CN103515236A - 一种在柔性衬底上的薄膜晶体管的制备方法 - Google Patents
一种在柔性衬底上的薄膜晶体管的制备方法 Download PDFInfo
- Publication number
- CN103515236A CN103515236A CN201210213660.9A CN201210213660A CN103515236A CN 103515236 A CN103515236 A CN 103515236A CN 201210213660 A CN201210213660 A CN 201210213660A CN 103515236 A CN103515236 A CN 103515236A
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- China
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- preparation
- zinc oxide
- dielectric layer
- film transistor
- conductive film
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 title abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000002360 preparation method Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000011787 zinc oxide Substances 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 19
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229920002457 flexible plastic Polymers 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004500 asepsis Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210213660.9A CN103515236A (zh) | 2012-06-25 | 2012-06-25 | 一种在柔性衬底上的薄膜晶体管的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210213660.9A CN103515236A (zh) | 2012-06-25 | 2012-06-25 | 一种在柔性衬底上的薄膜晶体管的制备方法 |
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Publication Number | Publication Date |
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CN103515236A true CN103515236A (zh) | 2014-01-15 |
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CN201210213660.9A Pending CN103515236A (zh) | 2012-06-25 | 2012-06-25 | 一种在柔性衬底上的薄膜晶体管的制备方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017045135A1 (en) * | 2015-09-15 | 2017-03-23 | Boe Technology Group Co., Ltd. | Thin film transistor array substrate and fabrication method thereof, and display device |
WO2017121215A1 (en) * | 2016-01-14 | 2017-07-20 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. | Method for fabricating conducting structure and thin film transistor array panel |
CN110767547A (zh) * | 2018-07-25 | 2020-02-07 | 济南嘉源电子有限公司 | 一种低成本制备双电层薄膜晶体管的工艺 |
CN112447855A (zh) * | 2019-09-03 | 2021-03-05 | 北京大学 | 一种薄膜晶体管的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764064A (zh) * | 2008-12-24 | 2010-06-30 | 索尼株式会社 | 制造薄膜晶体管的方法、薄膜晶体管和显示单元 |
US20100267197A1 (en) * | 2009-04-21 | 2010-10-21 | Chan-Long Shieh | Double self-aligned metal oxide tft |
CN102394223A (zh) * | 2011-12-08 | 2012-03-28 | 北京大学 | 一种塑料衬底上制备薄膜晶体管的制备方法 |
CN102468338A (zh) * | 2010-11-17 | 2012-05-23 | 北京大学 | 一种氧化锌基肖特基薄膜晶体管 |
CN102496630A (zh) * | 2011-11-25 | 2012-06-13 | 中山大学 | 顶电极结构的ZnO基全透明非挥发存储器及制备方法 |
-
2012
- 2012-06-25 CN CN201210213660.9A patent/CN103515236A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764064A (zh) * | 2008-12-24 | 2010-06-30 | 索尼株式会社 | 制造薄膜晶体管的方法、薄膜晶体管和显示单元 |
US20100267197A1 (en) * | 2009-04-21 | 2010-10-21 | Chan-Long Shieh | Double self-aligned metal oxide tft |
CN102468338A (zh) * | 2010-11-17 | 2012-05-23 | 北京大学 | 一种氧化锌基肖特基薄膜晶体管 |
CN102496630A (zh) * | 2011-11-25 | 2012-06-13 | 中山大学 | 顶电极结构的ZnO基全透明非挥发存储器及制备方法 |
CN102394223A (zh) * | 2011-12-08 | 2012-03-28 | 北京大学 | 一种塑料衬底上制备薄膜晶体管的制备方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017045135A1 (en) * | 2015-09-15 | 2017-03-23 | Boe Technology Group Co., Ltd. | Thin film transistor array substrate and fabrication method thereof, and display device |
US9991398B2 (en) | 2015-09-15 | 2018-06-05 | Boe Technology Group Co., Ltd. | Thin film transistor (TFT) array substrate and fabrication method thereof, and display device |
WO2017121215A1 (en) * | 2016-01-14 | 2017-07-20 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. | Method for fabricating conducting structure and thin film transistor array panel |
CN110767547A (zh) * | 2018-07-25 | 2020-02-07 | 济南嘉源电子有限公司 | 一种低成本制备双电层薄膜晶体管的工艺 |
CN110767547B (zh) * | 2018-07-25 | 2024-02-23 | 济南嘉源电子有限公司 | 一种低成本制备双电层薄膜晶体管的工艺 |
CN112447855A (zh) * | 2019-09-03 | 2021-03-05 | 北京大学 | 一种薄膜晶体管的制备方法 |
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