CN103762235B - AlGaN/GaN high tension apparatus based on super junction leakage field plate and preparation method thereof - Google Patents
AlGaN/GaN high tension apparatus based on super junction leakage field plate and preparation method thereof Download PDFInfo
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- CN103762235B CN103762235B CN201410033431.8A CN201410033431A CN103762235B CN 103762235 B CN103762235 B CN 103762235B CN 201410033431 A CN201410033431 A CN 201410033431A CN 103762235 B CN103762235 B CN 103762235B
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 115
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 238000005036 potential barrier Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 84
- 238000001259 photo etching Methods 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a kind of AlGaN/GaN high tension apparatus based on super junction leakage field plate and preparation method thereof, the structure of high tension apparatus includes substrate, GaN cushion, intrinsic GaN(or AlGaN from bottom to up successively) channel layer, AlN sealing coat and AlGaN potential barrier, AlGaN potential barrier has source electrode, grid and compound drain electrode, compound drain electrode include: drain electrode and drain electrode field plate, between grid source, between grid leak, be also formed with linear AlGaN layer, source field plate, P type GaN(or InGaN) layer, base stage.The invention have benefit that: during break-over of device, the 2DEG concentration in first, second, and third region increases, resistance reduces, and reduces device on-resistance；During device cut-off, the 2DEG of first area reduces, identical when the 2DEG of second area is with break-over of device, adds the width of device depletion region, changes Electric Field Distribution, improves device electric breakdown strength；The present invention adopts compound drain electrode structure and grid source field plate, it is ensured that peak electric field does not appear in drain edge and the grid boundary near source, improves breakdown voltage.
Description
Technical field
The present invention relates to a kind of high tension apparatus and preparation method thereof, it is specifically related to a kind of based on the AlGaN/GaN high pressure of super junction leakage field plate, the high tension apparatus of low on-resistance and making thereof, can be used for making the AlGaN/GaN HEMT of high pressure low on-resistance, belong to microelectronics technology.
Background technology
, the characteristic such as breakdown electric field high, thermal conductivity high, saturated electrons speed big and heterojunction boundary two-dimensional electron gas high big with its energy gap with third generation broad stopband gap semiconductor that SiC and GaN is representative, receives significant attention in recent years.In theory, the devices such as high electron mobility transistor (HEMT) that these materials make, LED, laser diode LD are utilized to have obvious advantageous characteristic than existing device, therefore it has been carried out extensive and deep research by researcher both at home and abroad in the last few years, and achieves the achievement in research attracted people's attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) has had shown that advantageous advantage in high-temperature device and HIGH-POWERED MICROWAVES device, and pursuit device altofrequency, high pressure, high power have attracted numerous research.In recent years, make higher frequency high pressure AlGaN/GaNHEMT and become the another study hotspot of concern.After having grown due to AlGaN/GaN hetero-junctions, heterojunction boundary exists for a large amount of two-dimensional electron gas 2DEG, and its mobility is significantly high, and therefore we are obtained in that higher device frequency characteristic.In improving AlGaN/GaN hetero-junctions electron mobility transistor breakdown voltage, people have carried out substantial amounts of research, find that puncturing of AlGaN/GaNHEMT device occurs mainly in grid by drain terminal, therefore the breakdown voltage of device is improved, the electric field redistribution in grid leak region must be made, especially reduce grid by the electric field of drain terminal, for this, there has been proposed the method adopting field plate structure:
1. adopt field plate structure.Referring to YujiAndo, AkioWakejima, the NovelAlGaN/GaNdual-field-plateFETwithhighgain of YasuhiroOkamoto etc., increasedlinearityandstability, IEDM2005, pp.576-579,2005 (a kind of double; two field plate field-effect transistors with high-gain, high linearity and stability).AlGaN/GaNHEMT device adopts grid field plate and source field plate structure simultaneously, by the breakdown voltage of device from individually adopting the 125V of grid field plate to bring up to the 250V after adopting pair field plate, and reduces gate leakage capacitance, improve the linearity and the stability of device.
2. adopt super-junction structures.Referring to AkiraNakajima, the GaNbasedsuperheterojunctionfieldeffecttransistorsusingth epolarizationjunctionconcept (a kind of superjunction field-effect transistor based on GaN utilizing polarization knot) of YasunobuSumida, MaheshH.This device architecture has 2DEG and 2DHG simultaneously, when grid forward bias, there is not any change in the concentration of 2DEG, therefore the conducting resistance of device will not increase, when gate backbias, 2DEG in raceway groove can exhaust due to electric discharge, thus improve the breakdown voltage (being increased to 560V from 110V) of device, and conducting resistance is 6.1m Ω cm2。
But, all there is the weak point that conducting resistance is bigger in the high tension apparatus with above two structure.
Summary of the invention
For solving the deficiencies in the prior art, it is an object of the invention to provide a kind of structure of the AlGaN/GaN high tension apparatus based on super junction leakage field plate that the application to high pressure, low on-resistance requires that meets, and there is good controllability and repeatability make this method based on the AlGaN/GaN high tension apparatus of super junction leakage field plate.
In order to realize above-mentioned target, the present invention adopts the following technical scheme that:
A kind of AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterized in that, include successively from bottom to up: substrate, GaN cushion, intrinsic GaN channel layer or AlGaN channel layer, AlN sealing coat and AlGaN potential barrier, AlGaN potential barrier has in the horizontal direction successively: source electrode, grid and compound drain electrode, the drain electrode of aforementioned compound includes: drain electrode, by aforementioned drain electrode simultaneously upwards and the drain electrode field plate extended to form to grid direction, between source electrode and grid, the linear AlGaN layer of extension above AlGaN potential barrier between grid and compound drain electrode, the top of drain electrode field plate online property AlGaN layer, aforementioned grid also extends to form to source electrode direction and the source field plate of linear AlGaN layer upper surface, in linear AlGaN layer between grid and compound drain electrode, extension has p-type GaN epitaxial layer, and p-type GaN epitaxial layer has the base stage electrically connected with grid, linear AlGaN layer between grid and compound drain electrode, the width of p-type GaN epitaxial layer is sequentially reduced；Aforementioned AlGaN potential barrier is made up of the i type AlGaN layer of lower floor and the n-type AlGaN layer on upper strata；The upper surface of the drain electrode of aforementioned source electrode, grid, compound and base stage is also formed with adding thick electrode, and the both sides adding thick electrode are each formed with passivation layer.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that aforesaid substrate is sapphire, carborundum, GaN or MgO.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that in aforementioned AlGaN potential barrier, the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively x, 1-x, 1,1 > x > 0.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that in aforementioned linear AlGaN layer, the direction that the component of Al grows along material epitaxy is increased linearly to y by x, and the component of Al and Ga can regulate, the component of Al, Ga, N respectively y, 1-y, 1,1 > y > x > 0.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that in aforementioned intrinsic AlGaN channel layer, the component of Al is less than x, and the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively z, 1-z, 1,1 > x > z > 0.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that aforementioned passivation layer is SiN, Al2O3Or HfO2。
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that the width < 1 μm in aforementioned drain electrode field plate online property AlGaN layer.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that width≤1 μm of aforementioned grid source field plate.
The aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that aforementioned p-type GaN layer is replaced by p-type InGaN layer, in aforementioned p-type InGaN layer, In component is constant or In component is gradually increased.
The method making the aforesaid AlGaN/GaN high tension apparatus based on super junction leakage field plate, it is characterised in that comprise the following steps:
(1) the linear AlGaN/AlGaN/AlN/GaN material of epitaxially grown p-GaN/ is carried out organic washing, clean with the deionized water of flowing and put into HCl:H2The solution of O=1:1 carries out corrosion 30-60s, finally cleans with the deionized water of flowing and dry up with high pure nitrogen；
(2) the AlGaN/AlN/GaN heterojunction material cleaned up is carried out photoetching and dry etching, be formed with region meas；
(3) the AlGaN/AlN/GaN heterojunction material preparing table top is carried out photoetching, form the etched area of p-type GaN and linear AlGaN layer, put in ICP dry etching reative cell and etch, the p-type GaN epitaxial layer above the drain electrode of grid, source electrode and compound, linear AlGaN layer are all etched away；
(4) device is carried out photoetching, be then placed in electron beam evaporation platform and deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, in nitrogen environment, finally carry out the rapid thermal annealing of 850 DEG C of 35s, form Ohmic contact；
(5) device preparing Ohmic contact is carried out photoetching, form the etched area of p-type GaN epitaxial layer, put in ICP dry etching reative cell and etch, by between grid and drain electrode between subregion and grid and source electrode the p-type GaN epitaxial layer of Zone Full etch away, form between grid leak the 3rd region between first area and second area and grid source；
(6) device preparing Ohmic contact is carried out photoetching, form base region, be then placed in electron beam evaporation platform and deposit Ni/Au=20/20nm and peel off, in atmospheric environment, finally carry out the annealing of 550 DEG C of 10min, form base ohmic contact；
(7) photoetching is carried out to completing device prepared by base stage, form gate metal, grid source field plate and drain electrode field plate region, it is then placed in electron beam evaporation platform and deposits Ni/Au=20/200nm and peel off, complete the preparation of grid, grid source field plate and drain electrode field plate；
(8) device completing preparation being put into PECVD reative cell deposit SiN passivating film, the deposition thickness of passivating film is 200nm-300nm；
(9) device is carried out again, photoetching development, formed SiN thin film etched area, and put in ICP dry etching reative cell etch, SiN thin film source electrode, drain and gate covered above etches away；
(10) device is carried out, photoetching development, and put in electron beam evaporation platform deposit Ti/Au=20/200nm add thick electrode, complete the preparation of integral device.
The invention have benefit that:
1, between grid leak, between first area, second area and grid source, the 3rd region is formed such that: during break-over of device, the 2DEG concentration in first area, second area and the 3rd region increases, and resistance is reduced, and has reached to reduce the purpose of device on-resistance；During device cut-off, the 2DEG of first area is reduced, identical when the 2DEG of second area is with break-over of device, adds the width of device depletion region, changes Electric Field Distribution, has reached to improve the purpose of device electric breakdown strength；
2, the present invention adopts compound drain electrode structure and grid source field plate, it is ensured that peak electric field does not appear in drain edge and the grid boundary near source, has reached to improve the purpose of device electric breakdown strength；
3, the method for the present invention, has good controllability and repeatability.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a specific embodiment of the high tension apparatus of the present invention；
Fig. 2 is the fabrication processing figure of the high tension apparatus of the present invention.
The implication of accompanying drawing labelling in figure: 1-substrate, 2-GaN cushion, 3-intrinsic GaN channel layer, 4-AlN sealing coat, 5-AlGaN barrier layer, 501-i type AlGaN layer, 502-n type AlGaN layer, 6-source electrode, 7-grid, 8-drains, and 9-drains field plate, the linear AlGaN layer of 10-, 11-source field plate, 12-p type GaN epitaxial layer, 13-base stage, 14-adds thick electrode, 15-passivation layer, and D1 represents that first area, D2 represent that second area, D3 represent the 3rd region.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention done concrete introduction.
First, the structure of the AlGaN/GaN high tension apparatus based on super junction leakage field plate of the present invention is introduced.
With reference to Fig. 1, the AlGaN/GaN high tension apparatus based on super junction leakage field plate of the present invention, its structure includes from bottom to up successively: substrate 1, GaN cushion 2, intrinsic GaN channel layer 3 (intrinsic GaN channel layer 3 can also use AlGaN channel layer to replace), AlN sealing coat 4 and AlGaN potential barrier 5, AlGaN potential barrier 5 is made up of the i type AlGaN layer 501 of lower floor and the n-type AlGaN layer 502 on upper strata, wherein, AlGaN potential barrier 5 has in the horizontal direction successively: source electrode 6, grid 7 and compound drain electrode, compound drain electrode includes: drain electrode 8, by drain electrode 8 simultaneously upwards and the drain electrode field plate 9 extended to form to grid 7 direction.The linear AlGaN layer 10 of extension above AlGaN potential barrier 5 between source electrode 6 and grid 7, between grid 7 and compound drain electrode, drain electrode field plate 9 is above linear AlGaN layer 10, grid 7 also extends to form to source electrode 6 direction and the source field plate 11 of linear AlGaN layer 10 upper surface, width≤1 μm of source field plate 11；In linear AlGaN layer 10 between grid 7 and compound drain electrode, extension has p-type GaN epitaxial layer 12 (p-type GaN epitaxial layer 12 can also use p-type InGaN layer to replace, in p-type InGaN layer, In component is constant or In component is gradually increased), and p-type GaN epitaxial layer 12 has the base stage 13 electrically connected with grid 7, the linear AlGaN layer 10 between grid 7 and compound drain electrode, the width of p-type GaN epitaxial layer 12 are sequentially reduced.Additionally, the upper surface of the drain electrode of source electrode 6, grid 7, compound and base stage 13 is also formed with adding thick electrode 14, the both sides adding thick electrode 14 are each formed with passivation layer 15, passivation layer 15 preferred SiN, Al2O3Or HfO2。
As the preferred scheme of one, substrate is sapphire, carborundum, GaN or MgO.
As the preferred scheme of one, in AlGaN potential barrier 5, the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively x, 1-x, 1,0 < x < 1, i.e. AlxGa1-xN。
It is further preferred that in linear AlGaN layer 10, the component of Al is increased linearly to y along the direction that material epitaxy grows by x, and the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively y, 1-y, 1,1 > y > x > 0, i.e. AlyGa1-yN。
It is assumed that the thickness of linear AlGaN layer 10 is L, then the distance of the lower surface from linear AlGaN layer is L1The weight content of place Al is: (y-x) × L1/L。
It is further preferred that in intrinsic AlGaN channel layer, the component of Al is less than x, and the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively z, 1-z, 1,1 > x > z > 0, i.e. AlzGa1-zN。
It follows that introduce the method making the above-mentioned AlGaN/GaN high tension apparatus based on super junction leakage field plate.
With reference to Fig. 2, this manufacture method comprises the following steps:
1, the linear AlGaN/AlGaN/AlN/GaN material of epitaxially grown p-GaN/ is carried out organic washing, clean with the deionized water of flowing and put into HCl:H2The solution of O=1:1 carries out corrosion 30-60s, finally cleans with the deionized water of flowing and dry up with high pure nitrogen.
2, the AlGaN/AlN/GaN heterojunction material cleaned up is carried out photoetching and dry etching, be formed with region meas.
3, the AlGaN/AlN/GaN heterojunction material preparing table top is carried out photoetching, form the etched area of p-type GaN and linear AlGaN layer, put in ICP dry etching reative cell, process conditions are: upper electrode power is 200W, lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period is 5min-8min, and by the p-type GaN epitaxial layer of grid, source electrode and compound drain electrode top, linear AlGaN layer all etches away.
4, device is carried out photoetching, be then placed in electron beam evaporation platform and deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, in nitrogen environment, finally carry out the rapid thermal annealing of 850 DEG C of 35s, form Ohmic contact.
5, the device preparing Ohmic contact carrying out photoetching, form the etched area of p-type GaN epitaxial layer, put in ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, Cl2Flow be 10sccm, N2Flow be 10sccm, etch period is 3min-5min, the p-type GaN epitaxial layer of subregion between grid and drain electrode is etched away, form first area D1 (i.e. p-type GaN epitaxial layer and the simultaneous region of linear AlGaN layer between grid leak) and second area D2 between grid leak (i.e. the region of only linear AlGaN layer between grid leak) and the 3rd region D3 (i.e. the region of linear AlGaN layer between grid source) between grid source.
6, the device preparing Ohmic contact is carried out photoetching, form base region, be then placed in electron beam evaporation platform and deposit Ni/Au=20/20nm and peel off, in atmospheric environment, finally carry out the annealing of 550 DEG C of 10min, form base ohmic contact.
7, carry out photoetching to completing device prepared by base stage, form gate metal, grid source field plate and drain electrode field plate region, be then placed in electron beam evaporation platform and deposit Ni/Au=20/200nm and peel off, complete the preparation of grid, grid source field plate and drain electrode field plate.
8, putting into PECVD reative cell deposit SiN passivating film by completing device prepared by grid, concrete technology condition is: SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure is 1-2Pa, and radio-frequency power is 40W, the SiN passivating film that deposit 200nm-300nm is thick.
9, device is carried out again, photoetching development, form the etched area of SiN thin film, and put in ICP dry etching reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4The flow that flow is 20sccm, Ar gas be 10sccm, etch period is 10min, is etched away by the SiN thin film that source electrode and drain electrodes cover.
10, device is carried out, photoetching development, and put in electron beam evaporation platform deposit Ti/Au=20/200nm add thick electrode, complete the preparation of integral device.
As can be seen here, the method for the present invention has good controllability and repeatability.
Due to the present invention high tension apparatus its be formed: the 3rd region D3 between first area D1, second area D2 and grid source between grid leak so that:
(1) during break-over of device, the increase of the AlGaN/GaN interface 2DEG concentration immediately below the D1 of first area, immediately below second area D2 and immediately below the 3rd region D3 is nearly identical, it is all higher than the 2DEG concentration in raceway groove, therefore trizonal resistance all reduces to some extent, has reached to reduce the purpose of device on-resistance；
(2) during device cut-off (during grid 7 voltages≤threshold voltage), the 2DEG in raceway groove immediately below grid 7 is depleted, meanwhile owing to base stage 13 electrically connects with grid 7, therefore the 2DEG concentration immediately below the D1 of first area reduces (being even reduced to 50%) to some extent, the width making the depletion region of device increases to some extent, the region of afforded high electric field is widened, and has reached to improve the purpose of device electric breakdown strength；Additionally, identical when the 2DEG concentration immediately below second area D2 is with break-over of device, be conducive to the redistribution of electric field.
Further, since the high tension apparatus of the present invention have employed drain electrode field plate 9 and grid source field plate, it is ensured that peak electric field does not appear in drain electrode 8 and the grid boundary near source so that device electric breakdown strength is improved again.
To sum up aforementioned, the high tension apparatus of the present invention conducting resistance when conducting is reduced, and the breakdown voltage when cut-off state is improved, and has well taken into account the raising of device electric breakdown strength and the reduction of conducting resistance.
It should be noted that above-described embodiment does not limit the present invention in any form, all employings are equal to the technical scheme that the mode of replacement or equivalent transformation obtains, and all fall within protection scope of the present invention.
Claims (10)
1. based on the AlGaN/GaN high tension apparatus of super junction leakage field plate, it is characterized in that, include successively from bottom to up: substrate, GaN cushion, intrinsic GaN channel layer or AlGaN channel layer, AlN sealing coat and AlGaN potential barrier, AlGaN potential barrier has in the horizontal direction successively: source electrode, grid and compound drain electrode, the drain electrode of described compound includes: drain electrode, by described drain electrode simultaneously upwards and the drain electrode field plate extended to form to grid direction, between source electrode and grid, the linear AlGaN layer of extension above AlGaN potential barrier between grid and compound drain electrode, the top of drain electrode field plate online property AlGaN layer, described grid also extends to form to source electrode direction and the source field plate of linear AlGaN layer upper surface, in linear AlGaN layer between grid and compound drain electrode, extension has p-type GaN epitaxial layer, and p-type GaN epitaxial layer has the base stage electrically connected with grid, linear AlGaN layer between grid and compound drain electrode, the width of p-type GaN epitaxial layer is sequentially reduced；Described AlGaN potential barrier is made up of the i type AlGaN layer of lower floor and the n-type AlGaN layer on upper strata；The upper surface of the drain electrode of described source electrode, grid, compound and base stage is also formed with adding thick electrode, and the both sides adding thick electrode are each formed with passivation layer.
2. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that described substrate is sapphire, carborundum, GaN or MgO.
3. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that in described AlGaN potential barrier, the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively x, 1-x, 1,1 > x > 0.
4. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 3, it is characterized in that, in described linear AlGaN layer, the direction that the component of Al grows along material epitaxy is increased linearly to y by x, and the component of Al and Ga can regulate, the component of Al, Ga, N respectively y, 1-y, 1,1 > y > x > 0.
5. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 3, it is characterised in that in described intrinsic AlGaN channel layer, the component of Al is less than x, and the component ratio of Al and Ga can regulate, the component of Al, Ga, N respectively z, 1-z, 1,1 > x > z > 0.
6. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that described passivation layer is SiN, Al2O3Or HfO2。
7. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that the width < 1 μm in described drain electrode field plate online property AlGaN layer.
8. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that width≤1 μm of described grid source field plate.
9. the AlGaN/GaN high tension apparatus based on super junction leakage field plate according to claim 1, it is characterised in that described p-type GaN layer is replaced by p-type InGaN layer, in described p-type InGaN layer, In component is constant or In component is gradually increased.
10. the method for the making AlGaN/GaN high tension apparatus based on super junction leakage field plate described in claim 1, it is characterised in that comprise the following steps:
(1) the linear AlGaN/AlGaN/AlN/GaN material of epitaxially grown p-GaN/ is carried out organic washing, clean with the deionized water of flowing and put into HCl:H2The solution of O=1:1 carries out corrosion 30-60s, finally cleans with the deionized water of flowing and dry up with high pure nitrogen；
(2) the AlGaN/AlN/GaN heterojunction material cleaned up is carried out photoetching and dry etching, be formed with region meas；
(3) the AlGaN/AlN/GaN heterojunction material preparing table top is carried out photoetching, form the etched area of p-type GaN and linear AlGaN layer, put in ICP dry etching reative cell and etch, the p-type GaN epitaxial layer above the drain electrode of grid, source electrode and compound, linear AlGaN layer are all etched away；
(4) device is carried out photoetching, be then placed in electron beam evaporation platform and deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peel off, in nitrogen environment, finally carry out the rapid thermal annealing of 850 DEG C of 35s, form Ohmic contact；
(5) device preparing Ohmic contact is carried out photoetching, form the etched area of p-type GaN epitaxial layer, put in ICP dry etching reative cell and etch, by between grid and drain electrode between subregion and grid and source electrode the p-type GaN epitaxial layer of Zone Full etch away, form between grid leak the 3rd region between first area and second area and grid source；
(6) device preparing Ohmic contact is carried out photoetching, form base region, be then placed in electron beam evaporation platform and deposit Ni/Au=20/20nm and peel off, in atmospheric environment, finally carry out the annealing of 550 DEG C of 10min, form base ohmic contact；
(7) photoetching is carried out to completing device prepared by base stage, form gate metal, grid source field plate and drain electrode field plate region, it is then placed in electron beam evaporation platform and deposits Ni/Au=20/200nm and peel off, complete the preparation of grid, grid source field plate and drain electrode field plate；
(8) device completing preparation being put into PECVD reative cell deposit SiN passivating film, the deposition thickness of passivating film is 200nm-300nm；
(9) device is carried out again, photoetching development, formed SiN thin film etched area, and put in ICP dry etching reative cell etch, SiN thin film source electrode, drain and gate covered above etches away；
(10) device is carried out, photoetching development, and put in electron beam evaporation platform deposit Ti/Au=20/200nm add thick electrode, complete the preparation of integral device.
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