CN103579370A - 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置及其制备方法 - Google Patents
一种具有化学配比失配绝缘材料的电荷补偿半导体结装置及其制备方法 Download PDFInfo
- Publication number
- CN103579370A CN103579370A CN201210258327.XA CN201210258327A CN103579370A CN 103579370 A CN103579370 A CN 103579370A CN 201210258327 A CN201210258327 A CN 201210258327A CN 103579370 A CN103579370 A CN 103579370A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- insulating material
- junction
- mismatching
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 239000011810 insulating material Substances 0.000 title claims abstract description 46
- 239000000126 substance Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了一种具有化学配比失配绝缘材料的电荷补偿半导体结装置,本发明的半导体装置接一定的反向偏压时,漂移层中第一传导类型的半导体材料和第二传导类型的半导体材料形成电荷补偿结构,同时化学配比失配绝缘材料本身与漂移层半导体材料也产生电荷补偿,提高器件的反向击穿电压,从而改善了传统半导体器件导通电阻与反向阻断特性之间的矛盾;本发明还提供了一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的制备方法。
Description
技术领域
本发明涉及到一种具有化学配比失配绝缘材料的电荷补偿半导体结装置,本发明还涉及一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的制备方法。本发明的半导体装置是制造半导体功率器件的基本结构。
背景技术
功率半导体器件被大量使用在电源管理和电源应用上,功率半导体器件中最基本的结构为半导体结,半导体结包括了PN结和肖特基势垒结;降低高压功率半导体结的导通电阻是功率半导体器件发展的重要趋势。
传统的高压半导体器件,其导通电阻随器件反向阻断电压的升高成指数快速上升,使得器件具有较高的正向导通压降,为了解决此问题,人们提出过超结、界面电荷补偿等结构实现降低高压半导体器件的导通电阻。
发明内容
本发明主要针对高压半导体器件导通电阻随反向阻断电压快速升高的问题而提出,提供一种具有化学配比失配绝缘材料的电荷补偿半导体结装置及其制备方法。
一种具有化学配比失配绝缘材料的电荷补偿半导体结装置,其特征在于:包括:衬底层,为半导体材料;漂移层,为第一传导类型的半导体材料、第二传导类型的半导体材料和化学配比失配绝缘材料交替排列构成,位于衬底层之上;半导体结材料层,为半导体材料或金属,位于漂移层表面,形成PN结或肖特基势垒结。
一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的制备方法,其特征在于:包括如下步骤:在衬底层表面形成第一导电半导体材料层,然后表面形成一种绝缘材料;进行光刻腐蚀工艺去除表面部分绝缘材料,然后刻蚀去除部分裸露半导体材料形成沟槽;在沟槽内形成依次形成第二导电半导体材料和化学配比失配绝缘材料,然后进行反刻蚀;腐蚀去除表面绝缘材料,淀积势垒金属烧结形成肖特基势垒结,或者注入第二导电类型杂质退火形成PN结。
本发明的半导体装置接一定的反向偏压时,漂移层中第一传导类型的半导体材料和第二传导类型的半导体材料形成电荷补偿结构,同时化学配比失配绝缘材料本身与漂移层半导体材料也产生电荷补偿,提高器件的反向击穿电压,从而改善了传统半导体器件导通电阻与反向阻断特性之间的矛盾;本发明的半导体装置与传统超结器件相比,降低了器件对第一传导类型的半导体材料和第二传导类型的半导体材料中的电荷平衡的要求,降低了器件的制造难度;本发明的半导体装置与界面电荷补偿器件相比,提高了器件的可靠性。
附图说明
图1为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置剖面示意图;
图2为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置剖面示意图;
图3为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置剖面示意图;
图4为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置剖面示意图;
图5为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结MOS装置剖面示意图;
图6为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结MOS装置剖面示意图。
其中,
1、衬底层;
2、第二导电半导体材料;
3、第一导电半导体材料;
4、掺氧多晶硅;
5、多晶半导体材料;
6、肖特基势垒结;
7、漂移层;
8、体区;
9、源区;
10、二氧化硅。
具体实施方式
实施例1
图1为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的剖面图,下面结合图1详细说明本发明的半导体装置。
一种具有化学配比失配绝缘材料的电荷补偿半导体结装置,包括:衬底层1,为N导电类型半导体硅材料,磷原子的掺杂浓度为1E19/cm3;第二导电半导体材料2,位于衬底层1之上,为P传导类型的半导体硅材料,磷原子的掺杂浓度为1E16/cm3;第一导电半导体材料3,位于衬底层1之上,为N传导类型的半导体硅材料,磷原子的掺杂浓度为1E16/cm3;掺氧多晶硅4,为硅和氧的化合物,位于第二导电半导体材料2中;肖特基势垒结6,位于半导体材料的表面。
其制作工艺包括如下步骤:
第一步,在衬底层1表面外延生长形成第一导电半导体材料层3,然后表面热氧化,形成二氧化硅;
第二步,进行光刻腐蚀工艺,半导体材料表面去除部分二氧化硅,然后刻蚀去除部分裸露半导体硅材料形成沟槽;
第三步,在沟槽内依次淀积形成第二导电半导体材料2和掺氧多晶硅4,反刻蚀第二导电半导体材料2和掺氧多晶硅4;
第四步,腐蚀表面二氧化硅,淀积势垒金属镍,烧结形成肖特基势垒结6,如图1所示。
图2为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的剖面图,是在图1基础上,在掺氧多晶硅4上表面引入二氧化硅2,作为掺氧多晶硅4与器件表面电极金属的隔离。
图3为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的剖面图,是在图1基础上,将掺氧多晶硅4设置在沟槽内壁表面,在沟槽内引入二氧化硅10,作为掺氧多晶硅4与器件表面电极金属的隔离。
图4为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的剖面图,是在图3基础上,在沟槽上部引入MOS结构。
实施例2
图5示出了本发明一种具有化学配比失配绝缘材料的电荷补偿半导体结MOS装置剖的示意性剖面图,下面结合图5详细说明通过本发明的半导体装置制造功率MOSFET器件。
一种具有化学配比失配绝缘材料的电荷补偿半导体结MOS装置,包括:衬底层1,为N导电类型半导体硅材料,磷原子掺杂浓度为1E19cm-3;漂移层7,位于衬底层1之上,为N传导类型的半导体硅材料,磷原子掺杂浓度为1E16cm-3,厚度为38um,漂移层7中具有条状的P导电类型半导体硅材料,硼原子掺杂浓度为7E15cm-3;体区8,位于漂移层7之上,为P传导类型的半导体材料,体区8的表面具有硼原子重掺杂接触区,体区8厚度为4um;源区9,临靠沟槽和体区8,为磷原子重掺杂N传导类型的半导体材料,源区9厚度为1.5um;二氧化硅2,为硅材料的氧化物,位于沟槽侧壁;掺氧多晶硅4,为硅和氧的化合物,位于沟槽下部;多晶半导体材料5,位于沟槽上部为器件引入栅极。
本实施例的工艺制造流程如下:
第一步,在衬底层1上通过外延生产形成硼原子掺杂浓度为7E15cm-3P导电类型半导体硅材料;
第二步,在表面热氧化形成氧化层,在待形成沟槽区域表面去除氧化层;
第三步,进行干法刻蚀,去除半导体材料,形成沟槽;
第四步,进行磷扩散,形成漂移层7结构;
第五步,在沟槽内淀积形成掺氧多晶硅4;
第六步,干法刻蚀,去除部分掺氧多晶硅4,形成沟槽,在沟槽内进行硼扩散,热氧化形成二氧化硅10,在沟槽内淀积形成多晶半导体材料5,进行多晶半导体材料5反刻蚀;
第七步,然后去除器件表面部分氧化层,进行磷扩散,形成源区9;
第八步,在器件表面形成钝化层,然后去除器件表面部分钝化层,如图5所示。
然后在此基础上,淀积金属铝,然后反刻铝,为器件引出源极和栅极。通过背面金属化工艺为器件引出漏极。
图6为本发明的一种具有化学配比失配绝缘材料的电荷补偿半导体结MOS装置剖面示意图,是在图5基础上,将掺氧多晶硅4设置在内壁表面,然后设置二氧化硅2填充沟槽。
通过上述实例阐述了本发明,同时也可以采用其它实例实现本发明,本发明不局限于上述具体实例,因此本发明由所附权利要求范围限定。
Claims (10)
1.一种具有化学配比失配绝缘材料的电荷补偿半导体结装置,其特征在于:包括:
衬底层,为半导体材料;
漂移层,为第一传导类型的半导体材料、第二传导类型的半导体材料和化学配比失配绝缘材料交替排列构成,位于衬底层之上;
半导体结材料层,为半导体材料或金属,位于漂移层表面,形成PN结或肖特基势垒结。
2.如权利要求1所述的半导体装置,其特征在于:所述的衬底层可以为高浓度杂质掺杂的半导体材料层和低浓度杂质掺杂的半导体材料层的叠加层。
3.如权利要求1所述的半导体装置,其特征在于:所述的化学配比失配绝缘材料,为化合物绝缘材料,其化合物元素配比为非饱和状态,即不能满足绝缘材料中原子最外层电子数量为8个。
4.如权利要求3所述的半导体装置,其特征在于:所述的化合物绝缘材料可以为氧化物或氮化物。
5.如权利要求1所述的半导体装置,其特征在于:所述的化学配比失配绝缘材料可以位于第一传导类型的半导体材料和第一传导类型的半导体材料之间。
6.如权利要求1所述的半导体装置,其特征在于:所述的化学配比失配绝缘材料可以位于第一传导类型的半导体材料中。
7.如权利要求1所述的半导体装置,其特征在于:所述的化学配比失配绝缘材料可以位于第二传导类型的半导体材料中。
8.如权利要求1所述的半导体装置,其特征在于:所述的化学配比失配绝缘材料可以不与半导体结材料层相连,浮空在漂移层中。
9.如权利要求1所述的半导体装置,其特征在于:所述的半导体结装置可以应用于平面结构的半导体器件。
10.如权利要求1所述的一种具有化学配比失配绝缘材料的电荷补偿半导体结装置的制备方法,其特征在于:包括如下步骤:
1)在衬底层表面形成第一导电半导体材料层,然后表面形成一种绝缘材料;
2)进行光刻腐蚀工艺去除表面部分绝缘材料,然后刻蚀去除部分裸露半导体材料形成沟槽;
3)在沟槽内形成依次形成第二导电半导体材料和化学配比失配绝缘材料,然后进行反刻蚀;
4)腐蚀去除表面绝缘材料,淀积势垒金属烧结形成肖特基势垒结,或者注入第二导电类型杂质退火形成PN结。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210258327.XA CN103579370B (zh) | 2012-07-24 | 2012-07-24 | 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210258327.XA CN103579370B (zh) | 2012-07-24 | 2012-07-24 | 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103579370A true CN103579370A (zh) | 2014-02-12 |
CN103579370B CN103579370B (zh) | 2017-10-20 |
Family
ID=50050733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210258327.XA Active CN103579370B (zh) | 2012-07-24 | 2012-07-24 | 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103579370B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103594494A (zh) * | 2012-08-16 | 2014-02-19 | 朱江 | 一种电荷补偿肖特基半导体装置及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010048131A1 (en) * | 2000-02-12 | 2001-12-06 | U.S. Philips Corporation | Semiconductor device |
US20070052058A1 (en) * | 2004-02-13 | 2007-03-08 | Franz Hirler | High blocking semiconductor component comprising a drift section |
CN101180739A (zh) * | 2005-05-24 | 2008-05-14 | Nxp股份有限公司 | 用于半导体器件的边缘末端 |
CN101241933A (zh) * | 2007-02-06 | 2008-08-13 | 半导体元件工业有限责任公司 | 具有沟槽边缘终端结构的半导体器件 |
CN101510557A (zh) * | 2008-01-11 | 2009-08-19 | 艾斯莫斯技术有限公司 | 具有电介质终止的超结半导体器件及制造该器件的方法 |
CN102347220A (zh) * | 2010-07-22 | 2012-02-08 | 飞兆半导体公司 | 具有薄epi工艺的沟槽超结mosfet器件及其制造方法 |
-
2012
- 2012-07-24 CN CN201210258327.XA patent/CN103579370B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010048131A1 (en) * | 2000-02-12 | 2001-12-06 | U.S. Philips Corporation | Semiconductor device |
US20070052058A1 (en) * | 2004-02-13 | 2007-03-08 | Franz Hirler | High blocking semiconductor component comprising a drift section |
CN101180739A (zh) * | 2005-05-24 | 2008-05-14 | Nxp股份有限公司 | 用于半导体器件的边缘末端 |
CN101241933A (zh) * | 2007-02-06 | 2008-08-13 | 半导体元件工业有限责任公司 | 具有沟槽边缘终端结构的半导体器件 |
CN101510557A (zh) * | 2008-01-11 | 2009-08-19 | 艾斯莫斯技术有限公司 | 具有电介质终止的超结半导体器件及制造该器件的方法 |
CN102347220A (zh) * | 2010-07-22 | 2012-02-08 | 飞兆半导体公司 | 具有薄epi工艺的沟槽超结mosfet器件及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103594494A (zh) * | 2012-08-16 | 2014-02-19 | 朱江 | 一种电荷补偿肖特基半导体装置及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103579370B (zh) | 2017-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5565461B2 (ja) | 半導体装置 | |
CN103199119B (zh) | 一种具有超结结构的沟槽肖特基半导体装置及其制备方法 | |
CN103545381B (zh) | 一种水平结构沟槽肖特基半导体装置及其制备方法 | |
CN110931548A (zh) | 一种半导体器件结构及其制造方法 | |
CN103367396B (zh) | 一种超级结肖特基半导体装置及其制备方法 | |
CN103579370B (zh) | 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置 | |
CN103378178B (zh) | 一种具有沟槽结构肖特基半导体装置及其制备方法 | |
CN103489895B (zh) | 一种沟槽超结半导体装置 | |
CN103378172B (zh) | 一种肖特基半导体装置及其制备方法 | |
CN103378170A (zh) | 一种具有超级结肖特基半导体装置及其制备方法 | |
CN103137711A (zh) | 一种具有绝缘层隔离结构肖特基半导体装置及其制备方法 | |
CN103378177B (zh) | 一种具有沟槽肖特基半导体装置及其制备方法 | |
CN103579371A (zh) | 一种沟槽终端结构肖特基器件及其制备方法 | |
CN103199102A (zh) | 一种具有超结结构的肖特基半导体装置及其制备方法 | |
CN103515449B (zh) | 一种具有电荷补偿沟槽肖特基半导体装置及其制备方法 | |
CN103367434B (zh) | 一种超级结沟槽mos半导体装置 | |
CN103367433B (zh) | 一种沟槽超级结mos半导体装置及其制造方法 | |
CN103943667A (zh) | 一种化学配比失配绝缘材料电荷补偿的半导体结装置及其制备方法 | |
CN103367437B (zh) | 一种沟槽mos半导体装置及其制造方法 | |
CN103383953A (zh) | 一种无源超结沟槽mos半导体装置及其制造方法 | |
CN103367436B (zh) | 一种沟槽肖特基mos半导体装置及其制造方法 | |
CN103531628B (zh) | 一种沟槽肖特基mos半导体装置 | |
CN103390635B (zh) | 一种具有无源金属pn结半导体装置及其制备方法 | |
CN103378176B (zh) | 一种具有电荷补偿肖特基半导体装置及其制造方法 | |
CN103378131A (zh) | 一种电荷补偿肖特基半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210106 Address after: No.1 Taiji Road, Bei'an sub district office, Jimo District, Qingdao City, Shandong Province Patentee after: Qingdao Huike Microelectronics Co.,Ltd. Address before: 113200 disabled people's Federation of Xinbin Manchu Autonomous County, Fushun City, Liaoning Province Patentee before: Zhu Jiang |
|
TR01 | Transfer of patent right |