CN103635035A - 电路板及其制作方法 - Google Patents
电路板及其制作方法 Download PDFInfo
- Publication number
- CN103635035A CN103635035A CN201210312000.6A CN201210312000A CN103635035A CN 103635035 A CN103635035 A CN 103635035A CN 201210312000 A CN201210312000 A CN 201210312000A CN 103635035 A CN103635035 A CN 103635035A
- Authority
- CN
- China
- Prior art keywords
- layer
- dielectric layer
- metal seed
- circuit board
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 108
- 239000002184 metal Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000004913 activation Effects 0.000 claims abstract description 31
- 239000003054 catalyst Substances 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 231
- 238000003466 welding Methods 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- 239000011133 lead Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- GQDHEYWVLBJKBA-UHFFFAOYSA-H copper(ii) phosphate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GQDHEYWVLBJKBA-UHFFFAOYSA-H 0.000 claims description 4
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 claims description 4
- HFORGINKVIYNFC-UHFFFAOYSA-N copper;oxochromium Chemical compound [Cr].[Cu]=O HFORGINKVIYNFC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 210000004877 mucosa Anatomy 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000011536 re-plating Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 evanohm Chemical compound 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
电路板 | 100 |
电路基板 | 110 |
基底 | 111 |
导电垫 | 112 |
介电层 | 120 |
第一金属种子层 | 130 |
电镀光致抗蚀剂层 | 140 |
线路部分 | 141 |
线路开口 | 142 |
盲孔 | 151 |
活化金属层 | 152 |
第二金属种子层 | 160 |
电连接体 | 170 |
顶面 | 171 |
底面 | 172 |
保护层 | 173 |
导电线路 | 180 |
防焊层 | 190 |
开孔 | 191 |
焊接材料 | 192 |
Claims (18)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210312000.6A CN103635035B (zh) | 2012-08-29 | 2012-08-29 | 电路板及其制作方法 |
TW101131674A TWI465160B (zh) | 2012-08-29 | 2012-08-31 | 電路板的製作方法 |
US13/947,114 US9439281B2 (en) | 2012-08-29 | 2013-07-22 | Method for manufacturing printed circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210312000.6A CN103635035B (zh) | 2012-08-29 | 2012-08-29 | 电路板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103635035A true CN103635035A (zh) | 2014-03-12 |
CN103635035B CN103635035B (zh) | 2016-11-09 |
Family
ID=50185852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210312000.6A Active CN103635035B (zh) | 2012-08-29 | 2012-08-29 | 电路板及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9439281B2 (zh) |
CN (1) | CN103635035B (zh) |
TW (1) | TWI465160B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140206A (zh) * | 2014-05-26 | 2015-12-09 | 旭德科技股份有限公司 | 基板结构及其制作方法 |
US9468095B1 (en) | 2015-10-28 | 2016-10-11 | Industrial Technology Research Institute | Manufacturing method of multilayer wiring and multilayer wiring structure |
CN107210260A (zh) * | 2015-02-16 | 2017-09-26 | 英特尔公司 | 微电子内建层及其形成方法 |
CN111970849A (zh) * | 2019-05-20 | 2020-11-20 | 鹏鼎控股(深圳)股份有限公司 | 电路板及其制作方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI551199B (zh) | 2014-04-16 | 2016-09-21 | 矽品精密工業股份有限公司 | 具電性連接結構之基板及其製法 |
TWI607678B (zh) * | 2015-01-06 | 2017-12-01 | 欣興電子股份有限公司 | 中介層結構及其製作方法 |
US9859159B2 (en) | 2015-03-10 | 2018-01-02 | Unimicron Technology Corp. | Interconnection structure and manufacturing method thereof |
US9576918B2 (en) * | 2015-05-20 | 2017-02-21 | Intel IP Corporation | Conductive paths through dielectric with a high aspect ratio for semiconductor devices |
JP6625872B2 (ja) * | 2015-11-25 | 2019-12-25 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
US10039185B2 (en) * | 2016-04-15 | 2018-07-31 | Kinsus Interconnect Technology Corp. | Manufacturing method of landless multilayer circuit board |
TWI740767B (zh) | 2021-01-07 | 2021-09-21 | 欣興電子股份有限公司 | 線路板及其製作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020145203A1 (en) * | 2001-04-05 | 2002-10-10 | International Business Machines Corporation | Method and structure for economical high density chip carrier |
CN1427469A (zh) * | 2001-12-20 | 2003-07-02 | 全懋精密科技股份有限公司 | 芯片封装基板电性接触垫的电镀镍/金制作方法与结构 |
US20040060970A1 (en) * | 2002-09-30 | 2004-04-01 | Moon Peter K. | Under bump metallurgy for Lead-Tin bump over copper pad |
CN1972570A (zh) * | 2005-11-25 | 2007-05-30 | 全懋精密科技股份有限公司 | 电路板形成导电结构的制程 |
CN1980530A (zh) * | 2005-11-30 | 2007-06-13 | 全懋精密科技股份有限公司 | 电路板导电凸块结构的制法 |
TW201110842A (en) * | 2009-09-15 | 2011-03-16 | Unimicron Technology Corp | Solder pad structure for printed circuit boards and fabrication method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI261329B (en) * | 2005-03-09 | 2006-09-01 | Phoenix Prec Technology Corp | Conductive bump structure of circuit board and method for fabricating the same |
TWI287956B (en) * | 2005-04-11 | 2007-10-01 | Phoenix Prec Technology Corp | Conducting bump structure of circuit board and fabricating method thereof |
-
2012
- 2012-08-29 CN CN201210312000.6A patent/CN103635035B/zh active Active
- 2012-08-31 TW TW101131674A patent/TWI465160B/zh active
-
2013
- 2013-07-22 US US13/947,114 patent/US9439281B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020145203A1 (en) * | 2001-04-05 | 2002-10-10 | International Business Machines Corporation | Method and structure for economical high density chip carrier |
CN1427469A (zh) * | 2001-12-20 | 2003-07-02 | 全懋精密科技股份有限公司 | 芯片封装基板电性接触垫的电镀镍/金制作方法与结构 |
US20040060970A1 (en) * | 2002-09-30 | 2004-04-01 | Moon Peter K. | Under bump metallurgy for Lead-Tin bump over copper pad |
CN1972570A (zh) * | 2005-11-25 | 2007-05-30 | 全懋精密科技股份有限公司 | 电路板形成导电结构的制程 |
CN1980530A (zh) * | 2005-11-30 | 2007-06-13 | 全懋精密科技股份有限公司 | 电路板导电凸块结构的制法 |
TW201110842A (en) * | 2009-09-15 | 2011-03-16 | Unimicron Technology Corp | Solder pad structure for printed circuit boards and fabrication method thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140206A (zh) * | 2014-05-26 | 2015-12-09 | 旭德科技股份有限公司 | 基板结构及其制作方法 |
CN105140206B (zh) * | 2014-05-26 | 2018-05-25 | 旭德科技股份有限公司 | 基板结构及其制作方法 |
CN107210260A (zh) * | 2015-02-16 | 2017-09-26 | 英特尔公司 | 微电子内建层及其形成方法 |
US9468095B1 (en) | 2015-10-28 | 2016-10-11 | Industrial Technology Research Institute | Manufacturing method of multilayer wiring and multilayer wiring structure |
CN111970849A (zh) * | 2019-05-20 | 2020-11-20 | 鹏鼎控股(深圳)股份有限公司 | 电路板及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US9439281B2 (en) | 2016-09-06 |
TW201410088A (zh) | 2014-03-01 |
US20140060902A1 (en) | 2014-03-06 |
TWI465160B (zh) | 2014-12-11 |
CN103635035B (zh) | 2016-11-09 |
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Effective date of registration: 20161128 Address after: No. 18, Tengfei Road, Qinhuangdao Economic & Technological Development Zone, Hebei, China Patentee after: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee after: Zhen Ding Technology Co.,Ltd. Address before: 066000 Qinhuangdao economic and Technological Development Zone, Hebei Tengfei Road, No. 18 Patentee before: HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. |
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Effective date of registration: 20220713 Address after: 518105 area B, Room 403, block B, Rongchao Binhai building, No. 2021, haixiu Road, n26 District, Haiwang community, Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Liding semiconductor technology (Shenzhen) Co.,Ltd. Patentee after: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee after: Zhen Ding Technology Co.,Ltd. Address before: No.18, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province 066004 Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. |
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Effective date of registration: 20240226 Address after: SL11, No. 8 Langdong Road, Yanchuan Community, Yanluo Street, Bao'an District, Shenzhen City, Guangdong Province, 518105 Patentee after: Liding semiconductor technology (Shenzhen) Co.,Ltd. Country or region after: China Patentee after: Liding semiconductor technology Qinhuangdao Co.,Ltd. Patentee after: Zhen Ding Technology Co.,Ltd. Country or region after: Taiwan, China Address before: 518105 area B, Room 403, block B, Rongchao Binhai building, No. 2021, haixiu Road, n26 District, Haiwang community, Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Liding semiconductor technology (Shenzhen) Co.,Ltd. Country or region before: China Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. Country or region before: Taiwan, China |
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