CN103489772B - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
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- CN103489772B CN103489772B CN201310218369.5A CN201310218369A CN103489772B CN 103489772 B CN103489772 B CN 103489772B CN 201310218369 A CN201310218369 A CN 201310218369A CN 103489772 B CN103489772 B CN 103489772B
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- 238000003672 processing method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 102
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims abstract description 57
- 239000002346 layers by function Substances 0.000 claims abstract description 40
- 230000011218 segmentation Effects 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims description 23
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 78
- 230000014759 maintenance of location Effects 0.000 description 19
- 238000003384 imaging method Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Engineering & Computer Science (AREA)
- Dicing (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Laser Beam Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012130050A JP5992731B2 (ja) | 2012-06-07 | 2012-06-07 | ウエーハの加工方法 |
| JP2012-130050 | 2012-06-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103489772A CN103489772A (zh) | 2014-01-01 |
| CN103489772B true CN103489772B (zh) | 2017-07-14 |
Family
ID=49829915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310218369.5A Active CN103489772B (zh) | 2012-06-07 | 2013-06-04 | 晶片的加工方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5992731B2 (ja) |
| KR (1) | KR20130137534A (ja) |
| CN (1) | CN103489772B (ja) |
| TW (1) | TWI591703B (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6151557B2 (ja) * | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
| JP6230422B2 (ja) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6257365B2 (ja) * | 2014-02-07 | 2018-01-10 | 株式会社ディスコ | ウェーハの加工方法 |
| JP6270520B2 (ja) * | 2014-02-07 | 2018-01-31 | 株式会社ディスコ | ウェーハの加工方法 |
| JP6558973B2 (ja) * | 2015-06-18 | 2019-08-14 | 株式会社ディスコ | デバイスチップの製造方法 |
| JP2017011119A (ja) | 2015-06-23 | 2017-01-12 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6600254B2 (ja) * | 2015-12-28 | 2019-10-30 | 株式会社ディスコ | ウェーハの加工方法 |
| JP6824577B2 (ja) * | 2016-11-29 | 2021-02-03 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7020675B2 (ja) | 2018-02-26 | 2022-02-16 | 三星ダイヤモンド工業株式会社 | Ｌｏｗ－ｋ膜付きウエハの分断方法 |
| JP2022114652A (ja) | 2021-01-27 | 2022-08-08 | 株式会社ディスコ | チップの製造方法 |
| JP2022137807A (ja) | 2021-03-09 | 2022-09-22 | 株式会社ディスコ | ウェーハの製造方法、チップの製造方法、ウェーハ及びレーザービームの位置合わせ方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003100666A (ja) * | 2001-09-26 | 2003-04-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP4471632B2 (ja) * | 2003-11-18 | 2010-06-02 | 株式会社ディスコ | ウエーハの加工方法 |
| JP4054773B2 (ja) * | 2004-02-27 | 2008-03-05 | キヤノン株式会社 | シリコン基板割断方法 |
| JP4377300B2 (ja) * | 2004-06-22 | 2009-12-02 | Ｎｅｃエレクトロニクス株式会社 | 半導体ウエハおよび半導体装置の製造方法 |
| JP2007173475A (ja) * | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| JP2008277414A (ja) * | 2007-04-26 | 2008-11-13 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| JP2008311404A (ja) * | 2007-06-14 | 2008-12-25 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| JP5495511B2 (ja) * | 2008-05-27 | 2014-05-21 | 株式会社ディスコ | ウエーハの分割方法 |
| JP2009290148A (ja) * | 2008-06-02 | 2009-12-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| JP2011187479A (ja) * | 2010-03-04 | 2011-09-22 | Disco Corp | ウエーハの加工方法 |
-
2012
- 2012-06-07 JP JP2012130050A patent/JP5992731B2/ja active Active
-
2013
- 2013-04-30 TW TW102115410A patent/TWI591703B/zh active
- 2013-05-29 KR KR1020130061203A patent/KR20130137534A/ko not_active Application Discontinuation
- 2013-06-04 CN CN201310218369.5A patent/CN103489772B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201401360A (zh) | 2014-01-01 |
| JP5992731B2 (ja) | 2016-09-14 |
| TWI591703B (zh) | 2017-07-11 |
| JP2013254867A (ja) | 2013-12-19 |
| CN103489772A (zh) | 2014-01-01 |
| KR20130137534A (ko) | 2013-12-17 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |