CN103681314A - 改善晶体内部微小杂质析出的热处理工艺 - Google Patents
改善晶体内部微小杂质析出的热处理工艺 Download PDFInfo
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- CN103681314A CN103681314A CN201310659258.8A CN201310659258A CN103681314A CN 103681314 A CN103681314 A CN 103681314A CN 201310659258 A CN201310659258 A CN 201310659258A CN 103681314 A CN103681314 A CN 103681314A
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- heating processing
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 43
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 239000012535 impurity Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 238000001556 precipitation Methods 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 13
- 230000006911 nucleation Effects 0.000 abstract description 10
- 238000010899 nucleation Methods 0.000 abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 238000004904 shortening Methods 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 4
- 230000007547 defect Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310659258.8A CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Applications Claiming Priority (1)
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CN201310659258.8A CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Publications (2)
Publication Number | Publication Date |
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CN103681314A true CN103681314A (zh) | 2014-03-26 |
CN103681314B CN103681314B (zh) | 2018-02-02 |
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CN201310659258.8A Active CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Country Status (1)
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CN (1) | CN103681314B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1050792A (zh) * | 1990-08-20 | 1991-04-17 | 河北工学院 | 硅半导体器件用硅片的缺陷控制工艺 |
CN1846017A (zh) * | 2003-07-08 | 2006-10-11 | Memc电子材料有限公司 | 用于制备稳定的理想的氧沉淀硅片的方法 |
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
WO2013082831A1 (zh) * | 2011-12-06 | 2013-06-13 | 有研半导体材料股份有限公司 | 使用高温热处理的300mm硅抛光片制造工艺 |
-
2013
- 2013-12-09 CN CN201310659258.8A patent/CN103681314B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1050792A (zh) * | 1990-08-20 | 1991-04-17 | 河北工学院 | 硅半导体器件用硅片的缺陷控制工艺 |
CN1846017A (zh) * | 2003-07-08 | 2006-10-11 | Memc电子材料有限公司 | 用于制备稳定的理想的氧沉淀硅片的方法 |
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
WO2013082831A1 (zh) * | 2011-12-06 | 2013-06-13 | 有研半导体材料股份有限公司 | 使用高温热处理的300mm硅抛光片制造工艺 |
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CN103681314B (zh) | 2018-02-02 |
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Effective date of registration: 20191220 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Patentee before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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