CN101114637B - 半导体元件封装结构 - Google Patents

半导体元件封装结构 Download PDF

Info

Publication number
CN101114637B
CN101114637B CN 200610108579 CN200610108579A CN101114637B CN 101114637 B CN101114637 B CN 101114637B CN 200610108579 CN200610108579 CN 200610108579 CN 200610108579 A CN200610108579 A CN 200610108579A CN 101114637 B CN101114637 B CN 101114637B
Authority
CN
China
Prior art keywords
semiconductor element
packaging structure
component packaging
carrier
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN 200610108579
Other languages
English (en)
Other versions
CN101114637A (zh
Inventor
王盟仁
杨国宾
彭胜扬
萧伟民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Engineering Inc
Original Assignee
Advanced Semiconductor Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Engineering Inc filed Critical Advanced Semiconductor Engineering Inc
Priority to CN 200610108579 priority Critical patent/CN101114637B/zh
Publication of CN101114637A publication Critical patent/CN101114637A/zh
Application granted granted Critical
Publication of CN101114637B publication Critical patent/CN101114637B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

本发明是关于一种半导体元件封装结构,包括一载体、一第一半导体元件、一第二半导体元件、多个导电元件、一预模制材料及一上盖。该第一半导体元件系电性连接至该载体。该第二半导体元件系位于该第一半导体元件上方。这些导电元件系用以电性连接该第二半导体元件及该载体。该预模制材料系与该载体形成一容置空间以容置该第一半导体元件、该第二半导体元件及这些导电元件。该上盖系黏附于且覆盖住该预模制材料的开口。藉此,由于该预模制材料系利用灌模方式形成,因此工艺上较习知半导体元件封装结构简单。

Description

半导体元件封装结构
【技术领域】
本发明关于一种半导体元件封装结构,详言之,是关于一种内含预模制材料的半导体元件封装结构。
【背景技术】
参考图1,显示美国专利US6,871,231B2所揭示的习知半导体元件封装结构的剖视示意图。该习知半导体元件封装结构1包括一基板11、多个表面安装元件(SurfaceMountable Components)12及一上盖13。
该基板11具有一上表面111及一下表面112。这些表面安装元件12是微机电系统(Micro-Electro-Mechanical System,MEMS)元件,例如一转换器(Transducer)、麦克风(Microphone)、集成电路(Integrated Circuit)或其他相类似物。这些表面安装元件12系水平排列放置,且附着于该基板11上表面111。该上盖13是一类似ㄇ字外型,且与该基板11上表面111形成一容置空间14以容置这些表面安装元件12。该上盖13系由一外盖15及一内盖16所组成,该外盖15及该内盖16皆是导电材质,且外型皆为类似ㄇ字外型。该外盖15及该内盖16的下端利用一导电黏胶17黏附于该基板11上表面111。该外盖15及该内盖16具有多个相对应的透孔18以与外界沟通。每一该透孔18包含一遮蔽层(Barrier)19,夹设于该外盖15及该内盖16之间,且用以阻隔外界的水气、杂质或光线进入该容置空间14而影响这些表面安装元件12。
该习知半导体元件封装结构1的缺点如下。首先,这些表面安装元件12系水平排列放置,因此会加大该习知半导体元件封装结构1整体的水平方向的宽度。其次,在制造过程中,该外盖15及该内盖16紧配后再黏附于该基板11上表面111,其定位不易,增加制造的困难度。
因此,有必要提供一种创新且具进步性的半导体元件封装结构,以解决上述问题。
【发明内容】
本发明的主要目的在于提供一种半导体元件封装结构,包括一载体、一第一半导体元件、一第二半导体元件、多个导电元件、一预模制材料(Pre-mold)及一上盖(Lid)。该载体具有一上表面。该第一半导体元件系电性连接至该载体。该第二半导体元件系位于该第一半导体元件上方。这些导电元件系用以电性连接该第二半导体元件及该载体上表面。该预模制材料系与该载体上表面形成一容置空间以容置该第一半导体元件、该第二半导体元件及这些导电元件,且该预模制材料具有一开口。该上盖(Lid)系黏附于且覆盖住该预模制材料的开口。藉此,由于该预模制材料系利用灌模方式形成,因此工艺上较习知半导体元件封装结构简单,也不会有习知该外盖及该内盖定位不易的问题。而且该预模制材料内还可以配置被动元件,这是习知该外盖及该内盖所无法达到的功能。此外,该第二半导体元件系位于该第一半导体元件上方,如此可减少该半导体元件封装结构整体的水平方向的宽度。
【附图说明】
图1显示美国专利US6,871,231B2所揭示的习知半导体元件封装结构的剖视示意图;
图2显示本发明半导体元件封装结构的第一实施例的剖视示意图;
图3显示本发明半导体元件封装结构的第二实施例的剖视示意图;
图4显示本发明半导体元件封装结构的第三实施例的剖视示意图;及
图5显示本发明半导体元件封装结构的第四实施例的剖视示意图。
【具体实施方式】
参考图2,显示本发明半导体元件封装结构的第一实施例的剖视示意图。该半导体元件封装结构2包括一载体21、一第一半导体元件22、一第二半导体元件23、多条导电元件24(如导线)、一预模制材料(Pre-mold)25及一上盖(Lid)26。该载体21具有一上表面211及一下表面212。在本实施例中,该载体21是一基板(Substrate),然而可以理解的是该载体21也可以是一导线架(Leadframe)。
该第一半导体元件22系电性连接至该载体21。在本实施例中,该第一半导体元件22是一芯片,且系以倒装芯片方式附着于该载体21上表面211。然而可以理解的是该第一半导体元件22也可以是一封装结构。
该第二半导体元件23系位于该第一半导体元件22上方。在本实施例中,该第二半导体元件23的面积系小于该第一半导体元件22,因此直接黏附位于该第一半导体元件22上方。该第二半导体元件是一微机电系统(Micro-Electro-Mechanical System,MEMS)元件,例如一转换器(Transducer)、麦克风(Microphone)、集成电路(IntegratedCircuit)或其他相类似物。这些导电元件24系用以电性连接该第二半导体元件23及该载体21上表面211。
该预模制材料25是一环侧壁外型,利用灌模(Molding)方式形成。该预模制材料25与该载体21上表面211形成一容置空间27以容置该第一半导体元件22、该第二半导体元件23及这些导电元件24,且该预模制材料25具有一开口。该上盖26系黏附于该预模制材料25上且覆盖住该预模制材料25的开口。该上盖26具有至少一透孔261以与外界沟通。较佳地,该半导体元件封装结构2更包括多个被动元件28,位于该载体21上表面211且位于该预模制材料25内。
在该半导体元件封装结构2中,该预模制材料25系利用灌模方式形成,因此工艺上较习知半导体元件封装结构1(图1)简单,也不会有习知该外盖15及该内盖16定位不易的问题。而且该预模制材料25内还可以配置这些被动元件28,这是习知该外盖15及该内盖16所无法达到的功能。此外,该第二半导体元件23系位于该第一半导体元件22上方,如此可减少该半导体元件封装结构2整体的水平方向的宽度。
参考图3,显示本发明半导体元件封装结构的第二实施例的剖视示意图.本实施例的半导体元件封装结构3与该第一实施例的半导体元件封装结构2(图2)大致相同,其中相同元件赋予相同的编号.本实施例的半导体元件封装结构3与该第一实施例的半导体元件封装结构2(图2)不同处仅在于,该第二半导体元件23的面积系大于该第一半导体元件22,因此必须增设一间隔体(Spacer)29,该间隔体29夹设于该第一半导体元件22及该第二半导体元件23之间.
参考图4,显示本发明半导体元件封装结构的第三实施例的剖视示意图。该半导体元件封装结构4包括一载体41、一第一半导体元件42、一第二半导体元件43、多条导电元件44、一预模制材料(Pre-mold)45及一上盖(Lid)46。该载体41具有一上表面411及一下表面412。在本实施例中,该载体41是一基板(Substrate),然而可以理解的是该载体41也可以是一导线架(Leadframe)。
该第一半导体元件42系电性连接至该载体41。在本实施例中,该第一半导体元件42是一芯片,且系以倒装芯片方式附着于该载体41上表面411。然而可以理解的是该第一半导体元件42也可以是一封装结构。
该预模制材料45系利用灌模(Molding)方式形成,其具有一底部451及一环侧部452,该底部451包覆该第一半导体元件42及该载体41上表面411,该底部451具有一贯穿孔4511以暴露部分该载体41上表面411。该底部451与该环侧部452形成一容置空间47。
该第二半导体元件43系位于该容置空间47内,且可位于该预模制材料45的底部451上表面的任何位置。该第二半导体元件是一微机电系统(Micro-Electro-Mechanical System,MEMS)元件,例如一转换器(Transducer)、麦克风(Microphone)、集成电路(Integrated Circuit)或其他相类似物。
这些导电元件44系用以穿过该底部451的贯穿孔4511而电性连接该第二半导体元件43及该载体41上表面411。该上盖46系黏附于该预模制材料45的该环侧部452且覆盖住该预模制材料45的容置空间上。该上盖46具有至少一透孔461以与外界沟通。较佳地,该半导体元件封装结构4更包括多个被动元件48,这些被动元件48位于该载体41上表面411且位于该预模制材料45的底部451内。
参考图5,显示本发明半导体元件封装结构的第四实施例的剖视示意图。本实施例的半导体元件封装结构5与该第三实施例的半导体元件封装结构4(图4)大致相同,其中相同元件赋予相同的编号。本实施例的半导体元件封装结构5与该第三实施例的半导体元件封装结构4(图4)不同处仅在于,在本实施例中,该第一半导体元件42是一芯片,黏附着于该载体41上表面411,且以打线方式电性连接至该载体41上表面411。
惟上述实施例仅为说明本发明的原理及其功效,而非用以限制本发明。因此,习于此技术的人士可在不违背本发明的精神对上述实施例进行修改及变化。本发明的权利范围应如后述的申请专利范围所列。

Claims (9)

1.一种半导体元件封装结构,包括:
一载体,具有一上表面;
一第一半导体元件,电性连接至该载体;
一第二半导体元件,位于该第一半导体元件上方;
多个导电元件,用以电性连接该第二半导体元件及该载体上表面;
一预模制材料(Pre-mold),与该载体上表面形成一容置空间以容置该第一半导体元件、该第二半导体元件及这些导电元件,且该预模制材料具有一开口;及
一上盖(Lid),黏附于且覆盖住该预模制材料的开口,
其中所述预模制材料是一环侧壁外型且利用灌模方式形成,
该预模制材料(Pre-mold),具有一底部及一环侧部,该底部包覆该第一半导体元件及该载体上表面,且该底部具有一贯穿孔以暴露部分该载体上表面。
2.根据权利要求1所述的半导体元件封装结构,其特征在于,该载体是一基板(Substrate)。
3.根据权利要求1所述的半导体元件封装结构,其特征在于,该载体是一导线架(Leadframe)。
4.根据权利要求1所述的半导体元件封装结构,其特征在于,该第一半导体元件是
一芯片,且以倒装芯片方式附着于该载体上表面。
5.根据权利要求1所述的半导体元件封装结构,其特征在于,该第一半导体元件是一封装结构。
6.根据权利要求1所述的半导体元件封装结构,其特征在于,该第二半导体元件是一微机电系统(Micro-Electro-Mechanical System,MEMS)。
7.根据权利要求1所述的半导体元件封装结构,其特征在于,更包括多个被动元件,位于该载体上表面且位于该预模制材料内。
8.根据权利要求1所述的半导体元件封装结构,其特征在于,更包括一间隔体,夹设于该第一半导体元件及该第二半导体元件之间。
9.根据权利要求1所述的半导体元件封装结构,其特征在于,该上盖具有至少一透孔。
CN 200610108579 2006-07-25 2006-07-25 半导体元件封装结构 Active CN101114637B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200610108579 CN101114637B (zh) 2006-07-25 2006-07-25 半导体元件封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200610108579 CN101114637B (zh) 2006-07-25 2006-07-25 半导体元件封装结构

Publications (2)

Publication Number Publication Date
CN101114637A CN101114637A (zh) 2008-01-30
CN101114637B true CN101114637B (zh) 2010-05-12

Family

ID=39022863

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200610108579 Active CN101114637B (zh) 2006-07-25 2006-07-25 半导体元件封装结构

Country Status (1)

Country Link
CN (1) CN101114637B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658255B2 (en) * 2017-01-03 2020-05-19 Advanced Semsconductor Engineering, Inc. Semiconductor device package and a method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1595641A (zh) * 2003-09-12 2005-03-16 三洋电机株式会社 半导体装置及其制造方法
CN1718532A (zh) * 2004-07-07 2006-01-11 日月光半导体制造股份有限公司 微镜元件封装构造

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1595641A (zh) * 2003-09-12 2005-03-16 三洋电机株式会社 半导体装置及其制造方法
CN1718532A (zh) * 2004-07-07 2006-01-11 日月光半导体制造股份有限公司 微镜元件封装构造

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2006-173279A 2006.06.29
JP特开平10-90095A 1998.04.10

Also Published As

Publication number Publication date
CN101114637A (zh) 2008-01-30

Similar Documents

Publication Publication Date Title
US9082883B2 (en) Top port MEMS cavity package and method of manufacture thereof
CN102685657B (zh) 部件
US9406747B2 (en) Component in the form of a wafer level package and method for manufacturing same
US8217474B2 (en) Hermetic MEMS device and method for fabricating hermetic MEMS device and package structure of MEMS device
CN1960580B (zh) 适于量产的硅麦克风封装
US20070035001A1 (en) Chip scale package for a micro component
US20100090295A1 (en) Folded lead-frame packages for MEMS devices
US8248813B2 (en) Electronic device, electronic module, and methods for manufacturing the same
KR101579623B1 (ko) 이미지 센서용 반도체 패키지 및 그 제조 방법
JP5351943B2 (ja) 両面センサパッケージとして使用される装置
CN101297404A (zh) 半导体封装,制造半导体封装的方法,以及用于图像传感器的半导体封装模块
JP6311800B2 (ja) 拡大されたバックチャンバを備えたマイクロホンおよび製造方法
CN104422553A (zh) 微机械传感器装置及相应的制造方法
TW201523792A (zh) 封裝結構及其製法
KR100818546B1 (ko) 이미지 센서 패키지 및 이의 제조방법
CN204714514U (zh) 三维堆叠mems封装结构
CN101150888B (zh) 微机电麦克风封装结构及其封装方法
US11245977B2 (en) Electric component with sensitive component structures and method for producing an electric component with sensitive component structures
CN101114637B (zh) 半导体元件封装结构
CN101369564B (zh) 半导体器件
JP2013154465A (ja) Memsデバイスアセンブリおよびそのパッケージング方法
CN106744647A (zh) Mems芯片封装结构以及封装方法
JP2007227596A (ja) 半導体モジュール及びその製造方法
US20080185706A1 (en) Package and method for making the same
US20070252261A1 (en) Semiconductor device package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant