CN103776580B - 半导体传感器器件的封装及其方法 - Google Patents
半导体传感器器件的封装及其方法 Download PDFInfo
- Publication number
- CN103776580B CN103776580B CN201310488957.0A CN201310488957A CN103776580B CN 103776580 B CN103776580 B CN 103776580B CN 201310488957 A CN201310488957 A CN 201310488957A CN 103776580 B CN103776580 B CN 103776580B
- Authority
- CN
- China
- Prior art keywords
- gel
- lid
- pressure sensor
- gel layer
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005538 encapsulation Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 57
- 239000004744 fabric Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 28
- 230000002040 relaxant effect Effects 0.000 claims description 2
- 238000009940 knitting Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 239000000499 gel Substances 0.000 description 109
- 230000008859 change Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 229920001169 thermoplastic Polymers 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004677 Nylon Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229940009493 gel-one Drugs 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
- G01L19/0636—Protection against aggressive medium in general using particle filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/657,250 | 2012-10-22 | ||
| US13/657,250 US8946833B2 (en) | 2012-10-22 | 2012-10-22 | Packaging for semiconductor sensor devices and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103776580A CN103776580A (zh) | 2014-05-07 |
| CN103776580B true CN103776580B (zh) | 2018-01-12 |
Family
ID=49485484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310488957.0A Active CN103776580B (zh) | 2012-10-22 | 2013-10-18 | 半导体传感器器件的封装及其方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8946833B2 (enExample) |
| EP (1) | EP2722660B1 (enExample) |
| JP (1) | JP6161201B2 (enExample) |
| CN (1) | CN103776580B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9476788B2 (en) * | 2014-04-22 | 2016-10-25 | Freescale Semiconductor, Inc. | Semiconductor sensor with gel filled cavity |
| CN105300593B (zh) * | 2014-07-28 | 2018-12-28 | 恩智浦美国有限公司 | 具有盖的封装的半导体传感器装置 |
| DE102016201847A1 (de) * | 2015-05-28 | 2016-12-01 | Robert Bosch Gmbh | Vorrichtung zur Erfassung eines Drucks eines fluiden Mediums und Verfahren zur Herstellung der Vorrichtung |
| US10244644B2 (en) * | 2015-12-04 | 2019-03-26 | Continental Automotive Systems, Inc. | Automotive electronic device having a cover with fins to reduce gel vibration |
| CN108344530A (zh) * | 2017-01-24 | 2018-07-31 | 英属开曼群岛商智动全球股份有限公司 | 力量传感器 |
| US20180335360A1 (en) * | 2017-05-16 | 2018-11-22 | Honeywell International Inc. | Ported Pressure Sensor With No Internally Trapped Fluid |
| US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
| US10787361B2 (en) | 2018-10-30 | 2020-09-29 | Nxp Usa, Inc. | Sensor device with flip-chip die and interposer |
| US11532532B2 (en) * | 2019-05-08 | 2022-12-20 | Nxp Usa, Inc. | Composite media protection for pressure sensor |
| WO2022070571A1 (ja) * | 2020-09-30 | 2022-04-07 | 株式会社村田製作所 | 圧力センサおよびその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE29922992U1 (de) * | 1999-12-30 | 2000-03-23 | Aktiv-Sensor GmbH, 14532 Stahnsdorf | Druckmesselement mit piezoresistiven Halbleiterelementen |
| CN1453565A (zh) * | 2002-04-24 | 2003-11-05 | B·布朗·梅尔松根有限公司 | 压力传感器 |
| CN102183441A (zh) * | 2011-02-18 | 2011-09-14 | 华东理工大学 | 一种软物质材料的表面粘附能和弹性模量的测量方法 |
| CN102292024A (zh) * | 2009-01-13 | 2011-12-21 | 于尔戈实验室 | 接触面压力测量系统 |
| DE102010030960A1 (de) * | 2010-07-06 | 2012-01-12 | Robert Bosch Gmbh | Verfahren zur Herstellung eines schwingungsgedämpften Bauteils |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2764113B1 (fr) | 1997-05-28 | 2000-08-04 | Motorola Semiconducteurs | Dispositif capteur et son procede de fabrication |
| CN1213476C (zh) | 1998-06-24 | 2005-08-03 | 约翰逊·马太电子公司 | 具有纤维接合层的电子器件 |
| JP2000346736A (ja) | 1999-06-02 | 2000-12-15 | Saginomiya Seisakusho Inc | 半導体式圧力センサ |
| US6401545B1 (en) * | 2000-01-25 | 2002-06-11 | Motorola, Inc. | Micro electro-mechanical system sensor with selective encapsulation and method therefor |
| US6732590B1 (en) * | 2002-11-20 | 2004-05-11 | Infineon Technologies Ag | Pressure sensor and process for producing the pressure sensor |
| ITMI20070099A1 (it) * | 2007-01-24 | 2008-07-25 | St Microelectronics Srl | Dispositivo elettronico comprendente dispositivi sensori differenziali mems e substrati bucati |
| JP2009063352A (ja) | 2007-09-05 | 2009-03-26 | Nissan Motor Co Ltd | ガス物理量検出装置,燃料電池システム,車両 |
| JP2009103602A (ja) | 2007-10-24 | 2009-05-14 | Denso Corp | 圧力センサ |
| US20100289055A1 (en) | 2009-05-14 | 2010-11-18 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Silicone leaded chip carrier |
| US8230743B2 (en) | 2010-08-23 | 2012-07-31 | Honeywell International Inc. | Pressure sensor |
-
2012
- 2012-10-22 US US13/657,250 patent/US8946833B2/en active Active
-
2013
- 2013-09-30 JP JP2013202874A patent/JP6161201B2/ja active Active
- 2013-10-14 EP EP13188436.3A patent/EP2722660B1/en active Active
- 2013-10-18 CN CN201310488957.0A patent/CN103776580B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE29922992U1 (de) * | 1999-12-30 | 2000-03-23 | Aktiv-Sensor GmbH, 14532 Stahnsdorf | Druckmesselement mit piezoresistiven Halbleiterelementen |
| CN1453565A (zh) * | 2002-04-24 | 2003-11-05 | B·布朗·梅尔松根有限公司 | 压力传感器 |
| CN102292024A (zh) * | 2009-01-13 | 2011-12-21 | 于尔戈实验室 | 接触面压力测量系统 |
| DE102010030960A1 (de) * | 2010-07-06 | 2012-01-12 | Robert Bosch Gmbh | Verfahren zur Herstellung eines schwingungsgedämpften Bauteils |
| CN102183441A (zh) * | 2011-02-18 | 2011-09-14 | 华东理工大学 | 一种软物质材料的表面粘附能和弹性模量的测量方法 |
Non-Patent Citations (1)
| Title |
|---|
| 气压传感器中保护材料硅凝胶的优化设计;陈思远等;《传感器世界》;20070119(第01期);21-23 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2722660B1 (en) | 2015-12-30 |
| EP2722660A3 (en) | 2014-04-30 |
| US20140110801A1 (en) | 2014-04-24 |
| CN103776580A (zh) | 2014-05-07 |
| JP2014085337A (ja) | 2014-05-12 |
| JP6161201B2 (ja) | 2017-07-12 |
| US8946833B2 (en) | 2015-02-03 |
| EP2722660A2 (en) | 2014-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Texas in the United States Applicant after: NXP America Co Ltd Address before: Texas in the United States Applicant before: Fisical Semiconductor Inc. |
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| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |