CN103828049A - 包含具有不同的少数载流子寿命的沟道区域的设备及方法 - Google Patents

包含具有不同的少数载流子寿命的沟道区域的设备及方法 Download PDF

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Publication number
CN103828049A
CN103828049A CN201280046388.8A CN201280046388A CN103828049A CN 103828049 A CN103828049 A CN 103828049A CN 201280046388 A CN201280046388 A CN 201280046388A CN 103828049 A CN103828049 A CN 103828049A
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CN
China
Prior art keywords
region
channel region
type
lengthening
heavy doping
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Pending
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CN201280046388.8A
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English (en)
Chinese (zh)
Inventor
保罗·泰萨罗
奥雷柳·贾恩卡洛·毛里
合田晃
赵一杰
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Micron Technology Inc
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Micron Technology Inc
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Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of CN103828049A publication Critical patent/CN103828049A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN201280046388.8A 2011-08-16 2012-08-14 包含具有不同的少数载流子寿命的沟道区域的设备及方法 Pending CN103828049A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/211,033 US8742481B2 (en) 2011-08-16 2011-08-16 Apparatuses and methods comprising a channel region having different minority carrier lifetimes
US13/211,033 2011-08-16
PCT/US2012/050796 WO2013025719A2 (en) 2011-08-16 2012-08-14 Apparatuses and methods comprising a channel region having different minority carrier lifetimes

Publications (1)

Publication Number Publication Date
CN103828049A true CN103828049A (zh) 2014-05-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280046388.8A Pending CN103828049A (zh) 2011-08-16 2012-08-14 包含具有不同的少数载流子寿命的沟道区域的设备及方法

Country Status (7)

Country Link
US (2) US8742481B2 (https=)
EP (1) EP2745321A4 (https=)
JP (1) JP5877246B2 (https=)
KR (1) KR102044045B1 (https=)
CN (1) CN103828049A (https=)
TW (1) TWI538165B (https=)
WO (1) WO2013025719A2 (https=)

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US9214235B2 (en) * 2013-04-16 2015-12-15 Conversant Intellectual Property Management Inc. U-shaped common-body type cell string
SG10201803464XA (en) 2017-06-12 2019-01-30 Samsung Electronics Co Ltd Semiconductor memory device and method of manufacturing the same
US10727244B2 (en) 2017-06-12 2020-07-28 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of fabricating the same
US10923493B2 (en) 2018-09-06 2021-02-16 Micron Technology, Inc. Microelectronic devices, electronic systems, and related methods
CN112956030A (zh) 2018-10-09 2021-06-11 美光科技公司 包含具有增加阈值电压的晶体管的半导体装置及其相关方法与系统

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Publication number Publication date
JP2014522131A (ja) 2014-08-28
WO2013025719A2 (en) 2013-02-21
TW201316489A (zh) 2013-04-16
US9190472B2 (en) 2015-11-17
US20130043505A1 (en) 2013-02-21
US20140264447A1 (en) 2014-09-18
WO2013025719A3 (en) 2013-05-02
EP2745321A2 (en) 2014-06-25
KR102044045B1 (ko) 2019-12-02
JP5877246B2 (ja) 2016-03-02
EP2745321A4 (en) 2015-04-01
US8742481B2 (en) 2014-06-03
KR20140068061A (ko) 2014-06-05
TWI538165B (zh) 2016-06-11

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