CN103730487B - 一种提高正向耐压的可控硅台面结构及其制造工艺 - Google Patents
一种提高正向耐压的可控硅台面结构及其制造工艺 Download PDFInfo
- Publication number
- CN103730487B CN103730487B CN201310682429.9A CN201310682429A CN103730487B CN 103730487 B CN103730487 B CN 103730487B CN 201310682429 A CN201310682429 A CN 201310682429A CN 103730487 B CN103730487 B CN 103730487B
- Authority
- CN
- China
- Prior art keywords
- mesa
- mesa structure
- controllable silicon
- recess
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 20
- 230000007797 corrosion Effects 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000035515 penetration Effects 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000428 dust Substances 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229960000583 acetic acid Drugs 0.000 claims description 10
- 239000012362 glacial acetic acid Substances 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 6
- 238000005488 sandblasting Methods 0.000 claims description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 2
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101001050294 Homo sapiens Sperm-egg fusion protein Juno Proteins 0.000 description 1
- 102100023119 Sperm-egg fusion protein Juno Human genes 0.000 description 1
- 241001080929 Zeugopterus punctatus Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66121—Multilayer diodes, e.g. PNPN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310682429.9A CN103730487B (zh) | 2013-12-16 | 2013-12-16 | 一种提高正向耐压的可控硅台面结构及其制造工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310682429.9A CN103730487B (zh) | 2013-12-16 | 2013-12-16 | 一种提高正向耐压的可控硅台面结构及其制造工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103730487A CN103730487A (zh) | 2014-04-16 |
CN103730487B true CN103730487B (zh) | 2017-07-18 |
Family
ID=50454501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310682429.9A Active CN103730487B (zh) | 2013-12-16 | 2013-12-16 | 一种提高正向耐压的可控硅台面结构及其制造工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103730487B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201626279A (zh) * | 2015-01-06 | 2016-07-16 | 緯創資通股份有限公司 | 保護方法與其電腦系統 |
CN104900692A (zh) * | 2015-06-15 | 2015-09-09 | 江苏东晨电子科技有限公司 | 一种台面晶闸管及其制备方法 |
CN111816553B (zh) * | 2020-05-29 | 2023-01-03 | 济宁东方芯电子科技有限公司 | 一种穿通结构可控硅芯片的生产方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790083A (zh) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | 一种改进的可控硅结构及其生产工艺 |
CN102789980A (zh) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | 一种提高电压的短基区结构的生产工艺 |
CN103035491A (zh) * | 2012-12-28 | 2013-04-10 | 浙江正邦电力电子有限公司 | 一种电力半导体芯片台面处理方法 |
CN203659873U (zh) * | 2013-12-16 | 2014-06-18 | 启东吉莱电子有限公司 | 一种提高正向耐压的可控硅台面结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7628932B2 (en) * | 2006-06-02 | 2009-12-08 | Micron Technology, Inc. | Wet etch suitable for creating square cuts in si |
-
2013
- 2013-12-16 CN CN201310682429.9A patent/CN103730487B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790083A (zh) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | 一种改进的可控硅结构及其生产工艺 |
CN102789980A (zh) * | 2012-07-18 | 2012-11-21 | 启东吉莱电子有限公司 | 一种提高电压的短基区结构的生产工艺 |
CN103035491A (zh) * | 2012-12-28 | 2013-04-10 | 浙江正邦电力电子有限公司 | 一种电力半导体芯片台面处理方法 |
CN203659873U (zh) * | 2013-12-16 | 2014-06-18 | 启东吉莱电子有限公司 | 一种提高正向耐压的可控硅台面结构 |
Also Published As
Publication number | Publication date |
---|---|
CN103730487A (zh) | 2014-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103730487B (zh) | 一种提高正向耐压的可控硅台面结构及其制造工艺 | |
CN108598180A (zh) | 一种整流二极管及其制备方法 | |
CN108193281A (zh) | 多晶黑硅制绒工艺 | |
JP6191587B2 (ja) | 半導体装置 | |
CN102790083B (zh) | 一种改进的可控硅结构及其生产工艺 | |
CN102142465A (zh) | 一种肖特基二极管的正面电极结构及其工艺制造方法 | |
CN104810283A (zh) | 一种适用于压接式封装的igbt芯片制造方法 | |
CN109103242A (zh) | 一种穿通结构的可控硅芯片及其生产方法 | |
CN108565222A (zh) | 一种SiC器件的横向变掺杂结终端结构制作方法 | |
CN102789981B (zh) | 一种可控硅的生产工艺 | |
CN105244414B (zh) | 一种二硫化钼/ 硅异质结太阳能电池及其制备方法 | |
CN103762265B (zh) | 基于标准cmos工艺的新型光互连结构及其制备方法 | |
CN101339955B (zh) | 门极灵敏触发单向可控硅芯片及其生产方法 | |
CN107680962A (zh) | 一种低正向电压tvs器件及其制造方法 | |
CN107634096A (zh) | 一种具有沟道截止环的可控硅及其制造方法 | |
CN203659873U (zh) | 一种提高正向耐压的可控硅台面结构 | |
CN107245761A (zh) | 金刚线多晶硅片制绒辅助剂及其应用 | |
TWI421921B (zh) | 半導體裝置及其製造方法 | |
CN208706655U (zh) | 一种穿通结构的可控硅芯片 | |
CN103730488B (zh) | 一种切割槽形成可控硅穿通结构及其方法 | |
CN106783606A (zh) | 功率半导体器件及其制备方法 | |
JP6235190B1 (ja) | 半導体装置の製造方法 | |
CN205428940U (zh) | 一种带有深阱终端环结构的平面可控硅芯片 | |
CN111668100B (zh) | 一种快恢复二极管及其制备方法和应用 | |
CN209766425U (zh) | 一种带有过压斩波特性的可控硅芯片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 226200 1261 Gongyuan North Road, Huilong Town, Nantong City, Jiangsu Province Patentee after: Jiangsu Jilai Microelectronics Co.,Ltd. Address before: 226200 1261 Gongyuan North Road, Huilong Town, Qidong City, Nantong City, Jiangsu Province Patentee before: QIDONG JILAI ELECTRONICS Co.,Ltd. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 226200 1800 Mudanjiang West Road, Huilong Town, Qidong City, Nantong City, Jiangsu Province Patentee after: Jiangsu Jilai Microelectronics Co.,Ltd. Address before: 226200 1261 Gongyuan North Road, Huilong Town, Nantong City, Jiangsu Province Patentee before: Jiangsu Jilai Microelectronics Co.,Ltd. |