CN103839996B - Groove grid high tension apparatus based on compound drain electrode and preparation method thereof - Google Patents
Groove grid high tension apparatus based on compound drain electrode and preparation method thereof Download PDFInfo
- Publication number
- CN103839996B CN103839996B CN201410033307.1A CN201410033307A CN103839996B CN 103839996 B CN103839996 B CN 103839996B CN 201410033307 A CN201410033307 A CN 201410033307A CN 103839996 B CN103839996 B CN 103839996B
- Authority
- CN
- China
- Prior art keywords
- layer
- algan
- drain electrode
- gan
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 105
- 238000005036 potential barrier Methods 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 58
- 238000001259 photo etching Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 238000001312 dry etching Methods 0.000 claims description 22
- 239000000470 constituent Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910001868 water Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 16
- 230000009467 reduction Effects 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a kind of groove grid high tension apparatus based on compound drain electrode and preparation method thereof, include substrate, GaN cushion, GaN channel layer, AlN sealing coat, intrinsic AlGaN layer and AlGaN potential barrier the most successively, source electrode, grid and compound drain electrode it is interval with in described AlGaN potential barrier, it is additionally provided with linear AlGaN layer between described grid and compound drain electrode, linear AlGaN layer is provided with p GaN layer, P GaN layer is provided with base stage, the top layer of said structure is also spaced and is deposited with passivation layer, is deposited with and adds thick electrode in the interval of described passivation layer.The present invention conducting resistance when break-over of device is reduced, and the breakdown voltage when cut-off state is improved, takes into account the raising of device electric breakdown strength and the reduction of conducting resistance, used slot grid structure simultaneously, enhance the grid regulating and controlling effect to raceway groove 2DEG, improve the frequency performance of device.
Description
Technical field
The present invention relates to microelectronics technology, especially relate to a kind of groove grid high-voltage device based on compound drain electrode
Part and preparation method thereof.
Background technology
The 3rd bandwidth bandgap quasiconductor with SiC and GaN as representative is big with its energy gap in recent years, hit
The characteristic such as wear that electric field is high, thermal conductivity high, saturated electrons speed is big and heterojunction boundary two-dimensional electron gas is high,
Make it receive significant attention.In theory, the HEMT that these materials make is utilized
The devices such as HEMT, LED, laser diode LD have obvious superior spy than existing device
Property, the most both at home and abroad it was had made extensive and intensive studies by researcher, and achieved and make us
The achievement in research attracted attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) is at high-temperature device and HIGH-POWERED MICROWAVES device
Part aspect has had shown that advantageous advantage, pursuit device altofrequency, high pressure, high power have attracted crowd
Many research.In recent years, make higher frequency high pressure AlGaN/GaN HEMT and become the another research of concern
Focus.After having grown due to AlGaN/GaN hetero-junctions, heterojunction boundary exists for a large amount of two-dimensional electron gas
2DEG, and its mobility is the highest, and therefore we are obtained in that higher device frequency characteristic.Improving
AlGaN/GaN hetero-junctions electron mobility transistor breakdown voltage aspect, people have carried out substantial amounts of research,
Find that puncturing of AlGaN/GaN HEMT device occurs mainly in grid by drain terminal, hitting of device to be improved
Wear voltage, it is necessary to make the electric field redistribution in grid leak region, especially reduce the grid electric field by drain terminal, to this end,
The method that there has been proposed employing field plate structure:
1. use field plate structure, see Yuji Ando, Akio Wakejima, Yasuhiro Okamoto's etc.
Novel AlGaN/GaN dual-field-plate FET with high gain,increased linearity and
stability,IEDM 2005,pp.576-579,2005.Use grid in AlGaN/GaN HEMT device simultaneously
Field plate and source field plate structure, the breakdown voltage of device is double from individually using the 125V of grid field plate to bring up to employing
250V after field plate, and reduce gate leakage capacitance, improve the linearity and the stability of device.
2. use super-junction structures, see Akira Nakajima, Yasunobu Sumida, Mahesh H's
GaN based super heterojunction field effect transistors using the polarization junction
concept.Have 2DEG and 2DEH in this device architecture simultaneously, when grid forward bias, 2DEG
Concentration there is not any change, therefore the conducting resistance of device will not increase, when gate backbias,
2DEG in raceway groove can exhaust due to electric discharge, thus the breakdown voltage that improve device (improves from 110V
To 560V), and conducting resistance is 6.1m Ω cm2。
Summary of the invention
The present invention is in order to overcome above-mentioned deficiency, it is provided that a kind of increase having taken into account breakdown voltage and electric conduction
The reduction of resistance, and improve the groove grid high tension apparatus based on compound drain electrode of the frequency performance of device.
Technical scheme is as follows:
A kind of groove grid high tension apparatus based on compound drain electrode, include the most successively substrate, GaN cushion,
GaN channel layer, AlN sealing coat, intrinsic AlGaN layer and AlGaN potential barrier, described AlGaN potential barrier
It is interval with source electrode, grid and compound drain electrode on Ceng, is additionally provided with linear between described grid and compound drain electrode
AlGaN layer, linear AlGaN layer is provided with p-GaN layer, and p-GaN layer is provided with base stage, said structure
Top layer is also spaced and is deposited with passivation layer, is deposited with and adds thick electrode in the interval of described passivation layer.
Described substrate is one or more in sapphire, carborundum, GaN and MgO.
In described AlGaN potential barrier, the constituent content of Al is between 0～1, and the constituent content of Ga is with Al's
Constituent content sum is 1.
In described linear AlGaN layer, the component content of Al is between 0～1, and increases linearly to y from x,
The thickness of linear AlGaN layer is L, and the Al constituent content at any of which thickness L1 is (y-x) × L1/L.
SiN, Al is included in described passivation layer2O3And HFO2In one or more.
P-GaN layer between described grid and compound drain electrode and the simultaneous peak width of linear AlGaN layer
d1＞ 0, the peak width d of the most linear AlGaN layer2＞ 0.
Described compound drain electrode width d in linear AlGaN layer4Between 0～1 μm.
Wherein, GaN channel layer can replace with AlGaN channel layer, during with AlGaN channel layer, and AlGaN
In channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN potential barrier.P-GaN layer can be used
InGaN layer replaces, and when using InGaN layer, the constituent content of In is constant or In component is gradually increased.
Present invention groove based on compound drain electrode grid high tension apparatus, the AlGaN potential barrier between grid and drain electrode
The top linear AlGaN layer of extension, and extension has p-GaN above the subregion of linear AlGaN layer
Layer, and in p-GaN layer, preparation has electrode.By p-GaN epitaxial layer between grid and drain electrode with linear
The simultaneous region of AlGaN layer is referred to as first area, and the region of the most linear AlGaN layer is referred to as
Two regions.Such structure is so that device is when conducting state, i.e. during grid voltage >=0V, and the firstth district
Immediately below the increase of the AlGaN/GaN interface 2DEG concentration immediately below territory and second area
The increase of the 2DEG concentration of AlGaN/GaN interface is nearly identical, the 2DEG being all higher than in raceway groove
Density, therefore first area has reduced with the resistance of second area, and the conducting resistance of device have also been obtained
Reduce；2DEG when device is in cut-off state, i.e. during grid voltage≤threshold voltage, in grid lower channel
Depleted, meanwhile electrically connect with grid due to base electrode, therefore the 2DEG immediately below first area is dense
Degree has reduced, and is even reduced to 50% so that the depletion region of device has been widened, afforded high electric field
Region widened, device electric breakdown strength is improved；Additionally, the 2DEG immediately below second area is dense
Spend identical with during conducting state, the beneficially redistribution of electric field, and the use of the field plate that drains guarantees electricity
Field peak value does not appears at drain electrode, and device electric breakdown strength is improved again.Therefore this structure is led at device
Conducting resistance time logical is reduced, and the breakdown voltage when cut-off state is improved, and has taken into account device
The raising of breakdown voltage and the reduction of conducting resistance.Device uses slot grid structure simultaneously, enhances grid to ditch
The regulating and controlling effect of road 2DEG, improves the frequency performance of device.
The making step of above-mentioned groove grid high tension apparatus based on compound drain electrode is as follows:
(1) AlGaN/AlGaN/GaN material linear to epitaxially grown p-GaN/ carries out the step of organic washing
Suddenly；
(2) AlGaN/AlGaN/GaN material linear to the p-GaN/ cleaned up carries out photoetching and dry etching, shape
Become the step of active region mesa；
(3) AlGaN/AlGaN/GaN material linear to the p-GaN/ preparing table top carries out photoetching, forms p-GaN
With the etched area of linear AlGaN layer, place in ICP dry etching reative cell, by between grid and source electrode
P-GaN layer and linear AlGaN layer above Zone Full and grid, source electrode and compound drain electrode all etch
The step fallen；
(4) device is carried out photoetching, be then placed in electron beam evaporation platform depositing metal ohmic contact
Ti/Al/Ni/Au=20/120/45/50nm, and peel off, finally in nitrogen environment, carry out 850 DEG C, 35s
Rapid thermal annealing, formed Ohmic contact step；
(5) device preparing Ohmic contact is carried out photoetching, form the etched area of p-GaN layer, place into ICP
In dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, simultaneously
Form the first area between grid and compound drain electrode and the step of second area；
(6) device is carried out photoetching, form base region, be then placed in electron beam evaporation platform deposit
Ni/Au=20/20nm also peels off, and finally carries out 550 DEG C in atmospheric environment, the annealing of 10min,
Form the step of base ohmic contact；
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, place into ICP dry method and carve
In erosion reative cell, AlGaN potential barrier is etched away 5～10nm, removes etch residue the most again, formed
The step of slot grid structure；
(8) device is carried out photoetching, form gate metal and drain electrode field plate region, be then placed in electron beam evaporation
Platform deposits Ni/Au=20/200nm peeling off, completes grid and step prepared by drain electrode field plate；
(9) to completing grid and PECVD reative cell deposit SiN passivating film put into by the drain electrode device prepared of field plate
Step；
(10) device is carried out, photoetching development, by source electrode, grid and compound drain electrodes cover SiN
The step that thin film etches away；
(11) device is carried out again, photoetching development, and put in electron beam evaporation platform deposit
Ti/Au=20/200nm adds thick electrode, completes the preparation of integral device.
Wherein, in step (1), the deionized water of flowing is used to clean and put into HCl:H2O=1:1's is molten
Liquid carries out corroding 30～60s, finally cleans with the deionized water of flowing and dry up with high pure nitrogen；
In step (3), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W,
Lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be
10sccm, etch period is 5min～8min；
In step (5), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, under
Electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm,
Etch period is 3min～5min；In this step, first area be p-GaN layer and linear AlGaN layer with
Time exist region, second area is the region of the most linear AlGaN layer；
In step (7), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, under
Electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm,
And by HCl:H2O=1:1 solution processes 30s, removes etch residue；
In step (9), the process conditions of PECVD reative cell are: SiH4Flow be 40sccm, NH3Stream
Amount is 10sccm, and chamber pressure is 1～2Pa, and radio-frequency power is 40W, deposit 200nm～300nm thickness
SiN passivating film；
In step (10), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, under
Electrode power is 20W, and chamber pressure is 1.5Pa, CF4Flow be 20sccm, the flow of argon is
10sccm, etch period is 10min.
Beneficial effects of the present invention is as follows:
(1) present invention uses first area, second area between grid and drain electrode to be formed such that break-over of device
Time first area and second area 2DEG concentration increase, resistance is reduced, and reduces break-over of device
The purpose of resistance；
(2) present invention uses first area, second area between device grids and drain electrode to be formed such that device cuts
Time only, the 2DEG of first area is reduced, and the 2DEG of second area is identical with during break-over of device, increases
The width of device depletion region, changes Electric Field Distribution, reaches to improve the purpose of device electric breakdown strength；
(3) present invention uses compound drain electrode structure, and i.e. drain and drain field plate composite construction, prevents drain electrode
There is peak electric field in edge, improves the breakdown voltage of device；
(4) present invention uses slot grid structure, enhances the grid control action to raceway groove 2DEG, improves
The frequency performance of device.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the structural representation of groove grid high tension apparatus based on compound drain electrode in the present invention；
Fig. 2 is Making programme figure.
Detailed description of the invention
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification,
The basic structure of the present invention is described the most in a schematic way, and therefore it only shows the composition relevant with the present invention.
Groove grid high tension apparatus based on compound drain electrode as shown in Figure 1, includes substrate 1, GaN the most successively
Cushion 2, GaN channel layer 3, AlN sealing coat 4, intrinsic AlGaN layer 5 and AlGaN potential barrier 6, institute
Stating and be interval with source electrode 7, grid 8 and compound drain electrode 9 in AlGaN potential barrier 6, described grid 8 is with compound
Being additionally provided with linear AlGaN layer 10 between drain electrode 9, linear AlGaN layer 10 is provided with p-GaN layer 11, p-GaN
Layer 11 is provided with base stage 12, and the top layer of said structure is also spaced and is deposited with passivation layer 13, described passivation layer 13
Interval in be deposited with and add thick electrode 14.Wherein, described substrate 1 is sapphire, carborundum, GaN and MgO
In one or more.In described AlGaN potential barrier 6, the constituent content of Al is between 0～1, the group of Ga
Dividing content is 1 with the constituent content sum of Al.In described linear AlGaN layer, the component content of Al is 0～1
Between, and increasing linearly to y from x, the thickness of linear AlGaN layer is L, at any of which thickness L1
Al constituent content is (y-x) × L1/L.SiN, Al is included in described passivation layer 132O3And HFO2In one
Or it is multiple.Described grid 8 and the compound p-GaN layer 11 drained between 9 and linear AlGaN layer 10 are simultaneously
The peak width d existed1＞ 0, the peak width d of the most linear AlGaN layer 102＞ 0.Described compound drain electrode 9
Width d in linear AlGaN layer 104Between 0～1 μm.
In said structure, GaN channel layer 3 can replace with AlGaN channel layer, during with AlGaN channel layer,
In AlGaN channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN potential barrier 6.P-GaN layer
11 can replace by InGaN layer, when using InGaN layer, the constituent content of In is constant or In component gradually
Increase.
The linear AlGaN layer of extension above present invention AlGaN potential barrier between grid and drain electrode, and online
Property AlGaN layer subregion above extension have a p-GaN layer, and preparation has electrode in p-GaN layer.
P-GaN epitaxial layer and the simultaneous region of linear AlGaN layer between grid and drain electrode are referred to as the firstth district
Territory, the region of the most linear AlGaN layer is referred to as second area.Such structure is so that device is being led
During logical state, the AlGaN/GaN interface 2DEG concentration i.e. during grid voltage >=0V, immediately below first area
Increase and second area immediately below the increase almost phase completely of 2DEG concentration of AlGaN/GaN interface
With, the 2DEG density being all higher than in raceway groove, therefore first area has reduced with the resistance of second area,
The conducting resistance of device have also been obtained reduction；When device is in cut-off state, i.e. grid voltage≤threshold voltage
Time, the 2DEG in grid lower channel is depleted, meanwhile electrically connects with grid due to base electrode, and therefore first
2DEG concentration immediately below region has reduced, and is even reduced to 50% so that the depletion region of device has added
Width, the region of afforded high electric field widened, and device electric breakdown strength is improved；Additionally, the secondth district
2DEG concentration immediately below territory is identical with during conducting state, beneficially the redistribution of electric field, and drains
The use of field plate guarantees that peak electric field does not appears at drain electrode, and device electric breakdown strength is improved again.Cause
This this structure conducting resistance when break-over of device is reduced, and the breakdown voltage when cut-off state obtains
Improve, taken into account the raising of device electric breakdown strength and the reduction of conducting resistance.Device uses slot grid structure simultaneously,
Enhance the grid regulating and controlling effect to raceway groove 2DEG, improve the frequency performance of device.
As in figure 2 it is shown, the present invention making step as follows:
(1) AlGaN/AlGaN/GaN material linear to epitaxially grown p-GaN/ carries out the step of organic washing,
The deionized water using flowing in this step cleans and puts into HCl:H2The solution of O=1:1 is carried out corrode 30～
60s, finally cleans with the deionized water of flowing and dries up with high pure nitrogen；
(2) AlGaN/AlGaN/GaN material linear to the p-GaN/ cleaned up carries out photoetching and dry etching, shape
Become the step of active region mesa；
(3) AlGaN/AlGaN/GaN material linear to the p-GaN/ preparing table top carries out photoetching, forms p-GaN
With the etched area of linear AlGaN layer, place in ICP dry etching reative cell, by between grid and source electrode
P-GaN layer and linear AlGaN layer above Zone Full and grid, source electrode and compound drain electrode all etch
The step fallen, in this step, the process conditions in ICP dry etching reative cell are: upper electrode power is 200W,
Lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be
10sccm, etch period is 5min～8min；
(4) device is carried out photoetching, be then placed in electron beam evaporation platform depositing metal ohmic contact
Ti/Al/Ni/Au=20/120/45/50nm, and peel off, finally in nitrogen environment, carry out 850 DEG C,
The rapid thermal annealing of 35s, forms the step of Ohmic contact；
(5) device preparing Ohmic contact is carried out photoetching, form the etched area of p-GaN layer, place into ICP
In dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, simultaneously
Forming the first area between grid and compound drain electrode and the step of second area, first area is p-GaN layer
Region simultaneous with linear AlGaN layer, second area is the region of the most linear AlGaN layer, this step
In rapid, the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is
20W, chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period
For 3min～5min；
(6) device is carried out photoetching, form base region, be then placed in electron beam evaporation platform deposit
Ni/Au=20/20nm also peels off, and finally carries out 550 DEG C in atmospheric environment, the annealing of 10min, shape
Become the step of base ohmic contact；
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, place into ICP dry method and carve
In erosion reative cell, AlGaN potential barrier is etched away 5～10nm, remove etch residue the most again, form groove
The step of grid structure, in this step, the process conditions in ICP dry etching reative cell are: upper electrode power is
200W, lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow
For 10sccm, and by HCl:H2O=1:1 solution processes 30s, removes etch residue；
(8) device is carried out photoetching, form gate metal and drain electrode field plate region, be then placed in electron beam evaporation
Platform deposits Ni/Au=20/200nm peeling off, completes grid and step prepared by drain electrode field plate；
(9) to completing grid and the step of PECVD reative cell deposit SiN passivating film put into by the drain electrode device prepared of field plate
Suddenly, in this step, the process conditions of PECVD reative cell are: SiH4Flow be 40sccm, NH3Flow be
10sccm, chamber pressure is 1～2Pa, and radio-frequency power is 40W, the SiN that deposit 200nm～300nm is thick
Passivating film；
(10) device is carried out, photoetching development, by source electrode, grid and compound drain electrodes cover SiN
The step that thin film etches away, in this step, the process conditions in ICP dry etching reative cell are: upper electrode merit
Rate is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4Flow be 20sccm, argon
Flow be 10sccm, etch period is 10min；
(11) device is carried out again, photoetching development, and put in electron beam evaporation platform deposit
Ti/Au=20/200nm adds thick electrode, completes the preparation of integral device.
Above-mentioned is enlightenment according to the present invention, and by above-mentioned description, relevant staff completely can be not
In the range of deviation this invention technological thought, carry out various change and amendment.The technology of this invention
The content that property scope is not limited in description, it is necessary to determine that it is technical according to right
Scope.
Claims (10)
1. a groove grid high tension apparatus based on compound drain electrode, it is characterized in that, include substrate the most successively, GaN cushion, GaN channel layer, AlN sealing coat, intrinsic AlGaN layer and AlGaN potential barrier, it is interval with source electrode in described AlGaN potential barrier, grid and compound drain electrode, it is additionally provided with linear AlGaN layer between described grid and compound drain electrode, linear AlGaN layer is provided with p-GaN layer, p-GaN layer is provided with base stage, the top layer of said structure is also spaced and is deposited with passivation layer, it is deposited with in the interval of described passivation layer and adds thick electrode, p-GaN layer between described grid and compound drain electrode and linear AlGaN layer simultaneous peak width d1＞ 0, the peak width d of the most linear AlGaN layer2＞ 0.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 1, it is characterised in that institute
Stating substrate is one or more in sapphire, carborundum, GaN and MgO.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 1, it is characterised in that in described AlGaN potential barrier, the constituent content of Al is between 0～1, the constituent content of Ga is 1 with the constituent content sum of Al.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 1, it is characterized in that, in described linear AlGaN layer, the component content of Al is between 0～1, and increase linearly to y from x, the thickness of linear AlGaN layer is L, and the Al constituent content at any of which thickness L1 is (y-x) × L1/L.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 1, it is characterised in that include SiN, Al in described passivation layer2O3And HfO2In one or more.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 1, it is characterised in that described compound drain electrode width d in linear AlGaN layer4Between 0～1 μm.
Groove grid high tension apparatus based on compound drain electrode the most according to any one of claim 1 to 6, it is characterised in that replace GaN channel layer with AlGaN channel layer, in AlGaN channel layer, the constituent content of Al is less than the constituent content of Al in AlGaN potential barrier.
Groove grid high tension apparatus based on compound drain electrode the most according to claim 7, it is characterised in that replace p-GaN layer by InGaN layer.
9. the manufacture method of a groove grid high tension apparatus based on compound drain electrode, it is characterised in that including:
(1) AlGaN/AlGaN/GaN material linear to epitaxially grown p-GaN/ carries out the step of organic washing；
(2) AlGaN/AlGaN/GaN material linear to the p-GaN/ cleaned up carries out photoetching and dry etching, is formed with the step of region meas；
(3) AlGaN/AlGaN/GaN material linear to the p-GaN/ preparing table top carries out photoetching, form p-GaN and the etched area of linear AlGaN layer, place in ICP dry etching reative cell, the step that the p-GaN layer above Zone Full between grid and source electrode and grid, source electrode and compound drain electrode and linear AlGaN layer are all etched away；P-GaN layer between described grid and compound drain electrode and linear AlGaN layer simultaneous peak width d1＞ 0, the peak width d of the most linear AlGaN layer2＞ 0；
(4) device is carried out photoetching, be then placed in electron beam evaporation platform depositing metal ohmic contact Ti/Al/Ni/Au, and peel off, finally in nitrogen environment, carry out 850 DEG C, the rapid thermal annealing of 35s, form the step of Ohmic contact；
(5) device preparing Ohmic contact is carried out photoetching, form the etched area of p-GaN layer, place in ICP dry etching reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, concurrently forms the first area between grid and compound drain electrode and the step of second area；
(6) device is carried out photoetching, form base region, be then placed in electron beam evaporation platform depositing Ni/Au and peeling off, finally in atmospheric environment, carry out 550 DEG C, the annealing of 10min, form the step of base ohmic contact；
(7) carry out photoetching to completing device prepared by base stage, form grid etch region, place in ICP dry etching reative cell, AlGaN potential barrier is etched away 5～10nm, remove etch residue the most again, form the step of slot grid structure；
(8) device is carried out photoetching, form gate metal and drain electrode field plate region, be then placed in electron beam evaporation platform depositing Ni/Au peeling off, complete grid and step prepared by drain electrode field plate；
(9) to completing grid and the step of PECVD reative cell deposit SiN passivating film put into by the drain electrode device prepared of field plate；
(10) device is carried out, photoetching development, the step that etches away of SiN thin film that source electrode, grid and compound drain electrodes are covered；
(11) device is carried out again, photoetching development, and put in electron beam evaporation platform deposit Ti/Au add thick electrode, complete the preparation of integral device.
The manufacture method of groove grid high tension apparatus based on compound drain electrode the most according to claim 9, it is characterised in that in step (1), uses the deionized water of flowing clean and put into HCl:H2The solution of O=1:1 carries out corroding 30～60s, finally cleans with the deionized water of flowing and dry up with high pure nitrogen；
In step (3), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period is 5min～8min；
In step (5), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period is 3min～5min；In this step, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, and second area is the region of the most linear AlGaN layer；
In step (7), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, and by HCl:H2O=1:1 solution processes 30s, removes etch residue；
In step (9), the process conditions of PECVD reative cell are: SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure is 1～2Pa, and radio-frequency power is 40W, the SiN passivating film that deposit 200nm～300nm is thick；
In step (10), the process conditions in ICP dry etching reative cell are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4Flow be 20sccm, the flow of argon is 10sccm, and etch period is 10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033307.1A CN103839996B (en) | 2014-01-22 | 2014-01-22 | Groove grid high tension apparatus based on compound drain electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410033307.1A CN103839996B (en) | 2014-01-22 | 2014-01-22 | Groove grid high tension apparatus based on compound drain electrode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103839996A CN103839996A (en) | 2014-06-04 |
| CN103839996B true CN103839996B (en) | 2016-08-17 |
Family
ID=50803315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410033307.1A Active CN103839996B (en) | 2014-01-22 | 2014-01-22 | Groove grid high tension apparatus based on compound drain electrode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103839996B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051521B (en) * | 2014-07-02 | 2017-03-22 | 西安电子科技大学 | High-performance AlGaN/GaN HEMT switching device structure based on organic medium and manufacturing method thereof |
| CN104037218B (en) * | 2014-07-02 | 2016-09-28 | 西安电子科技大学 | A kind of high-performance AlGaN/GaN HEMT high-voltage device structure based on polarity effect and manufacture method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1973163A2 (en) * | 2007-03-23 | 2008-09-24 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
| CN101312207A (en) * | 2007-05-21 | 2008-11-26 | 张乃千 | Enhancement type gallium nitride HEMT device structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7795642B2 (en) * | 2007-09-14 | 2010-09-14 | Transphorm, Inc. | III-nitride devices with recessed gates |
| US8680535B2 (en) * | 2011-12-23 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor structure with improved breakdown voltage performance |
-
2014
- 2014-01-22 CN CN201410033307.1A patent/CN103839996B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1973163A2 (en) * | 2007-03-23 | 2008-09-24 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
| CN101312207A (en) * | 2007-05-21 | 2008-11-26 | 张乃千 | Enhancement type gallium nitride HEMT device structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103839996A (en) | 2014-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104037218B (en) | A kind of high-performance AlGaN/GaN HEMT high-voltage device structure based on polarity effect and manufacture method | |
| CN104037221B (en) | Compound field plate high-performance AlGaN/GaN HEMT element structure based on polarization effect and manufacturing method | |
| CN105355659A (en) | Trench-gate AlGaN/GaN HEMT device structure and manufacturing method | |
| CN103904114B (en) | Add source field plate enhanced AlGaN/GaN HEMT device architecture and preparation method thereof | |
| CN103904111B (en) | Based on enhanced AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN104064595B (en) | A kind of enhanced AlGaN based on slot grid structure/GaN MISHEMT device architecture and preparation method thereof | |
| CN103745990B (en) | Depletion-mode AlGaN/GaN MISHEMT high tension apparatus and preparation method thereof | |
| CN103839996B (en) | Groove grid high tension apparatus based on compound drain electrode and preparation method thereof | |
| CN103794643B (en) | A kind of based on groove grid high tension apparatus and preparation method thereof | |
| CN103745992B (en) | AlGaN/GaN MISHEMT high tension apparatus based on compound drain electrode and preparation method thereof | |
| CN104037217B (en) | AlGaN/GaN HEMT switching element structure based on composite dipole layer and manufacturing method | |
| CN103762234B (en) | Based on the AlGaN/GaN MISHEMT high tension apparatus and preparation method thereof of super junction leakage field plate | |
| CN103779411B (en) | High voltage device based on super junction groove gates and manufacturing method of high voltage device | |
| CN104037222B (en) | High-voltage trench gate AlGaN/GaN HEMT device structure based on organic polymer polarization effect and manufacturing method of high-voltage trench gate AlGaN/GaN HEMT device structure based on organic polymer polarization effect | |
| CN103904112B (en) | Depletion type insulated gate AlGaN/GaN device architecture and preparation method thereof | |
| CN103996707B (en) | Add grid field plate enhanced AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN103779410B (en) | Groove grid high tension apparatus based on super junction leakage field plate and preparation method thereof | |
| CN103779409B (en) | Depletion-type AlGaN/GaN HEMT structure and manufacturing method thereof | |
| CN104037216B (en) | A kind of high pressure AlGaN/GaN MISHEMT device architecture based on dipole layer and preparation method thereof | |
| CN103779412B (en) | A kind of based on depletion type high tension apparatus and preparation method thereof | |
| CN103779408B (en) | Based on depletion type groove grid AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN103762235B (en) | AlGaN/GaN high tension apparatus based on super junction leakage field plate and preparation method thereof | |
| CN103745993B (en) | Based on the AlGaN/GaN MISHEMT high tension apparatus and preparation method thereof of superjunction | |
| CN103779417B (en) | A kind of high tension apparatus based on compound drain electrode and preparation method thereof | |
| CN103745991B (en) | AlGaN/GaN high tension apparatus based on super knot and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170719 Address after: 650221 Yunnan city of Kunming province Dabanqiao Street office office building No. 7 room 7-114 Patentee after: Yunnan Hui Hui Electronic Technology Co., Ltd. Address before: Xi'an City, Shaanxi province Taibai Road 710071 No. 2 Patentee before: Xidian University |