CN103579073A - 深沟槽填充方法 - Google Patents
深沟槽填充方法 Download PDFInfo
- Publication number
- CN103579073A CN103579073A CN201210251945.1A CN201210251945A CN103579073A CN 103579073 A CN103579073 A CN 103579073A CN 201210251945 A CN201210251945 A CN 201210251945A CN 103579073 A CN103579073 A CN 103579073A
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- CN
- China
- Prior art keywords
- deep trench
- photoresist
- trench
- substrate
- filling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000011049 filling Methods 0.000 title claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000010992 reflux Methods 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000009545 invasion Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000015847 Hesperis matronalis Nutrition 0.000 description 1
- 240000004533 Hesperis matronalis Species 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210251945.1A CN103579073B (zh) | 2012-07-20 | 2012-07-20 | 深沟槽填充方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210251945.1A CN103579073B (zh) | 2012-07-20 | 2012-07-20 | 深沟槽填充方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103579073A true CN103579073A (zh) | 2014-02-12 |
CN103579073B CN103579073B (zh) | 2016-06-08 |
Family
ID=50050563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210251945.1A Active CN103579073B (zh) | 2012-07-20 | 2012-07-20 | 深沟槽填充方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103579073B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465338A (zh) * | 2014-12-26 | 2015-03-25 | 力特半导体(无锡)有限公司 | 深沟槽多层光刻覆盖结构及其光刻覆盖方法 |
CN105097499A (zh) * | 2014-05-09 | 2015-11-25 | 盛美半导体设备(上海)有限公司 | 涂胶方法及涂胶装置 |
CN105984833A (zh) * | 2015-02-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
CN106057639A (zh) * | 2015-04-08 | 2016-10-26 | 苏斯微技术光刻有限公司 | 用于涂覆基板的方法 |
CN113299735A (zh) * | 2021-05-12 | 2021-08-24 | 浙江大学 | 一种带有斜坡的半导体器件终端结构及其制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020050468A (ko) * | 2000-12-21 | 2002-06-27 | 박종섭 | 반도체 소자의 격리영역 형성방법 |
US20060110941A1 (en) * | 2004-11-22 | 2006-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving via filling uniformity in isolated and dense via-pattern regions |
-
2012
- 2012-07-20 CN CN201210251945.1A patent/CN103579073B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020050468A (ko) * | 2000-12-21 | 2002-06-27 | 박종섭 | 반도체 소자의 격리영역 형성방법 |
US20060110941A1 (en) * | 2004-11-22 | 2006-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving via filling uniformity in isolated and dense via-pattern regions |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097499A (zh) * | 2014-05-09 | 2015-11-25 | 盛美半导体设备(上海)有限公司 | 涂胶方法及涂胶装置 |
CN105097499B (zh) * | 2014-05-09 | 2019-05-17 | 盛美半导体设备(上海)有限公司 | 涂胶方法及涂胶装置 |
CN104465338A (zh) * | 2014-12-26 | 2015-03-25 | 力特半导体(无锡)有限公司 | 深沟槽多层光刻覆盖结构及其光刻覆盖方法 |
CN104465338B (zh) * | 2014-12-26 | 2017-02-22 | 力特半导体(无锡)有限公司 | 深沟槽多层光刻覆盖结构及其光刻覆盖方法 |
CN105984833A (zh) * | 2015-02-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
CN105984833B (zh) * | 2015-02-04 | 2017-12-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
CN106057639A (zh) * | 2015-04-08 | 2016-10-26 | 苏斯微技术光刻有限公司 | 用于涂覆基板的方法 |
CN113299735A (zh) * | 2021-05-12 | 2021-08-24 | 浙江大学 | 一种带有斜坡的半导体器件终端结构及其制造方法 |
CN113299735B (zh) * | 2021-05-12 | 2022-08-05 | 浙江大学 | 一种带有斜坡的半导体器件终端结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103579073B (zh) | 2016-06-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |