CN104051521B - High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof - Google Patents
High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a high-performance AlGaN/GaN HEMT switching device structure based on an organic medium and a manufacturing method of the high-performance AlGaN/GaN HEMT switching device structure. The high-performance AlGaN/GaN HEMT switching device structure sequentially comprises a substrate, a GaN buffering layer, an AlN isolating layer, a GaN channel layer, an AlGaN intrinsic layer and an AlGaN doped layer from bottom to top. A source electrode, a first passivation layer, an ITO gate electrode, an organic PTFE insulating layer, a second passivation layer and a drain electrode are arranged on the AlGaN doped layer at intervals; the ITO gate electrode is arranged between the first passivation layer and the organic PTFE insulating layer; and a second ITO electrode is arranged on the organic insulating layer; the second passivation layer is arranged between the organic insulating layer and the drain electrode. The concentration of 2DEG of the controlled part is reduced successfully, damage to crystal lattices of materials is avoided, and the range of breakdown voltage is greatly widened by using the ITO field plate effect, so that the performance of the device is promoted substantially.
Description
Technical field
The present invention relates to microelectronics technology, more particularly, to a kind of high-performance AlGaN/GaN based on organic media
HEMT switching device structures and preparation method thereof.
Background technology
The 3rd bandwidth forbidden band gap semiconductor with SiC and GaN as representative is so that its energy gap is big, breakdown electric field in recent years
High, thermal conductivity is high, saturated electrons speed is big and the characteristic such as heterojunction boundary two-dimensional electron gas height so as to extensively closed
Note.In theory, using the high electron mobility transistor (HEMT) of these materials making, LED, laser diode
The devices such as LD have an obvious advantageous characteristic than existing device, thus in the last few years domestic and international researcher which has been carried out extensively and
In-depth study, and achieve the achievement in research for attracting people's attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) in terms of high-temperature device and HIGH-POWERED MICROWAVES device
Advantageous advantage is shown, device altofrequency, high pressure, high power is pursued and has been attracted numerous researchs.In recent years, make
Higher frequency high pressure AlGaN/GaN HEMT become the another study hotspot of concern.As the growth of AlGaN/GaN hetero-junctions is completed
Afterwards, heterojunction boundary there is a large amount of two-dimensional electron gas 2DEG, and its mobility is very high, thus we be obtained in that it is higher
Device frequency characteristic.In terms of AlGaN/GaN hetero-junctions electron mobility transistor breakdown voltages are improved, people have been carried out in a large number
Research, it is found that puncturing for AlGaN/GaN HEMT devices occurs mainly in grid by drain terminal, therefore the breakdown potential of device will be improved
Pressure, it is necessary to make the electric field redistribution in grid leak region, especially reduces electric field of the grid by drain terminal, for this purpose, there has been proposed adopting
The method of field plate structure：
Using field plate structure.Referring to the Novel of Yuji Ando, Akio Wakejima, Yasuhiro Okamoto etc.
AlGaN/GaN dual-field-plate FET with high gain,increased linearity and
stability,IEDM 2005,pp.576-579,2005.Field plate structure is adopted in AlGaN/GaN HEMT devices, by device
Breakdown potential be pressed with one and be greatly improved, and reduce gate leakage capacitance, improve the linearity and stability of device.
The content of the invention
The present invention is above-mentioned in order to overcome the shortcomings of, there is provided one kind can reduce 2DEG concentration, and performance has by a relatively large margin
High-performance AlGaN/GaN HEMT switching device structures based on organic media for being lifted and preparation method thereof.
Technical scheme is as follows：
A kind of high-performance AlGaN/GaN HEMT switching device structures based on organic media, include lining from the bottom up successively
Bottom, GaN cushions, AlN sealing coats, GaN channel layers, AlGaN intrinsic layers and AlGaN doped layers, on the AlGaN doped layers between
Every being provided with source electrode, passivation layer 1, organic insulator PTFE, passivation layer 2 and drain electrode, the passivation layer 1 and organic insulator PTFE it
Between be provided with ITO gate electrodes, the organic insulator PTFE is provided with ITO electrode 2, is provided between the organic insulator and drain electrode
Passivation layer 2.The backing material is sapphire, carborundum, GaN or MgO.
In the AlGaN doped layers, the constituent content of Al is between 0～1, the constituent content of Ga and the constituent content of Al it
With for 1.
The thickness of the organic insulator PTFE layers is 200～300nm.
The passivation layer 1 and 2 includes Si3N4、Al2O3、HfO2With one or more in HfSiO.
What the present invention was realized in：Organic insulator PTFE, Ran Hou are deposited near ITO gate electrodes are by drain edge
ITO electrode 2 is deposited in PTFE structures, now can produce dipole layer on PTFE surfaces：PTFE and ITO sides can produce just from
Son, PTFE can produce anion with AlGaN sides, so as to generate depletion action to the 2DEG concentration of lower section, result in 2DEG
The reduction of concentration, increased the depletion length in gate electrode reverse-biased lower channel region, so as to improve hitting for depletion device
Wear voltage, and while adopt field plate structure, improve the numerical value of breakdown voltage again.
The making step of the above-mentioned high-performance AlGaN/GaN HEMT switching device structures based on organic media is as follows：
(1) organic washing is carried out to epitaxially grown AlGaN/GaN materials, is cleaned with the deionized water of flowing and placed into
HCl:H2O=1:Corrode 30～60s in 1 solution, finally cleaned and dried up with high pure nitrogen with the deionized water of flowing；
(2) the AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, form active region mesa；
(3) the AlGaN/GaN materials to preparing table top carry out photoetching, form source-drain area, are put in electron beam evaporation platform
Deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm, and peeled off, finally carry out in nitrogen environment
850 DEG C, the rapid thermal annealing of 35s forms Ohmic contact；
(4) photoetching is carried out to device, is formed organic dielectric PTFE depositing regions, is then placed in oxygen plasma treatment room
In mild oxidation treatments are carried out to AlGaN surfaces, be then placed in electron beam evaporation platform：Reative cell vacuum is evacuated to 4.0 × 10-3
Handkerchief, slow making alive make to control PTFE evaporation rates for 0.1nm/s, deposit the thick PTFE thin film of 200～300nm；
(5) device to completing PTFE deposits carries out photoetching, forms gate electrode and grid field plate area, is put into electron beam steaming
The thick ITO of 200nm are deposited in sending out platform；
(6) device for having deposited gate electrode is put into into 30～60min of immersion in acetone soln, carries out ultrasonic stripping, formed
ITO gate electrodes and ITO electrode 2；
(7) device for completing grid preparation is put into into PECVD reative cells deposit Si3N4Passivating film；
(8) device is carried out again cleaning, photoetching development, form Si3N4The etched area of thin film, and it is put into ICP dry etchings
In reative cell, the Si that source electrode, drain electrodes are covered3N4Thin film is etched away；
(9) device is carried out cleaning, photoetching development, and deposit Ti/Au=20/200nm's in being put into electron beam evaporation platform
Electrode is thickeied, the preparation of integral device is completed.
Wherein, the process conditions in step (7) are：SiH4Flow be 40sccm, NH3Flow be 10sccm, reative cell
Pressure is 1～2Pa, and radio-frequency power is 40W, deposits the thick Si of 200nm～300nm3N4Passivating film；
Process conditions in step (8) in ICP dry etching reative cells are：Upper electrode power is 200W, lower electrode power
For 20W, chamber pressure is 1.5Pa, CF4Flow be 20sccm, the flow of Ar gas is 10sccm, and etch period is 10min.
The invention has the beneficial effects as follows：
(1) dipole layer using produced by PTFE and ITO of the invention realizes the control to 2DEG concentration, successfully subtracts
The concentration of the 2DEG of institute control section is lacked.
(2) on the one hand the present invention is avoided to material not using the method that F anion is injected AlGaN doped layers
Lattice damage, on the other hand it also avoid F ion be moved in high temperature cause device threshold voltage occur drift.
(3) present invention utilizes the field plate effect of ITO considerably increases the scope of breakdown voltage so that the performance of device has
Lifting by a relatively large margin.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the schematic diagram of invention；
Fig. 2 is the Making programme figure of invention.
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are simplified schematic diagram, only with
The basic structure of the illustration explanation present invention, therefore which only shows the composition relevant with the present invention.
The high-performance AlGaN/GaN HEMT switching device structures based on organic media as shown in Figure 1, from the bottom up according to
It is secondary including substrate, GaN cushions, AlN sealing coats, GaN channel layers, AlGaN intrinsic layers and AlGaN doped layers, the AlGaN mixes
Source electrode, passivation layer 1, organic insulator PTFE, passivation layer 2 and drain electrode, the passivation layer 1 and organic insulation is interval with diamicton
ITO gate electrodes are provided between layer PTFE, ITO electrode 2, the organic insulator and leakage on the organic insulator PTFE, is provided with
Passivation layer 2 is provided between pole.Wherein, the thickness of the organic insulator PTFE is 200～300nm.In addition, the backing material
For sapphire, carborundum, GaN or MgO, passivation layer 1 and 2 includes Si3N4、Al2O3、HfO2With one or more in HfSiO.
And in AlGaN doped layers the constituent content of Al between 0～1, the constituent content of Ga and the constituent content sum of Al are 1.
The present invention deposits organic insulator PTFE near grid is by drain edge, then deposits ITO in PTFE structures
Gate electrode, now can produce dipole layer on PTFE surfaces：Cation, PTFE and AlGaN mono- can be produced in PTFE with ITO sides
Side can produce anion, so as to generate depletion action to the 2DEG concentration of lower section, result in the reduction of 2DEG concentration, increased
The depletion length in gate electrode reverse-biased lower channel region, so as to improve the breakdown voltage of depletion device, and while adopts
Field plate structure, improves the numerical value of breakdown voltage again.
As shown in Fig. 2 the making step of the present invention is as follows：
(1) organic washing is carried out to epitaxially grown AlGaN/GaN materials, is cleaned with the deionized water of flowing and placed into
HCl:H2O=1:Corrode 30～60s in 1 solution, finally cleaned and dried up with high pure nitrogen with the deionized water of flowing；
(2) the AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, form active region mesa；
(3) the AlGaN/GaN materials to preparing table top carry out photoetching, form source-drain area, are put in electron beam evaporation platform
Deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm, and peeled off, finally carry out in nitrogen environment
850 DEG C, the rapid thermal annealing of 35s forms Ohmic contact；
(4) photoetching is carried out to device, is formed organic dielectric PTFE depositing regions, is then placed in oxygen etc.
Mild oxidation treatments are carried out to AlGaN surfaces in ion processing room, is then placed in electron beam evaporation platform：Reative cell
Vacuum is evacuated to 4.0 × 10-3Handkerchief, slow making alive make to control PTFE evaporation rates for 0.1nm/s, deposit 200～300nm thickness
PTFE thin film；
(5) device to completing PTFE deposits carries out photoetching, forms gate electrode and grid field plate area, is put into electron beam steaming
The thick ITO electrodes of 200nm are deposited in sending out platform；
(6) device for having deposited ITO gate electrodes and ITO electrode 2 is put into into 30～60min of immersion in acetone soln, is carried out
Ultrasound is peeled off, and forms gate field plate structures；
(7) device for completing grid preparation is put into into PECVD reative cells deposit Si3N4Passivating film, its process conditions is：
SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure be 1～2Pa, radio-frequency power is 40W, deposit
200nm～300nm thick Si3N4Passivating film；
(8) device is carried out again cleaning, photoetching development, form Si3N4The etched area of thin film, and it is put into ICP dry etchings
In reative cell, the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, and lower electrode power is 20W, instead
Chamber pressure is answered to be 1.5Pa, CF4Flow be 20sccm, the flow of Ar gas is 10sccm, and etch period is 10min, by source electrode,
The Si that drain electrodes are covered3N4Thin film is etched away；
(9) device is carried out cleaning, photoetching development, and deposit Ti/Au=20/200nm's in being put into electron beam evaporation platform
Electrode is thickeied, the preparation of integral device is completed.
It is above-mentioned according to the present invention for enlightenment, by above-mentioned description, relevant staff completely can without departing from
In the range of this invention technological thought, various change and modification is carried out.The technical scope of this invention is not limited to
Content in description, it is necessary to determine its technical scope according to right.
Claims (7)
1. a kind of high-performance AlGaN/GaN HEMT switching device structures based on organic media, it is characterised in that from the bottom up
Include substrate, GaN cushions, AlN sealing coats, GaN channel layers, AlGaN intrinsic layers and AlGaN doped layers, the AlGaN successively
Source electrode, the first passivation layer, ITO gate electrodes, organic insulator PTFE, the second passivation layer and drain electrode, institute is interval with doped layer
State and between the first passivation layer and organic insulator PTFE, be provided with ITO gate electrodes, on the organic insulator PTFE, be provided with second
ITO electrode, is provided with the second passivation layer between the organic insulator and drain electrode.
2. high-performance AlGaN/GaN HEMT switching device structures based on organic media according to claim 1, which is special
Levy and be, the backing material is sapphire, carborundum, GaN or MgO.
3. high-performance AlGaN/GaN HEMT switching device structures based on organic media according to claim 1, which is special
Levy and be, in the AlGaN doped layers constituent content of Al between 0～1, the constituent content of Ga and the constituent content sum of Al
For 1.
4. high-performance AlGaN/GaN HEMT switching device structures based on organic media according to claim 1, which is special
Levy and be, the thickness of the PTFE layers is 200～300nm.
5. high-performance AlGaN/GaN HEMT switching device structures based on organic media according to claim 1, which is special
Levy and be, first and second passivation layer includes Si3N4、Al2O3、HfO2With one or more in HfSiO.
6. a kind of manufacture method of the high-performance AlGaN/GaN HEMT switching device structures based on organic media, its feature exist
In comprising the following steps：
(1) organic washing is carried out to epitaxially grown AlGaN/GaN materials, is cleaned with the deionized water of flowing and place into HCl:H2O
=1:Corrode 30～60s in 1 solution, finally cleaned and dried up with high pure nitrogen with the deionized water of flowing；
(2) the AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, form active region mesa；
(3) the AlGaN/GaN materials to preparing table top carry out photoetching, form source-drain area, deposit in being put into electron beam evaporation platform
Metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm, and peeled off, finally 850 DEG C are carried out in nitrogen environment,
The rapid thermal annealing of 35s, forms Ohmic contact；
(4) carry out photoetching to device, form organic dielectric PTFE depositing regions, it is right in oxygen plasma treatment room to be then placed in
AlGaN surfaces carry out mild oxidation treatments, are then placed in electron beam evaporation platform：Reative cell vacuum is evacuated to 4.0 × 10-3Handkerchief, delays
Slow making alive makes to control PTFE evaporation rates for 0.1nm/s, deposits the thick PTFE thin film of 200～300nm；
(5) device to completing PTFE deposits carries out photoetching, forms gate electrode and grid field plate area, is put into electron beam evaporation platform
Middle deposit 200nm thick ITO electrode；
(6) device for having deposited ITO gate electrodes and the second ITO electrode is put into into 30～60min of immersion in acetone soln, is surpassed
Sound is peeled off, and forms gate field plate structures；
(7) device for completing grid preparation is put into into PECVD reative cells deposit Si3N4Passivating film；
(8) device is carried out again cleaning, photoetching development, form Si3N4The etched area of thin film, and it is put into the reaction of ICP dry etchings
In room, the Si that source electrode, drain electrodes are covered3N4Thin film is etched away；
(9) device is carried out cleaning, photoetching development, and in being put into electron beam evaporation platform, deposit the thickening of Ti/Au=20/200nm
Electrode, completes the preparation of integral device.
7. the making of the high-performance AlGaN/GaN HEMT switching device structures based on organic media according to claim 6
Method, it is characterised in that
Process conditions in step (7) are：SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure be 1～
2Pa, radio-frequency power are 40W, deposit the thick Si of 200nm～300nm3N4Passivating film；
Process conditions in step (8) in ICP dry etching reative cells are：Upper electrode power is 200W, and lower electrode power is
20W, chamber pressure are 1.5Pa, CF4Flow be 20sccm, the flow of Ar gas is 10sccm, and etch period is 10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410312711.2A CN104051521B (en) | 2014-07-02 | 2014-07-02 | High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410312711.2A CN104051521B (en) | 2014-07-02 | 2014-07-02 | High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104051521A CN104051521A (en) | 2014-09-17 |
| CN104051521B true CN104051521B (en) | 2017-03-22 |
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