CN103633233B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103633233B
CN103633233B CN201310364631.7A CN201310364631A CN103633233B CN 103633233 B CN103633233 B CN 103633233B CN 201310364631 A CN201310364631 A CN 201310364631A CN 103633233 B CN103633233 B CN 103633233B
Authority
CN
China
Prior art keywords
layer
light emitting
electrode
semiconductor layer
conductive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310364631.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103633233A (zh
Inventor
丁焕熙
金昭廷
金贤珠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120090679A external-priority patent/KR101946919B1/ko
Priority claimed from KR1020120096911A external-priority patent/KR101956096B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103633233A publication Critical patent/CN103633233A/zh
Application granted granted Critical
Publication of CN103633233B publication Critical patent/CN103633233B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201310364631.7A 2012-08-20 2013-08-20 发光器件 Active CN103633233B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020120090679A KR101946919B1 (ko) 2012-08-20 2012-08-20 발광소자
KR10-2012-0090679 2012-08-20
KR10-2012-0096911 2012-09-03
KR1020120096911A KR101956096B1 (ko) 2012-09-03 2012-09-03 발광소자

Publications (2)

Publication Number Publication Date
CN103633233A CN103633233A (zh) 2014-03-12
CN103633233B true CN103633233B (zh) 2017-12-05

Family

ID=48998517

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310364631.7A Active CN103633233B (zh) 2012-08-20 2013-08-20 发光器件

Country Status (4)

Country Link
US (1) US9653667B2 (enExample)
EP (1) EP2701212B1 (enExample)
JP (1) JP6239311B2 (enExample)
CN (1) CN103633233B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
JP6004265B2 (ja) * 2012-09-28 2016-10-05 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2016134423A (ja) * 2015-01-16 2016-07-25 株式会社東芝 半導体発光素子、発光装置、および半導体発光素子の製造方法
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
KR102351775B1 (ko) * 2015-11-18 2022-01-14 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 화상 형성 장치 및 이에 포함되는 발광 소자
CN105702827B (zh) * 2016-02-04 2019-01-18 易美芯光（北京）科技有限公司 一种新型垂直结构芯片及其制备方法
CN105702818B (zh) * 2016-02-04 2019-01-01 易美芯光（北京）科技有限公司 一种垂直结构芯片及其制备方法
JPWO2017154975A1 (ja) * 2016-03-08 2019-01-24 アルパッド株式会社 半導体発光装置
TWI584491B (zh) * 2016-11-03 2017-05-21 友達光電股份有限公司 發光裝置與其製作方法
WO2019194618A1 (ko) 2018-04-05 2019-10-10 엘지이노텍 주식회사 반도체 소자 패키지
KR102737506B1 (ko) * 2019-03-18 2024-12-05 삼성전자주식회사 반도체 발광소자 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102232250A (zh) * 2008-10-01 2011-11-02 三星Led株式会社 使用液晶聚合物的发光二极管封装件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
WO2010114250A2 (en) * 2009-03-31 2010-10-07 Seoul Semiconductor Co., Ltd. Light emitting device having plurality of light emitting cells and method of fabricating the same
KR101007133B1 (ko) * 2009-06-08 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999733B1 (ko) 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5101645B2 (ja) * 2010-02-24 2012-12-19 株式会社東芝 半導体発光装置
KR101039879B1 (ko) * 2010-04-12 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5356312B2 (ja) * 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置
KR101154709B1 (ko) * 2010-07-28 2012-06-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101114191B1 (ko) * 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
KR101707118B1 (ko) * 2010-10-19 2017-02-15 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
KR101746002B1 (ko) * 2010-11-15 2017-06-12 엘지이노텍 주식회사 발광소자
KR101830719B1 (ko) * 2011-09-01 2018-02-21 엘지이노텍 주식회사 발광 소자
KR101946914B1 (ko) * 2012-06-08 2019-02-12 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
KR101956101B1 (ko) * 2012-09-06 2019-03-11 엘지이노텍 주식회사 발광소자
EP2755244B1 (en) * 2013-01-10 2018-08-15 LG Innotek Co., Ltd. Light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102232250A (zh) * 2008-10-01 2011-11-02 三星Led株式会社 使用液晶聚合物的发光二极管封装件

Also Published As

Publication number Publication date
EP2701212A3 (en) 2016-04-27
CN103633233A (zh) 2014-03-12
EP2701212A2 (en) 2014-02-26
EP2701212B1 (en) 2020-06-17
JP6239311B2 (ja) 2017-11-29
US20140048839A1 (en) 2014-02-20
US9653667B2 (en) 2017-05-16
JP2014039039A (ja) 2014-02-27

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TR01 Transfer of patent right

Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address