CN103733299B - 扫描电子显微镜 - Google Patents

扫描电子显微镜 Download PDF

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Publication number
CN103733299B
CN103733299B CN201280039396.XA CN201280039396A CN103733299B CN 103733299 B CN103733299 B CN 103733299B CN 201280039396 A CN201280039396 A CN 201280039396A CN 103733299 B CN103733299 B CN 103733299B
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China
Prior art keywords
electron
electrons
sample
detector
reflected
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CN201280039396.XA
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English (en)
Chinese (zh)
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CN103733299A (zh
Inventor
森下英郎
大岛卓
波田野道夫
伊东祐博
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2444—Electron Multiplier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2804—Scattered primary beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201280039396.XA 2011-09-07 2012-05-28 扫描电子显微镜 Active CN103733299B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011194563A JP5860642B2 (ja) 2011-09-07 2011-09-07 走査電子顕微鏡
JP2011-194563 2011-09-07
PCT/JP2012/063632 WO2013035389A1 (ja) 2011-09-07 2012-05-28 走査電子顕微鏡

Publications (2)

Publication Number Publication Date
CN103733299A CN103733299A (zh) 2014-04-16
CN103733299B true CN103733299B (zh) 2016-05-11

Family

ID=47831852

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280039396.XA Active CN103733299B (zh) 2011-09-07 2012-05-28 扫描电子显微镜

Country Status (5)

Country Link
US (1) US9029766B2 (https=)
JP (1) JP5860642B2 (https=)
CN (1) CN103733299B (https=)
DE (1) DE112012003413B4 (https=)
WO (1) WO2013035389A1 (https=)

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CN114420523B (zh) * 2015-11-30 2025-04-15 Asml荷兰有限公司 多个带电粒子束的设备
CN107342205B (zh) * 2016-05-03 2019-07-23 睿励科学仪器（上海）有限公司 一种带电粒子探测装置
WO2018020626A1 (ja) * 2016-07-28 2018-02-01 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
JP6718782B2 (ja) * 2016-09-21 2020-07-08 日本電子株式会社 対物レンズおよび透過電子顕微鏡
CN106645250B (zh) * 2016-11-21 2024-04-26 宁波聚瑞精密仪器有限公司 一种具备光学成像功能的扫描透射电子显微镜
CN106770405A (zh) * 2016-12-09 2017-05-31 清华大学 一种完全大气压下超光学衍射成像装置
EP3563399A4 (en) * 2016-12-29 2020-07-29 The University of British Columbia OPTICALLY ADDRESSED THERMAL ELECTRON BEAM DEVICE
JP6857511B2 (ja) 2017-02-23 2021-04-14 日本電子株式会社 走査電子顕微鏡
CN106920723A (zh) * 2017-03-06 2017-07-04 聚束科技（北京）有限公司 一种扫描聚焦系统及电子束控制方法
DE112017008344B4 (de) 2017-03-24 2024-05-29 Hitachi High-Tech Corporation Ladungsteilchenstrahl-vorrichtung
WO2018173242A1 (ja) 2017-03-24 2018-09-27 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
CZ309855B6 (cs) 2017-09-20 2023-12-20 Tescan Group, A.S. Zařízení s iontovým tubusem a rastrovacím elektronovým mikroskopem
US10777382B2 (en) 2017-11-21 2020-09-15 Focus-Ebeam Technology (Beijing) Co., Ltd. Low voltage scanning electron microscope and method for specimen observation
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
JP6605080B2 (ja) * 2018-06-25 2019-11-13 株式会社ホロン 超高速電子検出器および該検出器を組み込んだ走査型電子ビーム検査装置
JP6843913B2 (ja) * 2019-03-28 2021-03-17 日本電子株式会社 透過電子顕微鏡の制御方法および透過電子顕微鏡
CN110133836B (zh) * 2019-05-31 2024-04-19 宁波大学 一种微结构固定荧光粉末的方法及装置
JP7197698B2 (ja) * 2019-07-02 2022-12-27 株式会社日立ハイテク 荷電粒子線装置
WO2021180745A1 (en) * 2020-03-11 2021-09-16 Asml Netherlands B.V. Systems and methods for signal electron detection
US11183361B1 (en) * 2020-05-19 2021-11-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
US11239043B2 (en) * 2020-05-19 2022-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
CN113758955A (zh) * 2020-06-01 2021-12-07 宸鸿科技(厦门)有限公司 利用扫描式电子显微镜观测表面不含导电层的样品的方法
JP7004776B2 (ja) * 2020-07-27 2022-01-21 株式会社日立ハイテク 荷電粒子ビーム装置
CN114171361B (zh) * 2020-09-11 2024-09-06 聚束科技（北京）有限公司 一种电子显微镜
CN114256043B (zh) * 2020-12-02 2024-04-05 聚束科技（北京）有限公司 一种电子束系统
CN114220725B (zh) 2020-12-02 2024-05-07 聚束科技（北京）有限公司 一种电子显微镜
CN112652510B (zh) * 2020-12-16 2022-05-10 中国科学院西安光学精密机械研究所 一种大视场、低像差电子光学成像系统及成像方法
US12461126B2 (en) 2021-06-29 2025-11-04 Hitachi High-Tech Corporation Probe device
CN113539769B (zh) * 2021-07-16 2023-01-17 苏州矽视科技有限公司 一种实现共轴的电子束成像设备及实现方法
US11749495B2 (en) * 2021-10-05 2023-09-05 KLA Corp. Bandpass charged particle energy filtering detector for charged particle tools
JP2025522268A (ja) * 2022-06-10 2025-07-15 エーエスエムエル ネザーランズ ビー．ブイ． 高速焦点補正機能を備えた荷電粒子ビーム装置及びその方法
US12525422B2 (en) * 2022-08-08 2026-01-13 Fei Company Charged particle optics components and their fabrication
US12592357B2 (en) * 2022-12-09 2026-03-31 Kla Corporation System and method for multi-beam electron microscopy using a detector array
WO2024152501A1 (zh) * 2023-01-18 2024-07-25 纳克微束(北京)有限公司 一种双内置复合结构的探测系统
US12542252B1 (en) * 2023-01-26 2026-02-03 Carl Zeiss Microscopy Gmbh Method of operating a particle beam system, particle beam system, non-transitory storage medium and program
KR20250139878A (ko) * 2023-02-06 2025-09-23 칼 짜이스 멀티셈 게엠베하 대전 효과의 고속 보상을 위한 검출 유닛을 갖는 다중 빔 하전 입자 현미경
US12542253B2 (en) * 2023-02-28 2026-02-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle optics, charged particle beam apparatus, and method for scanning a charged particle beam
DE102023106025A1 (de) 2023-03-10 2024-09-12 Carl Zeiss Microscopy Gmbh Teilchenstrahlmikroskop
DE102023106030A1 (de) 2023-03-10 2024-09-12 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop
WO2024242993A2 (en) * 2023-05-19 2024-11-28 Yale University Systems and methods for subvoxel sem based volume electron microscopy
CN116646228B (zh) * 2023-07-20 2023-10-27 北京惠然肯来科技中心(有限合伙) 快速聚焦扫描偏转装置、扫描电子显微镜
KR20250166833A (ko) * 2024-04-23 2025-11-28 씨아이큐텍 컴퍼니 리미티드 전자 검출장치 및 주사전자현미경
US20250385066A1 (en) * 2024-06-14 2025-12-18 Kla Corporation High-voltage column with permanent magnet lens and positive wafer bias for overlay
DE102024002911B4 (de) 2024-09-10 2026-03-19 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop und Verfahren zum Betreiben desselben
DE102024004580A1 (de) 2024-09-10 2026-03-12 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop
DE102024002909A1 (de) 2024-09-10 2026-03-12 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop

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EP0561584A1 (en) * 1992-03-19 1993-09-22 Hitachi, Ltd. A scanning electron microscope and method for controlling a scanning electron microscope
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Also Published As

Publication number Publication date
DE112012003413T5 (de) 2014-05-08
DE112012003413B4 (de) 2017-10-19
CN103733299A (zh) 2014-04-16
WO2013035389A1 (ja) 2013-03-14
JP2013058314A (ja) 2013-03-28
US9029766B2 (en) 2015-05-12
JP5860642B2 (ja) 2016-02-16
US20140361167A1 (en) 2014-12-11

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