CN105448964A - Composite stepped field plate trench gate AlGaN/GaN HEMT high-voltage device structure and manufacturing method therefor - Google Patents
Composite stepped field plate trench gate AlGaN/GaN HEMT high-voltage device structure and manufacturing method therefor Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 80
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 25
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims description 27
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 238000005566 electron beam evaporation Methods 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000003139 buffering effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 6
- 238000007654 immersion Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a composite stepped field plate trench gate AlGaN/GaN HEMT high-voltage device structure and a manufacturing method therefor. The structure sequentially comprises the following parts from the bottom to the top: a composite substrate, a GaN buffering layer, an AlN isolation layer, a GaN trench layer, an intrinsic AlGaN layer, and an AlGaN doping layer. Two ends of the AlGaN doping layer are respectively provided with a source electrode and a drain electrode. A part, close to the drain electrode, of the AlGaN doping layer is provided with an LiF layer which is provided with a drain field plate. An organic insulating dielectric layer is disposed between the LiF layer and the source electrode, and the upper and side parts of the organic insulating dielectric layer are provided with stepped field plates. A naked region on the AlGaN doping layer is provided with a passivation layer. The structure improves the breakdown voltage of a device through employing a PTFE layer and an ITO gate field plate. The structure reduces the gate-drain conduction resistance of the device through employing the LiF layer and the Al drain field plate. The structure further improves the breakdown voltage of the device through employing the stepped field plates and the drain field plate.
Description
Technical field
The invention belongs to microelectronics technology, relate to semiconductor device to make, composite step field plate groove grid AlGaN/GaNHEMT device architecture and a manufacture method specifically, can be used for the AlGaN/GaN High Electron Mobility Transistor making high-breakdown-voltage, low on-resistance and high-frequency characteristic.
Technical background
, the characteristic such as breakdown electric field high, thermal conductivity high, saturated electrons speed large and heterojunction boundary two-dimensional electron gas high large with its energy gap with SiC and GaN the 3rd band wide bandgap semiconductor that is representative, makes it be subject to extensive concern in recent years.In theory, the device such as high electron mobility transistor (HEMT), LED, laser diode LD utilizing these materials to make has obvious advantageous characteristic than existing device, therefore researcher has carried out extensive and deep research to it both at home and abroad in the last few years, and achieves the achievement in research attracted people's attention.
AlGaN/GaN heterojunction high electron mobility transistor (HEMT) has shown advantageous advantage in high-temperature device and HIGH-POWERED MICROWAVES device, and pursuit device high-frequency, high pressure, high power have attracted numerous research.In recent years, the another study hotspot that higher frequency high pressure AlGaN/GaNHEMT becomes concern is made.After AlGaN/GaN heterojunction grown, just there is a large amount of two-dimensional electron gas 2DEG in heterojunction boundary, and its mobility is very high.In raising AlGaN/GaN heterojunction electron mobility transistor puncture voltage, people have carried out large quantifier elimination, find that puncturing of AlGaN/GaNHEMT device mainly occurs in grid near drain electrode side, therefore the puncture voltage of device will be improved, the electric field redistribution in grid leak region must be made, especially reduce the electric field of gate edge, for this reason, there has been proposed the method adopting field plate structure; In raising AlGaN/GaN heterojunction electron mobility transistor frequency characteristic, use slot grid structure, allow gate electrode have better control effects to 2DEG.
(1) field plate structure is specifically see the NovelAlGaN/GaNdual-field-plateFETwithhighgain of YujiAndo, AkioWakejima, YasuhiroOkamoto etc., increasedlinearityandstability, IEDM2005, pp.576-579,2005.In AlGaN/GaNHEMT device, adopt field plate structure, the puncture voltage of device significantly can be improved, and can gate leakage capacitance be reduced, improve the linearity and the stability of device.
(2) slot grid structure is specifically see the Recessed-gateenhancement-modeGaNHEMTwithhighthresholdvol tage of W.B.Lanford, T.Tanaka, Y.Otoki etc., ELECTRONICSLETTERS2005, Vol.41, No.7,2005.In AlGaN/GaNHEMT device, adopt slot grid structure effectively can increase the frequency characteristic of device.
But current AlGaN/GaNHEMT device performance in withstand voltage, conducting resistance and frequency characteristic etc. can't meet the needs of practical application.
Summary of the invention
The object of the present invention is to provide a kind of composite step field plate groove grid AlGaN/GaNHEMT device, realize high pressure, low on-resistance and high-frequency characteristic device architecture and preparation method thereof.
The present invention is achieved in that
A kind of composite step field plate groove grid AlGaN/GaNHEMT device architecture, it is characterized in that, comprise the substrate of compound successively from bottom to up, GaN resilient coating, AlN separator, GaN channel layer, intrinsic AlGaN layer and AlGaN doped layer, two ends on AlGaN doped layer are respectively equipped with source electrode and drain electrode, AlGaN doped layer near drain electrode is provided with LiF layer, this LiF layer is provided with leakage field plate; AlGaN doped layer between this LiF layer and source electrode is provided with organic insulating medium layer, this organic insulating medium layer is made up of three layers of ladder, ladder raises to drain directions successively from grid, the AlGaN doped layer on the minimum step side of this organic insulating medium layer is provided with grid groove, in this grid groove He above organic insulating medium layer, is provided with ladder field plate; Exposed region on AlGaN doped layer is provided with passivation layer.
The material of described substrate comprises sapphire, SiC, GaN or MgO.
In described AlGaN doped layer, the compositional range of Al and Ga is according to Al
xga
1-xn regulates, wherein x=0 ~ 1.
Described organic insulating medium layer is PTFE.
The material of described passivation layer comprises SiN, Al
2o
3or HfO
2.
Between described ladder field plate and AlGaN potential barrier, use PTFE material as dielectric layer, to reduce the 2DEG concentration of device.
Between described leakage field plate and AlGaN potential barrier, use LiF material as dielectric layer, to increase the 2DEG concentration of device.
A manufacture method for described composite step field plate groove grid AlGaN/GaNHEMT device, is characterized in that, comprise following processing step: (1) is cleaned; (2) region meas is etched with: (3) prepare source, drain electrode; (4) etching grid groove; (5) organic insulating medium layer is prepared; (6) ladder field plate is prepared; (7) preparation of LiF layer; (8) field plate is leaked in preparation: (9) prepare passivation layer; (10) thick electrode is added.
According to above-mentioned technical thought, the manufacture craft of composite step field plate groove grid AlGaN/GaNHEMT high pressure, high-frequency element, comprises the steps:
(1) clean: organic washing is carried out to epitaxially grown AlGaN/GaN material, with flowing washed with de-ionized water and put into HCl:H
2carry out corrosion 30 ~ 60s in the solution of O=1:1, finally with flowing washed with de-ionized water and dry up with high pure nitrogen;
(2) region meas is etched with: photoetching and dry etching are carried out to the AlGaN/GaN material cleaned up, is formed with region meas;
(3) source, drain electrode is prepared: photoetching is carried out to the AlGaN/GaN material preparing table top, form source-drain area, put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=(20/120/45/50nm) and peel off, the last rapid thermal annealing carrying out 850 DEG C of 35s in nitrogen environment, forms ohmic contact;
(4) etching grid groove: carry out photoetching to the device completing ohmic contact, form grid etch region, put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, AlGaN potential barrier is etched away 5 ~ 10nm, then device is put into HCl:H
2process 30s in O=1:1 solution, remove etch residue;
(5) organic insulating medium layer is prepared: photoetching is carried out to the device completing groove grid etching, form organic dielectric PTFE depositing region, then put into oxygen plasma treatment room and mild oxidation treatments is carried out to AlGaN surface, then put into electron beam evaporation platform, reative cell vacuum is evacuated to 4.0 × 10
-3handkerchief, slow making alive makes control PTFE evaporation rate be 0.1nm/s, the PTFE film that deposit 100nm is thick, the device of good for deposit PTFE medium is put into acetone soln and soaks 30 ~ 60min, carry out ultrasonic stripping; This step is repeated twice, forms the PTFE layer of three layers of notch cuttype;
(6) ladder field plate is prepared: photoetching is carried out to the device completing PTFE stripping, form grid and ladder field plate region, put into the ITO grid metal that electron beam evaporation platform deposit 400nm is thick, the device of good for deposit gate electrode and ladder field plate is put into acetone soln immersion 30 ~ 60min, carry out ultrasonic stripping, form ladder field plate structure;
(7) preparation of LiF layer: carrying out photoetching by completing device prepared by grid, forming the depositing region of dielectric LiF, then putting into electron-beam reaction room vacuum and be evacuated to 4.0 × 10
-3handkerchief, slow making alive makes control LiF evaporation rate be 0.5nm/s, the LiF film that deposit 100 ~ 200nm is thick, the device of good for deposit LiF medium is put into acetone soln and soaks 30 ~ 60min, carry out ultrasonic stripping, form LiF layer;
(8) field plate is leaked in preparation: again carry out photoetching to completing device prepared by LiF, formed and leak field plate region, put into the Al metal that electron beam evaporation platform deposit 200nm is thick, the device of good for deposit Al metal is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping, formed and leak field plate structure;
(9) passivation layer is prepared: the device completed is put into PECVD reative cell deposit SiN passivating film, concrete technology condition is: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1 ~ 2Pa, radio-frequency power is 40W, the SiN passivating film that deposit 200nm ~ 300nm is thick, is again carried out by device cleaning, photoetching development, form the etched area of SiN film, and put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, chamber pressure is 1.5Pa, CF
4flow be the flow of 20sccm, Ar gas be 10sccm, etch period is 10min, is etched away by the SiN film that source electrode, drain electrodes cover;
(10) add thick electrode: carried out by device cleaning, photoetching development, and put into electron beam evaporation platform deposit Ti/Au=20/200nm add thick electrode, complete the preparation of integral device.
Compared with prior art, advantage of the present invention is:
(1) this device employs the dipole layer that PTFE and ITO is formed, and reduces the concentration of 2DEG immediately below this region, changes the Electric Field Distribution in grid leak region, improve the puncture voltage of device;
(2) this device employs the dipole layer that LiF and Al is formed, and improves the 2DEG concentration immediately below this region, reduces the conducting resistance between device gate-drain;
(3) this device employs slot grid structure, adds the control ability of gate electrode to the 2DEG concentration under grid, improves the frequency characteristic of device.
(4) this device adopts ITO and Al form ladder field plate respectively and leak field plate simultaneously, introduces three peak electric field, introduce a peak electric field, improve the puncture voltage of device near drain electrode near grid.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of device of the present invention;
Fig. 2 is the fabrication processing schematic diagram of device of the present invention.
Embodiment
With reference to Fig. 1, a kind of composite step field plate groove grid AlGaN/GaNHEMT device architecture of the present invention, comprises substrate 1, GaN resilient coating 2, AlN separator 3, GaN channel layer 4, intrinsic AlGaN layer 5, AlGaN doped layer 6, PTFE organic insulating medium layer 10 and LiF layer 8, ITO ladder field plate 12, Al leaks field plate 9, passivation layer 13, drain electrode 7 and source electrode 14.Device architecture is from the bottom up respectively: substrate 1, GaN resilient coating 2, AlN separator 3, GaN channel layer 4, intrinsic AlGaN layer 5, AlGaN doped layer 6, source electrode 14 is provided with on AlGaN doped layer 6, drain electrode 7, organic insulating medium layer 10, LiF layer 8, ITO ladder field plate 12 and passivation layer 13, source electrode 14 and drain electrode 7 are located at the two ends on AlGaN doped layer 6, LiF layer 8 is close to drain electrode 7, organic insulating medium layer 10 is established between LiF layer 8 and source electrode 14, gate recess 11 is provided with on the AlGaN doped layer 6 on the side of next-door neighbour's organic insulating medium layer 10, ITO ladder field plate 12 is provided with in this gate recess 11 He above organic insulating medium layer 10, ITO ladder field plate 12 is equivalent to regular grid and extends to above organic insulating medium layer 10, together with being produced on gate electrode in process.The ladder of ITO ladder field plate 12 raises to drain directions successively from grid, and the AlGaN doped layer 6 on the minimum step side of this organic insulating medium layer 10 is provided with grid groove 11.On LiF layer 8, be provided with Al leak field plate 9, all the other regions on AlGaN doped layer 6 are deposited with passivation layer 13.
See Fig. 2, the manufacture craft of composite step field plate groove grid AlGaN/GaNHEMT device of the present invention, comprises the steps:
(1) organic washing is carried out to epitaxially grown AlGaN/GaN material, with flowing washed with de-ionized water and put into HCl:H
2in the solution of O=1:1 corrode 30 ~ 60s, finally with flow washed with de-ionized water and dry up with high pure nitrogen;
(2) photoetching and dry etching are carried out to the AlGaN/GaN material cleaned up, be formed with region meas;
(3) photoetching is carried out to the AlGaN/GaN material preparing table top, formation source, drain region, put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=(20/120/45/50nm) and peel off, the last rapid thermal annealing carrying out 850 DEG C of 35s in nitrogen environment, forms ohmic contact;
(4) carry out photoetching to the device completing ohmic contact, form grid etch region, put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, AlGaN potential barrier is etched away 5 ~ 10nm, then device is put into HCl:H
2process 30s in O=1:1 solution, remove etch residue;
(5) photoetching is carried out to the device completing groove grid etching, form organic dielectric PTFE depositing region, then put into oxygen plasma treatment room and mild oxidation treatments is carried out to AlGaN surface, then put into electron beam evaporation platform: reative cell vacuum is evacuated to 4.0 × 10
-3handkerchief, slow making alive control PTFE evaporation rate is 0.1nm/s, the PTFE film that deposit 100nm is thick; This step is repeated twice, forms the PTFE layer of three layers of notch cuttype;
(6) device of good for deposit PTFE medium is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping;
(7) photoetching is carried out to the device completing PTFE stripping, form grid and ladder field plate region, put into the ITO grid metal that electron beam evaporation platform deposit 400nm is thick;
(8) device of good for deposit gate electrode and ladder field plate is put into acetone soln immersion 30 ~ 60min, carry out ultrasonic stripping, form ladder field plate structure;
(9) carrying out photoetching by completing device prepared by grid, forming the depositing region of dielectric LiF, then putting into electron-beam reaction room vacuum and be evacuated to 4.0 × 10
-3handkerchief, slow making alive control LiF evaporation rate is 0.5nm/s, the LiF film that deposit 100 ~ 200nm is thick;
(10) device of good for deposit LiF medium is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping;
(11) again carrying out photoetching to completing device prepared by LiF, being formed and leaking field plate region, putting into the Al metal that electron beam evaporation platform deposit 200nm is thick;
(12) device of good for deposit Al metal is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping, formed and leak field plate structure;
(13) device completed is put into PECVD reative cell deposit SiN passivating film, concrete technology condition is: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1 ~ 2Pa, and radio-frequency power is 40W, the SiN passivating film that deposit 200nm ~ 300nm is thick;
(14) device is carried out again clean, photoetching development, form the etched area of SiN film, and put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF
4flow be the flow of 20sccm, Ar gas be 10sccm, etch period is 10min, is etched away by the SiN film that source electrode, drain electrodes cover;
(15) device is carried out clean, photoetching development, and put into electron beam evaporation platform deposit Ti/Au=20/200nm add thick electrode, complete the preparation of integral device.
The preparation technology of described substrate 1, GaN resilient coating 2, AlN separator 3, GaN channel layer 4, intrinsic AlGaN layer 5, AlGaN doped layer 6 is routine techniques.
Claims (9)
1. a composite step field plate groove grid AlGaN/GaNHEMT device architecture, it is characterized in that, comprise the substrate of compound successively from bottom to up, GaN resilient coating, AlN separator, GaN channel layer, intrinsic AlGaN layer and AlGaN doped layer, two ends on AlGaN doped layer are respectively equipped with source electrode and drain electrode, AlGaN doped layer near drain electrode is provided with LiF layer, this LiF layer is provided with leakage field plate; AlGaN doped layer between this LiF layer and source electrode is provided with organic insulating medium layer, this organic insulating medium layer is made up of three layers of ladder, ladder raises to drain directions successively from grid, the AlGaN doped layer on the minimum step side of this organic insulating medium layer is provided with grid groove, in this grid groove He above organic insulating medium layer, is provided with ladder field plate; Exposed region on AlGaN doped layer is provided with passivation layer.
2. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, it is characterized in that, the material of described substrate comprises sapphire, SiC, GaN or MgO.
3. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, is characterized in that, in described AlGaN doped layer, the compositional range of Al and Ga is according to Al
xga
1-xn regulates, wherein x=0 ~ 1.
4. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, it is characterized in that, described organic insulating medium layer is PTFE.
5. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, it is characterized in that, the material of described passivation layer comprises SiN, Al
2o
3or HfO
2.
6. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, is characterized in that, between described ladder field plate and AlGaN potential barrier, use PTFE material as dielectric layer, to reduce the 2DEG concentration of device.
7. composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, is characterized in that, between described leakage field plate and AlGaN potential barrier, use LiF material as dielectric layer, to increase the 2DEG concentration of device.
8. a manufacture method for composite step field plate groove grid AlGaN/GaNHEMT device according to claim 1, is characterized in that, comprise following processing step: (1) is cleaned; (2) region meas is etched with: (3) prepare source, drain electrode; (4) etching grid groove; (5) organic insulating medium layer is prepared; (6) ladder field plate is prepared; (7) preparation of LiF layer; (8) field plate is leaked in preparation: (9) prepare passivation layer; (10) thick electrode is added.
9. the manufacture method of composite step field plate groove grid AlGaN/GaNHEMT device according to claim 8, it is characterized in that, concrete technology is as follows:
(1) clean: organic washing is carried out to epitaxially grown AlGaN/GaN material, with flowing washed with de-ionized water and put into HCl:H
2carry out corrosion 30 ~ 60s in the solution of O=1:1, finally with flowing washed with de-ionized water and dry up with high pure nitrogen;
(2) region meas is etched with: photoetching and dry etching are carried out to the AlGaN/GaN material cleaned up, is formed with region meas;
(3) source, drain electrode is prepared: photoetching is carried out to the AlGaN/GaN material preparing active region mesa, form source-drain area, put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=(20/120/45/50nm) and peel off, the last rapid thermal annealing carrying out 850 DEG C of 35s in nitrogen environment, forms ohmic contact;
(4) etching grid groove: carry out photoetching to the device completing ohmic contact, form grid etch region, put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, AlGaN potential barrier is etched away 5 ~ 10nm, then device is put into HCl:H
2process 30s in O=1:1 solution, remove etch residue;
(5) organic insulating medium layer is prepared: photoetching is carried out to the device completing groove grid etching, form organic dielectric PTFE depositing region, then put into oxygen plasma treatment room and mild oxidation treatments is carried out to AlGaN surface, then put into electron beam evaporation platform: reative cell vacuum is evacuated to 4.0 × 10
-3handkerchief, slow making alive makes control PTFE evaporation rate be 0.1nm/s, the PTFE film that deposit 100nm is thick, the device of good for deposit PTFE medium is put into acetone soln and soaks 30 ~ 60min, carry out ultrasonic stripping; This step is repeated twice, forms the PTFE layer of three layers of notch cuttype;
(6) ladder field plate is prepared: photoetching is carried out to the device completing PTFE stripping, forms grid and ladder field plate region, put into the grid metal that electron beam evaporation platform deposit 400nm is thick; Put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping, form ladder field plate structure;
(7) preparation of LiF layer: carrying out photoetching by completing device prepared by grid, forming the depositing region of dielectric LiF layer, then putting into electron-beam reaction room vacuum and be evacuated to 4.0 × 10
-3handkerchief, slow making alive makes control LiF evaporation rate be 0.5nm/s, the LiF film that deposit 100 ~ 200nm is thick; The device of good for deposit LiF film is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping, form LiF layer;
(8) field plate is leaked in preparation: carrying out photoetching to completing device prepared by LiF layer, being formed and leaking field plate region, putting into the Al metal that electron beam evaporation platform deposit 200nm is thick; The device of good for deposit Al metal is put into acetone soln and soak 30 ~ 60min, carry out ultrasonic stripping, formed and leak field plate structure;
(9) passivation layer is prepared: the device completed is put into PECVD reative cell deposit SiN passivating film, concrete technology condition is: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1 ~ 2Pa, and radio-frequency power is 40W, the SiN passivating film that deposit 200nm ~ 300nm is thick;
Device is carried out again clean, photoetching development, form the etched area of SiN film, and put into ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF
4flow be the flow of 20sccm, Ar gas be 10sccm, etch period is 10min, is etched away by the SiN film that source electrode, drain electrodes cover;
(10) add thick electrode: carried out by device cleaning, photoetching development electrode zone, complete electrode fabrication, concrete technology is: device is put into electron beam evaporation platform deposit Ti/Au=20/200nm.
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| CN113097291A (en) * | 2021-03-31 | 2021-07-09 | 浙江集迈科微电子有限公司 | GaN device structure and preparation method thereof |
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