻蚀工艺部分刻蚀掉光刻胶层40的完全去除区域对应的非晶硅薄膜层下面的缓冲层20，以在缓冲层20上形成与非晶硅薄膜层上的小孔对应的孔洞23，如图7所示。优选地，第二刻蚀工艺为干法刻蚀工艺。
本实施例通过将光刻蚀层40的完全去除区域41中对应的非晶硅薄膜层全部刻蚀，甚至部分刻蚀非晶硅薄膜层30下面的缓冲层20，这样，在激光溶化后，虽然溶化后的熔融硅具有较高的密度2.53g/cm3，但溶液会填充缓冲层的孔洞23，如果该空洞23容纳不下也可以填充到非晶硅薄膜层的小孔31，缓冲层的孔洞23的溶液会先固化，形成晶核，从而避免由于多余多晶硅的体积被挤压而形成的比较大突起的晶界，可控制晶体的生长，进而形成密度均匀分布且的多晶硅，如图8所示。
由于缓冲层20包括SiOx层22和SiNx层21，SiNx层21位于衬底基板10和SiOx层22之间，非晶硅薄膜层30形成在SiOx层22上，对缓冲层20刻蚀所产生的孔洞23位于SiOx层22。
本发明还提供一种显示装置，其包括上述任一实施例所提供的阵列基板。
本发明的阵列基板及其制备方法、显示装置，在衬底基板上沉积非晶硅薄膜层；并对该非晶硅薄膜层进行构图工艺以在非晶硅薄膜层的表面形成具有多个小孔的结构，由此，在进行非晶硅激光退火处理时，溶化后的熔融硅先填充小孔的空间，从而改善由于多余多晶硅的体积被挤压而形成突起的晶界。
综上，本发明的优选实施例主要产生的效果具体为：
1、通过部分或完全刻蚀掉光刻蚀层的完全去除区域中对应的非晶硅薄膜层，以在非晶硅薄膜层的表面形成具有多个小孔的图形，这样，虽然溶化后的熔融硅具有较高的密度，可达到2.53g/cm3，但是由于非晶硅薄膜层的小孔为中空结构，溶化后膨胀的液体可以填充小孔的空间，从而改善由于多余多晶硅的体积被挤压而形成的突起的晶界；
2、通过完全刻蚀掉光刻蚀层的完全去除区域中对应的非晶硅薄膜层，甚至部分刻蚀非晶硅薄膜层下面的缓冲层中的氧化硅，以在该缓冲层上形成空洞，这样，在激光溶化后，溶液会填充氧化硅孔洞，孔洞的溶液会先固化，从而形成晶核，控制晶体的生长，从而避免由于多余多晶硅的体积被挤压而形成的比较大突起的晶界，进而形成密度均匀分布且的多晶硅层。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (6)

1.一种阵列基板的制备方法，其特征在于，包括以下步骤：
进行激光退火处理之前在衬底基板上沉积等厚度的非晶硅薄膜层；
对所述非晶硅薄膜层进行构图工艺使得所述非晶硅薄膜层的表面形成具有多个小孔的图形；
对所述形成有多个小孔的非晶硅薄膜层进行激光退火处理，使得所述非晶硅薄膜层形成厚度不均匀的多晶硅薄膜层。
2.如权利要求1所述的制备方法，其特征在于，
所述在衬底基板上沉积非晶硅薄膜层之前，还包括：
在衬底基板上沉积缓冲层。
3.如权利要求1所述的制备方法，其特征在于，对所述非晶硅薄膜层进行构图工艺使得所述非晶硅薄膜层的表面形成多个小孔的图形，包括：
在所述非晶硅薄膜层的表面涂覆光刻胶层，对所述光刻胶层进行曝光显影，使所述光刻胶层形成完全保留区域和完全去除区域，所述完全去除区域对应非晶硅薄膜层的表面待形成的多个小孔，
通过第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形。
4.如权利要求3所述的制备方法，其特征在于，
所述通过第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形，具体包括：
通过第一刻蚀工艺部分刻蚀掉或者全部刻蚀掉所述光刻胶层的完全去除区域对应的非晶硅薄膜层，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形。
5.如权利要求4所述的制备方法，其特征在于，
通过所述第一刻蚀工艺对所述光刻胶层的完全去除区域对应的非晶硅薄膜层进行刻蚀，以在所述非晶硅薄膜层的表面形成具有多个小孔的图形，之后还包括：
通过第二刻蚀工艺部分刻蚀掉所述光刻胶层的完全去除区域对应的非晶硅薄膜层下面的缓冲层，以在所述缓冲层上形成与所述非晶硅薄膜层上的小孔对应的孔洞。
6.如权利要求1-5任一项所述的制备方法，其特征在于，在所述非晶硅薄膜层的表面，每平方毫米形成500-4000个小孔。
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