CN103869867B - 一种斩波带隙基准电路 - Google Patents
一种斩波带隙基准电路 Download PDFInfo
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- CN103869867B CN103869867B CN201410077443.0A CN201410077443A CN103869867B CN 103869867 B CN103869867 B CN 103869867B CN 201410077443 A CN201410077443 A CN 201410077443A CN 103869867 B CN103869867 B CN 103869867B
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CN103869867A CN103869867A (zh) | 2014-06-18 |
CN103869867B true CN103869867B (zh) | 2015-06-03 |
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Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104111683B (zh) * | 2014-06-27 | 2016-04-20 | 成都嘉纳海威科技有限责任公司 | 一种带自动消除运放失调功能的基准源 |
CN104111684A (zh) * | 2014-07-14 | 2014-10-22 | 深圳市科创达微电子有限公司 | 开关控制低失调电压的带隙基准电路 |
CN105807827B (zh) * | 2014-12-02 | 2017-08-11 | 奕力科技股份有限公司 | 斩波稳定的带隙电压基准电路 |
GB2539446A (en) * | 2015-06-16 | 2016-12-21 | Nordic Semiconductor Asa | Start-up circuits |
US10082819B2 (en) * | 2015-10-26 | 2018-09-25 | Marvell World Trade Ltd. | Switched-capacitor bandgap reference circuit using chopping technique |
CN105337616B (zh) * | 2015-12-04 | 2018-11-20 | 上海兆芯集成电路有限公司 | 数字转模拟转换器以及高压容差电路 |
CN105912064B (zh) * | 2016-04-25 | 2018-02-27 | 华中科技大学 | 一种高精度高电源抑制比的带隙基准源 |
CN105824349A (zh) * | 2016-05-26 | 2016-08-03 | 上海巨微集成电路有限公司 | 自校准带隙基准电路、带隙基准电压自校准系统和方法 |
CN107526386A (zh) * | 2017-08-28 | 2017-12-29 | 天津大学 | 具有高电源抑制比的参考电压源 |
CN108634949B (zh) * | 2018-05-16 | 2020-09-15 | 西安电子科技大学 | 斩波仪表放大器的直流失调校准电路 |
CN109298745A (zh) * | 2018-10-12 | 2019-02-01 | 广州智慧城市发展研究院 | 同步实现线性稳压与双电压域基准电流源的电路及方法 |
CN111026226B (zh) * | 2019-12-11 | 2021-06-11 | 南京中感微电子有限公司 | 一种电压调节器 |
CN110825154B (zh) * | 2019-12-11 | 2021-01-19 | 南京中感微电子有限公司 | 一种自动消除输入失调电压的基准电压源及其方法 |
CN113126689B (zh) * | 2019-12-31 | 2022-10-14 | 圣邦微电子(北京)股份有限公司 | 直流修调模块及采用直流修调的带隙基准电路 |
RU2723087C1 (ru) * | 2020-02-25 | 2020-06-08 | Вадим Георгиевич Прокопенко | Генератор хаотических колебаний |
CN112234946B (zh) * | 2020-10-29 | 2023-04-28 | 电子科技大学 | 一种开关电容放大器 |
CN112558668B (zh) * | 2020-12-08 | 2022-05-20 | 大连民族大学 | 一种基于斩波技术的ldo电路 |
CN113917971B (zh) * | 2021-11-05 | 2023-01-31 | 澳门大学 | 电流模带隙基准电压源的校准电路 |
CN114167931B (zh) * | 2021-12-04 | 2023-02-17 | 恒烁半导体(合肥)股份有限公司 | 一种可快速启动的带隙基准电压源及其应用 |
CN114826188A (zh) * | 2022-05-11 | 2022-07-29 | 江苏集萃智能集成电路设计技术研究所有限公司 | 陷波滤波器、滤波方法及带隙基准电压产生电路 |
CN114740936B (zh) * | 2022-06-10 | 2022-09-16 | 南京浣轩半导体有限公司 | 一种失调消除的带隙基准电路 |
CN115268555B (zh) * | 2022-07-27 | 2024-05-28 | 成都振芯科技股份有限公司 | 一种二阶温度补偿带隙基准电压电路及差分电路 |
CN115599155B (zh) * | 2022-12-05 | 2023-03-10 | 深圳市微源半导体股份有限公司 | 带隙基准电路 |
CN116382402B (zh) * | 2023-03-21 | 2024-01-12 | 辰芯半导体(深圳)有限公司 | 带隙基准电压产生电路和集成电路 |
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US6462612B1 (en) * | 2001-06-28 | 2002-10-08 | Intel Corporation | Chopper stabilized bandgap reference circuit to cancel offset variation |
CN101458540A (zh) * | 2007-12-14 | 2009-06-17 | 凌阳科技股份有限公司 | 一种带隙基准电压电路 |
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CN103488232A (zh) * | 2013-09-30 | 2014-01-01 | 深圳市芯海科技有限公司 | 一种基于cmos工艺的斩波带隙基准电路及参考电压芯片 |
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US7683701B2 (en) * | 2005-12-29 | 2010-03-23 | Cypress Semiconductor Corporation | Low power Bandgap reference circuit with increased accuracy and reduced area consumption |
US7961041B2 (en) * | 2008-05-15 | 2011-06-14 | Infineon Technologies Ag | System and method for generating a reference voltage |
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2014
- 2014-03-04 CN CN201410077443.0A patent/CN103869867B/zh active Active
Patent Citations (4)
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US6462612B1 (en) * | 2001-06-28 | 2002-10-08 | Intel Corporation | Chopper stabilized bandgap reference circuit to cancel offset variation |
CN101458540A (zh) * | 2007-12-14 | 2009-06-17 | 凌阳科技股份有限公司 | 一种带隙基准电压电路 |
CN102200796A (zh) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | 一种低失调低噪声斩波稳定的带隙基准源电路 |
CN103488232A (zh) * | 2013-09-30 | 2014-01-01 | 深圳市芯海科技有限公司 | 一种基于cmos工艺的斩波带隙基准电路及参考电压芯片 |
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Denomination of invention: Chopped wave band-gap reference circuit Effective date of registration: 20170929 Granted publication date: 20150603 Pledgee: National integrated circuit industry investment fund, Limited by Share Ltd Pledgor: VeriSilicon Holdings Co., Ltd.|VeriSilicon Microelectronics (Shanghai) Co., Ltd.|VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD.|VeriSilicon Microelectronics (Beijing) Co., Ltd. Registration number: 2017990000922 |
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Date of cancellation: 20190415 Granted publication date: 20150603 Pledgee: National integrated circuit industry investment fund, Limited by Share Ltd Pledgor: VeriSilicon Holdings Co., Ltd.|VeriSilicon Microelectronics (Shanghai) Co., Ltd.|VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD.|VeriSilicon Microelectronics (Beijing) Co., Ltd. Registration number: 2017990000922 |
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Address after: Zhangjiang Building 20A, 289 Chunxiao Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai Co-patentee after: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee after: Xinyuan Microelectronics (Shanghai) Co., Ltd. Co-patentee after: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee after: Core holdings limited company Address before: 201203 Zhangjiang Building 20A, 560 Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Co-patentee before: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee before: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Co-patentee before: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee before: VeriSilicon Holdings Co., Ltd. |