CN103579079A - 抑制浅沟槽隔离工艺中双峰效应的方法 - Google Patents
抑制浅沟槽隔离工艺中双峰效应的方法 Download PDFInfo
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- CN103579079A CN103579079A CN201210271232.1A CN201210271232A CN103579079A CN 103579079 A CN103579079 A CN 103579079A CN 201210271232 A CN201210271232 A CN 201210271232A CN 103579079 A CN103579079 A CN 103579079A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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CN201210271232.1A CN103579079B (zh) | 2012-07-31 | 2012-07-31 | 抑制浅沟槽隔离工艺中双峰效应的方法 |
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CN201210271232.1A CN103579079B (zh) | 2012-07-31 | 2012-07-31 | 抑制浅沟槽隔离工艺中双峰效应的方法 |
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CN103579079A true CN103579079A (zh) | 2014-02-12 |
CN103579079B CN103579079B (zh) | 2016-10-19 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105990115A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 一种半导体器件及其制造方法、电子装置 |
CN106505107A (zh) * | 2016-11-03 | 2017-03-15 | 中航(重庆)微电子有限公司 | 一种半导体结构及改善nmos双峰效应的方法 |
Citations (7)
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US5776813A (en) * | 1997-10-06 | 1998-07-07 | Industrial Technology Research Institute | Process to manufacture a vertical gate-enhanced bipolar transistor |
CN101154681A (zh) * | 2006-09-27 | 2008-04-02 | 上海华虹Nec电子有限公司 | 采用非均匀栅氧化层的高压晶体管及其制造方法 |
CN101673763A (zh) * | 2008-09-09 | 2010-03-17 | 上海华虹Nec电子有限公司 | Ldmos晶体管及其制备方法 |
CN101783295A (zh) * | 2009-01-19 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | 一种高压ldmos器件及其制造方法 |
CN102110636A (zh) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | 改善反窄沟道效应及制作mos晶体管的方法 |
CN102412126A (zh) * | 2011-11-04 | 2012-04-11 | 上海华虹Nec电子有限公司 | 超高压ldmos的工艺制作方法 |
CN102543727A (zh) * | 2010-12-20 | 2012-07-04 | 上海华虹Nec电子有限公司 | 锗硅hbt结构、其赝埋层结构及其制造方法 |
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2012
- 2012-07-31 CN CN201210271232.1A patent/CN103579079B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5776813A (en) * | 1997-10-06 | 1998-07-07 | Industrial Technology Research Institute | Process to manufacture a vertical gate-enhanced bipolar transistor |
CN101154681A (zh) * | 2006-09-27 | 2008-04-02 | 上海华虹Nec电子有限公司 | 采用非均匀栅氧化层的高压晶体管及其制造方法 |
CN101673763A (zh) * | 2008-09-09 | 2010-03-17 | 上海华虹Nec电子有限公司 | Ldmos晶体管及其制备方法 |
CN101783295A (zh) * | 2009-01-19 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | 一种高压ldmos器件及其制造方法 |
CN102110636A (zh) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | 改善反窄沟道效应及制作mos晶体管的方法 |
CN102543727A (zh) * | 2010-12-20 | 2012-07-04 | 上海华虹Nec电子有限公司 | 锗硅hbt结构、其赝埋层结构及其制造方法 |
CN102412126A (zh) * | 2011-11-04 | 2012-04-11 | 上海华虹Nec电子有限公司 | 超高压ldmos的工艺制作方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105990115A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 一种半导体器件及其制造方法、电子装置 |
CN106505107A (zh) * | 2016-11-03 | 2017-03-15 | 中航(重庆)微电子有限公司 | 一种半导体结构及改善nmos双峰效应的方法 |
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CN103579079B (zh) | 2016-10-19 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
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