CN103839996A - Groove grid high-voltage device based on composite drain electrode and method for manufacturing same - Google Patents
Groove grid high-voltage device based on composite drain electrode and method for manufacturing same Download PDFInfo
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- CN103839996A CN103839996A CN201410033307.1A CN201410033307A CN103839996A CN 103839996 A CN103839996 A CN 103839996A CN 201410033307 A CN201410033307 A CN 201410033307A CN 103839996 A CN103839996 A CN 103839996A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract 4
- 239000002131 composite material Substances 0.000 title abstract description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 97
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 54
- 150000001875 compounds Chemical class 0.000 claims description 44
- 238000001259 photo etching Methods 0.000 claims description 27
- 238000001312 dry etching Methods 0.000 claims description 24
- 239000000470 constituent Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 230000003139 buffering effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a groove grid high-voltage device based on a composite drain electrode and a method for manufacturing the groove grid high-voltage device. The groove grid high-voltage device sequentially comprises a substrate, a GaN buffering layer, a GaN channel layer, an AlN separation layer, an intrinsic AlGaN layer and an AlGaN barrier layer from bottom to top. A source electrode, a grid electrode and the composite drain electrode are arranged on the AlGaN barrier layer at intervals, a linear AlGaN layer is further arranged between the grid electrode and the composite drain electrode, a p-GaN layer is arranged on the linear AlGaN layer, a base electrode is arranged on the P-GaN layer, a passivation layer is further deposited on the top layer of the base electrode at intervals, and a thickened electrode is deposited in the intervals of the passivation layer. Because turn-on resistance is reduced when the groove grid high-voltage device is powered on, breakdown voltage increases when the groove grid high-voltage device is powered off, the breakdown voltage of the device increases and the break-over resistance of the device is reduced; meanwhile, because the groove grid structure is adopted, the regulation and controlling effect of the grid electrode on the channel 2DEG is strengthened, and the frequency performance of the device is improved.
Description
Technical field
The present invention relates to microelectronics technology, especially relate to a kind of groove grid high tension apparatus based on compound drain electrode and preparation method thereof.
Background technology
The 3rd bandwidth bandgap semiconductor take SiC and GaN as representative is large with its energy gap in recent years, breakdown electric field is high, thermal conductivity is high, saturated electrons speed is large and the characteristic such as heterojunction boundary two-dimensional electron gas height, makes it be subject to extensive concern.In theory, utilize the devices such as high electron mobility transistor (HEMT) that these materials make, LED, laser diode LD to there is obvious advantageous characteristic than existing device, therefore researcher has carried out extensive and deep research to it both at home and abroad in the last few years, and has obtained the achievement in research attracting people's attention.
AlGaN/GaN heterojunction high electron mobility transistor (HEMT) is demonstrating advantageous advantage aspect high-temperature device and HIGH-POWERED MICROWAVES device, and pursuit device high-frequency, high pressure, high power have attracted numerous research.In recent years, make higher frequency high pressure AlGaN/GaN HEMT and become the another study hotspot of concern.Due to after AlGaN/GaN heterojunction grown, just there are a large amount of two-dimensional electron gas 2DEG in heterojunction boundary, and its mobility is very high, and therefore we can obtain higher device frequency characteristic.Aspect raising AlGaN/GaN heterojunction electron mobility transistor puncture voltage, people have carried out a large amount of research, find that puncturing of AlGaN/GaN HEMT device mainly occurs in grid by drain terminal, therefore to improve the puncture voltage of device, must make the electric field redistribution in grid leak region, especially reduce the electric field of grid by drain terminal, for this reason, people have proposed to adopt the method for field plate structure:
1. adopt field plate structure, referring to Yuji Ando, Akio Wakejima, the Novel AlGaN/GaN dual-field-plate FET with high gain of Yasuhiro Okamoto etc., increased linearity and stability, IEDM2005, pp.576-579,2005.In AlGaN/GaN HEMT device, adopt grid field plate and source field plate structure simultaneously, the puncture voltage of device is brought up to the 250V adopting two field plates from the 125V of independent employing grid field plate, and reduced gate leakage capacitance, improved the linearity and the stability of device.
2. adopt super-junction structures, referring to Akira Nakajima, Yasunobu Sumida, the GaN based super heterojunction field effect transistors using the polarization junction concept of Mahesh H.In this device architecture, have 2DEG and 2DEH simultaneously, in the time of grid forward bias, there is not any variation in the concentration of 2DEG, therefore the conducting resistance of device can not increase, in the time of grid reverse bias, 2DEG in raceway groove can exhaust due to electric discharge, thereby has improved the puncture voltage (being increased to 560V from 110V) of device, and conducting resistance is 6.1m Ω cm
2.
Summary of the invention
The present invention, in order to overcome above-mentioned deficiency, provides a kind of and has taken into account the increase of puncture voltage and reducing of conducting resistance, and has improved the groove grid high tension apparatus based on compound drain electrode of the frequency performance of device.
Technical scheme of the present invention is as follows:
A kind of groove grid high tension apparatus based on compound drain electrode, comprise successively substrate, GaN resilient coating, GaN channel layer, AlN separator, intrinsic AlGaN layer and AlGaN barrier layer from bottom to top, on described AlGaN barrier layer, be interval with source electrode, grid and compound drain electrode, between described grid and compound drain electrode, be also provided with linear AlGaN layer, linear AlGaN layer is provided with p-GaN layer, p-GaN layer is provided with base stage, the top layer of said structure also interval is deposited with passivation layer, in the interval of described passivation layer, is deposited with and adds thick electrode.
Described substrate is one or more in sapphire, carborundum, GaN and MgO.
In described AlGaN barrier layer, the constituent content of Al is between 0～1, and the constituent content sum of the constituent content of Ga and Al is 1.
In described linear AlGaN layer, the component content of Al is between 0～1, and is increased to y from x linearity, and the thickness of linear AlGaN layer is L, and wherein the Al constituent content at arbitrary thickness L1 place is (y-x) × L1/L.
In described passivation layer, comprise SiN, Al
2o
3and HFO
2in one or more.
P-GaN layer between described grid and compound drain electrode and the simultaneous peak width d of linear AlGaN layer
1>0, only has the peak width d of linear AlGaN layer
2>0.
The width d of described compound drain electrode on linear AlGaN layer
4between 0～1 μ m.
Wherein, GaN channel layer can replace with AlGaN channel layer, and during with AlGaN channel layer, in AlGaN channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN barrier layer.P-GaN layer can replace with InGaN layer, and during with InGaN layer, the constant or In component of the constituent content of In increases gradually.
The present invention is based on the groove grid high tension apparatus of compound drain electrode, above the AlGaN barrier layer between grid and drain electrode, extension has linear AlGaN layer, and extension has p-GaN layer above the subregion of linear AlGaN layer, and is prepared with electrode on p-GaN layer.P-GaN epitaxial loayer and the simultaneous region of linear AlGaN layer between grid and drain electrode are referred to as to first area, only have the region of linear AlGaN layer to be referred to as second area.Such structure can make device in the time of conducting state, while being grid voltage >=0V, the increase of the AlGaN/GaN interface 2DEG concentration under first area is almost identical with the increase of the 2DEG concentration of the AlGaN/GaN interface under second area, all be greater than the 2DEG density in raceway groove, therefore the resistance of first area and second area all reduces to some extent, and the conducting resistance of device has also obtained reduction; When device is during in cut-off state, while being grid voltage≤threshold voltage, 2DEG in grid lower channel is depleted, meanwhile because base electrode is electrically connected with grid, therefore the 2DEG concentration under first area reduces to some extent, is even reduced to 50%, and the depletion region of device is widened to some extent, can bear the region of high electric field and be widened, device electric breakdown strength is improved; In addition, the 2DEG concentration under second area is identical during with conducting state, is conducive to the redistribution of electric field, and the use of drain electrode field plate guarantees that peak electric field there will not be in drain electrode place, and device electric breakdown strength is improved again.Therefore the conducting resistance of this structure in the time of break-over of device reduced, and puncture voltage in the time of cut-off state is improved, and taken into account the raising of device electric breakdown strength and reducing of conducting resistance.Device adopts slot grid structure simultaneously, has strengthened the regulating and controlling effect of grid to raceway groove 2DEG, has improved the frequency performance of device.
The making step of the above-mentioned groove grid high tension apparatus based on compound drain electrode is as follows:
(1) the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to the step of organic washing;
(2) the AlGaN/GaN material cleaning up is carried out to photoetching and dry etching, be formed with the step of source region table top;
(3) the AlGaN/GaN material for preparing table top is carried out to photoetching, form the etched area of p-GaN and linear AlGaN layer, put into again ICP dry etching reative cell, by the p-GaN layer of Zone Full and grid, source electrode and compound drain electrode top between grid and source electrode and the step that linear AlGaN layer all etches away;
(4) device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm, and peel off, finally in nitrogen environment, carry out 850 ℃, the rapid thermal annealing of 35s, the step of formation ohmic contact;
(5) device for preparing ohmic contact is carried out to photoetching, form the etched area of p-GaN layer, put into again ICP dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, form first area between grid and compound drain electrode and the step of second area simultaneously;
(6) device is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au=20/20nm and peel off, finally in atmospheric environment, carry out 550 ℃, the annealing of 10min, the step of formation base stage ohmic contact;
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, then put into ICP dry etching reative cell, AlGaN barrier layer is etched away to 5～10nm, and then remove etch residue, form the step of slot grid structure;
(8) device is carried out to photoetching, form gate metal and drain electrode field plate region, then put into electron beam evaporation platform deposit Ni/Au=20/200nm and peel off, complete step prepared by grid and drain electrode field plate;
(9) put into the step of PECVD reative cell deposit SiN passivating film to completing grid and the device prepared of drain electrode field plate;
(10) to device clean, photoetching development, the step that the SiN film that source electrode, grid and compound drain electrode are covered above etches away;
(11) to device again clean, photoetching development, and put into the thick electrode that adds of electron beam evaporation platform deposit Ti/Au=20/200nm, complete the preparation of integral device.
Wherein, in step (1), adopt mobile washed with de-ionized water and put into HCl:H
2in the solution of O=1:1, corrode 30～60s, finally dry up by mobile washed with de-ionized water and with high pure nitrogen;
In step (3), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 5min～8min;
In step (5), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 3min～5min; In this step, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, and second area is the region that only has linear AlGaN layer;
In step (7), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, and by HCl:H
2in O=1:1 solution, process 30s, remove etch residue;
In step (9), the process conditions of PECVD reative cell are: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1～2Pa, radio-frequency power is 40W, the SiN passivating film that deposit 200nm～300nm is thick;
In step (10), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF
4flow be 20sccm, the flow of argon gas is 10sccm, etch period is 10min.
Beneficial effect of the present invention is as follows:
(1) when the present invention adopts the formation of first area, second area between grid and drain electrode to make break-over of device, the 2DEG concentration of first area and second area increases, and resistance is reduced, and reaches the object that reduces device conducting resistance;
(2) when the present invention adopts first area between device grids and drain electrode, second area formation to make device cut-off, the 2DEG of first area is reduced, the 2DEG of second area is identical during with break-over of device, increase the width of device depletion region, change Electric Field Distribution, reached the object that improves device electric breakdown strength;
(3) the present invention adopts compound drain electrode structure, and the field plate composite construction that drains and drain prevents that peak electric field from appearring in drain edge, has improved the puncture voltage of device;
(4) the present invention adopts slot grid structure, has strengthened the control action of grid to raceway groove 2DEG, has improved the frequency performance of device.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the structural representation of the groove grid high tension apparatus based on compound drain electrode in the present invention;
Fig. 2 makes flow chart.
Embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, and basic structure of the present invention is only described in a schematic way, and therefore it only shows the formation relevant with the present invention.
The groove grid high tension apparatus based on compound drain electrode as shown in Figure 1, comprise successively substrate 1, GaN resilient coating 2, GaN channel layer 3, AlN separator 4, intrinsic AlGaN layer 5 and AlGaN barrier layer 6 from bottom to top, on described AlGaN barrier layer 6, be interval with source electrode 7, grid 8 and compound drain electrode 9, between described grid 8 and compound drain electrode 9, be also provided with linear AlGaN layer 10, linear AlGaN layer 10 is provided with p-GaN layer 11, p-GaN layer 11 is provided with base stage 12, the top layer of said structure also interval is deposited with passivation layer 13, is deposited with and adds thick electrode 14 in the interval of described passivation layer 13.Wherein, described substrate 1 is one or more in sapphire, carborundum, GaN and MgO.In described AlGaN barrier layer 6, the constituent content of Al is between 0～1, and the constituent content sum of the constituent content of Ga and Al is 1.In described linear AlGaN layer, the component content of Al is between 0～1, and is increased to y from x linearity, and the thickness of linear AlGaN layer is L, and wherein the Al constituent content at arbitrary thickness L1 place is (y-x) × L1/L.In described passivation layer 13, comprise SiN, Al
2o
3and HFO
2in one or more.P-GaN layer 11 between described grid 8 and compound drain electrode 9 and the simultaneous peak width d of linear AlGaN layer 10
1>0, only has the peak width d of linear AlGaN layer 10
2>0.The width d of described compound drain electrode 9 on linear AlGaN layer 10
4between 0～1 μ m.
In said structure, GaN channel layer 3 can replace with AlGaN channel layer, and during with AlGaN channel layer, in AlGaN channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN barrier layer 6.P-GaN layer 11 can replace with InGaN layer, and during with InGaN layer, the constant or In component of the constituent content of In increases gradually.
The present invention's extension above the AlGaN barrier layer between grid and drain electrode has linear AlGaN layer, and extension has p-GaN layer above the subregion of linear AlGaN layer, and is prepared with electrode on p-GaN layer.P-GaN epitaxial loayer and the simultaneous region of linear AlGaN layer between grid and drain electrode are referred to as to first area, only have the region of linear AlGaN layer to be referred to as second area.Such structure can make device in the time of conducting state, while being grid voltage >=0V, the increase of the AlGaN/GaN interface 2DEG concentration under first area is almost identical with the increase of the 2DEG concentration of the AlGaN/GaN interface under second area, all be greater than the 2DEG density in raceway groove, therefore the resistance of first area and second area all reduces to some extent, and the conducting resistance of device has also obtained reduction; When device is during in cut-off state, while being grid voltage≤threshold voltage, 2DEG in grid lower channel is depleted, meanwhile because base electrode is electrically connected with grid, therefore the 2DEG concentration under first area reduces to some extent, is even reduced to 50%, and the depletion region of device is widened to some extent, can bear the region of high electric field and be widened, device electric breakdown strength is improved; In addition, the 2DEG concentration under second area is identical during with conducting state, is conducive to the redistribution of electric field, and the use of drain electrode field plate guarantees that peak electric field there will not be in drain electrode place, and device electric breakdown strength is improved again.Therefore the conducting resistance of this structure in the time of break-over of device reduced, and puncture voltage in the time of cut-off state is improved, and taken into account the raising of device electric breakdown strength and reducing of conducting resistance.Device adopts slot grid structure simultaneously, has strengthened the regulating and controlling effect of grid to raceway groove 2DEG, has improved the frequency performance of device.
As shown in Figure 2, making step of the present invention is as follows:
(1) the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to the step of organic washing, in this step, adopt mobile washed with de-ionized water and put into HCl:H
2in the solution of O=1:1, corrode 30～60s, finally dry up by mobile washed with de-ionized water and with high pure nitrogen;
(2) the AlGaN/GaN material cleaning up is carried out to photoetching and dry etching, be formed with the step of source region table top;
(3) the AlGaN/GaN material for preparing table top is carried out to photoetching, form the etched area of p-GaN and linear AlGaN layer, put into again ICP dry etching reative cell, by the p-GaN layer of Zone Full and grid, source electrode and compound drain electrode top between grid and source electrode and the step that linear AlGaN layer all etches away, process conditions in this step in ICP dry etching reative cell are: upper electrode power is 200W, lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 5min～8min;
(4) device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm, and peel off, finally in nitrogen environment, carry out 850 ℃, the rapid thermal annealing of 35s, the step of formation ohmic contact;
(5) device for preparing ohmic contact is carried out to photoetching, form the etched area of p-GaN layer, put into again ICP dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, form first area between grid and compound drain electrode and the step of second area simultaneously, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, second area is the region that only has linear AlGaN layer, process conditions in this step in ICP dry etching reative cell are: upper electrode power is 200W, lower electrode power is 20W, chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 3min～5min,
(6) device is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au=20/20nm and peel off, finally in atmospheric environment, carry out 550 ℃, the annealing of 10min, the step of formation base stage ohmic contact;
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, put into again ICP dry etching reative cell, AlGaN barrier layer is etched away to 5～10nm, and then remove etch residue, form the step of slot grid structure, process conditions in this step in ICP dry etching reative cell are: upper electrode power is 200W, lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, and by HCl:H
2in O=1:1 solution, process 30s, remove etch residue;
(8) device is carried out to photoetching, form gate metal and drain electrode field plate region, then put into electron beam evaporation platform deposit Ni/Au=20/200nm and peel off, complete step prepared by grid and drain electrode field plate;
(9) put into the step of PECVD reative cell deposit SiN passivating film to completing grid and the device prepared of drain electrode field plate, in this step, the process conditions of PECVD reative cell are: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1～2Pa, radio-frequency power is 40W, the SiN passivating film that deposit 200nm～300nm is thick;
(10) to device clean, photoetching development, the step that the SiN film that source electrode, grid and compound drain electrode are covered above etches away, the process conditions in this step in ICP dry etching reative cell are: upper electrode power is 200W, lower electrode power is 20W, chamber pressure is 1.5Pa, CF
4flow be 20sccm, the flow of argon gas is 10sccm, etch period is 10min;
(11) to device again clean, photoetching development, and put into the thick electrode that adds of electron beam evaporation platform deposit Ti/Au=20/200nm, complete the preparation of integral device.
Above-mentioned is enlightenment according to the present invention, and by above-mentioned description, relevant staff can, not departing from the scope of this invention technological thought, carry out various change and modification completely.The technical scope of this invention is not limited to the content on specification, must determine its technical scope according to claim scope.
Claims (11)
1. the groove grid high tension apparatus based on compound drain electrode, it is characterized in that, comprise successively substrate, GaN resilient coating, GaN channel layer, AlN separator, intrinsic AlGaN layer and AlGaN barrier layer from bottom to top, on described AlGaN barrier layer, be interval with source electrode, grid and compound drain electrode, between described grid and compound drain electrode, be also provided with linear AlGaN layer, linear AlGaN layer is provided with p-GaN layer, p-GaN layer is provided with base stage, the top layer of said structure also interval is deposited with passivation layer, in the interval of described passivation layer, is deposited with and adds thick electrode.
2. the groove grid high tension apparatus based on compound drain electrode according to claim 1, is characterized in that, described substrate is one or more in sapphire, carborundum, GaN and MgO.
3. the groove grid high tension apparatus based on compound drain electrode according to claim 1, is characterized in that, in described AlGaN barrier layer, the constituent content of Al is between 0～1, and the constituent content sum of the constituent content of Ga and Al is 1.
4. the groove grid high tension apparatus based on compound drain electrode according to claim 1, it is characterized in that, in described linear AlGaN layer, the component content of Al is between 0～1, and be increased to y from x linearity, the thickness of linear AlGaN layer is L, and wherein the Al constituent content at arbitrary thickness L1 place is (y-x) × L1/L.
5. the groove grid high tension apparatus based on compound drain electrode according to claim 1, is characterized in that, comprises SiN, Al in described passivation layer
2o
3and HFO
2in one or more.
6. the groove grid high tension apparatus based on compound drain electrode according to claim 1, is characterized in that, the p-GaN layer between described grid and compound drain electrode and the simultaneous peak width d of linear AlGaN layer
1>0, only has the peak width d of linear AlGaN layer
2>0.
7. the groove grid high tension apparatus based on compound drain electrode according to claim 1, is characterized in that, the width d of described compound drain electrode on linear AlGaN layer
4between 0～1 μ m.
8. according to the groove grid high tension apparatus based on compound drain electrode described in any one in claim 1 to 7, it is characterized in that, with AlGaN channel layer replacement GaN channel layer, in AlGaN channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN barrier layer.
9. the groove grid high tension apparatus based on compound drain electrode according to claim 8, is characterized in that, with InGaN layer replacement p-GaN layer.
10. a manufacture method for the groove grid high tension apparatus based on compound drain electrode, is characterized in that, comprising:
(1) the linear AlGaN/AlGaN/GaN material of epitaxially grown p-GaN/ is carried out to the step of organic washing;
(2) the AlGaN/GaN material cleaning up is carried out to photoetching and dry etching, be formed with the step of source region table top;
(3) the AlGaN/GaN material for preparing table top is carried out to photoetching, form the etched area of p-GaN and linear AlGaN layer, put into again ICP dry etching reative cell, by the p-GaN layer of Zone Full and grid, source electrode and compound drain electrode top between grid and source electrode and the step that linear AlGaN layer all etches away;
(4) device is carried out to photoetching, then put into electron beam evaporation platform deposit metal ohmic contact Ti/Al/Ni/Au, and peel off, finally in nitrogen environment, carry out 850 ℃, the rapid thermal annealing of 35s, the step of formation ohmic contact;
(5) device for preparing ohmic contact is carried out to photoetching, form the etched area of p-GaN layer, put into again ICP dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, form first area between grid and compound drain electrode and the step of second area simultaneously;
(6) device is carried out to photoetching, form base region, then put into electron beam evaporation platform deposit Ni/Au and peel off, finally in atmospheric environment, carry out 550 ℃, the annealing of 10min, the step of formation base stage ohmic contact;
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, then put into ICP dry etching reative cell, AlGaN barrier layer is etched away to 5～10nm, and then remove etch residue, form the step of slot grid structure;
(8) device is carried out to photoetching, form gate metal and drain electrode field plate region, then put into electron beam evaporation platform deposit Ni/Au and peel off, complete step prepared by grid and drain electrode field plate;
(9) put into the step of PECVD reative cell deposit SiN passivating film to completing grid and the device prepared of drain electrode field plate;
(10) to device clean, photoetching development, the step that the SiN film that source electrode, grid and compound drain electrode are covered above etches away;
(11) to device again clean, photoetching development, and put into electron beam evaporation platform deposit Ti/Au and add thick electrode, complete the preparation of integral device.
The manufacture method of the 11. groove grid high tension apparatus based on compound drain electrode according to claim 10, is characterized in that, in step (1), adopts mobile washed with de-ionized water and puts into HCl:H
2in the solution of O=1:1, corrode 30～60s, finally dry up by mobile washed with de-ionized water and with high pure nitrogen;
In step (3), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 5min～8min;
In step (5), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, etch period is 3min～5min; In this step, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, and second area is the region that only has linear AlGaN layer;
In step (7), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl
2flow be 10sccm, N
2flow be 10sccm, and by HCl:H
2in O=1:1 solution, process 30s, remove etch residue;
In step (9), the process conditions of PECVD reative cell are: SiH
4flow be 40sccm, NH
3flow be 10sccm, chamber pressure is 1～2Pa, radio-frequency power is 40W, the SiN passivating film that deposit 200nm～300nm is thick;
In step (10), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF
4flow be 20sccm, the flow of argon gas is 10sccm, etch period is 10min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037218B (en) * | 2014-07-02 | 2016-09-28 | 西安电子科技大学 | A kind of high-performance AlGaN/GaN HEMT high-voltage device structure based on polarity effect and manufacture method |
| CN104051521B (en) * | 2014-07-02 | 2017-03-22 | 西安电子科技大学 | High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1973163A2 (en) * | 2007-03-23 | 2008-09-24 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
| CN101312207A (en) * | 2007-05-21 | 2008-11-26 | 张乃千 | Enhancement type gallium nitride HEMT device structure |
| US20090072240A1 (en) * | 2007-09-14 | 2009-03-19 | Transphorm Inc. | III-Nitride Devices with Recessed Gates |
| US20130161638A1 (en) * | 2011-12-23 | 2013-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor structure with improved breakdown voltage performance |
-
2014
- 2014-01-22 CN CN201410033307.1A patent/CN103839996B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1973163A2 (en) * | 2007-03-23 | 2008-09-24 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
| CN101312207A (en) * | 2007-05-21 | 2008-11-26 | 张乃千 | Enhancement type gallium nitride HEMT device structure |
| US20090072240A1 (en) * | 2007-09-14 | 2009-03-19 | Transphorm Inc. | III-Nitride Devices with Recessed Gates |
| US20130161638A1 (en) * | 2011-12-23 | 2013-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor structure with improved breakdown voltage performance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037218B (en) * | 2014-07-02 | 2016-09-28 | 西安电子科技大学 | A kind of high-performance AlGaN/GaN HEMT high-voltage device structure based on polarity effect and manufacture method |
| CN104051521B (en) * | 2014-07-02 | 2017-03-22 | 西安电子科技大学 | High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof |
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