CN103681543A - 倒装芯片封装的矩阵盖散热器 - Google Patents

倒装芯片封装的矩阵盖散热器 Download PDF

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CN103681543A
CN103681543A CN201310415650.8A CN201310415650A CN103681543A CN 103681543 A CN103681543 A CN 103681543A CN 201310415650 A CN201310415650 A CN 201310415650A CN 103681543 A CN103681543 A CN 103681543A
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array
filler cap
radiator filler
integrated circuit
layer
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CN103681543B (zh
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G·R·雷尔
T·V·潘
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/171—Frame
    • H01L2924/176—Material
    • H01L2924/177—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/17738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/171—Frame
    • H01L2924/176—Material
    • H01L2924/177—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/17738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/17747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本公开涉及倒装芯片封装的矩阵盖散热器。提供一种方法和装置以用于制作基于引线框的热增强倒装芯片封装，其中带有散热器盖阵列（310），其通过将热界面粘附层（308）包括在每个芯片（306）以及用模塑化合物（321）封装除了所述散热器（312）的平面上盖表面的附着的散热器盖阵列（310）和集成电路管芯（306）阵列而被设计为直接附着于一个集成电路管芯（306）阵列。

Description

倒装芯片封装的矩阵盖散热器
技术领域
本发明涉及集成电路封装以及一种制作方法。一方面，本发明涉及带有盖散热器的集成电路封装。
背景技术
由于集成电路器件密度和复杂性的增大以及这种器件的缩小，在这些器件的设计和封装方面就有了显著的挑战。一个挑战就是在封装内提供热路径以将热从集成电路管芯上传导出去，其中用于移除封装内所生成的热量的传统方法通常使用分别被应用于独立封装单元的独立金属盖或散热器，然后用模塑化合物封装。按照单独散热器的单独应用程序要求以及有效地使用更大体尺寸以允许超越用于锯切的盖的沿的空间，使用独立盖对多个集成电路的制作不够有效。此外，这种封装通常在管芯结表面和散热器之间有相对高的热阻，特别是当模塑化合物在其之间形成的时候。虽然已经提出了用于引线键合集成电路管芯倒装芯片封装的暴露的散热器，但是这种方法呈现了对出封装可靠性方面的挑战，其中装入散热器盖的过量封装材料损害了从集成电路管芯的传热，以及当过量封装材料从散热器盖被移除的时候的低制作效率。
因此，需要一个改进的集成电路管芯封装以及解决了由上面指定的发明人发现的在本领域中的各种问题的制作方法，其中在参考下面的附图和详细说明书阅读本发明申请的剩余部分之后，虽然应了解背景技术部分的描述不旨在作为承认所描述主题是现有技术，传统方案和技术的各种局限性以及弊端对本领域所属技术人员来说将会变得很明显。
附图说明
当结合附图参考详细说明书的时候，本发明可以被更好的理解，并且获得多个目的、特征，以及优点，其中：
图1说明了散热器盖的平面阵列和安装到被放置在较低模塑封装模具上的载体衬底上的集成电路管芯的透视图；
图2说明了图1中所显示的散热器盖的平面阵列的一个平面图；
图3说明了附着于在被放置到较低模塑封装模具之前被安装到载体衬底上的集成电路管芯的散热器盖的平面阵列的管芯侧视图；
图4说明了向上设置/向下设置的散热器盖的阵列和安装到被放置在较低模塑封装模具上的载体衬底上的集成电路管芯的透视图；
图5说明了附着于在被放置到较低模塑封装模具之前被安装到载体衬底上的集成电路管芯的向上设置/向下设置的散热器盖的侧视图；
图6是根据本发明的各种实施例的可以被用于形成热增强倒装芯片集成电路散热器盖封装的各种制作过程步骤的图表描述；以及
图7说明了根据本发明所选择的实施例描述使用散热器盖阵列制作热增强集成电路散热器盖封装的过程的例子流程图。
具体实施方式
描述一种用于制作带有低分布热增强倒装芯片封装的集成电路管芯的方法和装置；该封装有暴露的并且可以被形成为倒装芯片封装的阵列的散热器盖，其中在切单（singulation）之前保持暴露散热器盖的封装过程期间，散热器被配置为通过热界面材料（TIM）层与集成电路管芯进行热接触的冲压或蚀刻金属或其它导热材料的阵列。在所选择的实施例中，散热器盖阵列被形成为盖和连接杆的平面阵列，连接杆通过减少被切割的金属量而有助于锯切（saw singulation）并且延长了锯片的寿命。在其它实施例中，散热器盖阵列被形成为向上设置的盖和向下设置的连接杆的阵列，其中在所期望的锯切或刻线中有减少的金属以有助于锯切。正如所形成的，散热片盖阵列包括尺寸合适的盖以最大化从倒装芯片集成电路管芯组件中传导出去的热量。此外，通过使用有受控制的厚度和良好导热特性的缓冲（compliant）TIM层，散热器盖阵列附着于集成电路管芯的顶面以最小化管芯和附着的散热器盖之间的热阻。在每个管芯上使用可压缩或缓冲TIM层（独自或结合模具表面上的缓冲聚合物膜）不仅改进了热导性，而且通过帮助吸收与模腔高度有关的集成电路管芯/载体衬底/散热器组件的高度的任何厚度变化，适应了制作公差。
现在参照附图被详细描述本发明的各种说明实施例。虽然各种细节在下面的描述中被陈述了，应了解本发明可以在没有那些详细说明的情况下实施，并且很多特定实施决定可以在本发明的描述中被作出以实现器件设计师的特定目标，例如符合工艺技术或与设计相关的约束。该技术和约束从一个实现到另一个实现是不同的。虽然这种发展工作可以是复杂的并且是费时的，然而对受益于本公开的本领域技术人员来说，其可以是一个常规任务。例如，选定的方面是参照各种制作阶段期间的一个集成电路封装的简化原理图和截面图被描述的，而没有包括每个器件特征或几何形状以避免限定或模糊本发明。此外，附图中的某些元件说明是为了简便以及清晰，不一定按比例绘制。还应注意，通过这个详细说明书，若干层材料将被沉积、移除或以其它方式处理以形成所描述的带有暴露的散热盖的封装结构。用于形成这种层的具体步骤在下面没有被详细描述，对于本领域所属技术人员来说用于沉积、移除或以其它方式形成适合厚度的这种层的常规技术是所期望的。这些细节是众所周知的并且没有必要教导本领域所属技术人员如何制作或使用本发明。
现在参照图1，图1显示了散热器盖140的平面阵列和安装到被放置在较低模塑封装模具100上的载体衬底上的集成电路管芯121－129的阵列的透视图1。散热器盖140的平面阵列可以形成为导热金属层或其它导热材料层。在所选择的实施例中，导热或散热器层140可以通过使用本领域已知的蚀刻或冲压的引线框技术由有预定厚度（例如，大约125-250微米）的铜片形成。虽然其它基底材料可以被使用，铜和其合金由于其高导热性以及在引线框产业中的广泛使用是合适的选择。正如图2的平面图2中所显示的，多个开口形成于引线框140中以定义通过连接杆（例如，150-153）连接的散热器盖（例如，141-149）阵列。正如应了解的，引线框层140中的开口可以通过使用任何所需蚀刻、冲压或机械加工被定义。此外，任何所需连接杆图案可以被使用，只要其提供了足够的机械整体性以允许散热器盖140阵列被一起放置在载体衬底110上和放置在倒装芯片模腔（例如，模具100）内。例如，虽然连接杆151-153被显示为从每个散热器盖141-149的每个角大约对角地延伸以连接相邻散热器盖或相邻外部杆框架150，应了解一个或多个连接杆（未显示）可从每个散热器盖141-149的边垂直地延伸以彼此连接和/或连接外部杆框架150。在任何情况下，连接杆的设计和放置有效地从锯切路径移除了金属，从而增加了锯切的生产量并且延长了锯片的寿命。此外，每个散热片盖的形状可不同于图2中所显示的正方形。
载体衬底平板110包括多个被排列在矩阵阵列中的集成电路管芯121-129，其中载体衬底平板110与散热器盖140的平面阵列对齐地（inregistry with）放置以在较低模塑封装模具100中进行封装模塑。清楚起见，顶部模塑模具/腔在图1中没有被显示，但是当压缩散热器盖140阵列使其与管芯阵列121-129接触的时候会被使用。正如所说明的，每个集成电路管芯121-129附着于载体衬底平板110并且由形成于管芯121-129和载体衬底平板110之间的图案化的底部填充111-119固定。虽然没有被明确地显示，应了解通过使用合适的衬底-管芯互连机制，例如，倒装芯片接合，每个管芯121-129被电连接到载体衬底平板110中的导体。此外，载体衬底平板110上的每个集成电路管芯121-129还包括形成于集成电路管芯的上表面或暴露的表面上的图案化的热界面材料（TIM）层131-139。在所选择的实施例中，TIM层（例如，131-139）可以由一种缓冲导热脂或非固化硅材料形成以最小化管芯和散热器盖141-149之间的热阻，并且当载体衬底平板110和散热器盖140阵列被降入到较低模塑封装模具100中的腔开口102中以进行封装模塑（例如，包括了将液体或粉末模塑化合物分配到腔开口120的腔注塑）的时候，在封装工艺的任何压缩期间保护了管芯免受损害。在其它实施例中，热界面材料或TIM（131-139）可以作为被分配的脂或仍然充当辅助可制作性的缓冲层的带条或膜层被应用于每个散热器（141-149）底面。
正如图3的侧视图3所说明的，平面散热器盖阵列140附着于集成电路管芯（例如，121-123）；该集成电路管芯被管芯附着（例如，111－113）到载体衬底110上以被放置在较低模塑封装模具100内。在制作过程的这一点上，一旦载体衬底平板110被压缩而接触散热器盖阵列140，TIM层（例如，131-133）被放置在每个管芯（例如，121-123）上以提供管芯和相应的散热器盖（例如，141-143）之间的直接热接触。此外，阵列140中的每个散热器盖（例如，141-143）的横向尺寸将决定散热器盖（例如，141-143）与相应的集成电路管芯（例如，121-123）重叠的程度。在所选择的实施例中，每个散热器盖的横向尺寸可以被选择以完全覆盖相应的集成电路管芯的整个上表面。在其它实施例中，散热器的横向尺寸可以实质上等于切单之后的最终封装尺寸。
现在转到图4，图4显示了与集成电路管芯221-223对齐地放置的向上设置的散热器盖240的非平面阵列的透视图4；其中集成电路管芯221-223倒装芯片地安装并且被底部填充（例如，211－213）到被放置在较低模塑封装模具200上的载体衬底210上。所描述的散热器盖阵列240可以通过使用任何所需引线框制作技术被形成。例如，有预定厚度的铜层或其它导热材料层可以被蚀刻、冲压或以其它方式机械加工以形成定义了通过杆251被连接到外部杆框架250的散热器盖（例如，241-243）阵列的开口，并且然后散热器部分可以被向上设置以不与杆共面。同样，任何所需连接杆图案和周界框架可以被使用，只要其提供了足够的机械整体性以允许散热器盖240阵列被一起放置在载体衬底210上和放置在模腔（例如，模具200）内。以这种方式，连接杆的设计和放置有效地从锯切路径移除了金属，从而增加了锯切的生产量并且延长了锯片的寿命。此外，由于杆现在完全被包封于模塑化合物中，在切单期间毛边的形成被最小化，同时仍然使散热器暴露。
在载体衬底210上，集成电路管芯221-223的阵列被倒装芯片地附着并且被底部填充（例如，221-223）以形成芯片221-223和载体衬底平板210之间的互连。此外，通过使用倒装芯片互连方法，每个芯片221-223上的一个或多个凸点可以被电连接到载体衬底平板210中的导体或焊盘（未显示）。为了提高散热，载体衬底平板210上的每个集成电路管芯221-223包括形成于集成电路管芯的上表面或暴露的表面上的图案化的热界面材料（TIM）层231-233。图案化的TIM层231-233可以被形成为提供了优良导热和压缩弹性的预定厚度或体积。例如，被形成为预定厚度小于50-75微米的TIM层231-233将在管芯221-223和散热器盖241-243之间提供优良导热，同时也提供了一个压缩-缓冲层以保护管芯在封装过程期间的任何压缩中免受损害。合适的热界面材料可以是包括缓冲导热脂或非固化硅材料、或缓冲导热可固化硅酮或其它类型的聚合系统的系统以最小化管芯和散热器盖之间的热阻并且保护管芯在封装期间免受损害。
管芯阵列与向上设置/向下设置的散热器盖阵列240的连接在图5中被显示，其中图5说明了通过图案化的TIM层231-233附着于集成电路管芯221-223以被放置在较低模塑封装模具200中的向上设置/向下设置的散热器盖阵列240的侧视图5。以这种方式，一旦载体衬底平板210上的管芯被按压而接触散热器盖阵列240，在每个管芯221-223上的图案化的TIM层231-233提供了管芯和相应的散热器盖241-243之间的直接热接触。正如所描述的，每个散热器盖241-243的横向尺寸完全覆盖了相应的集成电路管芯221-223的整个上表面。此外，向下设置的连接杆251被放置以对齐所需要的锯切刻线。
为了说明散热器盖阵列结构可以如何在压缩模塑过程中被使用以封装多个按矩阵阵列排列在载体衬底上的集成电路管芯的例子，现在参考图6，其中图6显示了各种制作过程步骤的图表描述，其中这些制作过程步骤可以被用于由多个模塑阵列封装来形成热增强倒装芯片集成电路散热盖封装，该模塑阵列封装通过附着和封装衬底阵列部分300、302、306、308和散热器盖阵列部分311形成，以形成带有暴露的散热器盖312的封装衬底阵列325。
正如图6a中所描述的，模塑阵列封装（MAP）载体衬底300被设置为具有多个单一半导体管芯306；该单一半导体芯片被检查并且通过使用倒装芯片凸点（302）或其它合适的芯片附着方法以及底部填充材料（304）按阵列配置附着于载体衬底300。IC管芯306可以是任何类型的集成电路器件，例如，微处理器、数字信号处理器（DSP）、或模拟器件、存储器或执行任何其它类型功能的电路。因此，IC管芯306不被限定于一种特定技术（例如，CMOS）或从任何特定晶圆技术中衍生出的技术。同时，各种不同管芯尺寸可适应本发明所描述的散热器阵列结构。底部填充材料304可以是任何合适的底部填充材料，例如，一种填充的环氧树脂、一种热塑料粘合剂、硅材料等等。这种底部填充材料对本领域所属技术人员是众所周知的。在一些实施例中，可以不使用特殊底部填充材料，并且在封装期间模塑化合物填充了每个芯片下面的空间。IC管芯306也可能通过多个导体（例如，形成于IC管芯306和衬底300上的接触焊盘之间的倒装芯片凸点导体302）与基体载体/芯片标识结构300中的导体电连接。虽然没有描述，倒装芯片凸点导体302可以成行和成列形成以在基体载体300和IC管芯306之间进行电连接。
此外，一个或多个图案化的热界面材料层308可以通过使用缓冲导热脂或非固化硅材料有选择性地在每个管芯306的暴露的表面上形成或应用以最小化管芯和随后附着的散热器盖阵列之间的热阻，并且保护管芯免受压缩相关的损害。
正如图6b中所显示的，单一引线框散热器盖阵列310由导热材料，例如，铜（例如，CDA194铜）或其它铜合金、镍铁合金（例如，合金42）或其它镍合金等等形成。通过将图案化的热界面材料层308用作导热粘合剂层，所描述的散热器盖阵列310和所述多个集成电路管芯306被对齐地放置并且附着于多个集成电路管芯306，其中TIM材料在封装期间被使用以固定散热器阵列，直到盖阵列永久附着于管芯。在所选择的实施例中，散热器盖阵列310可以被形成为向上设置的散热器盖312的非平面阵列，散热器盖312的阵列被放置在阵列中以与集成电路管芯306对齐并且附着于杆311以及通过使用连接杆311附着于外部杆框架（未显示）。在其它实施例（未显示）中，散热器盖阵列310可以被形成为通过连接杆连接在一起的散热器盖的平面阵列。在其它实施例中，热界面材料（TIM）308可以是一个膜或带条并且被应用于阵列310中每个散热器的底面，其中然后当散热器阵列310被对齐并且被对准地放置的时候，TIM和集成电路管芯306的顶部接触。
随后（正如图6c中所显示的），组装好的散热器盖阵列310和MAP载体衬底301被放置在封装模塑系统320、322中，并且用模塑化合物321封装以便使（向上设置的）散热器盖312的上表面暴露出来。例如，组装好的散热器盖阵列310和MAP载体衬底301可以在下模塑模具320和一个上模塑模具322之间被压缩以便上模塑模具322压住散热器盖312的上表面。或者，上模塑模具322和散热器盖阵列310可以被附着（例如，通过真空）并且一起压住下模塑模具320和组装好的散热器盖阵列310。结果，图案化的TIM层308可以被压缩并且横向延伸以形成覆盖了整个管芯306的压缩的TIM层309。衬底载体、管芯和散热器组件然后通过使用任何所需技术（例如，腔注塑或压缩模塑）被模塑化合物321封装。由于上模塑模具322压住阵列310的向上设置的散热器盖312，模塑化合物材料321被固化以封装向下设置部分和散热器阵列310的杆311以及集成电路管芯306的暴露表面、底部填充304和载体衬底300。而当上模塑模具322被移除的时候，向上设置的散热器盖312被暴露并且没有被模塑化合物材料覆盖，从而提供了至外部散热器的最优散热转移或界面。
为了保证集成电路管芯306与散热器盖阵列310通过TIM层308、312进行直接热接触，形成于压缩的下和上模塑模具320、322之间的模腔的垂直或高度尺寸被控制或被指定为等于、或稍微小于MAP载体衬底组件301（包括载体衬底300、被底部填充304包围的管芯-衬底互连高度、集成电路管芯306、以及TIM层308）的组合高度。并且通过使用可压缩的或缓冲TIM层308，运用向下的模塑夹力倚着散热器阵列310压缩上模塑模具引起集成电路管芯306直接热接触散热器盖312，而不施加会损害或破坏集成电路管芯306的过量压力，并且也不施加会允许模塑化合物在向上散热器盖312的顶面上渗出或形成毛边（flash）的不足的压力。使用可压缩或缓冲TIM层308也有效地吸收了MAP载体衬底组件301的组件302、304、306中的厚度变化；当在有固定模腔尺寸的封装模塑系统320、322中执行封装模塑的时候，该厚度变化会产生问题。归因于载体衬底300的厚度变化也可通过使用有腔开口的上模塑模具（未显示）被解决；该腔开口是由可以直接倚着载体衬底300的上表面被按压的外部密封环定义的。用于适应系统中组件的高度变化的另一种替代方法是当使用腔注塑的时候使用倚着上模塑模具的保护模塑膜。这个大约50微米厚的基于聚合物的膜保护了上模塑模具并且使模塑阵列从模塑模具上轻松释放出来。这种膜将提供一定水平的缓冲以添加到TIM材料提供的缓冲，进一步降低了对集成电路306的损害的风险。
后续处理步骤可以包括模塑化合物的后模塑固化、激光标记步骤、载体衬底上球栅阵列导体的形成、封装切单成独立元件、清洗和检查。例如，图6d显示了在从封装模塑系统和后模塑固化步骤移除之后由封装散热器盖阵列310和MAP载体衬底301形成的衬底阵列325。此外，球栅阵列导体326-328被显示为形成于衬底阵列325的暴露表面以通过在载体衬底300内形成的导电迹线（未显示）与集成电路管芯306电连接。
在模塑化合物312压缩模塑和初始固化之后，沿着锯切割线或由向下设置的连接杆311和载体衬底300的非电路部分定义的刻线格，独立封装器件被锯或激光或应用于模塑阵列封装的其它切割设备330切单。正如图6e中所说明的，锯切割线330被放置以通过穿过模塑化合物和向下设置的连接杆311被切断以分开独立封装管芯306，其中连接杆311被形成和放置以最小化源自锯切路径的散热器材料，从而增加了生产量并且延长了锯片的寿命。根据锯切割线的宽度，独立封装可能将模塑化合物角部区域329保留在每个切单的封装的上外围侧末端处，从而覆盖了暴露的向下设置的连接杆311以防止分层和减少切割杆沿上的毛边。
切单之后，每个切单的器件内的集成电路散热器盖312将提供外部散热表面以通过TIM层309和散热器盖312有效地和直接地从封装集成电路306中传导出去热量。在暴露的集成电路散热器盖312内的最后金属涂层（finish）可以被镀上镍或镍钯或其它被用于提高粘附以及提供合适的标记表面和审美价值的常用涂层。
正如本发明所描述的，集成电路散热器盖阵列作为nxm（n>1,m≥1）阵列或低分布矩阵、可以通过通常被用于制作引线框的方式（蚀刻、冲压、模压或机械加工，之后进行最终涂层的镀覆）被制作的低成本散热器盖被提供。低分布散热器盖阵列可以被一起应用于直接附着于一个用低压压缩模塑法封装的IC管芯的相应阵列。由于散热器盖暴露于上侧封装表面上的周围环境，集成电路封装有用于从IC管芯上散热的充分表面区域。有了改进的热性能，集成电路封装的功率容量可以被提高，和/或半导体封装的温度可以被降低。因此，所选择的实施例提供了一种使用当前半导体组件设备可以被实施的可靠的和热增强集成电路封装的批量生产的廉价方法。
现在转到图7，图7根据本发明所选择的实施例，说明了使用散热器盖阵列描述制作热增强集成电路散热器盖封装的过程的例子流程图序列400。该过程开始于步骤402，其中衬底阵列通过使用倒装芯片附着方法将阵列或矩阵图案中的多个集成电路管芯附着于模塑阵列封装（MAP）衬底，例如，球栅阵列(BGA)衬底。在步骤404，有多个形成于平面或向上设置的层中的散热器盖阵列与衬底阵列对齐地被组装以便通过有最大厚度的图案化的、导热缓冲层与顶部管芯表面直接热接触。被组装的衬底/散热器盖阵列然后被插入下模腔工具（步骤406），并且当模腔被填充到但并未超过所述多个盖的模塑化合物的时候，将上模腔工具压住所述多个盖（步骤408）。模塑化合物可以通过熔化模塑化合物材料或分配一种液体模塑化合物或在模具腔中注射模塑化合物被提供。固化的模塑化合物在盖阵列和衬底阵列上的集成电路管芯之间提供了永久附着，形成了加盖的衬底阵列。一旦初始固化，模塑按压可以被打开以移除加盖的衬底阵列（步骤410）。在这一点上，虽然焊球导体不是连接盘网格阵列（LGA）表面安装封装应用程序所需的，焊球导体可以附着于衬底（步骤412）。最后，加盖的衬底阵列可以被切单成独立集成电路封装（步骤414），例如，通过使用锯切。在这一点上，独立集成电路封装可以被放置在托盘中并且为了检查和测试被传送。
目前应了解本申请提供了一种制作多个集成电路封装的方法。在所公开的方法中，提供包括多个集成电路管芯的衬底阵列，每个集成电路管芯都有附着于所述衬底阵列的第一表面的第一表面以及在其上形成了导热界面层的第二表面。在所选择的实施例中，所述导热界面层可以通过将缓冲图案化层、导热脂或非固化硅材料应用于每个集成电路管芯的所述第二表面形成。此外，提供引线框散热器盖阵列，该阵列包括多个有通过连接杆被连接在一起的平面上盖表面的散热器盖以定义相邻散热器盖之间的一个或多个开口，该开口定义了每个散热器盖周围的切单区域。在所选择的实施例中，所述散热器阵列可以通过有选择性地蚀刻、机械加工或冲压金属层以定义带有形成于单一平面层中的连接杆和所述多个散热器盖的引线框散热器盖阵列被提供。在其它实施例中，所述散热器盖阵列可以作为多个被多个向下设置的引线指状杆连接在一起以定义相邻散热器盖之间的所述一个或多个开口的向上设置的散热器盖被提供。每个向上设置的散热器盖可以具有合适尺寸以通过在其上形成的所述导热界面层与相应的集成电路管芯接触。所述引线框散热器盖阵列通过按压所述引线框散热器盖阵列使其与形成于每个集成电路管芯上的所述导热界面层接触将所述散热器盖阵列附着于所述衬底阵列上的IC芯片以使它们之间直接接触。在所选择的实施例中，所述引线框散热器盖阵列通过如下处理被附着：将上模腔工具压住下模腔工具和压住所述引线框散热器盖阵列的所述平面上盖表面以形成位于所述上下模腔之间的模腔并且附着所述散热器盖阵列使其与形成于每个集成电路管芯上的所述导热界面层接触。在将所述下模腔工具压住所述上模腔工具之前，内表面可以衬以聚合物膜以防止模塑化合物侵入所述散热器盖阵列的所述顶面并且通过吸收盖/集成电路管芯/载体衬底组件高度上的任何厚度可变性以帮助适应制作容差。一旦被附着，所述多个集成电路管芯和所述散热器盖阵列被模塑化合物封装，除了所述多个散热器盖的所述平面上盖表面和所述衬底阵列的底面之外。所述模塑化合物然后被固化，导致了模塑封装阵列，每个都有被暴露于第一侧面上的所述散热器盖阵列的一部分和被暴露于第二侧面上的散热器盖阵列的平面上盖表面。模塑封装过程可能包括在通过加热或固化所述模塑化合物之后用一种模塑化合物填充除了所述多个散热器盖的所述平面上盖表面的所述模腔。随后，球栅阵列可以形成于所述衬底阵列的所述暴露的表面上以与形成于所述衬底阵列中的导电迹线电连接，和/或所述模塑封装阵列可以被切单成多个集成电路封装。
在另一种形式中，提供了半导体封装和相关的制作方法。正如所公开的，半导体封装包括有第一和第二表面附着于有第一和第二表面的管芯的衬底，其中所述管芯的所述第一表面被倒装芯片地接合到所述衬底的所述第一表面。也可以有焊球阵列附着于所述衬底的所述第二表面以通过形成于所述衬底中的导电迹线与所述管芯电连接。所述半导体封装还包括被形成为覆盖所述管芯的所述第二表面的导热界面层，其中所述导热界面层可以被形成为缓冲图案化层、导热脂或非固化硅材料。此外，所述半导体封装包括是由铜、镍或其合金导热层形成的散热器盖。正如被形成的，所述散热器盖有暴露的散热表面层，所述散热表面层有至少与所述管芯的所述第二表面一样大的热接触表面以及多个从所述散热表面层横向延伸的连接杆的散热器，其中所述散热表面层被放置以接触所述导热界面层，并且被放置为与所述衬底分开以定义密封模塑化合物材料放置在其中以永久附着所述衬底、芯片和散热器盖的密封模塑区域。在所选择的实施例中，所述连接杆横向延伸以与所述暴露的散热表面层共面，而在其它实施例中，所述连接杆由于不与所述暴露的散热表面层共面的向下设置的连接杆横向延伸。因此，选择的实施例形成了被所述密封剂模塑化合物材料嵌入和包围的连接杆，除了所述半导体封装的外围侧末端之外。
在另一种形式中，公开了一种制作半导体封装的方法。作为初始步骤，使用倒装芯片接合将多个集成电路管芯附着于模塑阵列封装衬底阵列以启用所述衬底阵列中的每个集成电路管芯和导体之间的电连接。由非层压导热材料形成的散热器盖阵列也被提供以定义多个与所述多个集成电路管芯对齐放置的散热器盖，其中每个散热器盖包括暴露的散热表面层和多个从所述暴露的散热表面层横向延伸的连接杆。在所选择的实施例中，所述散热器盖阵列是通过有选择性地蚀刻、机械加工或冲压金属层被形成以定义带有形成于单一平面层中的连接杆和所述多个散热器盖的平面引线框散热器盖阵列。此外，热界面材料层形成于每个所述多个集成电路管芯的暴露的表面上或每个暴露的散热表面层的底面上。通过使用所述热界面材料层放置或按压所述散热器盖阵列使其与所述多个集成电路管芯热接触，要封装的区域可以在所述暴露的散热表面层和所述衬底阵列之间被定义。在固化所述封装化合物材料以封装所述多个集成电路管芯以及密封和永久附着所述衬底阵列和散热器盖阵列之后，所述封装区域可以用封装模塑化合物材料填充，而不用封装模塑化合物材料覆盖所述暴露的散热表面层。结果，形成模塑封装阵列，每个模塑封装都有被暴露于第一侧面上的所述散热器盖阵列的一部分和被暴露于第二侧面上的所述散热器盖阵列的一部分。最后，模塑封装阵列可以被切单成多个集成电路封装。
虽然本发明所公开的描述示例实施例指向各种封装组件及其制作方法，本发明不一定限定于说明了适用于各种各样封装过程和/或器件的本发明的发明方面的例子实施例。因此，上面所公开的特定实施例仅仅是说明性的而不应该被认为是对本发明的限定，因为本发明可以以包括对受益于本发明所教导的内容的本领域技术人员很明显的不同的但等同的方式被修改和实施。例如，本发明的方法可以使用除了本发明明确陈述的材料之外的材料被应用。此外，制作步骤可以以一种替代顺序而不是所提到的顺序被执行。同时，附图并未显示封装的各种元件之间的所有连接细节，因为应了解引线、通孔、接合物、电路迹线和其它连接方式可以被用于实现任何电连接。因此，前述描述不旨在将本发明限定于陈述的特定形式，相反，旨在涵盖在所述附着权利要求中定义的可以包含在本发明所述精神和范围内的这种替代物、修改以及等同物，以便那些本领域所属技术人员应该理解在不脱离本发明的最宽范形式的精神及范围的情况下可以做出各种修改、替换和改变。
好处、其它优点以及问题的解决方案在上述已被关于特定实施例描述。然而，可能引起任何好处、优点或解决方案发生或变得更加显著的好处、优点、问题的解决方法以及其它元件不被解释为任何或所有权利要求的关键的、必需的、或本质特征或元件。正如本发明所使用的，术语“包括”或其任何其它变化形式旨在涵盖非排他性包含，例如包括一系列元件的过程、方法、物件、或装置不仅仅包括这些元件但可能包括其它没有明确列出的或是这个过程、方法、物件、或装置固有的元件。

Claims (20)

1.一种制作多个集成电路封装的方法，包括：
提供包括多个集成电路管芯的衬底阵列，每个集成电路管芯都有附着于所述衬底阵列的第一表面的第一表面以及在其上形成了导热界面层的第二表面；
提供散热器盖阵列，所述散热器盖阵列包括多个有通过连接杆被连接在一起的平面上盖表面的散热器盖以定义相邻散热器盖之间的一个或多个开口，所述开口定义了每个散热器盖周围的切单区域；
通过按压所述散热器盖阵列使其与形成于每个集成电路管芯上的所述导热界面层接触将所述散热器盖阵列附着于所述衬底阵列上以使它们之间直接接触；
用密封剂封装所述多个集成电路管芯和所述散热器盖阵列，其中所述多个散热器盖的所述上平面上盖表面被暴露出来；以及
固化所述密封剂以形成模塑封装阵列，每个模塑封装都有被暴露于第一侧面上的所述衬底的一部分和被暴露于第二侧面上的散热器盖的平面上盖表面。
2.根据权利要求1所述的方法，还包括：
将所述模塑封装阵列切单成多个集成电路封装。
3.根据权利要求1所述的方法，还包括：
在所述衬底阵列的所述第二表面上形成多个与形成于所述衬底阵列中的导电迹线电连接的球栅阵列。
4.根据权利要求1所述的方法，还包括：通过将导热缓冲粘合层或缓冲图案化层、导热脂或非固化硅材料应用于每个集成电路管芯的所述第二表面，形成所述导热界面层。
5.根据权利要求1所述的方法，其中提供所述散热器盖阵列包括：有选择性地蚀刻、机械加工或冲压金属层以定义带有形成于单一平面层中的连接杆和所述多个散热器盖的平面引线框散热器盖阵列。
6.根据权利要求1所述的方法，其中提供所述散热器盖阵列包括：提供多个被多个向下设置的引线指状杆连接在一起以定义相邻散热器盖之间的所述一个或多个开口的向上设置的散热器盖。
7.根据权利要求1所述的方法，其中将所述散热器盖阵列附着于所述衬底阵列包括：将上模腔工具压住下模腔工具和所述散热器盖阵列的所述平面上盖表面，以形成位于所述上下模腔之间的模腔并且附着所述散热器盖阵列使其与形成于每个集成电路管芯上的所述导热界面层接触。
8.根据权利要求7所述的方法,还包括：在将所述上模腔工具压住所述下模腔工具之前用聚合物膜衬于所述上模腔的内表面。
9.根据权利要求7所述的方法，其中用密封剂封装所述多个集成电路管芯和所述散热器盖阵列包括：
用密封剂填充除了所述多个散热器盖的所述平面上盖表面之外的所述模腔；以及
夹住所述上下模腔工具。
10.根据权利要求1所述的方法，其中提供所述散热器盖阵列包括：提供所述多个向上设置的散热器盖，每个都具有合适尺寸以通过在其上形成的所述导热界面层与相应的集成电路管芯接触。
11.一种半导体封装，包括：
有第一和第二表面的衬底；
有第一和第二表面的管芯，其中所述管芯的所述第一表面被倒装芯片地接合到所述衬底的所述第一表面；
被形成为覆盖所述管芯的所述第二表面的导热界面层；以及
包括暴露的散热表面层和多个从所述散热表面层横向延伸的连接杆的散热器盖，其中所述散热表面层接触所述导热界面层，并且被放置为与所述衬底分开以定义密封模塑化合物材料放置在其中以永久附着所述衬底、芯片和散热器盖的密封模塑区域。
12.根据权利要求11所述的半导体封装，其中所述多个连接杆横向延伸以与所述暴露的散热表面层共面。
13.根据权利要求11所述的半导体封装，其中所述多个连接杆作为不与所述暴露的散热表面层共面的向下设置的连接杆横向延伸。
14.根据权利要求11所述的半导体封装，其中所述散热器盖是由铜、镍或其合金的导热层形成的。
15.根据权利要求11所述的半导体封装，其中所述暴露的散热表面层有至少与所述管芯的所述第二表面一样大的热接触表面。
16.根据权利要求11所述的半导体封装，还包括附着于所述衬底的所述第二表面的焊球阵列以通过形成于所述衬底中的导电迹线与所述管芯电连接。
17.根据权利要求11所述的半导体封装，其中所述多个连接杆被所述密封剂模塑化合物材料嵌入和包围，除了所述半导体封装的外围侧末端之外。
18.一种制作半导体封装的方法，包括：
使用倒装芯片接合将多个集成电路管芯附着于模塑阵列封装衬底阵列以启用所述衬底阵列中的每个集成电路管芯和导体之间的电连接；
提供由非层压导热材料形成的散热器盖阵列以定义多个与所述多个集成电路管芯对齐放置的散热器盖，其中每个散热器盖包括暴露的散热表面层和多个从所述暴露的散热表面层横向延伸的连接杆；
在所述多个集成电路管芯中的每一个的暴露的表面上或在每个暴露的散热表面层的底面上形成热界面材料层；
使用所述热界面材料层按压所述散热器盖阵列使其与所述多个集成电路管芯热接触以在所述暴露的散热表面层和所述衬底阵列之间定义封装模腔区域；
用封装模塑化合物材料填充所述封装模塑化合物区域，而不用封装模塑化合物材料覆盖所述暴露的散热表面层；
固化所述封装模腔区域内的所述封装化合物材料以封装所述多个集成电路管芯以及密封所述衬底阵列和散热器盖阵列，导致了模塑封装阵列，每个模塑封装都有被暴露于第一侧面上的所述散热器盖阵列的一部分。
19.根据权利要求18所述的方法，还包括：
将所述模塑封装阵列切单成多个集成电路封装。
20.根据权利要求18所述的方法，其中所述散热盖阵列包括每个暴露的散热表面层和横向延伸并且与所述暴露的散热表面层形成于单一平面层内的连接杆。
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