CN103745990A - Depletion algan/gan mishemt high voltage device and manufacturing method thereof - Google Patents
Depletion algan/gan mishemt high voltage device and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 118
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 89
- 238000001259 photo etching Methods 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a depletion AlGaN/GaN MISHEMT high voltage device and a manufacturing method thereof. The device sequentially comprises a substrate, a GaN buffer layer, an intrinsic AlGaN (or GaN) channel layer, an AlN isolated layer and an AlGaN barrier layer from bottom to top; the AlGaN barrier layer is provided with a source, a grid and a drain, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN (or InGaN) epitaxial layer and a base are sequentially extended on the AlGaN barrier layer between the grid and the drain. The depletion AlGaN/GaN MISHEMT high voltage device and the manufacturing method have the advantages that when the device is switched on, the concentration of 2-dimensional electron gas in a first area and a second area between the grid and the drain is increased, and resistance is reduced; when the device is switched off, the concentration of the 2-dimensional electron gas in the first area is reduced, the concentration of the 2-dimensional electron gas in the second area is the same as that when the device is switched on, the width of a depletion area of the device is increased, electric field distribution is changed, and the breakdown voltage of the device is improved; an insulated gate structure prevents the grid from leaking current, and the performance of the device is improved.
Description
Technical field
The present invention relates to a kind of high tension apparatus and preparation method thereof, be specifically related to high tension apparatus of a kind of depletion-mode AlGaN/GaN high pressure, low on-resistance and preparation method thereof, the AlGaN/GaN MISHEMT High Electron Mobility Transistor that can be used for making high pressure low on-resistance, belongs to microelectronics technology.
Background technology
Take in recent years that the third generation broad stopband gap semiconductor that SiC and GaN be representative is large with its energy gap, breakdown electric field is high, thermal conductivity is high, saturated electrons speed is large and the characteristic such as heterojunction boundary two-dimensional electron gas height, be subject to extensive concern.In theory, utilize the devices such as high electron mobility transistor (HEMT) that these materials make, LED, laser diode LD to there is obvious advantageous characteristic than existing device, therefore researcher has carried out extensive and deep research to it both at home and abroad in the last few years, and has obtained the achievement in research attracting people's attention.
AlGaN/GaN heterojunction high electron mobility transistor (HEMT) is demonstrating advantageous advantage aspect high-temperature device and HIGH-POWERED MICROWAVES device, and pursuit device high-frequency, high pressure, high power have attracted numerous research.In recent years, make the another study hotspot that higher frequency high pressure AlGaN/GaN HEMT becomes concern.Due to after AlGaN/GaN heterojunction grown, just there are a large amount of two-dimensional electron gas 2DEG in heterojunction boundary, and its mobility is very high, so we can obtain higher device frequency characteristic.Aspect raising AlGaN/GaN heterojunction electron mobility transistor puncture voltage, people have carried out a large amount of research, find that puncturing of AlGaN/GaN HEMT device mainly occurs in grid by drain terminal, therefore to improve the puncture voltage of device, must make the electric field redistribution in grid leak region, especially reduce grid by the electric field of drain terminal, for this reason, people have proposed to adopt the method for field plate structure:
1. adopt field plate structure.Referring to Yuji Ando, Akio Wakejima, the Novel AlGaN/GaN dual-field-plate FET with high gain of Yasuhiro Okamoto etc., increased linearity and stability, IEDM2005, pp.576-579,2005(two field plate field-effect transistors with high-gain, high linearity and stability).In AlGaN/GaN HEMT device, adopt grid field plate and source field plate structure simultaneously, the puncture voltage of device is brought up to the 250V adopting two field plates from the 125V of independent employing grid field plate, and reduced gate leakage capacitance, improved the linearity and the stability of device.
2. adopt super-junction structures.Referring to Akira Nakajima, Yasunobu Sumida, GaN based super heterojunction field effect transistors using the polarization junction concept(super junction field effect transistor based on GaN that utilizes polarization knot of Mahesh H).In this device architecture, have 2DEG and 2DEH simultaneously, when grid forward bias, there is not any variation in the concentration of 2DEG, therefore the conducting resistance of device can not increase, when grid reverse bias, 2DEG in raceway groove can exhaust due to electric discharge, thereby has improved the puncture voltage (being increased to 560V from 110V) of device, and conducting resistance is 6.1m Ω cm
2.
Yet all there is the weak point that conducting resistance is larger in the high tension apparatus with above-mentioned two kinds of structures.
Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of depletion-mode AlGaN/GaN MISHEMT high-voltage device structure meeting the application requirements of high pressure, low on-resistance, and the method with good controllability and repeated this depletion-mode AlGaN/GaN MISHEMT high tension apparatus of making.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of depletion-mode AlGaN/GaN MISHEMT high tension apparatus, it is characterized in that, comprise successively from bottom to up: substrate, GaN resilient coating, intrinsic GaN or AlGaN channel layer, AlN separator and AlGaN barrier layer, on AlGaN barrier layer, along continuous straight runs has successively: source electrode, grid and drain electrode, between aforementioned grid and AlGaN barrier layer, be also provided with insulating medium layer, in extension above the AlGaN barrier layer between grid and drain electrode, have between linear AlGaN layer and linear AlGaN layer and drain electrode and leave gap, subregion extension on linear AlGaN layer has P type GaN or InGaN epitaxial loayer, and there is the base stage being electrically connected to grid on P type GaN or InGaN epitaxial loayer, the width of P type GaN or InGaN epitaxial loayer is less than the width of linear AlGaN layer, aforementioned AlGaN barrier layer is comprised of the i type AlGaN layer of lower floor and the N-shaped AlGaN layer on upper strata, the upper surface of aforementioned source electrode, grid, drain electrode and base stage is also formed with and adds thick electrode, and the both sides that add thick electrode are all formed with passivation layer.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, aforesaid substrate is sapphire, carborundum, GaN or MgO.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, in aforementioned AlGaN barrier layer, the ratio of component of Al and Ga can regulate, and the component of Al, Ga, N is respectively x, 1-x, 1,1>x>0.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, it is characterized in that, in aforementioned linear AlGaN layer, the component of Al is increased to y by x linearity, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively y, 1-y, 1,1>y>x>0.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, it is characterized in that, in aforementioned intrinsic AlGaN channel layer, the component of Al is less than x, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively z, 1-z, 1,1>x>z>0.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, aforementioned dielectric dielectric layer is SiN, Al
2o
3or HfO
2.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, aforementioned passivation layer is SiN, Al
2o
3or HfO
2.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, the linear AlGaN layer between aforementioned grid and drain electrode and the width >=0.5 μ m in the gap between drain electrode.
Aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, in aforementioned P type InGaN epitaxial loayer, the constant or In component of In component increases gradually.
The method of making aforesaid depletion-mode AlGaN/GaN MISHEMT high tension apparatus, is characterized in that, comprises the following steps:
(1) the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to organic washing, by mobile washed with de-ionized water and put into HCl:H
2in the solution of O=1:1, corrode 30-60s, finally by mobile washed with de-ionized water and dry up with high pure nitrogen;
(2) the AlGaN/GaN heterojunction material cleaning up is carried out to photoetching and dry etching, be formed with source region table top;
(3) to preparing the AlGaN/GaN heterojunction material of table top, carry out photoetching, form the etched area of P type GaN or InGaN, linear AlGaN layer, put into ICP dry etching reative cell etching, the P type GaN of the subregion between Zone Full, grid leak and grid between grid source, source electrode and drain electrode top or InGaN layer and linear AlGaN layer are all etched away, form grid leak the 3rd region;
(4) device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, finally in nitrogen environment, carry out the rapid thermal annealing of 850 ℃ of 35s, form ohmic contact;
(5) device for preparing ohmic contact is carried out to photoetching, form the etched area of P type GaN or InGaN epitaxial loayer, put into ICP dry etching reative cell etching, P type GaN or the InGaN epitaxial loayer of subregion between grid and drain electrode are etched away, form grid leak first area and second area;
(6) device for preparing ohmic contact is put into atomic layer deposition apparatus deposit Al
2o
3medium, thickness is 5-10nm;
(7) to completing the device of deposit, carry out photoetching, form Al
2o
3the corrosion region of medium, then puts into the solution 30s of HF:H2O=1:10, erodes grid with the Al of exterior domain
2o
3;
(8) device that completes corrosion is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au=20/20nm and peel off, finally in atmospheric environment, carry out the annealing of 550 ℃ of 10min, form base stage ohmic contact;
(9) to completing device prepared by base stage, carry out photoetching, form gate metal region, then put into electron beam evaporation platform deposit Ni/Au=20/200nm and peel off, complete the preparation of gate electrode;
(10) by completing device prepared by grid, put into PECVD reative cell deposit SiN passivating film, the thickness of passivating film is 200nm-300nm;
(11) device is cleaned again, photoetching development, form the etched area of SiN passivating film, and put into ICP dry etching reative cell, the SiN passivating film that source electrode, grid and drain electrode are covered above etches away;
(12) device is cleaned, photoetching development, and put into the thick electrode that adds of electron beam evaporation platform deposit Ti/Au=20/200nm, complete the preparation of integral device.
Usefulness of the present invention is:
1, between grid leak, the formation in first area, second area and the 3rd region makes: during break-over of device, the 2DEG concentration of first area and second area increases, and resistance is reduced, and has reached the object that reduces device conducting resistance; The 2DEG of device when cut-off first area is reduced, and the 2DEG in second area and the 3rd region is identical during with break-over of device, has increased the width of device depletion region, has changed Electric Field Distribution, has reached the object of raising device electric breakdown strength;
2, the present invention adopts insulated gate structure (insulating medium layer of grid and below), has avoided gate leakage current, has improved device performance;
3, method of the present invention, has good controllability and repeatability.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a specific embodiment of depletion-mode AlGaN/GaN MISHEMT high tension apparatus of the present invention;
Fig. 2 is the fabrication processing figure of depletion-mode AlGaN/GaN MISHEMT high tension apparatus of the present invention.
The implication of Reference numeral in figure: 1-substrate, 2-GaN resilient coating, 3-intrinsic GaN channel layer, 4-AlN separator, 5-AlGaN barrier layer, 501-i type AlGaN layer, 502-n type AlGaN layer, 6-source electrode, 7-grid, 8-drain electrode, 9-insulating medium layer, the linear AlGaN layer of 10-, 11-P type GaN epitaxial loayer, 12-base stage, 13-adds thick electrode, 14-passivation layer, D1 represents first area, and D2 represents second area, and D3 represents the 3rd region.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is done to concrete introduction.
First, introduce the structure of depletion-mode AlGaN/GaN MISHEMT high tension apparatus of the present invention.
With reference to Fig. 1, depletion-mode AlGaN/GaN MISHEMT high tension apparatus of the present invention, its structure comprises from bottom to up successively: substrate 1, GaN resilient coating 2, intrinsic GaN channel layer 3(intrinsic GaN channel layer 3 can also substitute with AlGaN channel layer), AlN separator 4 and AlGaN barrier layer 5, AlGaN barrier layer 5 is comprised of the i type AlGaN layer 501 of lower floor and the N-shaped AlGaN layer 502 on upper strata, wherein, on AlGaN barrier layer 5, along continuous straight runs has successively: source electrode 6, grid 7 and drain electrode 8, and be also provided with insulating medium layer 9 between grid 7 and AlGaN barrier layer 5, insulating medium layer 9 preferably adopts SiN, Al
2o
3or HfO
2deng insulating material, make.Above the AlGaN barrier layer 5 between grid 7 and drain electrode 8, extension has linear AlGaN layer 10, and leaves gap, the width >=0.5 μ m in gap between linear AlGaN layer 10 and drain electrode 8.Subregion extension on linear AlGaN layer 10 has P type GaN epitaxial loayer 11(P type GaN epitaxial loayer 11 to substitute with InGaN epitaxial loayer, in P type InGaN epitaxial loayer, constant or the In component of In component increases gradually), and on P type GaN epitaxial loayer 11, have the base stage 12 being electrically connected to grid 7, the width of P type GaN epitaxial loayer 11 is less than the width of linear AlGaN layer 10.In addition, the upper surface of source electrode 6, grid 7, drain electrode 8 and base stage 12 is also formed with and adds thick electrode 13, and the both sides that add thick electrode 13 are all formed with passivation layer 14, and passivation layer 14 preferably adopts SiN, Al
2o
3or HfO
2deng insulating material, make.
As a kind of preferred scheme, substrate is sapphire, carborundum, GaN or MgO.
As a kind of preferred scheme, in AlGaN barrier layer 5, the ratio of component of Al and Ga can regulate, and the component of Al, Ga, N is respectively x, 1-x, 1,0<x<1, i.e. Al
xga
1-xn.
More preferably, in linear AlGaN layer 10, the component of Al is increased to y by x linearity, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively y, 1-y, 1,1>y>x>0, i.e. Al
yga1
-yn.
Suppose, the thickness of linear AlGaN layer 10 is L, and the distance of the lower surface of the linear AlGaN layer 10 of distance is L
1the weight content of the Al of place is: (y-x) * L
1/ L.
If intrinsic GaN channel layer 3 use intrinsic AlGaN channel layers substitute, in intrinsic AlGaN channel layer, the component of Al is less than x, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively z, 1-z, 1,1>x>z>0, i.e. Al
zga
1-zn.
Next, introduce the method for making above-mentioned depletion-mode AlGaN/GaN MISHEMT high tension apparatus.
With reference to Fig. 2, this manufacture method comprises the following steps:
1, the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to organic washing, by mobile washed with de-ionized water and put into HCl:H
2in the solution of O=1:1, corrode 30-60s, finally by mobile washed with de-ionized water and dry up with high pure nitrogen.
2, the AlGaN/GaN heterojunction material cleaning up is carried out to photoetching and dry etching, be formed with source region table top;
3, to preparing the AlGaN/GaN heterojunction material of table top, carry out photoetching, form the etched area of P type GaN etched area (or InGaN etched area) and linear AlGaN layer, put into ICP dry etching reative cell etching, process conditions are: upper electrode power is 200W, lower electrode power is 20W, chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 5min-8min.By P type GaN(or the InGaN of the subregion between Zone Full, grid leak and grid between grid source, source electrode and drain electrode top) layer and linear AlGaN layer all etch away, and forms grid leak the 3rd region D3.
4, device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, finally in nitrogen environment, carry out the rapid thermal annealing of 850 ℃ of 35s, form ohmic contact.
5, the device for preparing ohmic contact is carried out to photoetching, forms P type GaN(or InGaN) etched area of epitaxial loayer, put into ICP dry etching reative cell etching, process conditions are: upper electrode power is 200W, lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 3min-5min.By P type GaN(or the InGaN of subregion between grid and drain electrode) epitaxial loayer etches away, and forms grid leak first area D1 and second area D2.
6, the device for preparing ohmic contact is put into atomic layer deposition apparatus deposit Al
2o
3medium, thickness is 5-10nm, and process conditions are: growth temperature is 300 ℃, and pressure is 2000Pa, H
2the flow of O and TMAl is 150sccm.
7, to completing the device of deposit, carry out photoetching, form Al
2o
3the corrosion region of medium, then puts into the solution 30s of HF:H2O=1:10, erodes grid with the Al of exterior domain
2o
3.
8, the device that completes corrosion is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au=20/20nm and peel off, finally in atmospheric environment, carry out the annealing of 550 ℃ of 10min, form base stage ohmic contact.
9, to completing device prepared by base stage, carry out photoetching, form gate metal region, then put into electron beam evaporation platform deposit Ni/Au=20/200nm and peel off, complete the preparation of gate electrode.
10, by completing device prepared by grid, put into PECVD reative cell deposit SiN passivating film, the thickness of passivating film is 200nm-300nm, and process conditions are: the flow of SiH4 is 40sccm, and the flow of NH3 is 10sccm, chamber pressure is 1-2Pa, and radio-frequency power is 40W.
11, device is cleaned again, photoetching development, form the etched area of SiN passivating film, and put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, the flow of CF4 is 20sccm, the flow of Ar gas is 10sccm, and etch period is 10min, and the SiN passivating film that source electrode, grid and drain electrode are covered above etches away.
12, device is cleaned, photoetching development, and put into the thick electrode that adds of electron beam evaporation platform deposit Ti/Au=20/200nm, complete the preparation of integral device.
As can be seen here, method of the present invention has good controllability and repeatability.
Due to high tension apparatus of the present invention, it is formed with: first area D1, second area D2 and the 3rd region D3 between grid leak, thus make:
(1) during break-over of device, the AlGaN/GaN interface 2DEG concentration under first area D1 and second area D2 increases, and resistance is reduced, and has reached the object that reduces device conducting resistance.
(2) when device ends, while being grid 7 voltages≤threshold voltage, 2DEG in raceway groove under grid 7 is depleted, meanwhile because base stage 12 is electrically connected to grid 7, therefore the 2DEG concentration under the D1 of first area reduces (being even reduced to 50%) to some extent, the width of the depletion region of device is increased to some extent, can bear the region of high electric field and be widened, reached the object that improves device electric breakdown strength; In addition, the 2DEG concentration under second area D2 is identical during with break-over of device, has increased the width of device depletion region, has changed Electric Field Distribution, has reached the object that improves device electric breakdown strength.
In addition, because high tension apparatus of the present invention has adopted insulated gate structure (insulating medium layer of grid and below), avoid gate leakage current, improved device performance.
It should be noted that, above-described embodiment does not limit the present invention in any form, and all employings are equal to replaces or technical scheme that the mode of equivalent transformation obtains, all drops in protection scope of the present invention.
Claims (10)
1. depletion-mode AlGaN/GaN MISHEMT high tension apparatus, it is characterized in that, comprise successively from bottom to up: substrate, GaN resilient coating, intrinsic GaN or AlGaN channel layer, AlN separator and AlGaN barrier layer, on AlGaN barrier layer, along continuous straight runs has successively: source electrode, grid and drain electrode, between described grid and AlGaN barrier layer, be also provided with insulating medium layer, in extension above the AlGaN barrier layer between grid and drain electrode, have between linear AlGaN layer and linear AlGaN layer and drain electrode and leave gap, subregion extension on linear AlGaN layer has P type GaN or InGaN epitaxial loayer, and there is the base stage being electrically connected to grid on P type GaN or InGaN epitaxial loayer, the width of P type GaN or InGaN epitaxial loayer is less than the width of linear AlGaN layer, described AlGaN barrier layer is comprised of the i type AlGaN layer of lower floor and the N-shaped AlGaN layer on upper strata, the upper surface of described source electrode, grid, drain electrode and base stage is also formed with and adds thick electrode, and the both sides that add thick electrode are all formed with passivation layer.
2. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, is characterized in that, described substrate is sapphire, carborundum, GaN or MgO.
3. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, it is characterized in that, in described AlGaN barrier layer, the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively x, 1-x, 1,1>x>0.
4. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 3, it is characterized in that, in described linear AlGaN layer, the component of Al is increased to y by x linearity, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively y, 1-y, 1,1>y>x>0.
5. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 3, it is characterized in that, in described intrinsic AlGaN channel layer, the component of Al is less than x, and the ratio of component of Al and Ga can regulate, the component of Al, Ga, N is respectively z, 1-z, 1,1>x>z>0.
6. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, is characterized in that, described insulating medium layer is SiN, Al
2o
3or HfO
2.
7. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, is characterized in that, described passivation layer is SiN, Al
2o
3or HfO
2.
8. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, is characterized in that, the linear AlGaN layer between described grid and drain electrode and the width >=0.5 μ m in the gap between drain electrode.
9. depletion-mode AlGaN/GaN MISHEMT high tension apparatus according to claim 1, is characterized in that, in described P type InGaN epitaxial loayer, the constant or In component of In component increases gradually.
10. make the method for depletion-mode AlGaN/GaN MISHEMT high tension apparatus claimed in claim 1, it is characterized in that, comprise the following steps:
(1) the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to organic washing, by mobile washed with de-ionized water and put into HCl:H
2in the solution of O=1:1, corrode 30-60s, finally by mobile washed with de-ionized water and dry up with high pure nitrogen;
(2) the AlGaN/GaN heterojunction material cleaning up is carried out to photoetching and dry etching, be formed with source region table top;
(3) to preparing the AlGaN/GaN heterojunction material of table top, carry out photoetching, form the etched area of P type GaN or InGaN, linear AlGaN layer, put into ICP dry etching reative cell etching, the P type GaN of the subregion between Zone Full, grid leak and grid between grid source, source electrode and drain electrode top or InGaN layer and linear AlGaN layer are all etched away, form grid leak the 3rd region;
(4) device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, finally in nitrogen environment, carry out the rapid thermal annealing of 850 ℃ of 35s, form ohmic contact;
(5) device for preparing ohmic contact is carried out to photoetching, form the etched area of P type GaN or InGaN epitaxial loayer, put into ICP dry etching reative cell etching, P type GaN or the InGaN epitaxial loayer of subregion between grid and drain electrode are etched away, form grid leak first area and second area;
(6) device for preparing ohmic contact is put into atomic layer deposition apparatus deposit Al
2o
3medium, thickness is 5-10nm;
(7) to completing the device of deposit, carry out photoetching, form Al
2o
3the corrosion region of medium, then puts into the solution 30s of HF:H2O=1:10, erodes grid with the Al of exterior domain
2o
3;
(8) device that completes corrosion is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au=20/20nm and peel off, finally in atmospheric environment, carry out the annealing of 550 ℃ of 10min, form base stage ohmic contact;
(9) to completing device prepared by base stage, carry out photoetching, form gate metal region, then put into electron beam evaporation platform deposit Ni/Au=20/200nm and peel off, complete the preparation of gate electrode;
(10) by completing device prepared by grid, put into PECVD reative cell deposit SiN passivating film, the thickness of passivating film is 200nm-300nm;
(11) device is cleaned again, photoetching development, form the etched area of SiN passivating film, and put into ICP dry etching reative cell, the SiN passivating film that source electrode, grid and drain electrode are covered above etches away;
(12) device is cleaned, photoetching development, and put into the thick electrode that adds of electron beam evaporation platform deposit Ti/Au=20/200nm, complete the preparation of integral device.
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