CN103779417B - A kind of high tension apparatus based on compound drain electrode and preparation method thereof - Google Patents
A kind of high tension apparatus based on compound drain electrode and preparation method thereof Download PDFInfo
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- CN103779417B CN103779417B CN201410029823.7A CN201410029823A CN103779417B CN 103779417 B CN103779417 B CN 103779417B CN 201410029823 A CN201410029823 A CN 201410029823A CN 103779417 B CN103779417 B CN 103779417B
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 114
- 238000005036 potential barrier Methods 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims description 24
- 239000000470 constituent Substances 0.000 claims description 23
- 238000001312 dry etching Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
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- 238000004140 cleaning Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
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- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 3
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- 230000015556 catabolic process Effects 0.000 abstract description 17
- 230000008719 thickening Effects 0.000 abstract description 4
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a kind of high tension apparatus based on compound drain electrode and preparation method thereof, include substrate, GaN cushions, GaN channel layers, AlN separation layers, intrinsic AlGaN layer and AlGaN potential barrier from bottom to top successively, source electrode, grid and compound drain electrode are interval with the AlGaN potential barrier, linear AlGaN layer is additionally provided between the grid and compound drain electrode, linear AlGaN layer is provided with p GaN layers, P GaN layers are provided with base stage, the top layer of said structure is also spaced and is deposited with passivation layer, and thickening electrode is deposited with the interval of the passivation layer.Conducting resistance of the present invention in break-over of device is reduced, and the breakdown voltage in cut-off state is improved, and has taken into account the raising of device electric breakdown strength and the reduction of conducting resistance.
Description
Technical field
The present invention relates to microelectronics technology, more particularly, to a kind of high tension apparatus based on compound drain electrode and its making
Method.
Background technology
The 3rd bandwidth forbidden band gap semiconductor with SiC and GaN as representative is so that its energy gap is big, breakdown electric field in recent years
High, thermal conductivity is high, saturated electrons speed is big and the characteristic such as heterojunction boundary two-dimensional electron gas height so as to extensively closed
Note.In theory, using the high electron mobility transistor (HEMT) of these materials making, LED, laser diode
The devices such as LD have an obvious advantageous characteristic than existing device, thus in the last few years domestic and international researcher which has been carried out extensively and
In-depth study, and achieve the achievement in research for attracting people's attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) in terms of high-temperature device and HIGH-POWERED MICROWAVES device
Advantageous advantage is shown, device high-frequency, high pressure, high power is pursued and has been attracted numerous researchs.In recent years, make
Higher frequency high pressure AlGaN/GaN HEMT become the another study hotspot of concern.As the growth of AlGaN/GaN hetero-junctions is completed
Afterwards, heterojunction boundary there is a large amount of two-dimensional electron gas 2DEG, and its mobility is very high, thus we be obtained in that it is higher
Device frequency characteristic.In terms of AlGaN/GaN hetero-junctions electron mobility transistor breakdown voltages are improved, people have been carried out in a large number
Research, it is found that puncturing for AlGaN/GaN HEMT devices occurs mainly in grid by drain terminal, therefore the breakdown potential of device improved
Pressure, it is necessary to make the electric field redistribution in grid leak region, especially reduces electric field of the grid by drain terminal, for this purpose, there has been proposed adopting
The method of field plate structure：
1. field plate structure is adopted.Referring to the Novel of Yuji Ando, Akio Wakejima, Yasuhiro Okamoto etc.
AlGaN/GaN dual-field-plate FET with high gain,increased linearity and
stability,IEDM2005,pp.576-579,2005.Adopt grid field plate and Yuan Chang in AlGaN/GaN HEMT devices simultaneously
Hardened structure, the breakdown voltage of device is brought up to using the 250V after double field plates from the independent 125V using grid field plate, and is dropped
Low gate leakage capacitance, improves the linearity and stability of device
2. super-junction structures are adopted.Referring to Akira Nakajima, Yasunobu Sumida, the GaN of Mahesh H
based super heterojunction field effect transistors using the polarization
junction concept.Possess 2DEG and 2DEH simultaneously in the device architecture, when grid forward bias, the concentration of 2DEG
There is no any change, therefore the conducting resistance of device will not increase, when gate backbias, the 2DEG in raceway groove can be due to
Discharge and exhaust, so as to improve the breakdown voltage of device（Improve to 560V from 110V）, and conducting resistance is 6.1m Ω
cm2.
The content of the invention
The present invention is above-mentioned in order to overcome the shortcomings of, there is provided a kind of increase for having taken into account breakdown voltage and conducting resistance subtract
It is little, and improve a kind of high tension apparatus based on compound drain electrode of the frequency performance of device.
Technical scheme is as follows：
A kind of high tension apparatus based on compound drain electrode, from bottom to top successively include substrate, GaN cushions, GaN channel layers,
AlN separation layers, intrinsic AlGaN layer and AlGaN potential barrier, are interval with source electrode, grid and compound leakage in the AlGaN potential barrier
Pole, is additionally provided with linear AlGaN layer between the grid and compound drain electrode, and linear AlGaN layer is provided with p-GaN layer, in p-GaN layer
Base stage is provided with, the top layer of said structure is also spaced and is deposited with passivation layer, and thickening electrode is deposited with the interval of the passivation layer.
The substrate is one or more in sapphire, carborundum, GaN and MgO.
In the AlGaN potential barrier, the constituent content of Al is between 0～1, the constituent content of Ga and the constituent content of Al it
With for 1.
In the linear AlGaN layer, the component content of Al is between 0～1, and increases linearly to y, linear AlGaN layer from x
Thickness be L, Al constituent contents any of which thickness L1 at be (y-x) × L1/L.
Include SiN, Al in the passivation layer2O3And HFO2In one or more.
P-GaN layer and the simultaneous peak width d of linear AlGaN layer between the grid and compound drain electrode1>0, only
The peak width d of linear AlGaN layer2>0。
Width d of the compound drain electrode in linear AlGaN layer4Between 0～1 μm.
Wherein, GaN channel layers can be replaced with AlGaN channel layers, during with AlGaN channel layers, Al in AlGaN channel layers
Constituent content of the constituent content less than Al in AlGaN potential barrier.P-GaN layer can be replaced with InGaN layer, when using InGaN layer, In
Constituent content it is constant or In components gradually increase.
A kind of high tension apparatus based on compound drain electrode of the present invention, it is outer above the AlGaN potential barrier between grid and drain electrode
Prolong linear AlGaN layer, and extension has p-GaN layer above the subregion of linear AlGaN layer, and make in p-GaN layer
Have electrode.P-GaN epitaxial layers between grid and drain electrode and the simultaneous region of linear AlGaN layer are referred to as into the firstth area
Domain, the region of only linear AlGaN layer are referred to as second area.In conducting state, i.e., such structure can cause device
During gate electrode voltage >=0V, the increase of the AlGaN/GaN interfaces 2DEG concentration immediately below first area and second area just under
The increase of the 2DEG concentration of the AlGaN/GaN interfaces of side is nearly identical, the 2DEG density being all higher than in raceway groove, therefore the
One region has been reduced with the resistance of second area, and the conducting resistance of device is also reduced；When device is in cut-off shape
During state, i.e., gate electrode voltage≤threshold voltage when, the 2DEG in grid lower channel is depleted, at the same time due to base electrode and grid electricity
Pole electrically connects, therefore the 2DEG concentration immediately below first area has reduced, or even is reduced to 50% so that the depletion region of device
Widen, the region of afforded high electric field is widened, and device electric breakdown strength is improved；Additionally, second area just under
The 2DEG concentration of side is identical with during conducting state, is conducive to the redistribution of electric field, and the use of the field plate that drains guarantees electricity
Field peak value is not appeared at drain electrode, and device electric breakdown strength is improved again.Therefore conducting of the structure in break-over of device
Resistance is reduced, and the breakdown voltage in cut-off state is improved, and has taken into account the raising and conducting of device electric breakdown strength
The reduction of resistance.
A kind of making step of above-mentioned high tension apparatus based on compound drain electrode is as follows：
（1）The step of AlGaN/AlGaN/GaN materials linear to epitaxially grown p-GaN/ carry out organic washing；
（2）The step of AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, formation active region mesa；
（3）AlGaN/GaN materials to preparing table top carry out photoetching, form the etching of p-GaN and linear AlGaN layer
Area, places in ICP dry etching reative cells, by Zone Full between grid and source electrode and grid, source electrode and compound drain electrode
The step of p-GaN layer and linear AlGaN layer of top is etched away；
（4）Photoetching is carried out to device, in being then placed in electron beam evaporation platform, metal ohmic contact Ti/Al/Ni/Au is deposited,
And peeled off, finally carry out 850 DEG C in nitrogen environment, the rapid thermal annealing of 35s, formed Ohmic contact the step of；
（5）Device to preparing Ohmic contact carries out photoetching, forms the etched area of p-GaN layer, places into ICP dry method quarter
In erosion reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, while forming grid and compound drain electrode
Between first area and the step of second area；
（6）Photoetching is carried out to device, base region is formed, Ni/Au is deposited in being then placed in electron beam evaporation platform and is carried out
Peel off, finally carry out 550 DEG C in atmospheric environment, the annealing of 10min, formed base ohmic contact the step of；
（7）Device to completing base stage preparation carries out photoetching, forms gate metal and drain electrode field plate region, is then placed in
Deposit in electron beam evaporation platform and Ni/Au peeled off, complete gate electrode and the step of drain electrode field plate is prepared；
（8）The device prepared to completing gate electrode and drain electrode field plate is put into the step that PECVD reative cells deposit SiN passivating films
Suddenly；
（9）Device is carried out cleaning, photoetching development, be put in ICP dry etching reative cells, by source electrode, grid and compound
The step of SiN films that drain electrodes are covered are etched away；
（10）Device is carried out cleaning again, photoetching development, and deposit Ti/Au in being put into electron beam evaporation platform and thicken electricity
Pole, completes the preparation of integral device.
Wherein, step（1）In, clean and be put into HCl using the deionized water of flowing:H2O=1:Corruption is carried out in 1 solution
30～60s of erosion, is finally cleaned and is dried up with high pure nitrogen with the deionized water of flowing；
Step（3）In, the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, bottom electrode work(
Rate is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period be 5min～
8min；
Step（5）In, the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, lower electrode power
For 20W, chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period be 3min～
5min；In the step, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, and second area is only linear
The region of AlGaN layer；
Step（8）In, the process conditions of PECVD reative cells are：SiH4Flow be 40sccm, NH3Flow be
10sccm, chamber pressure are 1～2Pa, and radio-frequency power is 40W, deposit the thick SiN passivating films of 200nm～300nm；
Step（9）In, the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, lower electrode power
For 20W, chamber pressure is 1.5Pa, CF4Flow be 20sccm, the flow of argon gas is 10sccm, and etch period is 10min.
Beneficial effects of the present invention are as follows：
1. the present invention using first area when first area, second area are formed such that break-over of device between device gate-drain and
The 2DEG concentration of second area increases, and resistance is reduced, and reduces the purpose of device on-resistance；
2. the present invention is using first area when first area, second area are formed such that device cut-off between device gate-drain
2DEG is reduced, and the 2DEG of second area is identical with during break-over of device, increased the width of device depletion region, changes electric field
Distribution, reaches the purpose for improving device electric breakdown strength；
3. the present invention is using compound drain electrode structure（Drain and drain field plate）, prevent drain edge from electric field peak occur
Value, improves the breakdown voltage of device.
Description of the drawings
Fig. 1 is a kind of structural representation of the high tension apparatus based on compound drain electrode in the present invention；
Fig. 2 is the Making programme figure of the present invention.
Specific embodiment
In order that objects and advantages of the present invention become more apparent, the present invention is carried out below in conjunction with drawings and Examples
Further describe.It should be appreciated that specific embodiment described herein is not used to limit only to explain the present invention
The present invention.
A kind of high tension apparatus based on compound drain electrode as shown in Figure 1, include substrate 1, GaN cushions from bottom to top successively
2nd, GaN channel layers 3, AlN separation layers 4, intrinsic AlGaN layer 5 and AlGaN potential barrier 6, are interval with the AlGaN potential barrier 6
Source electrode 7, grid 8 and compound drain electrode 9, are additionally provided with linear AlGaN layer 10, linear AlGaN between the grid 8 and compound drain electrode 9
Layer 10 is provided with p-GaN layer 11, and p-GaN layer 11 is provided with base stage 12, and the top layer of said structure is also spaced and is deposited with passivation layer 13,
Thickening electrode 14 is deposited with the interval of the passivation layer 13.Wherein, during the substrate 1 is sapphire, carborundum, GaN and MgO
One or more.In the AlGaN potential barrier 6, the constituent content of Al is between 0～1, the constituent content of Ga and the component of Al
Content sum is 1.In the linear AlGaN layer, the component content of Al is between 0～1, and increases linearly to y from x, linearly
The thickness of AlGaN layer is L, and the Al constituent contents at any of which thickness L1 are (y-x) × L1/L.Include in the passivation layer 13
SiN、Al2O3And HFO2In one or more.P-GaN layer 11 and linear AlGaN layer between the grid 8 and compound drain electrode 9
10 simultaneous peak width d1>0, the only peak width d of linear AlGaN layer 102>0.The compound drain electrode 9 is linear
Width d in AlGaN layer 104Between 0～1 μm.
In said structure, GaN channel layers 3 can be replaced with AlGaN channel layers, during with AlGaN channel layers, AlGaN raceway grooves
Constituent content of the constituent content of Al less than Al in AlGaN potential barrier 6 in layer.P-GaN layer 11 can be replaced with InGaN layer, use
During InGaN layer, the constituent content of In is constant or In components gradually increase.
The linear AlGaN layer of extension above AlGaN potential barrier of the present invention between grid and drain electrode, and linear
Above the subregion of AlGaN layer, extension has p-GaN layer, and preparation has electrode in p-GaN layer.By between grid and drain electrode
P-GaN epitaxial layers and the simultaneous region of linear AlGaN layer are referred to as first area, and the region of only linear AlGaN layer claims
Be second area.Such structure can cause device in conducting state, i.e., during gate electrode voltage >=0V, first area is just
The 2DEG of the AlGaN/GaN interfaces immediately below increase and the second area of the AlGaN/GaN interfaces 2DEG concentration of lower section is dense
The increase of degree is nearly identical, the 2DEG density being all higher than in raceway groove, therefore first area is had with the resistance of second area
Reduced, the conducting resistance of device is also reduced；When device is in cut-off state, i.e. gate electrode voltage≤threshold voltage
When, the 2DEG in grid lower channel is depleted, at the same time as base electrode is electrically connected with gate electrode, therefore immediately below first area
2DEG concentration reduced, or even be reduced to 50% so that the depletion region of device has been widened, the area of afforded high electric field
Domain is widened, and device electric breakdown strength is improved；Additionally, the 2DEG concentration immediately below second area is complete with during conducting state
It is identical, be conducive to the redistribution of electric field, and the use of the field plate that drains guarantees that peak electric field is not appeared at drain electrode, device hits
Wear voltage to be improved again.Therefore conducting resistance of the structure in break-over of device is reduced, and in cut-off state
Breakdown voltage is improved, and has taken into account the raising of device electric breakdown strength and the reduction of conducting resistance.Device is tied using groove grid simultaneously
Structure, enhances regulating and controlling effect of the grid to raceway groove 2DEG, improves the frequency performance of device.
As shown in Fig. 2 the making step of the present invention is as follows：
（1）The step of AlGaN/AlGaN/GaN materials linear to epitaxially grown p-GaN/ carry out organic washing, the step
The middle deionized water using flowing is cleaned and is put into HCl:H2O=1:30～60s of corrosion is carried out in 1 solution, finally with flowing
Deionized water is cleaned and is dried up with high pure nitrogen；
（2）The step of AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, formation active region mesa；
（3）AlGaN/GaN materials to preparing table top carry out photoetching, form the etching of p-GaN and linear AlGaN layer
Area, places in ICP dry etching reative cells, by Zone Full between grid and source electrode and grid, source electrode and compound drain electrode
The step of p-GaN layer and linear AlGaN layer of top is etched away, the work in the step in ICP dry etching reative cells
Skill condition is：Upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be
10sccm,N2Flow be 10sccm, etch period be 5min～8min；
（4）Photoetching is carried out to device, in being then placed in electron beam evaporation platform, metal ohmic contact Ti/Al/Ni/Au=is deposited
20/120/45/50nm, and peeled off, finally 850 DEG C are carried out in nitrogen environment, the rapid thermal annealing of 35s forms ohm
The step of contact；
（5）Device to preparing Ohmic contact carries out photoetching, forms the etched area of p-GaN layer, places into ICP dry method quarter
In erosion reative cell, the p-GaN layer of subregion between grid and compound drain electrode is etched away, while forming grid and compound drain electrode
Between first area and the step of second area, first area is p-GaN layer and the simultaneous region of linear AlGaN layer,
Second area is the region of only linear AlGaN layer, and the process conditions in the step in ICP dry etchings reative cell are：Upper electricity
Pole power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be
10sccm, etch period are 3min～5min；
（6）Photoetching is carried out to device, base region is formed, in being then placed in electron beam evaporation platform, is deposited Ni/Au=20/
20nm is simultaneously peeled off, and finally carries out 550 DEG C in atmospheric environment, the annealing of 10min, formed base ohmic contact the step of；
（7）Device to completing base stage preparation carries out photoetching, forms gate metal and drain electrode field plate region, is then placed in
Deposit in electron beam evaporation platform and Ni/Au=20/200nm peeled off, complete gate electrode and the step of drain electrode field plate is prepared；
（8）The device prepared to completing gate electrode and drain electrode field plate is put into the step that PECVD reative cells deposit SiN passivating films
Suddenly, in the step, the process conditions of PECVD reative cells are：SiH4Flow be 40sccm, NH3Flow be 10sccm, reative cell
Pressure is 1～2Pa, and radio-frequency power is 40W, deposits the thick SiN passivating films of 200nm～300nm；
（9）Device is carried out cleaning, photoetching development, the SiN films etching that source electrode, grid and compound drain electrodes are covered
The step of falling, the process conditions in the step in ICP dry etchings reative cell are：Upper electrode power is 200W, lower electrode power
For 20W, chamber pressure is 1.5Pa, and the flow of CF4 is 20sccm, and the flow of argon gas is 10sccm, and etch period is 10min；
（10）Device is carried out cleaning again, photoetching development, and deposit Ti/Au=20/ in being put into electron beam evaporation platform
The thickening electrode of 200nm, completes the preparation of integral device.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of high tension apparatus based on compound drain electrode, it is characterised in that include successively from bottom to top substrate, GaN cushions,
GaN channel layers, AlN separation layers, intrinsic AlGaN layer and AlGaN potential barrier, are interval with source electrode, grid in the AlGaN potential barrier
Pole and compound drain electrode, are additionally provided with the linear AlGaN layer that thickness is L between the grid and compound drain electrode, its Al component is with line
The increase of property AlGaN layer thickness increases linearly to the Al component maximums of linear AlGaN layer from Al components x in barrier layer AlGaN
Y, i.e., from AlGaN potential barrier with the Al constituent contents at the interface of linear AlGaN layer to the arbitrary thickness L1 of linear AlGaN layer be
(y-x) × L1/L, the Al constituent contents in the linear AlGaN layer are that linear AlGaN layer is provided with p-GaN layer between 0～1,
P-GaN layer is provided with base stage, and the top layer of said structure is also spaced and is deposited with passivation layer, is deposited with and adds in the interval of the passivation layer
Thick electrode, the p-GaN layer and the simultaneous peak width d of linear AlGaN layer between the grid and compound drain electrode1＞ 0, only
The peak width d of linear AlGaN layer2＞ 0.
2. a kind of high tension apparatus based on compound drain electrode according to claim 1, it is characterised in that the substrate is blue precious
One or more in stone, carborundum, GaN and MgO.
3. a kind of high tension apparatus based on compound drain electrode according to claim 1, it is characterised in that the AlGaN potential barriers
In layer, between 0～1, the constituent content of Ga is 1 with the constituent content sum of Al to the constituent content of Al.
4. a kind of high tension apparatus based on compound drain electrode according to claim 1, it is characterised in that bag in the passivation layer
Include SiN, Al2O3And HFO2In one or more.
5. a kind of high tension apparatus based on compound drain electrode according to claim 1, it is characterised in that the compound drain electrode exists
Width d in linear AlGaN layer4Between 0～1 μm.
6. a kind of high tension apparatus based on compound drain electrode according to any one of claim 1 to 5, it is characterised in that use
AlGaN channel layers replace GaN channel layers, and in AlGaN channel layers, the constituent content of Al contains less than the component of Al in AlGaN potential barrier
Amount.
7. a kind of high tension apparatus based on compound drain electrode according to claim 6, it is characterised in that replaced with InGaN layer
P-GaN layer.
8. a kind of preparation method of the high tension apparatus based on compound drain electrode, it is characterised in that include：
(1) the step of AlGaN/AlGaN/GaN materials linear to epitaxially grown p-GaN/ carry out organic washing, wherein linearly
AlGaN layer is Al components as the increase of linear AlGaN layer thickness is increased linearly to linearly from Al components x in barrier layer AlGaN
Al component maximums y of AlGaN layer, i.e., it is arbitrary to linear AlGaN layer with the interface of linear AlGaN layer from AlGaN potential barrier
Al constituent contents at thickness L1 are (y-x) × L1/L, and the Al constituent contents in linear AlGaN layer are between 0～1；
(2) the step of AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, formation active region mesa；
(3) the AlGaN/GaN materials to preparing table top carry out photoetching, form the etched area of p-GaN and linear AlGaN layer, then
It is put in ICP dry etching reative cells, by Zone Full between grid and source electrode and grid, source electrode and compound drain electrode top
The step of p-GaN layer and linear AlGaN layer are etched away；
(4) photoetching is carried out to device, metal ohmic contact Ti/Al/Ni/Au is deposited in being then placed in electron beam evaporation platform, gone forward side by side
Row peel off, finally carry out 850 DEG C in nitrogen environment, the rapid thermal annealing of 35s, formed Ohmic contact the step of；
(5) device to preparing Ohmic contact carries out photoetching, forms the etched area of p-GaN layer, places into ICP dry etchings anti-
In answering room, the p-GaN layer of subregion between grid and compound drain electrode is etched away, while being formed between grid and compound drain electrode
First area and the step of second area；
(6) photoetching is carried out to device, base region is formed, Ni/Au is deposited in being then placed in electron beam evaporation platform and is peeled off,
550 DEG C are carried out in atmospheric environment finally, the annealing of 10min, formed base ohmic contact the step of；
(7) device to completing base stage preparation carries out photoetching, forms gate metal and drain electrode field plate region, is then placed in electronics
Deposit in beam evaporation platform and Ni/Au peeled off, complete gate electrode and the step of drain electrode field plate is prepared；
(8) the step of device prepared to completing gate electrode and drain electrode field plate is put into PECVD reative cells deposit SiN passivating films；
(9) device is carried out cleaning, photoetching development, be put in ICP dry etching reative cells, by source electrode, grid and compound drain electrode
The step of SiN films for covering above are etched away；
(10) device is carried out cleaning again, photoetching development, and Ti/Au deposited in being put into electron beam evaporation platform thicken electrode, it is complete
The preparation of integral device.
9. the preparation method of a kind of high tension apparatus based on compound drain electrode according to claim 8, it is characterised in that
In step (1), clean and be put into HCl using the deionized water of flowing:H2O=1:30～60s of corrosion is carried out in 1 solution,
Finally cleaned and dried up with high pure nitrogen with the deionized water of flowing；
In step (3), the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, and lower electrode power is
20W, chamber pressure are 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period be 5min～8min；
In step (5), the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, and lower electrode power is
20W, chamber pressure are 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period be 3min～5min；
In the step, first area is p-GaN layer and the simultaneous region of linear AlGaN layer, and second area is only linear AlGaN
The region of layer, its Al component increase linearly to line from Al components x in barrier layer AlGaN with the increase of linear AlGaN layer thickness
Property AlGaN layer Al component maximums y, i.e., appoint from the interface of AlGaN potential barrier and linear AlGaN layer to linear AlGaN layer
Al constituent contents at one thickness L1 are (y-x) × L1/L, and the Al constituent contents in the linear AlGaN layer are between 0～1；
In step (8), the process conditions of PECVD reative cells are：SiH4Flow be 40sccm, NH3Flow be 10sccm, instead
Answer chamber pressure to be 1～2Pa, radio-frequency power is 40W, deposit the thick SiN passivating films of 200nm～300nm；
In step (9), the process conditions in ICP dry etching reative cells are：Upper electrode power is 200W, and lower electrode power is
20W, chamber pressure are 1.5Pa, CF4Flow be 20sccm, the flow of argon gas is 10sccm, and etch period is 10min.
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| CN1738055A (en) * | 2005-08-26 | 2006-02-22 | 电子科技大学 | Gallium nitride based high electron mobility transistor |
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