CN103824783A - 包封晶片级芯片规模(wlcsp)基座封装 - Google Patents
包封晶片级芯片规模(wlcsp)基座封装 Download PDFInfo
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Abstract
根据示例实施例,提供了一种组装以防止机械损坏的半导体器件。该半导体器件包括在上表面设置的有源电路和向有源电路提供电连接的接触区域。基座结构,有源电路在下表面安装在该基座结构上;该基座结构的面积小于有源器件的面积。由模塑料构成的包封包围有源器件的侧面和下表面并包围接触区域。包封提供保护有源器件免受机械损坏的弹性表面。实施例的特征在于接触区域上可以设置焊料块。
Description
相关申请的交叉引用
本申请要求2012年10月1日递交的美国临时申请No.61/708,188和2013年5月22日递交的美国临时申请61/826,307的优先权,其全部内容通过引用合并于此。
技术领域
本发明的实施例涉及半导体器件封装,更具体地涉及具有使用晶片级芯片规模处理(WLCSP)封装增强产品的制造能力和质量的改进的WLCSP封装。
背景技术
电子工业持续依赖于半导体技术的进步以在更紧凑面积中实现更高功能的器件。对于很多应用,实现更高功能的器件需要将大量电子器件集成在单个硅晶片中。随着硅晶片的每给定面积的电子器件的数量增加,制造工艺变得更加困难。
IC器件的封装在其最终性能中扮演着越来越重要的角色。例如,在移动设备(即,移动电话、平板电脑、膝上型电脑、遥控器等)中的组装中使用WLCSP组件。WLCSP组件节约了移动设备中的宝贵空间。在组装之后,在一些示例工艺中,消费者通过喷射模塑或加装外壳来包封这些WLCSP器件。WLCSP的该手工后处理可能导致器件损坏。因此,在接收产品以组装到他的移动设备之前,消费者可能更愿意WLCSP产品被不易碎材料包围,这避免了裸片本身的损坏。
需要能够解决由对于移动应用的需要而产生的挑战的WLCSP组装工艺。
发明内容
已经发现本公开可以用于在便携式电子设备中使用的半导体器件的封装。具体而言,作为未封装裸片向移动设备制造商提供WLCSP产品,移动设备制造商随后将这些器件直接包封在印刷电路板上(以节约移动设备中的宝贵空间),这些未封装裸片可能遭受粗暴操作。该操作可能导致在移动设备到达最终用户之前不会表现出来的破裂或其他潜在损坏。
未封装裸片被包封在弹性材料中,所述弹性材料例如是环氧树脂模塑料,其吸收移动设备组装期间手工操作的震动。该工艺也可用于具有或不具有焊料块的CSP。
在示例实施例中,一种用于组装其上设置有焊料球的晶片级芯片规模基座(WLCSP)器件的方法包括根据WLCSP器件裸片厚度和表面积设置基座安装条带,所述基座安装条带具有上表面和下表面。该安装条带由模塑料制成;该基座安装条带在上表面具有基座的格栅,每个格栅基座的表面积小于WLCSP器件的下表面的表面积。WLCSP器件是附着到每个格栅基座的表面上的裸片,WLCSP器件在每个格栅基座上形成悬置部分。基座安装条带上的每个WLCSP器件都被包封。该工艺确保了包封材料包围WLCSP器件并流到每个WLCSP器件的悬置部分之下。
在另一示例实施例中,组装半导体器件以防止机械损坏,该半导体器件包括在具有上表面上设置的焊料块的有源电路,这些焊料块提供到该有源电路的电连接。该有源电路的下表面安装到基座结构,基座结构的面积小于有源电路的面积。由模塑料构成的包封包围有源电路的这些侧面和下表面,并且包围焊料球。包封提供了保护有源电路免受机械损坏的弹性表面。
在示例实施例中,一种用于组装其上设置有接触区域的WLCSP半导体器件的方法包括根半导体器件裸片厚度和表面积设置基座安装条带,所述基座安装条带具有上表面和下表面。该安装条带由模塑料制成,该基座安装条带在上表面具有基座的格栅,每个格栅基座的表面积小于半导体器件的下表面的表面积。半导体器件是附着到每个格栅基座的表面上的裸片,半导体器件在每个格栅基座上形成悬置部分。 利用释放箔在包封每个WLCSP器件之前保护接触区域。基座安装条带上的每个半导体器件都被包封,用户确保包封材料包围半导体器件并流到每个半导体器件的悬置部分之下。在包封每个WLCSP器件之后,去除释放箔。在基座安装条带的下表面相应位置处标记每个半导体器件。
在另一示例实施例中,提供了一种用于组装基于晶片衬底的晶片级芯片规模基座(WLCSP)器件的方法,所述晶片衬底具有前表面和相反的后表面,在所述前表面上,在有源器件裸片上设置了焊料块。该方法包括:在所述前表面上贴附保护带;在与有源器件裸片的锯线相对应的区域中,在晶片衬底的后表面上以第一切口的V形刀片进行切割,切割深度为晶片衬底厚度的约50%;以第二较小切口的刀片继续切割所述后表面,以将有源器件裸片分离为分离的器件裸片,其中每个分离的器件裸片具有相对于器件裸片的垂直面的成角度凹陷轮廓;将分离的器件裸片在其前表面重新安装到切割带;将分离的器件裸片裸片键合到基座阵列,所述基座阵列的上表面具有用于每个分离的器件裸片的后表面的预定安装位置,所述基座阵列的间距大于器件裸片的间距;并且包封基座阵列上的每个分离的器件裸片,包封材料包裹WLCSP器件并流到每个WLCSP器件的成角度凹陷下方。
本公开的以上摘要并不意图表示本发明的每个所公开的实施例或每个方面。在附图和以下详细描述中提供了其他方面和实施例。
附图说明
结合附图考虑本发明的各个实施例的以下详细描述,可以更完整地理解本发明,在附图中:
图1是根据本公开实施例的流程图;
图2A-2E示出了根据示例实施例的示例WLCSP器件的组装;
图3A-3C示出了根据本公开用于组装WLCSP器件的基座条带的实施例;
图4A-4C示出了使用图3A-3C的基座条带组装的器件;
图5是根据本公开的另一实施例的流程图;
图6A-6F示出了根据本公开实施例在示例WLCSP器件中的基座设置;
图7A-7B示出了对多个图6F所示的WLCSP器件裸片施加保护材料;以及
图8A-8C示出了施加到图6F的器件裸片上的保护材料的三种示例配置。
可以对本发明做出各种修改和替换形式,其细节以示例形式在附图中示出并将被详细描述。但是应当理解,本发明不限于所描述的具体实施例。相反,所附权利要求限定的本发明的精神和范围意图覆盖所有修改、等同物和替换方案。
具体实施方式
已经发现所公开的实施例可用于防止晶片级芯片规模基座(WLCSP)器件在其组装期间的损坏。该工艺通过将器件包封在弹性材料中来为硅器件提供机械保护。这种工艺可以集成到通常的后端组装中。
在示例实施例中,用户取用具有器件的晶片衬底。该晶片经历电测试(例如E-sort)以挑选出失效器件,其他工艺也可以经历E-sort并在封装之后挑选出失效器件。将测试过的晶片安装在粘性带上。使用合适的模塑设备,将环氧树脂模塑料(EMC)形成为具有基座的条带。形成的基座的尺寸(即大小、高度等)小于WLCSP器件的尺寸,并且依赖于具体的WLCSP产品。因此,WLCSP器件在其下侧将具有悬置边缘。该悬置有助于产品器件周围的包封材料的流动,并且向密封器件的五或六侧的保护包封材料提供了具有增强强度的锚定。使用适当的裸片键合技术将单个器件裸片安装到基座。在安装器件裸片之后,对基座条带进行包塑(over-molded);模塑料可以与用于形成基座条带的材料相同或不同。在一些WLCSP器件中,可以在器件上设置焊料块并且使用箔辅助(foil-assisted)设备保护所述焊料块。在被包封材料密封之后,可以在与具有焊料块的一侧相反的一侧对WLCSP产品器件添加激光标记。在密封器件的标记侧设置切割带,然后切割 并分离产品器件。
在另一示例实施例中,可以在器件本身中形成基座。在研磨带上安装具有器件裸片的晶片。利用第一刀片,具有有源器件的晶片在围绕有源器件的锯线的X和Y方向上具有在晶片的后侧上设置的V形切割标记。利用第二刀片,有源器件被锯开,从V形切口留下的位置继续第二刀片的切割。给定器件裸片在其垂直面上具有基座轮廓。将由金属、封装EMC或其他合适材料制成的条带制造为使得其间距略大于器件裸片的尺寸;形成基座位置的格栅。基座形状增强了产品周围包封材料的流动,并且特定于WLCSP的基座形状(即大小、高度等)提供了针对5或6侧包封的增强的包封材料锚定。在基座位置的格栅上安装并包封分离的器件。在包封之后,将器件切割为分离的在五或六侧被弹性保护材料包围的独立器件。
参考图1。在根据本公开的示例实施例中,在切割带上安装已经历电测试的晶片100。通过电测试的WLCSP器件被分割(即“分离”)并放置在临时容器(例如“晶片包”)中以供以后使用110。将环氧树脂模塑料(EMC)或其他合适材料的条带形成为基座格栅120。基座的大小/高度由WLCSP器件的尺寸决定130。对于移动应用,WLCSP器件尺寸的大小/高度必须考虑给定便携电子设备中可用的有限空间。在形成基座格栅120之后,利用合适的材料在基座表面上安装分离的WLCSP器件140。安装材料可以包括但不限于晶片背面涂层(WBC)、裸片附着膜(DAF)、或环氧树脂。利用合适的设备,用合适的材料对基座条带进行包塑;可以使用箔辅助(即释放膜技术)铸模机器来保护使用焊料球的那些器件150。根据给定消费者的要求,可以使用激光或其他合适的技术在条带的下表面标记器件代码160。在被标记的下表面上,在切割带上放置该条带170。分割产品器件180。在进行分离之前才取出焊料球上的保护箔。从切割带去除分割的产品;把产品放置在适当的(即经JEDEC批准等的)托盘中190。器件经历最终电测试、打包、并运送到最终用户195。
参考图2A-2B。用环氧树脂模塑料或其他材料模塑具有基座220的条带210。如果需要背面屏蔽,则可以将有孔条带210或基座模塑 在金属框架或载体230上。该金属载体230可以充当器件240的RF屏蔽。基座的大小和高度由裸片大小和所需最终封装厚度决定。基座220的形状可以是圆形、方形或其他合适形状,例如N边正多边形。
参考图2C。在每个基座220上放置具有焊料球250的器件裸片240;利用合适的裸片附着材料260将器件裸片240附着到基座220。如前所述,裸片附着材料260可以是晶片背面涂层(WVBC)、裸片附着膜(DAF)、或环氧树脂。裸片附着材料260的类型由具体工艺参数控制,也可以将行业中其他合适类型的裸片附着材料应用于本公开。
参考图2D。在将器件裸片240附着到基座220之后,用释放箔280保护焊料球250。包塑270包围器件裸片240。由于器件裸片240的尺寸大于基座的尺寸并且形成悬置,因此包塑料包围器件裸片240并包裹悬置结构。器件裸片240下方的悬置结构充当为模塑料提供增强的机械强度的锚。该模塑料可以与形成有孔条带210时使用的模塑料相同,也可以是不同材料。
参考图2E,去除释放箔280。将具有包塑器件240的有孔条带210放置在粘性涂层切割带290上。晶片锯55将器件240切割到从焊料球250到切割带290的粘性侧的深度。器件240被分割成单个器件。
在另一示例实施例中,可以将金属基座放置在金属条带上。在另一示例实施例中,可以将基座制造为金属条带上一体。在另一示例实施例中,可以将基座冲压入金属条带中。参考图3A。在示例实施例中,可以用其上设置有基座440的金属条带来代替具有图2A中使用的基座那样的基座420的基座条带410(参考图3B)。金属条带430可以具有集成设置(即形成、冲压、挤压成型)的基座440。
参考图3C,在另一示例实施例中,可以用环氧树脂模塑料(EMC)或其他合适的聚合物材料模塑基座条带450,并且在基座条带450上设置基座460;或者在另一示例中,基座条带450可以是其上设置有聚合物基座460的金属。在这些示例的每一个中,基座之间的间隔(WPS)425、445、455、基座高度T2、以及基座厚度(T3)由产品器件裸片和最终用户的需求决定。表1示出了这些基座条带的示例尺寸。在示例实施例中,T2的范围可以是从0.05mm到约0.2mm。T3取决于最终 总厚度或屏蔽需求;T3的范围也可以在约0.05mm到约0.2mm之间。在基座条带中使用金属将充当组装器件的电屏蔽。
图4A-4C示出了根据前面讨论的组装器件裸片。图4A示出了在图3A的基座条带上安装和包封的器件裸片470。器件裸片470安装在环氧树脂模塑料(EMC)或等同材料的基座475上;器件裸片470包封在附加的模塑料480中。图4B示出了在图3B的基座条带上安装和包封的器件裸片470'。器件裸片470'安装在金属基座475'上;在附加的模塑料480'中包封器件裸片470'。图4C示出了在图3C的基座条带上安装的器件裸片470”。基座475”具有安装在金属衬底上的模塑基座;在附加的模塑料480”中包封器件裸片470”。
图4A-4C的尺寸线示出了安装在三个示例基座条带上的示例器件的测量值。参考表2得到一些器件裸片大小的一些示例尺寸。
注意,WL是基于所使用的不同分离锯片而可变的,因此可以获得较宽的范围(如表1所示),排除制造公差,该范围是约125μm到约250μm。
在根据本公开的另一示例实施例中,可以将器件裸片制造为具有集成设置在其结构中的基座。参考图5。已经历后研磨的晶片在晶片的前表面上具有施加到有源器件裸片的电连接区域的焊料块。具有焊料块的晶片安装在保护带的前表面505(保护带保护焊料块在后续加工期间免受潜在损坏)。利用第一切口的V形锯片(或具有斜面切割边缘轮廓的锯片),在与有源器件裸片之间的锯线相对应的位置处切割晶片的后表面510;切割宽度是晶片厚度的约50%。在其他工艺中,可以使用其他形状的刀片。在示例工艺中,利用红外摄像机(IR)或其他合适的成像系统来瞄准位置。利用具有直轮廓和比第一切口窄的第二切口的锯片,将器件裸片割开515。分隔割开的裸片520。准备针对给定器件裸片的尺寸(即厚度、面积等)定制的基座条带525。利用合适的材料将分隔的器件裸片的后表面裸片键合到基座上表面535。合适的材料可以包括但不一定限于胶、共熔裸片附着剂、焊料等。用于裸片键合的合适材料将由所使用的基座条带材料决定。通过利用箔辅助模塑设备进行包塑处理,将基座条带上的键合器件裸片包封在弹性模塑料中540。箔辅助模塑设备保护焊料块免受损坏。在基座条带的下面,可以激光刻写器件代码545。具有器件裸片的完成基座条带被放置在切割带上550。产品器件被割开和分隔555。从切割带将产品去除并放入托盘560。可以对产品进行最终测试、打包并运送到最终用 户565。
在另一示例实施例中,可以利用光刻工艺实现V形轮廓。晶片衬底的前表面(包含有源器件)可以保护膜遮蔽。晶片衬底的后表面可以被遮蔽为暴露与有源器件的锯线相对应的区域。利用选择性刻蚀,可以实现与以上讨论的切割工艺获得的相类似的成角度轮廓。刻蚀工艺可以是湿法刻蚀、干法刻蚀、或二者的组合。
参考图6A-6F。一系列截面图示出了基座器件裸片(即“蘑菇”WLCSP)的准备。已经历后研磨的硅晶片610具有已施加焊料块620的有源器件裸片。前侧带630为焊料块620提供保护,免受粗暴操作。利用第一切口的锯片65和倾斜轮廓640(即基座槽),在与有源器件锯线相对应的位置处切割晶片的后表面。利用第二切口(比第一切口窄)的锯片75,将硅晶片610切割为分隔的器件裸片615,每个器件裸片615具有预定数量的焊料块625。现在,分隔的器件裸片615具有包括凹陷645的成角度的轮廓。
在准备具有包括凹陷655的成角度轮廓的基座器件裸片615之后,用户可以在为裸片的后表面提供保护的多个选项中进行选择。
参考图7。可以将多个基座裸片715安装到将最终提供后表面保护的材料730。该材料可以是塑料材料,例如环氧树脂模塑料(EMC),或诸如铜、黄铜、镍、锡等的金属,或者是合金,等等。在另一示例实施例中,保护材料730可以具有可选的第二层740,以制造金属730和模塑料740的复合保护层。参考图7B。模塑料735包封多个器件裸片715。保护膜(未示出)覆盖焊料块在利用模塑料735包封期间免受的损坏。器件裸片715的基座轮廓755提供模塑料735的附加机械锚定。将模塑的多个器件裸片715安装在切割/分割膜750上。合适的切口的锯片85切过模塑料735和保护层730的厚度。多个器件715现在在五侧(后表面和四个垂直面)受保护。在一些示例工艺中,也可以通过使用箔辅助模塑机(FAM)在前表面设置模塑料,并将焊料块部分地推入该膜。在其他工艺中,压模技术可以成功地将模塑料施加到前表面并包围焊料块。
在器件裸片的五个表面提供保护显著地减小了最终用户在建立 其子系统时的组装损坏的可能性。
参考图8A-8C。图中示出了被包封在保护材料中的器件裸片的三个侧面视图。如图8A所示,器件裸片810具有包围垂直面和焊料块侧812以及后表面的模塑料的保护材料835。附加的金属保护层815被层压到后表面侧的模塑料835。如图8B所示,器件815具有包封垂直面和焊料块侧822的模塑料845。在器件裸片815的后表面上是金属保护层855。如图8C所示,器件820仅具有包封垂直面、后表面和焊料块侧832的模塑料865。器件裸片820的后表面仅具有代替金属层730施加的图7A的模塑料740;在另一步骤中施加附加模塑料865。依赖于特定工艺,在备选实施例中,可以针对模塑工艺屏蔽焊料块,因此在最终产品中的焊料块不会被模塑料包围。特定器件裸片尺寸可以控制图8A-8C中所示的示例技术的特征尺寸。表3列出了一些示例器件尺寸及其相应的器件裸片保护。
在不脱离所附权利要求限定的本发明的精神和范围的情况下,本发明的很多其他实施例对于本领域技术人员而言是显而易见的。
Claims (17)
1.一种用于组装其上设置有焊料块的晶片级芯片规模处理WLCSP器件的方法,所述方法包括:
根据WLCSP器件裸片厚度和表面积设置基座安装条带,所述基座安装条带具有上表面和下表面;
用模塑料制成该基座安装条带,该基座安装条带在上表面具有基座的格栅,每个格栅基座的表面积小于WLCSP器件的下表面的表面积;
将WLCSP器件裸片附着到每个格栅基座的表面上,WLCSP器件在每个格栅基座上形成悬置部分;以及
包封基座安装条带上的每个WLCSP器件,并确保包封材料包围WLCSP器件并流到每个WLCSP器件的悬置部分之下。
2.根据权利要求1所述的方法,其中在制造基座安装条带期间,
将金属屏蔽附着到所述下表面。
3.根据权利要求1所述的方法,还包括:
在包封每个WLCSP器件之前,利用释放箔保护焊料块;
在包封每个WLCSP器件之后去除释放箔;以及
在基座安装条带的下表面上的相应位置处标记每个WLCSP器件。
4.根据权利要求3所述的方法,还包括:
分离包封和标记的WLCSP器件。
5.根据权利要求1所述的方法,其中每个格栅基座具有包括至少三个边的正多边形形状。
6.根据权利要求5所述的方法,其中每个格栅基座的形状是矩形、正方形或圆形。
7.根据权利要求1所述的方法,其中基座安装条带包括从环氧树脂模塑料和聚酰亚胺选择的有机成分。
8.一种用于组装其上设置有接触区域的WLCSP半导体器件的方法,该方法包括:
根据半导体器件裸片厚度和表面积设置基座安装条带,所述基座安装条带具有上表面和下表面;
用模塑料制成该基座安装条带,该基座安装条带在上表面具有基座的格栅,每个格栅基座的表面积小于半导体器件的下表面的表面积;
将半导体器件裸片附着到每个格栅基座的表面,半导体器件在每个格栅基座上形成悬置部分;
在包封每个WLCSP器件之前,利用释放箔保护接触区域;
包封基座安装条带上的每个半导体器件,确保包封材料包围半导体器件并流到每个半导体器件的悬置部分之下;
在包封每个WLCSP器件之后,去除释放箔;以及
在基座安装条带的下表面的相应位置处标记每个半导体器件。
9.根据权利要求8所述的方法,其中接触区域包括焊料块、可焊接金属的焊盘设置位置、铜/锡合金。
10.一种组装以防止机械损坏的半导体器件,该半导体器件包括:
在上表面设置的有源电路和向有源电路提供电连接的接触区域;
基座结构,有源电路在下表面安装在该基座结构上,该基座结构的面积小于有源器件的面积;
由包围有源器件的侧面和下表面并包围接触区域的模塑料构成的包封;以及
其中包封提供保护有源器件免受机械损坏的弹性表面。
11.根据权利要求10所述的半导体器件,其中基座结构是从以下选择的:
直接形成在金属条带上并且基座结构与金属条带一体;
基座结构是被放置和附着到金属衬底的独立部件;以及
基座结构是由模塑料形成的。
12.根据权利要求10所述的半导体器件,其中接触区域是焊料块。
13.一种用于组装基于晶片衬底的晶片级芯片规模处理WLCSP器件的方法,所述晶片衬底具有前表面和相反的后表面,在所述前表面上,在有源器件裸片上设置了焊料块,该方法包括:
在所述前表面上施加保护带;
在与有源器件裸片的锯线相对应的区域中,在晶片衬底的后表面上以第一切口的V形刀片进行切割,切割深度为晶片衬底厚度的约50%;
以第二较小切口的刀片继续切割所述后表面,以将有源器件裸片分隔为分离的器件裸片,其中每个分离的器件裸片具有相对于器件裸片的垂直面的成角度凹陷轮廓;
将分离的器件裸片在其前表面重新安装到切割带;
将分离的器件裸片裸片键合到基座阵列,所述基座阵列的上表面具有用于每个分离的器件裸片的后表面的预定安装位置,所述基座阵列的间距大于器件裸片的间距;以及
包封基座阵列上的每个分离的器件裸片,包封材料包裹WLCSP器件并流到每个WLCSP器件的成角度凹陷下方。
14.根据权利要求13所述的方法,还包括与器件裸片位置相对应对基座阵列的下表面进行激光标记。
15.根据权利要求14所述的方法,还包括将具有包封的器件裸片的基座条带放置在切割带上,并将包封的器件切割为分隔的产品器件。
16.根据权利要求13所述的方法,其中通过以下来限定成角度凹陷轮廓:
利用保护膜遮蔽晶片衬底的前表面;
在与有源器件的锯线相对应的区域中,对晶片衬底的后表面进行选择性刻蚀,刻蚀深度为衬底厚度的约50%,以产生倾斜刻蚀轮廓;以及
在晶片衬底的后表面的刻蚀区域,利用第二较小切口的刀片进行切割,以将有源器件裸片分隔成分离的器件裸片,其中每个分离的器件裸片相对于器件裸片的垂直面具有由倾斜刻蚀轮廓限定的成角度凹陷。
17.根据权利要求13所述的方法,其中从以下选择基座阵列:金属、塑料、金属上塑料的层叠复合物。
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