JP2014039039A - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP2014039039A JP2014039039A JP2013169421A JP2013169421A JP2014039039A JP 2014039039 A JP2014039039 A JP 2014039039A JP 2013169421 A JP2013169421 A JP 2013169421A JP 2013169421 A JP2013169421 A JP 2013169421A JP 2014039039 A JP2014039039 A JP 2014039039A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 262
- 229910052751 metal Inorganic materials 0.000 claims description 157
- 239000002184 metal Substances 0.000 claims description 157
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 901
- 238000000034 method Methods 0.000 description 43
- 229910052759 nickel Inorganic materials 0.000 description 37
- 229910052719 titanium Inorganic materials 0.000 description 37
- 239000000758 substrate Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 32
- 229910052802 copper Inorganic materials 0.000 description 31
- 229910052721 tungsten Inorganic materials 0.000 description 31
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 30
- 229910052804 chromium Inorganic materials 0.000 description 29
- 230000008569 process Effects 0.000 description 26
- 229910052697 platinum Inorganic materials 0.000 description 25
- 229910052720 vanadium Inorganic materials 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 229910052737 gold Inorganic materials 0.000 description 20
- 229910052750 molybdenum Inorganic materials 0.000 description 20
- 229910052725 zinc Inorganic materials 0.000 description 19
- 239000011701 zinc Substances 0.000 description 19
- 238000002955 isolation Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 16
- 239000011787 zinc oxide Substances 0.000 description 16
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 15
- 229910017083 AlN Inorganic materials 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 229910010413 TiO 2 Inorganic materials 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 229960001296 zinc oxide Drugs 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- -1 Indium-Aluminum-Zinc- Chemical compound 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910002668 Pd-Cu Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】本発明に従う発光素子は、第1導電型半導体層、前記第1導電型半導体層の下に活性層、前記活性層の下に第2導電型半導体層を含む発光構造物、前記第1導電型半導体層に電気的に連結された第1電極、前記第2導電型半導体層に電気的に連結された第2電極、前記発光構造物の下部の周りに配置されたチャンネル層、前記第2電極の下に配置された伝導性支持部材、前記第1電極と前記伝導性支持部材に電気的に連結された第1連結部、前記第2電極に電気的に連結された第2連結部を含む。
【選択図】図1
Description
11 第1導電型半導体層
12 活性層
13 第2導電型半導体層
15 オーミック接触層
17 反射層
30 チャンネル層
35 第1金属層
40 絶縁層
45 保護膜
50 第2金属層
60 ボンディング層
70 伝導性支持部材
80 第1電極
85 ラフネス
87 第2電極
90 第1連結部
95 第2連結部
Claims (21)
- 第1導電型半導体層、前記第1導電型半導体層の下にある活性層、前記活性層の下にある第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層に電気的に連結された第1電極と、
前記第2導電型半導体層に電気的に連結された第2電極と、
前記発光構造物の下部の周りに配置されたチャンネル層と、
前記第2電極の下に配置された伝導性支持部材と、
前記第1電極及び前記伝導性支持部材に電気的に連結された第1連結部と、
前記第2電極に電気的に連結された第2連結部と、
を含むことを特徴とする、発光素子。 - 前記第2連結部の一端は前記チャンネル層の上に配置されたことを特徴とする、請求項1に記載の発光素子。
- 前記第2連結部の一端は前記発光構造物の側壁と離隔して配置され、前記発光構造物の側面に露出したことを特徴とする、請求項1または2に記載の発光素子。
- 前記第1連結部は前記チャンネル層を貫通して前記伝導性支持部材に電気的に連結されたことを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の上部面は前記活性層の上部面に比べてより高く配置されたことを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記第1連結部は前記第1導電型半導体層の側面に接触したことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記第1連結部と前記発光構造物との間に配置された保護膜を含むことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は前記活性層の周りを囲むように配置されたことを特徴とする、請求項1乃至7のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は前記第2導電型半導体層の周りを囲むように配置されたことを特徴とする、請求項1乃至8のうち、いずれか1項に記載の発光素子。
- 前記発光構造物の一側面は前記伝導性支持部材の一側面から20マイクロメートル以内に整列して配置されたことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。
- 前記発光構造物の一側面と前記伝導性支持部材の一側面は同一垂直面に整列して配置されたことを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 前記第2電極は前記第2導電型半導体層の下に配置された金属層を含み、前記第2連結部は前記金属層に電気的に連結されたことを特徴とする、請求項1乃至11のうち、いずれか1項に記載の発光素子。
- 前記金属層と前記伝導性支持部材との間に配置された絶縁層を含むことを特徴とする、請求項12に記載の発光素子。
- 前記絶縁層の上部面は前記発光構造物の下部の周りに露出したことを特徴とする、請求項13に記載の発光素子。
- 前記第1連結部は前記絶縁層を貫通して前記伝導性支持部材に電気的に連結されたことを特徴とする、請求項13または14に記載の発光素子。
- 前記絶縁層は前記チャンネル層の周りを囲むように配置されたことを特徴とする、請求項13乃至15のうち、いずれか1項に記載の発光素子。
- 前記第2電極の下に配置された拡散障壁層、ボンディング層を含むことを特徴とする、請求項1乃至16のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は酸化物または窒化物を含むことを特徴とする、請求項1乃至17のうち、いずれか1項に記載の発光素子。
- 前記絶縁層は前記金属層の周りを囲むように配置されたことを特徴とする、請求項13乃至16のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は前記第1連結部と前記第2導電型半導体層とを絶縁させることを特徴とする、請求項1乃至19のうち、いずれか1項に記載の発光素子。
- 前記第2連結部は前記第2電極に接触して配置されたことを特徴とする、請求項1乃至20のうち、いずれか1項に記載の発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0090679 | 2012-08-20 | ||
KR1020120090679A KR101946919B1 (ko) | 2012-08-20 | 2012-08-20 | 발광소자 |
KR10-2012-0096911 | 2012-09-03 | ||
KR1020120096911A KR101956096B1 (ko) | 2012-09-03 | 2012-09-03 | 발광소자 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014039039A true JP2014039039A (ja) | 2014-02-27 |
JP2014039039A5 JP2014039039A5 (ja) | 2016-10-06 |
JP6239311B2 JP6239311B2 (ja) | 2017-11-29 |
Family
ID=48998517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013169421A Active JP6239311B2 (ja) | 2012-08-20 | 2013-08-19 | 発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9653667B2 (ja) |
EP (1) | EP2701212B1 (ja) |
JP (1) | JP6239311B2 (ja) |
CN (1) | CN103633233B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014072419A (ja) * | 2012-09-28 | 2014-04-21 | Ushio Inc | Led素子及びその製造方法 |
JPWO2017154975A1 (ja) * | 2016-03-08 | 2019-01-24 | アルパッド株式会社 | 半導体発光装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101956101B1 (ko) * | 2012-09-06 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
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US20140048839A1 (en) | 2014-02-20 |
EP2701212B1 (en) | 2020-06-17 |
CN103633233B (zh) | 2017-12-05 |
EP2701212A2 (en) | 2014-02-26 |
EP2701212A3 (en) | 2016-04-27 |
JP6239311B2 (ja) | 2017-11-29 |
CN103633233A (zh) | 2014-03-12 |
US9653667B2 (en) | 2017-05-16 |
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